Rangkaian Kontrol

Elektronika Daya
Komponen Elektronika Daya
Teori Penyalaan

1.2 Uncontrolled device Power diode

Appearance

PN junction

Direction of
inner electric field
-

p region

Space charge
Region
(depletion region,
potential
barrier region)

n region

PN junction with voltage applied in the forward direction

+
+

+
+

W
WO

PN junction with voltage applied in the reverse direction

Effective direction
of electronic field
-

+
+

+
+

WO
W

Construction of a practical power diode

Anode
+
+

19

-3

Na =10 cm

10m
14

Breakdown
Voltage dependent

19

250m

n + epi

Nd =10 cm

-3

n- substrate

-3

-3

Cathode

Nd =10 cm

Features different from low-power (information electronic) diodes

Larger size
Vertically oriented structure
n drift region (p-i-n diode)
Conductivity modulation
Junction capacitor
The positive and negative charge in the depletion region is variable with the
changing of external voltage. variable with the changing of external
voltage.
Junction capacitor C Junction capacitor CJ .
Potential barrier capacitor CB
Junction capacitor CJ
Diffusion capacitor CD

Junction capacitor influences the switching characteristics of

power diode.

Static characteristics of power diode

I
IF

UTO UF

Turn-off transient
IF

diF
dt
tF t 0

Turn- on transient
u
iF
i
UFP

trr
td

UF

tf
t1 t 2
diR
dt
IR
P

UR
P

UR

2V
0

uF
t fr

Examples of commercial power diodes

part number

Rated max voltage

Fast recovery rectifiers

1N3913
400V
SD453N25S20PC
2500V
Ultra-fast recovery rectifiers
MUR815
150V
MUR1560
600V
RHRU100120
1200V
Schottky rectifiers
MBR6030L
30V
444CNQ045
45V
30CPQ150
150V

Rated vag current

VF(typical)

tr(max)

30A
400A

1.1V
2.2V

400ns
20s

8A
15A
100A

0.975V
1.2V
2.6V

35ns
6ns
60ns

60A
440A
30A

0.48V
0.69V
1.19V

1.3 Half- controlled deviceThyristor

Another name: SCRsilicon controlled rectifier

Thyristor Opened the power electronics era
1956, invention, Bell Laboratories
1957, development of the 1st product, GE
1958, 1st commercialized product, GE
Thyristor replaced vacuum devices in almost every power processing area.
Still in use in high power situation. Thyristor till has the
highest power-handling capability.

Appearance and symbol of thyristor

Structure and equivalent circuit of thyristor

Structure
A

Equivalent circuit
A

Equivalent
PNP
circuit
V

IA
P1
N1

N1
G

P2

P2

IG

Ic2

Ic1
NPN

V2
IK

N2
K
K
a)

b)

Physics of thyristor operation

Equivalent circuit: A pnp transistor and an npn

A
IA

transistor interconnected together

PNP

V1
G

IG
S

Ic2

Positive feedback
R

Ic1
NPN

V2
IK

EG
K

EA

Trigger
Can not be turned off by control
signal
Half-controllable

Quantitative description of thyristor operation

I c1= 1 IA + I CBO1
I c2= 2 IK + I CBO2
IK=IA+I
IA=Ic1+Ic2
G

IA

IG ICBO1 ICBO2
1 (1 2 )

1-1
1-2
1-3
1-4
( 1-5 )

When IG =0, 1+2 is small.

When IG >0, 1 +2 will approach 1, IA will be very large.

Other methods to trigger thyristor on

High voltage across anode and cathodeavalanche breakdown
High rising rate of anode voltagte du/dt too high
High junction temperature
Light activation
Static characteristics of thyristor
Blocking when reverse biased, no matter if there is gate current applied.
Conducting only when forward biased and there is triggering current
applied to the gate.
Once triggered on, will be latched on conducting even when the gate
current is no longer applied.

Switching characteristics of thyristor

100%
90%

10%
0
u

td

tr

AK

I RM
t

t rr

URRM

tgr

1.4 Typical fully- controlled devices

Features
IC fabrication technology, fully- controllable, high frequency

Applications
Begin to be used in large amount in 1980s
GTR is obsolete and GTO is also seldom used today.
IGBT and power MOSFET are the two major power
semiconductor devices nowadays.

