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E EC EC
ED ED
EG EG
T=0K T>0K
EV EV
valence electrons holes
x 1 1
1 ED EF ED E F
f donor 1 exp ; f acceptor 1 4 exp
2 k BT k T
B
nD N D f donor
The temperature dependence of the conducting electron
concentration in an n-type semiconductor 1
Doped Semiconductors
conducting electrons
E EC EC
ED ED
neutral ionized Nd
donors EG donors EG
T=0K T>0K
EV EV
valence electrons conducting
electrons
4
Intrinsic and Doped
Semiconductors
Example: Si is doped by donor atoms with concentration
ND=1017 cm-3 and activation energy ED=20 meV. Calculate
number of conducting electrons at room temperature
Ec
3
n ni nD ; ni 10 cm N D
10 EF
ED
EC ED
nD N D exp ; EF EC ED / 2
2 k BT
0.02
10 exp
17
10 17
0.68
2 0.026 EV
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Non-equilibrium Carriers in
Semiconductors: Quasi-Fermi level
However, the electron population is near equilibrium
within the conduction energy band, and the hole
population is near equilibrium within the valence energy
band. Thus, the population of electrons over the
conduction band states, if ne< NC, follows MB statistics,
where EFn is electron quasi-Fermi energy level:
EC EFn
n( E ) N C exp
kT
NC
and EFn ( E ) EC kT ln
n ( E )
8
Carriers in Semiconductors:
Summary and Control Questions
Find Fermi energy level (or just Fermi level) in an
photon photon
hv hv
Eg
phonon
k k
HH HH
LH
Split off LH Split off
Direct Band Gap Indirect Band Gap 10
Semiconductor Band Structure
and K-space: Control question
In terms of band structure, what is the
difference between direct and indirect
band semiconductor?
11
Semiconductor Band Structure
and K-space: Control question
In terms of band structure, what is the
difference between direct and indirect
band semiconductor?
E E
Direct, Indirect,
GaAs, III-V Si, Ge
k k 12
Electron Motion Under Applied
Voltage: Carrier Drift
V
I ;E V / x
R
1 vdr
; J E; en dr en
E
14
Carrier Mobility & Velocity:
Thermal Velocity
15
Carrier Diffusion
16
Carrier Diffusion
k BT
Dn n ; vdrif t n E ;
q
v cm 2 q V cm 2 cm 2
n ; Dn s s
E Vs
Q V
18
Drift Velocity: Constant Mobility
and Saturation
vdrift E
Constant
mobility low
electric field
mobility
Negative
differential
mobility
19
Carrier Mobility & Drift Velocity
20
Carrier Mobility & Drift Velocity
21
Carrier Mobility & Drift Velocity
22
Carrier Mobility & Drift Velocity
23
Carrier Mobility & Drift Velocity
24
Mobility, Carrier Effective Mass
and Time Between Collisions
vdrift E
q n , p
n, p *
m n, p
25
Carrier Mobility & Drift Velocity:
Scattering
26
Carrier Mobility & Drift Velocity:
Scattering
Double log plot of drift mobility vs temperature for n-type Ge and n-type
Si samples. Various donor concentrations for Si are shown. The upper right
inset is the simple theory for lattice limited mobility whereas the lower left
inset is the simple theory for impurity scattering limited mobility. 27
Carrier Mobility & Drift Velocity
Control questions:
29
Carrier Mobility & Drift Velocity
30
Table of Important Semiconductor
Properties
31
Basic Equations (selected)
32
Summary. Distribution Functions
& Densities of States.
33
Summary: Electron & Hole Concentration
in Intrinsic Semiconductor
Eg
n p n N C NV exp
2
i
kT
Eg Eg E F
n N C NV exp N C NV exp
2kT kT
34
Summary. Electron & Hole
Concentration.
35
Summary. Carrier Drift Velocity.
36
Complete data on major
semiconductors
http://www.ioffe.rssi.ru/SVA/NSM/Semicond/index.html
http://ece-www.colorado.edu/~bart/book/
http://jas.eng.buffalo.edu/
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