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Module Leader :
ACTP VSD402T
Module Objectives
This module is concerned with the design and analysis of CMOS digital circuit design. Design techniques utilizing CMOS technology will be mainly focused. It is expected that the systematic coverage of CMOS IC design techniques in the module will enhance the following skills for the students. 1. Learn state of the art CMOS VLSI system and circuit design. 2. Provides the tools to design common CMOS digital Circuits on a silicon
chip, given a set of specifications. 3. Provides insight into the various trade-offs between noise, power, speed, area, etc., that go into the design. 4. Emphasizes on the current trends adopted in semiconductor industry for CMOS digital design.
ACTP VSD402T
Module Resources
Module Notes Reference Text books: 1. Sung Kang and Yusuf Leblebici, CMOS digital integrated circuits, third
2. 3. 4. 5.
edition, McGraw Hill, 2002. R. Jacob Baker, Harry W. Li, David E. Boyce, CMOS Circuit Design, Layout, and Simulation, John Wiley and Sons, 1997, ISBN:0-78033416-7 R. L. Geiger, P. E. Allen and N. R. Strader, "VLSI Design Techniques for Analog and Digital Circuits," McGraw-Hill Publishing Company, New York, 1990 J. Rabaey, Digital Integrated Circuits-A design perspective, 2nd edition, 2005, PHI Neil H. E. Weste and Kamran Eshraghian, Principles of CMOS VLSI Design -A Systems Perspective- (4th ed.), Addison Wesley, 2001
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Tools
Cadence Virtuoso Suite
ACTP VSD402T
Module Evaluation
Assignment 60% Quiz 10% Exam 30%
Session 1
Introduction to IC Design
Session Speaker N. Venu Gopal
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Session Objectives
To understand the concepts of
Transistor evolution and technology trends IC design methodologies Design styles
Full custom Standard cell Gate-array Macro-cell FPGA Combinations
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Introduction
1906 1947
First point contact transistor (germanium), 1947 John Bardeen and Walter Brattain Bell Laboratories
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Introduction
1958 1997
First integrated circuit (germanium), 1958 Jack S. Kilby, Texas Instruments Contained five components, three types: transistors resistors and capacitors Intel Pentium II, 1997 Clock: 233MHz Number of transistors: 7.5 M Gate Length: 0.35 9
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Transistor Revolution
Transistor Bardeen (Bell Labs) in 1947 Bipolar transistor Schockley in 1949 First bipolar digital logic gate Harris in 1956 First monolithic IC Jack Kilby in 1959 First commercial IC logic gates Fairchild 1960 TTL 1962 into the 1990s ECL 1974 into the 1980s
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MOSFET Technology
MOSFET transistor - Lilienfeld (Canada) in 1925 and Heil (England) in 1935 CMOS 1960s, but plagued with manufacturing problems (used in watches due to their power limitations) PMOS in 1960s (calculators) NMOS in 1970s (4004, 8080) for speed CMOS in 1980s preferred MOSFET technology because of power benefits BiCMOS, Gallium-Arsenide, Silicon-Germanium SOI, Copper-Low K, strained silicon,
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Moores Law
In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 months (i.e., grow exponentially with time). Amazingly visionary million transistor/chip barrier was crossed in the 1980s.
2300 transistors, 1 MHz clock (Intel 4004) - 1971 16 Million transistors (Ultra Sparc III) 42 Million, 2 GHz clock (Intel P4) - 2001 140 Million transistor (HP PA-8500)
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P6 Pentium proc
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10000000
16,000,000 4,000,000
0.07 Qm
0.1 Qm
K b i t c a p a c it y /c h ip
1000000
0.13 Qm
100000
book
16,000 4,000
256,000 64,000
0.18-0.25 Qm
0.35-0.4 Qm
10000
0.5-0.6 Qm
0.7-0.8 Qm
1,000
1.0-1.2 Qm 1.6-2.4 Qm
page
1983 1986 1989 1992 1995 1998 2001 2004 2007 2010
Year
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386
1990 Year
2000
2010
Courtesy, Intel
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Clock Frequency
Lead microprocessors frequency doubles every 2 years
10000 1000 Frequency (Mhz) 100 486 10 1 0.1 1970 8085 8086 286 8080 8008 4004 1980 1990 Year 2000 2010
Courtesy, Intel
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2X every 2 years
P6 Pentium proc 386
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Power Dissipation
Lead Microprocessors power continues to increase
100 P6 Pentium proc 10 8086 286 1 8085 8080 486 386
Power (Watts)
8008 4004
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Why Scaling?
Technology shrinks by ~0.7 per generation With every generation can integrate 2x more functions on a chip; chip cost does not increase significantly Cost of a function decreases by 2x But
How to design chips with more and more functions? Design engineering population does not double every two
years
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Complexity Frequency 3 Yr. Design Staff Size 13 M Tr. 20 M Tr. 32 M Tr. 130 M Tr. 400 MHz 500 MHz 600 MHz 800 MHz 210 270 360 800
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Technology Evolution
International Technology Roadmap for Semiconductors
2003 data
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Example of a cost effective product (typically DRAM): the initial IC area is reduced to 50% after 3 years and to 35% after 6 years.