1.4.1 Gate- turn- off thyristorGTO

Major difference from conventional thyristor:

The gate and cathode structures are highly interdigitated , with various types
of geometric forms being used to layout the gates and cathodes.

Physics of GTO operation

The basic operation of GTO is the
same as that of the conventional
thyristor. The principal
differences lie in the
modifications in the
structure to achieve gate turnoff capability.
Large 2
1+2 is just a little larger than
the critical value 1.
Short distance from gate to
cathode makes it possible to
drive current out of gate.

A
IA

PNP

V1
G

IG
S

Ic2

Ic1
NPN

V2
IK

EG
K

EA

1.4.2 Giant TransistorGTR

GTR is actually the bipolar junction transistor that can handle

high voltage and large current.
So GTR is also called power BJT, or just BJT.

Structures of GTR different from its information-processing

counterpart

Static characteristics of GTR

Ic

Saturation region
Amplifying (active) region

i b3
i b2
i b1

i b1<i b2<i b3

cut-off region
O

Uce

Second breakdown of GTR

Hard
Quasi-saturation
saturation
1
Rd
c

Second breakdown

IB5 >IB4. etc.

IB5
IB4
IB3

Active region

Primary
breakdown

IB2
IB<0

IB1
O

IB=0

IB=0
BVSUS

BVCEO

BVCBO UCE

1.4.3 Power metal- oxide- semiconductor field effect transistorPower

MOSFET
A classification
Field Effect
Transistor
(FET)

Metal- onside-semiconductor FET (MOSFET)

n channel

Power MOSFET

p channel
Junction FET (JFET)

Static induction transistor (SIT)

Basic structure

Symbol
D

G
S
N channel

S
P channel

 Physics of MOSFET operation (Off- state)

p-n- junction is
reverse-biased
off-state voltage
appears across
n- region

Physics of MOSFET operation (On-state)

p-n- junction is slightly reverse biased positive gate voltage induces
conducting channel drain current flows through n- region an
conducting channel on resistance = total resistances of nregion,conducting channel,source and drain contacts, etc.

Static characteristics of power

iD
[UGS-VGS(th)=UDS]

Ohmic

VGS5
Active

VGS5> VGS4 etc.

VGS4
VGS3
VGS2
VGS1
O

Cut off
BVDSS

VGS< VGS(th)

UDS

Switching characteristics of power MOSFET

+U E
RL
iD
Rs
up

RG uGS R D
F i

up
O

uGS
uGSP
uT
O
iD

O td(on)

Turn- on transient
Turn- on delay time td(on)
Rise time tr

tr

td (off) tf

Turn- off transient

Turn- off delay time td(off)
Falling time tf

Examples of commercial power MOSFET

part number Rated max voltage Rated vag current

IRFZ48
IRF510
IRF540
APT105M25BN
R IRF740
MTM15N40E
APT5025BN
APT1001RBNR

60V
100V
100V
100V
400V
400V
500V
1000V

50A
5.6A
28A
75A
10A
15A
23A
11A

Ron

Qg(typical)

0.018

110nC

0.54
0.077
0.025
0.55
0.3
0.25
1.0

8.3 nC
72 nC
171 nC
63 nC
8.3 nC
110 nC
83nC
150 nC

1.4.4 Insulated- gate bipolar transistorIGBT

Combination of MOSFET and GTR

GTR: low conduction losses (especially at larger blocking volta ges),

longer switching times, current- driven

IGBT

MOSFET : faster switching speed, easy to drive (voltage- driven),

larger conduction losses (especially for higher blocking voltages)

Features
On- state losses are much smaller than
those of a power MOSFET, and are
comparable with those of a GTR
Easy to drive similar to power
MOSFET
Faster than GTR, but slower than power
MOSFET
Structure and operation principle of
IGBT
Also multiple cell structure Basic structure
similar to power MOSFET, except extra
p region On- state: minority carriers
are injected into drift region, leading to
conductivity modulation
compared with power MOSFET: slower
switching times, lower on- resistance,
useful at higher voltages (up to 1700V)

