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  • MOSFET Current and Voltage Characteristics

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    sri karthik kadapa
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    The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.

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    MOSFET current and Voltage characteristics

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    MOSFET current and Voltage characteristics

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    The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.

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    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
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    67 views5 pages

    MOSFET Current and Voltage Characteristics

    Uploaded by

    sri karthik kadapa
    The document summarizes the voltage-current characteristics of an n-channel MOSFET. It describes how the channel current is caused by electrons traveling from source to drain under the influence of an electric field. The channel current density is assumed to be uniform across incremental segments of the channel. Integrating the voltage drop across segments using the boundary conditions yields an expression for drain current that depends on gate voltage, drain voltage, and device parameters like mobility and oxide capacitance. The drain current is zero when gate voltage is below threshold and follows a quadratic relationship with drain voltage when above threshold.

    Copyright:

    © All Rights Reserved
    Download as PPT, PDF, TXT or read online from Scribd
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    of 5

    MOSFET Current Voltage Characteristics

    Consider the cross-sectional We assume the threshold


    view of an n-channel MOSFET voltage is constant along the
    operating in linear mode channel.
    (picture below) The channel voltage Vc has
    VGS > VT0 VDS boundary conditions:
    VS =0
    +
    - Vc at x=0=VS=0 and Vc at x=L=VDS
    n+ Channel n+
    The channel is inverted from
    Source Drain the source end to the drain end.
    y
    x=0 x x=L Other voltages of interest are:
    p-type substrate Depletion Region VGSVT0 and
    VB =0 VGD=VGS-VDSVT0
    MOSFET Voltage Characteristics
    The channel current (drain QI(x)=-Cox[VGS-Vc(x)-VT0]
    current ID) is caused by The thickness of the inversion
    electrons in the channel region layer tapers along the channel
    traveling from source to drain from the source towards the
    under the influence of the drain because the influence of
    lateral electric field. Vgate-tochannel decreases from
    If the total mobile electron source to drain.
    charge in the surface inversion If we consider a small
    layer is assigned the vaiable incremental resistance dR for a
    QI(x), we can thus express this differential segment of the
    charge as a function of the gate- channel assuming constant
    to-source voltage VGS and the electron mobility mn at the
    channel voltage Vc(x) surface we have: dR dx
    Wm n QI ( x )
    MOSFET Voltage Current Characteristic

    The variable W represents the Applying Ohms law for this


    channel width. segment yields the voltage drop
    The electron surface mobility along the incremental segment
    mn depends on the doping dx: dV I dR I dx D

    Wm n QI ( x )
    c D

    concentration of the channel


    region. The above equation can now be
    We further assume that the integrated along the channel
    channel current density is from x=0 to x=L using the
    uniform across the segment boundary conditions for Vc
    where we are measuring the We get:
    incremental resistance.
    VGS Vc VT 0 dVc
    VDS
    ID flows between the source and I D L Wm n Cox
    0
    drain.
    MOSFET Voltage Current Characteristics

    Assuming that the channel The drain current ID also


    voltage Vc is the only variable depends on the devices channel
    that depends on position x, the length and width.
    drain current is determined to
    be:
    mC W

    I D n ox 2VGS VT 0 VDS VDS2
    2 L
    This equation shows the
    dependence of the drain current
    on the process parameters such
    as oxide capacitance, carrier
    mobility, and bulk to source
    voltage.
    MOSFET Voltage Current
    Characteristics
    The equations:
    I 0 when V gs Vt
    ds
    2

    V
    I V gs Vt V ds for
    ds ds 2


    0 V V gs Vt equvalentl y VGS VT 0 ; VGD VGS V DS VT 0
    ds

    I

    V gs Vt
    2

    for 0 V gs Vt V
    ds 2 ds
    represent a simple view of the MOS transistor DC Voltage current
    equations.
    There are models that better calculate the MOS transistors operation
    with accuracy.

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