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MOSFET Operation: Step-by-Step
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MOSFET Operation: Step-by-Step
In the sub-threshold regime, the drain current is a small
leakage current since only a small number of electrons can
pass over the potential barrier separating the drain and the
source. This regime is called the sub-threshold regime of
operation. An increase in a gate voltage in this regime leads
to a reduction of the barrier height and, hence, to an
exponential increase of this small sub-threshold current. At
larger gate voltages, the barrier is reduced so much that
electrons can enter the channel from the source and
effectively from the second conducting plate of the MIS
capacitor. At that point, a further increase in the gate voltage
leads to a proportional increase of the electronic charge, qns,
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in the channel.
MOSFET Example
Example
The electron concentration in the drain and source contact
regions of a Si MOSFET is 1018 cm-3. The electron
concentration in the MOSFET channel at zero drain-to-source
bias in the sub-threshold regime of operation is 109 cm-3.
Estimate the barrier height between the source and the drain. 4
MOSFET Example
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MOSFET Sub-threshold
Voltage Slope
Sub-threshold characteristics of a MOSFET:
exponential dependence ID ~ exp (VG/kT).
Vsub.slope = 60 mV.
Vap 2
I S exp
I2
nk BT
ln10
ln ln
I1 Vap1
I S exp
nk BT
Vap 2 Vap1
2.3; for n 1
nk BT
V Vap 2 Vap1 2.3 0.026
0.060[V ] 6
I-V in Sub-threshold and Above
Threshold Regimes
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MOSFET I-V Curves
Idealized drain
characteristics of a
MOSFET. For VD ~ VDsat,
the drain current remains
constant.
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Four types of MOSFETs
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MOSFET Physics
Threshold voltage 10
MOSFET Physics
Threshold voltage 11
MOSFET Physics
Current-Voltage Characteristics 12
MOSFET Physics
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Current-Voltage Characteristics, Saturation
MOSFET I-Vs
Current-Voltage
Characteristics
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MOSFET PSPICE Circuits
-1 .0 0 0 V 4 .2 2 5 u A
R 1
-1 .0 0 0 V
1
I
-1 .0 0 0 V -1 .0 0 0 V
1Vdc
M 4 -4 .2 2 5 u A
V1 4 .2 2 5 u A
0A
0A
V2 -6 5 0 .0 m V M b re a k P 4 . 21 2. 05 u1 A0 p A
-0 .6 5 0 V d c
0
0
0V
0
0