Emitter Gate
G
E
N+ P N+ N+ P N+
J3 J2 NN+
+
J1 P
C Collector

Drift region
Buffer layer
Injecting layer

Equivalent circuit and circuit symbol of IGBT

+
V
J1
R
ID N
+- Drift region
G

+ resistance
IDRon
E

C
IC
C
G
E

Switching characteristics of IGBT

UGE
90%UGEM
10%UGEM
0
IC
90%ICM
10%ICM
0

UCE

UGEM

ICM

td(on) t r

td(off)

tf

t fi1 t fi2
ton

toff

UCEM

t fv1

current tail

t fv2
UCEon

Examples of commercial IGBT

part number Rated max voltage Rated avg current VF(typical tf(typical)
Single-chip devices
600V
HGTG32N60E2
1200V
HGTG30N120D2
multiple-chip power modules_
600V
CM400HA-12E
1200V
CM300HA-24E

32A
30A
400A
300A

2.4V
3.2V

0.62s
0.58s

2.7V
2.7V

0.3s
0.3s
8.3 nC

SCR / Thyristor
Circuit Symbol and Terminal Identification

ANODE

GATE

SCR
2N3668

CATHODE

SCR / Thyristor
Anode and
Cathode terminals
as conventional
pn junction diode

ANODE

GATE

Gate terminal for

a controlling input
signal

SCR
2N3668

CATHODE

SCR/ Thyristor
An SCR (Thyristor) is a controlled
rectifier (diode)
Control the conduction under forward
bias by applying a current into the
Gate terminal
Under reverse bias, looks like
conventional pn junction diode

SCR / Thyristor

Anode

4-layer (pnpn)
device
Anode, Cathode as
for a conventional
pn junction diode

N
Gate
P

Cathode Gate
brought out for
controlling input

Cathode

ANODE

Equivalent Circuit
ANODE

P
Q1

N
GATE

BJT_PNP_VIRTUAL

Q2
GATE
BJT_NPN_VIRTUAL

N
CATHODE

CATHODE

Apply Biasing
Variable
50V

With the Gate terminal

OPEN, both transistors
are OFF. As the applied
voltage increases, there
will be a breakdown
that causes both
transistors to conduct
(saturate) making IF > 0
and VAK = 0.
VBreakdown = VBR(F)

IF

ANODE (A)

Q1

IC2=IB1

BJT_PNP_VIRTUAL

GATE (G)

IC1 = IB2

Q2

BJT_NPN_VIRTUAL

IF
CATHODE (K)

Volt-Ampere Characteristic
IF

Holding Current IH

VBR(F)

VAK

Breakdown Voltage

Apply a Gate Current

For 0 < VAK < VBR(F),

Variable
50V

Turn Q2 ON by applying a
current into the Gate

ANODE (A)

IF
IC2 =
IB1

Q1

This causes Q1 to turn ON,

and eventually both
transistors SATURATE

BJT_PNP_VIRTUAL

GATE (G)

VAK = VCEsat + VBEsat

VG
If the Gate pulse is
removed, Q1 and Q2 still
stay ON!

IB2

Q2

BJT_NPN_VIRTUAL

CATHODE (K)

IF

How do you turn it OFF?

Cause the forward current to fall
below the value if the holding
current, IH
Reverse bias the device

SCR Application Power Control

XSC1
G
A

R
25kOhm
Key = a
Vs
170V
120.21V_rms
60Hz
0Deg

D1
2N1776

Rload
15ohm

C
0.01uF

60%

When the voltage

across the capacitor
reaches the triggerpoint voltage of the
device, the SCR turns
ON, current flows in
the Load for the
remainder of the
positive half-cycle.
Current flow stops
when the applied
voltage goes negative.

