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Lecture 02
Non Ideal Effects in MOSFETs
Outline
Junction Capacitances
Parasitic capacitances
Velocity Saturation
Channel length modulation
Threshold Voltage
Body effect
Subthreshold conduction
Junction Capacitances
The n+ regions forms a number of
planar pn-junctions with the
surrounding p-type substrate
numbered 1-5 on the diagram.
Planar junctions 2, 3 and 4 are
surrounded by the p+ channel stop
implant.
Planar junction 1 is facing the
channel while the bottom planar
junction 5 is facing the p-type
substrate with doping NA.
The junction types will be n+/p,
n+/p+, n+/p+ n+/p+ and n+/p.
Junction Capacitances
The voltage dependent
source-substrate and drain-
substrate junction Vgs = 0 Vgd
capacitances are due to + g +
- -
depletion charge s d
surrounding the source or n+ n+
drain diffusion regions
p-type body
embedded in the substrate. b
The source-substrate and
drain-substrate junctions are
reverse biased under normal
operating conditions.
The amount of junction
capacitance is a function of
applied terminal voltages
Junction Capacitances
All junctions are assumed to
be abrupt.
Given that the depletion
2 Si N A N D
thickness is xd we can
compute the depletion
xd 0 V
q N AND
capacitance of a reverse
biased abrupt pn-junction.
Cgb C0 0 0
Cgd 0 C0/2 0
Cg=Cgs+Cgd+Cgb C0 C0 2/3C0
Velocity Saturation
Ideal carrier velocity relation:
v = mE
E = Vds/L
In reality velocity does not increase forever
with applied field
For high values of Applied field, E ~
10000V/cm
v= mE/(1+E/Esat)
Velocity Saturation and Mobility
Degradation
Recall ideal current equation
I ds Vgs Vt dsat V
V
dsat
2
Vgs Vt
2
2