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Silicon:
Eg = 1.12eV
Si(T = 300K): ni (T = 300K)= 1010/cm3
TEST A
1) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm.
.208eV
Ec
.29eV
EFS
Ei
Ev
d) Determine the capacitance per unit area (you may assume slow speed)
ox (3.9)8.85 1014
Cox 6
3.45 107 F / cm 2
tox 10 cm
TEST A
e) Determine the threshold voltage
qN DW (s )
VTP Vg (S 2F ) s ( n type)
Cox
1/ 2 1/ 2
2 2
WT W (S 2F ) Si S Si 2F
qN D qN D
.208
Nd ni exp 3 10 / cm
13 3
.026
ox (3.9)8.85 1014
Cox 6
3.45 107 F / cm2
tox 10 cm
1
2 2(11 .8)8.85 1014
1
2 2
W Si 2F ( .416) 4.26 104 cm
1.6 10 3 10
19 13
qNd
VTP 2F
qNdW ( 2F )
.416
1.6 1019 3 1013 4.26 104 .476V
Cox 3.45 107
2) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm. Determine the mode of operation
.297eV
Ec
EFS
.33eV Ei
Ev
F .297V
This is an n - type MOS - C F .297V
S .033V
S 0 Accumulation
TEST A
3) Below is a band diagram of a Silicon based MOS Capacitor at room temperature. You may assume
that tox = 100nm=10-6cm.
a) What type of MOS-C?
b) Determine F
c) Determine S
d) What mode of operation is the MOS-C in.
e) Determine the concentration of electrons at the surface
f) Determine the Applied Gate voltage, Vg.
g) Determine the capacitance per unit area
h) Determine the threshold voltage
i) Suppose that the applied gate voltage is changed to -1Volt. Would the Capacitance of the
MOS capacitor go up or down? Justify your answer.
a) p-type Ec
b F = .32 V
c s = .6 V Ei
d) Depletion .28eV EFS
e)
Ev
.32eV
.28
n ni exp 4.75 10 / cm
14 3
.026
EFM
qNaW (S )
f ) Vg S
Cox
q
Na ni exp F 2.2 1015 / cm3
KT
ox (3.9)8.85 10 14
Cox 6
3.45 10 7 F / cm 2
tox 10 cm
1
1
2 2 2(11 .8) 8.85 10 14 2
W Si S (.6) 5
5.96 10 cm
qN a 1.6
10 19
2.2
1015
Vg S
qNaW (S )
.6
1.6 10 19 2.2 1015 6.16 10 5
.66V
Cox 3.45 10 7
TEST A
qNaW (2F )
h) Vg 2 F
Cox
q
Na ni exp F 2.2 1015 / cm3
KT
Cox
ox (3.9) 8.85 1014
3.45 107 F / cm2
tox 10 6
1
1
2 Si 2(11 .8) 8.85 1014
2 2
W 2F (.64) 5
6.16 10 cm
qNa 1.6 1019
2.2 10 15
Vg 2F
qNaW (S )
.64
1.6 1019 2.2 1015 6.16 105
.703V
Cox 3.45 107
i) It would increase
TEST A
4) Below is the minority carrier distribution in a pn-junction with an applied voltage of -1V.
Determine the small signal junction capacitance per unit area.
pno=3x104
npo=104
x
xp xn
a) Draw the resulting band diagram. Label and provide numerical answers for Vbi, (Vbi-Va), Va, FN, FP
Na 1016 cm 3
Nd .33 1016 cm 3
KT Nd .33 1016
FN ln .026 V ln 10
.33V
q ni 10
KT Na 1016
FP ln .026 V ln 10 .36V
q ni 10
Vbi FP FN .69V
Vbi Va 1.69V
.36eV
EFP
1.69eV
1eV
Ec
EFN
.33eV Ei
Ev
TEST A
b) Draw the corresponding charge distribution. Label and provide numerical values for xn and xp
2 Nd Vbi Va
1/ 2
x p si
q Na ( Na Nd )
xp
16
211 .8 8.87 1014 .33 1016 1.69
1/ 2
2.3 105 cm
1.6 10 19 10 (1.33 1016 )
xn x p
Na
Nd
3 2.3 105 7.0 105 cm
.000533
2.3 10 5 cm
7.0 10 5 cm x
.0016
si 11 .8 8.87 10 14
C' 1.12 10 8 F / cm 2
W 9.3 10 5
qNa
( x) (x xp )
s
qNa (1.6 10 19 )1016
( x 0) (xp ) (2.3 10 5 ) 3.5 10 4 V / cm
s (11 .8)(8.87 10 )14
TEST A
Suppose the applied voltage is change to be +.3 Volts
Draw the resulting band diagram
0.39eV
Ec
EFN
.36eV .3eV
EFP .33eV Ei
Ev
.000533
1.12 105 cm
3.4 105 cm x
.0016
TEST A
Determine the current density assuming Va = .3V and Dn = 25 cm 2/sec, Dp = 10cm2/sec, Ln = Lp = .01cm
qVa
J Jo exp 1
KT
Dn
Jo q n po
Dp
25
pno 1.6 1019 104
10
3 104 8.8 1012
Ln Lp .01 .01
exp(qVa / KT ) exp(qVa / KT ) 110 5
J 8.8 107
TEST A