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SPECTROSCOPY OF SEMICONDUCTOR

PRESENTED BY: WAN NOOR EZIANTI BT WAN MOHD NORAL AZMAN

Outline:
Objectives.. What is spectroscopy of semiconductor..? Background Spectroscopic techniques. Instrumentation Application Outcome Conclusion Future outlook..

Objectives:
To understand the idea/theory of spectroscopy of semiconductor. To investigate the spectroscopic techniques. To understand the mechanism of spectroscopic techniques.

What is spectroscopy of semiconductor?


A branch of spectroscopy that specifically specializes in characterize semiconductor properties.

A field that responsible to develop or improve the spectroscopic techniques that will be used to probed semiconductors.

Background
The history of spectroscopy began in 17th century when Sir Isaac Newton discover the basic nature of light. The 1st Nobel Prize in spectroscopy: H.A.Lorentz and P.Zeeman in 1902. (discovering the splitting of spectral line in magnetic)

Since the discovering of transistor in 1947 and the refinement of crystal growth, spectroscopic techniques have been demonstrated to be among the most powerful and sensitive characterization methods for investigating semiconductors.

Spectroscopic techniques
Raman spectroscopy Ultrafast spectroscopy Photoluminescence spectroscopy Photoreflectance spectroscopy

Raman spectroscopy
Inelastic light scattering. Originates from a change in polarizability. Phonon Raman spectra:
analyze the symmetry, periodicity and atomic arrangement and structural properties of solids.

Resonance Raman Effect


when their bandgap energy is close to photon energies ranging from the UV to near IR region, Raman signal greatly enhanced.

Raman setup:

Evaluation of defects
Presence of defects causes:
distortion and broadening Raman bands appearance of new band breakdown of the polarization selection rule.

The increase of damage cause by ion implantation, converts a crystalline state into an amorphous state. Laser annealing is used to recover. Raman characterize the degree of damage in ion implantation.

As the implantation damage increase, the intensity of the Raman band decrease. Evaluated the amount of damage:
= =1-

By simultaneous measurement of damage and undamaged s/c , we obtain a precisely normalized intensity.

Ultrafast spectroscopy
Timescale is usually fs ps. Aim to study the carrier relaxation dynamics and transport dynamics. Essential part :ultrashort pulse laser.

Photon echoes
The experimental scheme for eliminating inhomogeneous broadening is often referred to as a photon echo experiment. The most usual way to measure the three-pulse photon echo signal is the three-pulse photon echo peak shift.

Figure 2 shows the typical appearance of the echo signals generated in a few selected phase matching directions while figure 3 shows the peak shift signal of Rhodamine 800 in ethanol.

Photoluminescence.
Contactless and non-destructive method. A process in a subtance absorbs photons (EM radiation) and then re-radiates photons. Used to determine the bandgap, find impurities and defects s/c.

Information about the structure and composition of doped s/c can be determine through the spectra.

Photoreflectance
contactless form of electric field modulation spectroscopy. From the figure, a HeNe pump laser pump an area and is absorbed by the material, creating electron -hole pairs that alter the dielectric function.

The laser beam is modulated by a chopper and hence the materials reflectance R. The monochromatic illumination beam is focus on the modulated area of the sample.
The detector recorded the reflected beam. The ratio of R/R is calculated a graph is plotted against the reflected light wavelength.

From figure, the sharp-like feature of the spectra relates to the interband transition of the material. By using the line shape fitting, accurate information about bandgap and broadening parameters can be measured.

Instrumentation
No. 1. Instrument Charged-coupled device Application A device for the movement of electrical charge, usually from within the device to an area where the charge can be manipulated.

2.

Spectrograph

An instrument for dispersing radiation into a spectrum and recording or mapping the spectrum.

No. 3.

Instrument Spectrometer

Application Instrument use to measure properties of light over a specific portion of electromagnetic spectrum.

4.

Monochromator

Manually tuned, presenting one wavelength or bandpass at a time from its exit slit.

5.

Lock-in Amplifier

A type of amplifier that can extract the signal with a known carrier wave.

Application
Surface photovoltage spectroscopy of semiconductor structures: at the crossroads of physics, chemistry and electrical engineering. Ultrafast laser-induced order-disorder transition in semiconductors.

Outcome
The continuous reduction of the feature size of semiconductor.
Transistor feature size scaled from 10 m ~ 30 nm during these past 40 years.

The discovery of the blue LED by Shuji Nakamura.

Chalcopyrites - based solar cells and have efficiency which is about 20%. One of their mysterious features is super high tolerance to any radiation. Their life-time in outer space was found to be at least 50 times as long as that of amorphous silicon solar cells.

Conclusion
Spectroscopy of semiconductor is a branch of spectroscopy that specialized in characterize semiconductor. It is a wide range of knowledge of application where various of spectroscopic techniques were developed or improved to make it able to characterize a properties of semiconductor. There are many other spectroscopic used to characterize semiconductor besides all that have been discussed and there are some that are still conducted in the laboratory.

Future outlook..
The development in ultrafast spectroscopy from femtosecond to attosecond to characterize semiconductor. To improve capability of techniques and further developments are expected to efficiently extend to the range of investigation to the nanoscale level. The development of nanoscience and nanotechnology in spectroscopy view.

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