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Depletion (a)
(b)
Vg > Vt
Example with an NMOS +
inversion region
depletion region
capacitor -
(c)
n+ n+
p-type body
b
- -
s d
n+ n+ Vds = 0
p-type body
b
Linear Region:
Vgs > Vt
Vgs > Vgd > Vt
If Vds > 0, Current flows + g +
- - Ids
from d to s ( e- from s to d) s d
Vgs > Vt
g Vgd < Vt
+ +
- -
s d Ids
n+ n+
Vds > Vgs-Vt
p-type body
b
Qchannel =
gate
Vg
polysilicon + +
gate source Vgs Cg Vgd drain
W
Vs - - Vd
channel
tox n+ - + n+
SiO2 gate oxide
Vds
L
n+ n+ (good insulator, ox = 3.9) p-type body
p-type body
Qchannel = CV
C=
gate
Vg
polysilicon + +
gate source Vgs Cg Vgd drain
W
Vs - - Vd
channel
tox n+ - + n+
SiO2 gate oxide
Vds
L
n+ n+ (good insulator, ox = 3.9) p-type body
p-type body
Qchannel = CV
C = Cg = oxWL/tox = CoxWL Cox = ox / tox
V = Vgc Vt = (Vgs Vds/2) Vt
gate
Vg
polysilicon + +
gate source Vgs Cg Vgd drain
W
Vs - - Vd
channel
tox n+ - + n+
SiO2 gate oxide
Vds
L
n+ n+ (good insulator, ox = 3.9) p-type body
p-type body
I ds Vgs Vt
Vdsat
2 Vdsat
Vgs Vt
2
0 Vgs Vt cutoff
I ds Vgs Vt ds Vds Vds Vdsat
V
linear
2
Vgs Vt
2
Vds Vdsat saturation
2
2
= 350 cm2/V*s
Vt = 0.7 V 1.5 Vgs = 4
Ids (mA)
Plot Ids vs. Vds 1
Vgs = 3
Vgs = 0, 1, 2, 3, 4, 5 0.5
Vgs = 2
Use W/L = 4/2 Vgs = 1
0
0 1 2 3 4 5
Vds
W 3.9 8.85 1014 W W
Cox 350 120 A /V 2
L 100 108 L L
polysilicon
gate
W
tox
L SiO2 gate oxide
n+ n+ (good insulator, ox = 3.90)
p-type body
VDD
VDD
VSS
VDD
Vs = |Vtp| VDD-Vtn
VDD VDD-2Vtn
VSS
Unit transistors
May refer to minimum contacted device (4/2 )
Or maybe 1 m wide device
Doesnt matter as long as you are consistent
2 Y 2
A
1 1
2C
2C
2C
2 Y 2
A Y
1 1
C
R C
2C
2C 2C
2C 2C
2 Y 2
A Y
1 1 R C
C
R C C
2C 2C
2C 2C
2 Y 2
A Y
1 1 R C
C
R C C
d = 6RC
EE 447 VLSI Design
3: CMOS Transistor T 32