Chapter 5-1.

PN-junction electrostatics

In this chapter you will learn about pn junction electrostatics:

Charge density, electric field and electrostatic potential existing
inside the diode under equilibrium and steady state conditions.

You will also learn about:

Poissons Equation
Built-In Potential
Depletion Approximation
Step-Junction Solution

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PN-junction fabrication

PN-junctions are created by

several processes including:

1. Diffusion
2. Ion-implantation
3. Epitaxial deposition

Each process results in

different doping profiles

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Ideal step-junction doping profile

3
Equilibrium energy band diagram for the pn junction

EF Ei
n ni exp
kT

Ei EF
p ni exp
kT

EF = same everywhere
under equilibrium

Join the two sides of the

band by a smooth curve.

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Electrostatic variables for the equilibrium pn junction

Potential, V = (1/q) (ECEref). So,

potential difference between the
two sides (also called built-in
voltage, Vbi) is equal to (1/q)(EC).

V EC Eref
1
q

1 dEC 1 dEi
E
q dx q dx

dE = charge density
= Ks o
dx

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Conceptual pn-junction formation

p and n type regions

before junction formation

Holes and electrons will diffuse

towards opposite directions,
uncovering ionized dopant atoms.
This will build up an electric field
which will prevent further
movement of carriers.

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 The built-in potential, Vbi

When the junction is formed, electrons from the n-side and holes
from the p-side will diffuse leaving behind charged dopant atoms.
Remember that the dopant atoms cannot move! Electrons will
leave behind positively charged donor atoms and holes will leave
behind negatively charged acceptor atoms.

The net result is the build up of an electric field from the positively
charged atoms to the negatively charged atoms, i.e., from the n-
side to p-side. When steady state condition is reached after the
formation of junction (how long this takes?) the net electric field
(or the built in potential) will prevent further diffusion of electrons
and holes. In other words, there will be drift and diffusion currents
such that net electron and hole currents will be zero.

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 Equilibrium conditions
Under equilibrium conditions, the net electron current and hole
current will be zero.
E-field

NA = 1017 cm3 ND = 1016 cm3

hole diffusion current

net current = 0
hole drift current

electron diffusion current

opposite to electron flux net current = 0
electron drift current
opposite to electron flux
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 The built-in potential, Vbi

p-side n-side

EC
EF
Ei

EV
p
Ei EF kT ln
EC ni
q Vbi = (Ei EF)p-side + (EF Ei)n-side
Ei

EV n
EF Ei kT ln
ni

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 The built-in potential, Vbi

The built-in potential, Vbi, measured in Volts, is numerically

equal to the shift in the bands expressed in eV.

Vbi = (1/q) {(Ei EF)p-side + (EF Ei)n-side }

kT p kT n
ln ln
q ni q ni
kT pp nn
ln
q n2
i
where pp hole concentrat ion on p side
and nn electron concentrat ion on n side

pp nn q Vbi
An interesting fact: exp
pn np kT 10
Majority and minority carrier concentrations

p-side NA ND n-side

pp
nn

pn
np
x
xp xn
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Built-in potential as a function of doping concentration
for an abrupt p+n or n+p junction

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Depletion approximation

dE
Poisson equation
dx Ks0
q
( N D N A ) for xp x xn
K s 0
0 everywhere else

We assume that the free carrier

concentration inside the depletion
region is zero.

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 Example 1

A p-n junction is formed in Si with the following parameters.

Calculate the built-in voltage, Vbi.

ND = 1016 cm3 NA = 1017 cm3

Calculate majority carrier concentration in n-side and p-side.

Assume nn = ND = 1016 cm3 and pp = NA= 1017 cm3.

kT pp nn NA ND
Vbi ln kT ln
q n2 q n2
i i

Plug in the numerical values to calculate Vbi.

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 Example 2
A pn junction is formed in Si with the following parameters.
Calculate the built-in voltage, Vbi.

ND = 2 1016 cm3 NA = 3 1017 cm3

NA = 1 1016 cm3 ND = 2 1017 cm3

Calculate majority carrier concentration in n-side and p-side.

nn = effective ND = 1016 cm-3; pp = effective NA = 1017 cm3

kT pp nn kT N A N D
Here NA and ND
Vbi ln ln are effective or
q 2 q n2
i
n i net values.

Plug in the numerical values to calculate Vbi.

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