You are on page 1of 55

UniS

Thick-Film Multilayer Microwave


Circuits for Wireless Applications
Charles Free
Advanced Technology Institute
University of Surrey, UK
and
Zhengrong Tian
Formely with Middlesex University

Now with NPL

UniS

UniS
University of Surrey
Located in Guildford 30km south of London
Approx. 5000 students
Single campus - lot of student accommodation on-site
Technological university
Research-led university

Top of UK research ratings in Electronic Engineering


UniS

UniS
School of Electronics: Research Groups
Surrey Space Centre
Small satellites: design + construction + control

Advanced Technology Institute


Semiconductors + ion beam applications + microwave systems

Centre for Communication Systems Research


Mobile + satellite communications

Centre for Vision, Speech and Signal Processing

Medical + Multimedia + Robotics

UniS

UniS

Advanced Technology Institute

Microwave Systems:
- MMIC design
- RF and Microwave MCMs
- Microwave circuits and antennas
- thick-film (including photoimageable) processing
- access to clean rooms (class 1000 and class 100)

- measurement capability to 220GHz


UniS

UniS

Thick-Film Multilayer
Microwave Circuits
for Wireless Applications

UniS

UniS
CONTENTS

UniS

Introduction
Thick-film technology
Significance of line losses
Single layer microwave circuits
Multilayer microwave circuits
Summary
3

UniS

INTRODUCTON

UniS

UniS
Typical frequencies for wireless applications:
Current mobile: 0.9GHz - 2GHz
3G systems: 2.5GHz
Bluetooth: 2.5GHz
GPS: 12.6GHz
LMDS: 24GHz and 40GHz

Automotive: 77GHz
UniS

UniS
Driving forces created by the wireless market:
lower cost
higher performance
greater functionality

increased packing density

UniS

UniS

Microstrip: basic microwave interconnection


structure
UniS

UniS

Summary of key material requirements at RF:

Conductors:- low bulk resistivity


- good surface finish (low surface roughness)
- high line/space resolution
- good temperature stability
Dielectrics: - low loss tangent (<10-2)
- good surface finish
- precisely defined r (stable with frequency)
- isotropic r
- consistent substrate thickness
- low Tf (< 50 ppm/oC)
28
UniS

UniS

RF Transceiver Architecture
UniS

UniS

Features of an RF MCM
UniS

UniS

THICK-FILM TECHNOLOGY

UniS

UniS

Thick-Film Technology

Advantages:
Low Cost
Feasibility for mass production
Adequate quality at microwave frequencies
Potential for multi-layer circuit structures
Difficulty:
Fabrication of fine line and gaps: limited

quality by direct screen printing


UniS

UniS
Standard range of materials is used:

CONDUCTORS: - gold
- silver
- copper
DIELECTRICS: - ceramic (alumina)
- green tape (LTCC)
- thick-film pastes
- laminates
Plus photoimageable conductors and dielectrics
UniS

23

UniS
Fine lines < 25 micron with 1 micron
precision
High density, 4 micron thick conductor
High conductivity - 95% of bulk

96% Al

50m lines

UniS

Photodefined conductors

UniS

MICROSTRIP RESONANT RING


TEST STRUCTURE

r2

r1
S

UniS

UniS

Microstrip Resonant Ring


can be used to measure total line loss and vp
(measure Q loss, measure fo vp )
does not separate conductor and dielectric loss
ring is loaded by input and output ports - source
of measurement error
UniS

UniS

Meander-line test structure


can be used to measure total line loss and vp
(measure Q loss, measure fo vp )
does not separate conductor and dielectric loss
ring is loaded by input and output ports - source
of measurement error
UniS

UniS

Chamfering of the corners is a necessary


precaution in microstrip to avoid reflections
UniS

UniS
0.04

0.035

Line Loss (dB/m m )

0.03

0.025

0.02

0.015

0.01

0.005

0
0

10

15

20

25

30

35

40

45

Frequency (GHz)
measured

simulated

Comparison of measured and simulated loss in a 50 line


fabricated on 99.6% alumina.
[substrate thickness = 254m and line width = 255m]
UniS

UniS

0.3

Line Loss (dB/wavelength)

0.25

0.2

0.15

0.1

0.05

0
4

12

16

20

24

28

32

36

40

44

Frequency (GHz)

Measured line loss: 50 thick-film microstrip line


UniS

UniS
0.04

III

0.035

Line Loss (dB/m m )

0.03
0.025

II

0.02
0.015

0.01
0.005
0
4

12

16

20

24

28

32

36

40

44

Frequency (GHz)

Typical microstrip line losses


UniS

29

UniS

Skin effect: at RF and microwave frequencies current


tends to flow only in the surface of a conductor
Skin depth (): depth of penetration at which the magnitude
of the current has decreased to 1/e of the surface value

1
f

Significance: surface of conductors must be smooth


and the edges well defined to minimise losses

UniS

27

UniS
0.045

RGH=0.5

0.04

Line loss (dB/mm)

0.035
0.03

RGH=0.2

0.025

RGH=0.1
RGH=0

0.02
0.015
0.01
0.005
0
0

10

20

30

40

50

Frequency (GHz)

Effect of surface roughness on the loss


in a microstrip line
UniS

30

UniS

0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0

Tand=0.001
Tand=0.005

10

Tand=0.003
Tand=0.0001

20

30

40

Frequency (GHz)

