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INTRODUCTION
Currently known fundamental passive elements
HISTORY
In
1971 LEON CHUA postulated a new twoterminal circuit element characterized by a relationship between charge and flux linkage and claimed it as a fourth fundamental circuit element. In year 2008 Hp came forward with the first memristor. Greg snider and Stanley williams were the keyplayers in the team of hp which came forward with the first memristor.
MR. STANLEY WILLIAMS
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Flux
Fig: relationship between different basic circuit parameters
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Contd
Fig: figure shows the missing relationship between flux and charge
WHAT IS MEMRISTANCE
Memristance is a property of an electronic component to
retain its resistance level even after power has been shut down.
When charge flows in one direction, its resistance increases,
CHUAS THEORY
Each memristor is characterized by its memristance function describing the charge-dependent rate of change of flux.
simply the time integral of voltage, and charge is the time integral of current, we may write the more convenient
CONTD..
This equation reveals that memristance defines a linear
relationship between current and voltage, as long as charge does not vary. Of course, nonzero current implies instantaneously
memory effect.
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A memristor is a nonlinear resistor, a resistor whose resistance changes over time based on the amount and direction of current that has passed through it.
Fig: an array of 17 memristors in a row
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CONTD
As with a pipe analogy:
property that if water flows through it one direction the diameter shrinks and if it flows in the other direction it expands and once water stops flowing through it,Iit remains the same size until water starts flowing again.
11 Fig: effect of current on resistance of memristor
I-V CHARACTERISTICS
In contrast to ordinary resistors, memristance may be switched to different resistance states based on the history of the voltage applied to the memristor. The behavior of a memristor appear closer to that found in hysteresis curves associated with magnetic materials. Two straight line curves formed may be interpreted as two distinct resistance states, with the remainder of the curve as transition regions between these two states.
Fig: i-v characteristics of memristor
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POTENTIAL APPLICATIONS
Can now think about fabricating a non-volatile random access memory (RAM) or memory chips that don't forget the data when a computer is shut off. Memristors carries a memory of its past. Denser cells allow memristor circuits to store more data than flash memory. Memristor technology could one day lead to systems that can remember and associate patterns in a way similar to how people do i.e. brain like systems. They can act as switches. For some memristors, applied current or voltage will cause a great change in resistance. Such devices may be characterized as switches by investigating the time and energy that must be spent in order to achieve a desired change in resistance.
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LIMITATIONS
The most significant limitation is that the memristors
CONCLUSION
The rich hysteretic v-i characteristics detected in
many thin film devices can now be understood as memristive behaviour. By redesigning certain types of circuits to include memristors, it is possible to obtain the same function with fewer components, making the circuit itself less expensive and significantly decreasing its power consumption.
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REFERENCES
Sally Adee, The Mysterious Memristor. Available at http://www.pdf-
searchengine.com/memristor-pdf.html ebook_pdf.
http://WWW.MEMRISTOR.ORG
http://blogs.spectrum.ieee.org/tech_talk/2008/07/memristors_comi
ng_soon_to_a_br.html.
Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, T.Y, Tseng, Current
status
of
resistive
nonvolatile
memories/memristors,
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