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CMOS dominates because: Silicon is cheaper preferred over other materials physics of CMOS is easier to understand CMOS is easier to implement/fabricate CMOS provides lower power-delay product CMOS is lowest power can get more CMOS transistors/functions in same chip area BUT! CMOS is not the fastest technology! BJT and III-V devices are faster
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K
Transistors
90nm 0.13um 0.18um 0.25um 0.35um 0.5um 0.8um 1um 1.5um 2um 3um
Time-To-Market
120% 100% 80% $1000 $10000
Fabrication Cost
Profit
$100
$10 0% -20% $1
1960
1970
1980
1990
2000
2010
Source: www.icknowledge.com
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Challenges:
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Circuit Entities
NMOS transistor Metal interconnects
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Photoresist Develop
Dopant gas Ionized CF4 gas photoresist oxide Ionized oxygen gas oxide oxygen gate oxide Silane gas polysilicon
Oxide Etch
Scanning ion beam
Photoresist Strip
Polysilicon Deposition
Contact holes
G ox S D S
top nitride G D S G D S G D
Ion Implantation
Active Regions
Nitride Deposition
Contact Etch
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critical dimension
Year CD (nm)
98
00
02
04 90
07 65
10 45
13 32
16 22
19 16
How does scaling impact transistor and interconnect performance? How does scaling continuously present new challenges to physical design? And how does it make some techniques obsolete What is the fundamental limits to scaling (how far can we go)?
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leakage
gate delay global (no repeaters) local (scaled) global wires (repeaters)
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Successful Design
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Design Methodology
Specification Trade-offs Design domains - abstraction level Top-down - Bottom up Schematic based Synthesis based Getting it right Simulation and verification Lower power Design styles
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Specification
A specification of what to construct is the first major step. Compromise between what is wanted and what can be made
Requires extensive experience to define best compromise
A detailed specification must be agreed upon with the system people. Major changes during design may result in significant delays. Requirements must be considered at many levels
System, sub-system, Board, Hybrid, IC
Specifications can (must) be verified by system simulations. Specification is 1/4 - 1/3 of total IC project !.
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Trade offs
Partitioning Integration Tools Technology Availability Speed Time Schedule Reliability Man power Packaging
Production costs
Radiation hardness
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Design Domains
Gajski chart
Structural
Processor, memory ALU, registers Cell Device, gate Transistor
Behavioral
Program State machine Module Boolean equation Transfer function
Geometric
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Logic level
0 0 0 State 0
Circuit level
Layout level
Logic synthesis
Circuit synthesis
Layout synthesis
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Bottom - up
Build gates in given technology Build basic units using gates Build generic modules of use Put modules together Hope that you arrived at some reasonable architecture Gate level simulation tools Old fashioned design methodology a la discrete logic
The design was made in a typical top - down , bottom - up , inside - out design methodology
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Schematic based
Symbol of module defines interface Schematic of module defines function Top - down: Make first symbol and then schematic Bottom - up: Make first Schematic and then symbol
Basic gate Logic module
Symbol
Schematic
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Synthesis based
Define modules and their behavior in a proper language (also used for simulation) Use synthesis tools to generate schematics (netlists)
always @(posedge clk) begin if (set) coarse <= #(test.ff_delay) offset; else if (coarse == count_roll_over) coarse <= #(test.ff_delay) 0; else coarse <= #(test.ff_delay) coarse + 1; end
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Design styles
Full custom Standard cell Gate-array Macro-cell FPGA Combinations
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Full custom
Hand drawn geometry All layers customized Digital and analog Simulation at transistor level (analog) High density High performance Looong design time
Vdd
IN
Out
Gnd
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Standard cells
Standard cells organized in rows (and, or, flip-flops,etc.) Cells made as full custom by vendor (not user). All layers customized Digital with possibility of special analog cells. Simulation at gate level (digital) Medium- high density Medium-high performance Routing Reasonable design time
Cell
IO cell
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Gate-array
Predefined transistors connected via metal Two types: Channel based, Sea of gates Only metal layers customized Fixed array sizes (normally 5-10 different) Digital cells in library (and, or, flip-flops,etc.) Simulation at gate level (digital) Medium density Medium performance Reasonable design time
Sea of gates Channel based Oxide isolation
Gate isolation
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NMOS
Gnd
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Macro cell
Predefined macro blocks (Processors, RAM,etc) Macro blocks made as full custom by vendor ( Intellectual Property blocks = IP blocks) All layers customized Digital and some analog (ADC) Simulation at behavioral or gate level (digital) High density DSP processor High performance LCD RAM Short design time cont. Use standard on-chip busses ADC ROM System on a chip (SOC)
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Comparison
FPGA Density Flexibility Analog Performance Design time Design costs Tools Volume Low Low (high) No Low Low Low Simple Low
Full custom High High Yes Very high High High Very complex High
Macro cell High Medium Yes Very high Medium High Complex High
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Summary
Transistor evolution and technology trends IC design methodologies Design styles
Full custom Standard cell Gate-array Macro-cell FPGA Combinations
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