Effect of loss tangent on line loss


UniS

31

UniS
100%
80%
Line
Loss
(%)

60%
40%
20%
0%

20

32

44

Frequency (GHz)

Bulk Conductor Loss

UniS

Loss due to Surface Roughness

Dielectric Loss

32

UniS
100%
90%
80%
70%
Line
Loss
(%)

60%
50%
40%
30%
20%
10%
0%
Al
LTCC
Different Material (evaluated at 2GHz)

Bulk Conductor Loss

UniS

Loss due to Surface Roughness

Dielectric Loss

33

UniS

LTCC TECHNOLOGY

LTCC technology is a well-established technology


Reliability established in the automotive market

Advantages for high frequency applications:

UniS

parallel processing ( high yield, fast turnaround,


reduced cost)
precisely defined parameters
high performance conductors
potential for multi-layer structures
high interconnect density

UniS
LTCC TECHNOLOGY

Microwave applications:
LTCC can meet the physical and electrical
performance demanded at frequencies above
1GHz
Increases in material and circuit production
are reflected in lower costs: LTCC is now
comparable to FR4
Significant space savings when compared to
other technologies, such as FR4
UniS

UniS

SIGNIFICANCE OF LINE LOSSES

UniS

UniS

MICROWAVE RECEIVER

Feeder

BPF1

LNA

BPF2

Mixe
r

Schematic of front-end of a microwave receiver

UniS

UniS

RECEIVER NOISE PERFORMANCE


Feede
r

BPF1

LNA

BPF
2

Mixer

System noise temperature


(Tsys)

Tpa
TBPF 1
TBPF 2
Tm
Tsys T feeder

........
G feeder G feederGBPF 1 G feederG paGBPF 2 G feederGBPF 1G paGBPF 2

UniS

UniS

RECEIVER NOISE PERFORMANCE

Tsys T feeder

T pa
TBPF 1
TBPF 2
Tm

........
G feeder
G feeder GBPF 1 G feeder G pa GBPF 2 G feeder GBPF 1G pa GBPF 2

Significance of expression for Tsys:

noise performance dominated by first


stage

a lossy first stage introduces noise:

Tfeeder = (L -1) 290

a lossy first stage magnified noise from


UniS

UniS
Dielectric Properties @ 9GHz
Material

99.5% AL 9.98

UniS

Tan x 10-3
0.1

LTCC1

7.33

3.0

LTCC2

6.27

0.4

LTCC3

7.2

0.6

LTCC4

7.44

1.2

Published6.84
material data
1.3

LTCC5

UniS

CALCULATED RESULTS
Feede
r

LNA

BPF1

Noise figure variation


BPF
2

Mixer

12
10
8
6
4
2

tand=0.005

tand=0.001

tand=0.0001

UniS

UniS

SINGLE-LAYER MICROWAVE
CIRCUITS

UniS

UniS
Single-layer microstrip circuits:
all conductors in a single layer
coupling between conductors achieved through
edge or end proximity (across narrow gaps)

Problem:
difficult to fabricate (cheaply in production) fine

gaps, possibly 10m


UniS

UniS
End-coupled
filter
Directional
coupler

Examples of single-layer microstrip circuits


UniS

UniS
DC break

Edge-coupled
filter

Examples of single-layer microstrip circuits


UniS

UniS

MULTI-LAYER MICROWAVE
CIRCUITS

UniS

UniS

Multilayer microwave circuits:


conductors stacked on different layers
conductors separated by dielectric layers
allows for (strong) broadside coupling
eliminated need for fine gaps
registration between layers not as difficult to
achieve as narrow gaps

technique well-suited to thick-film print technology


also suitable for LTCC technology
UniS

UniS

Direct port 4

3 Isolated port

l
Thick-film dielectric layer

Multilayer
configuration

W2

h1

Main substrate

r1
r

S
W1
Ground plane

Input port

2 Coupled port

UniS

UniS
Thick-film technology is particularly suitable for the
implementation of multilayer circuits:
higher packing density
integration of antenna
close coupling between conductors

Circuit examples:

UniS

DC block

Directional coupler

UniS

Directional Coupler
Multilayer Concept

Single Layer
Structure
UniS

UniS
2dB Directional Coupler - Measured Results
0
-5
-10
-15
-20
-25
-30
-35
0

Frequency (GHz)

UniS

10 11

UniS
3dB Directional Coupler - Measured Results
0
-10
-20
-30
-40
-50

UniS

8 10 12 14
Frequency (GHz)

16

18

20

UniS

/4

Microstrip DC block
UniS

UniS
Multilayer DC block

380um
r = 3.9

Alumina

UniS

180um
300um

UniS
2

VSWR

1.8
1.6
1.4
1.2
1
1

10

11

12

Frequency (GHz)

Measured performance of multilayer DC block


UniS

UniS
Insertion Loss (dB)

1.6
1.2
0.8
0.4
0
1

10

11

12

Frequency (GHz)

Measured performance of multilayer DC block

UniS

UniS

SUMMARY

UniS

UniS
SUMMARY:

Thick-film technology provides a viable fabrication


process for wireless circuits at microwave frequencies

Multilayer microwave circuits can offer enhanced


performance for coupled-line circuits

Photoimageable thick-film materials extend the usable

frequency range to mm-wavelengths

UniS

UniS
C.Free@surrey.ac.uk

www.ee.surrey.ac.uk

www.ee.surrey.ac.uk/ati
UniS

You might also like