Schottky Barrier: Example

Consider a chrome-silicon metal-semiconductor junction with Nd =

1017 cm-3. Calculate the barrier height and the built-in potential.
Repeat for a p-type semiconductor with the same doping density.
Solution
N-type - The barrier height equals:

The built-in potential equals (VT is a thermal voltage, kTr=25.9 meV):

P-type -The barrier height for the chrome/p-silicon junction equals:

And the built-in potential equals:

1
Schottky Barrier

2
 Schottky Barrier

IV Characteristics of a Schottky junction exhibits

rectifying properties
3
 Schottky Barrier: Forward and
Reverse Bias
As a negative (reverse) voltage is applied (Figure (b)), the
Fermi energy of the metal is raised with respect to the
Fermi energy in the semiconductor. The potential across
the semiconductor now increases, yielding a larger
depletion region and a larger electric field at the
interface. The metal-semiconductor junction with
positive barrier height has therefore a pronounced
rectifying behavior. A large current exists under forward
bias, while almost no current exists under reverse bias.
The potential across the semiconductor therefore equals
the built-in potential, minus the applied voltage Va.

4
Schottky Barrier
The principle of
the Schottky
junction solar
cell

5
Schottky Barrier
The principle of
the Schottky
junction solar
cell

6
 Schottky Barrier

Reverse biased Schottky photodiodes are

7
frequently used as fast photodetectors
 Schottky Barrier:
Poissons Equation
The general analysis starts by setting up
Poisson's equation

where the charge density, , is written as a function of

the electron density n, the hole density p and the donor
ND and acceptor NA densities.

8
 Schottky Barrier:
Poissons Equation

A complex, non-linear, second order differential

equation without analytical solution

9
 Schottky Barrier:
Poissons Equation
The simple analytic model of the metal-semiconductor
junction is based on the full depletion approximation.
This approximation is obtained by assuming that the
semiconductor is fully depleted over a distance xd, called
the depletion region. While this assumption does not
provide an accurate charge distribution, it does provide
very reasonable approximate expressions for the electric
field and potential throughout the semiconductor.

10
 Schottky Barrier:
Poissons Equation
To find the depletion layer width, we start calculate the
electric field and the potential across the semiconductor
as a function of the depletion layer width. We then solve
for the depletion layer width by requiring the potential
across the semiconductor to be equal the difference
between the built-in potential and the applied voltage.
As the semiconductor is depleted of mobile carriers
within the depletion region, the charge density in that
region is due to the ionized donors. Outside the depletion
region, the semiconductor is neutral.

11
 Schottky Barrier:
Poissons Equation
( x ) qN D qN D ; 0 x xD
( x ) 0; x xD
Using Gauss's law {E(x)=f[q(x))]}we obtain the electric
field as a function of position
qN D
E ( x) ( xd x ); 0 x xD
0 s
E ( x) 0 x xD
12
 Schottky Barrier:
Poissons Equation
Since the electric field is equal minus the gradient of the
potential, the potential is calculated by integrating the
expression for the electric field
xD xD
qN D
( x ) E ( x )dx ( xd x )dx
0 0
0 s
2
qN x
Inside the depletion region ( x) D
2 0 s

2 0 s ( Vappl )
For the depletion region width xD
qN D
13
Schottky Barrier: Basic Equations

14
Schottky Barrier: Depletion Layer
Width with Applied Bias
Dielectric permittivity of vacuum and semiconductor
(s and 0), electron charge (q), donor concentration
(ND), built-in voltage and applied voltage (VBI and
VAPPL). Check units!

2 s 0
WD VBI VAPPL
qN D
F V
cm 2
3
cm Q cm 15
Schottky Barrier: Depletion Layer
Width with Applied Bias
2 s 0
WD VBI VAPPL
qN D
Example: calculate depletion region for Schottky
barrier in n-type Si with zero bias and 0.5 V built-in
potential and donor concentration of 1016 cm-3

16
Schottky Barrier: Depletion Layer
Width with Applied Bias
2 s 0
WD VBI VAPPL
qN D
14 11.8
2 8.85 10 11.8
2 8.85 0.5 11
19
0.5
10
1.6 10 10 16
1.6
5 cm
6.53 1010 2.55 10

Compare this result to the next page graph

17
Schottky Barrier: Maximum
Depletion Layer Width
Maximum
depletion-
layer width
versus
impurity
concentration
of Si and
GaAs under
strong-
inversion
condition.
18
Schottky Barrier: Diode Equation
and Thermionic Emission

19
Schottky Barrier: Summary

20
Schottky Barrier: Carrier
Tunneling

21
Schottky Barrier: Carrier
Tunneling

22
Schottky Barrier and Ohmic
Contact

23
Schottky Barrier and Ohmic
Contact

24