Input / Output Voltages

Look at the LOAD Current

Conduction time Conduction Angle = 180

-
Firing time Firing Angle ()

Power MOSFETs
(high-speed, voltage-controlled switches that
allow us to operate above the 20kHz audible
range)
D: Drain

If desired, a series
blocking diode can
be inserted here to
prevent reverse
current

G:
Gate
S:
Source

Switch closes
when VGS 4V,
and opens when
VGS= 0V

N channel MOSFET equivalent circuit

Controlled turn on, controlled turn of
(but there is an internal antiparallel diode)
49

We Avoid the Linear (Lossy) Region,

Using Only the On and Of States
MOSFET on

MOSFET of

when VGS = 12V

when VGS = 0V
50

We Want to Switch Quickly to Minimize

Turn OfSwitching Losses Turn On
VDS(t)

VDS(t)

I(t)

to

I(t)

ton

PLOSS(t)

PLOSS(t)

Energy lost per

turn of

Energy lost per

turn on

Turn of and turn on times limit the frequency of

operation because their sum must be considerably less
than period T (i.e., 1/f)

51

Consider, for example, the turn of

Turn Of
VDS(t)

V I tof ,
so we want to keep turn
of (and turn on) times
as small as possible.

0
I(t)
I

The more often we switch, the

more energy loss areas we
experience per second.

to

Thus, switching losses (average

W) are proportional to switching

0
PLOSS(t)
0

Energy lost per turn of

is proportional to

Energy
lost per
f
turn of

frequency f, V, I, tof, and ton.

And, of course, there are conduction losses that

are proportional to squared I

52

Advantages of Operating Above 20kHz

Yes, switching losses in power electronic switches do
increase with operating frequency, but going beyond
20kHz has important advantages. Among these are
Humans cannot hear the circuits
For the same desired smoothing efect, Ls and Cs can
be smaller because, as frequency increases and period
T decreases, Ls and Cs charge and discharge less
energy per cycle of operation. Smaller Ls and Cs
permit smaller, lighter circuits.
Correspondingly, L and C rms ripple currents decrease, so
current ratings can be lower. Thus, smaller, lighter
circuits.
AC transformers are smaller because, for a given voltage
rating, the peak flux density in the core is reduced (which
means transformer cores can have smaller cross sectional
areas A).
d Bmax sin(t )
d
dB
v(t ) N
NA
NA
NABmax cos(t )

dt

dt

Thus, smaller, lighter circuits.

dt

53

Construction & Operation of IGBT

The operation of the IGBT simply can be treated as a partitioning of an
N-channel MOSFET and a PNP bipolar transistor.
The IGBT functions as a bipolar transistor that is supplied base current
by a MOSFET.
EMITTER

GATE

COLLECTOR

NGATE

N+
P+

COLLECTOR

Structure Of IGBT

EMITTER

Equivalent Circuit
55/45

What`s a IGBT ?

IGBT(Insulated Gate Bipolar Transistor) is a voltage-controlled power transistor, similar

to the power MOSFET in operation and construction.
These devices offer superior performance to the bipolar-transistors. They are core costeffective solution in high power, wide range of frequency applications

COMPARISON TABLE
T R

IGBT

MOSFET

CURRENT

VOLTAGE

VOLTAGE

CONTROL POWER

HIGH

LOW

LOW

CONTROL CIRCUIT

COMPLEX

SIMPLE

SIMPLE

LOW

LOW

HIGH

SWITCHING SPEED

SLOW

MEDIUM

FAST

SWITCHING LOSS

HIGH

MEDIUM

LOW

ITEM

SYMBOL
CONTROL PARAMETER

ON-RESISTANCE

56/45

Absolute Maximum Rating of IBGT

Symbol
BVCES
BVGES
ICmax
ICpeak
PCmax

Descriptions
Maximum voltage applicable between C-E (The Gate-Emitter is short-circuited)
Maximum voltage applicable between G-E
Maximum DC current can flow into the collector. Indicated by radiation condition (ex:
TC=25C)
Maximum Peak current can flow into the collector. Indicated by current pulse
width(ex:10s) and Duty-cycle(ex:below 1%), and Radiation condition.
Allowable collector loss and maximum current consumption.
In usual case, at the temperature of TC (ex : 25C), the thermal resistance
PC (max)
Tj(max) - TC
Rjc = ---------------------

FBSOA

SCSOA

becomes and usually indicated by its upper limit.

Forward Bias Safe Operating Area

It is the maximum pulse responding operation range to the voltageVce between C-E
and the graph of the collector current. The characteristics of the high voltage part is
deteriorated due to the thermal loss and the over concentration of current.
It is because of the phenomena called the second breakdown mode.
Short Circuit Safe Operating Area For motor driving, if the load is short-circuited due to
human fault then the flow of the abnormally high current would destroy the device,
so the current sensing and the feedback to the control block become the necessity.
Which requires the IGBT should withstand the short- circuit condition for about 3~5s.
ex: If the load is short-circuited when the applied voltage between the C-E is about
300~500V, then the current upto 8-12 times higher than the rated current will flow
which would destroy the device within 20~30s. Thus the protective circuit is
designed to be about 10s with the consideration
of the feedback delay time.
57/45

Thermal Resistance
Descriptions

Symbol
RJ-C(I)

Thermal resistance between IGBT's junction to case

RJ-C(F)

Thermal resistance between FRD's junction to case

RC-S

Thermal resistance between the case of IGBT to the heat sink

Electerical Characteristics
Symbol
BVCES

VGE(th)

ICES

IGES

Descriptions

Collector-Emitter Breakdown Voltage (Gate-Emitter is short-circuited)

The breakdown voltage between C-E when the gate and the emitter is short-circuited and the rated
(ex: IC=10mA) is applied to the collector. Normally the minimum value (ex: 600V) is defined.
Gate Threshold Voltage
The voltage between Gate-Emitter at the rated voltage between C-E and for the rated current IC(ex:
The minimum and the maximum value is given.
Collector Cutof Current
The maximum collector current when the gate and the emitter is short-circuited and
the rated voltage is applied to the collector.
Gate - Emitter Leakage Current
The maximum gate current when the collector and the emitter is short-circuited and
the rated voltage is applied between the gate-emitter.
58/45

Symbol

Descriptions

VCE(sat) Collector - Emitter Saturation Voltage

The saturation voltage between the collector and the emitter when the rated current is
applied to the collector and the rate voltage is applied between the gate and the emitter.
Total Gate Charge
Qg
The amount of the gate electric charge needed for the IGBT to be completely On.
The amount of the driving current needed can be decided.
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Capacitance
Cres
Turn on Delay Time
Td
The time for the output to reach the 10% of the maximum of the output current
waveform after the pulse is applied to the gate.
Turn on Rise Time
Tr
The time to reach from 10% to 90% of the output current waveform.
Turn on Time
Ton
The time for the output to reach the 90% of the maximum of the output current
waveform after the pulse is applied to the gate.
Turn of Falling Time
Tf
The time to reach from 10% to 90% of the output current waveform.
Turn of Time
Tof
The time for the output to reach the 10% of the maximum of the output current
waveform after the pulse is removed from the gate.

59/45

IGBT Operation Area

HIGH VOLTAGE
HIGH CURRENT

25 KW

10

GTO

POWER

HIGH FREQUENCY
1

IGBT
BJT
MOSFET

0.1
1

70
FREQUENCY

1000KHZ
60/45

Power Loss
= Switching Loss + Conduction Loss
Switching Loss = Turn On Loss + Turn Off Loss

Vce

Ic

Vce(sat)

Off Time

Turn On
Time

On Time

Leakage Current

Turn Off
Time

Off Time

Conduction Loss
Turn On
Loss

Turn Off
Loss

61/45

Question : Whats Turn off Energy (Eoff) ?

Answer :
* Turn off Energy (Eoff) offers useful tips to designers ; how much switching-losses device generates
and how to design the thermal management.
* Switching loss can be easily expected in systems by multiplying Eoff specified in datasheets and
switching frequency of systems
* Eoff can provide more valuable information to designer than the turn-off falling time, tf.
Ic

Vce

Turn off Waveform

Turn off Power

(P=V*I)

S/W Loss=on loss+off loss

=(Eon+Eoff) * f

Turn off Energy

(E= P(t) )
62/45