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Basics
of
MOSFET
Uni-polar Device
4 terminal device
GATE
SOURCE
MOSFET is symmetrical
device with respect to gate
Nchannel
BODY
DRAIN
Symbol
NMOS
PMOS
Layout Of MOSFET
I=0
Vgs = +ve
Vds = +ve
D
-- -- -- -- -- -- -- -- -- + + +++
+ + +++
Depletion Region
N-channel
Vgs = +ve
Channel is
pinched
Off. point at
which Vgs-Vds
=Vth
What is Pinch-off
Initially we get an increasing
current with increasing drain bias
When we reach VDsat = VG VT,
inversion layer(channel) is disabled at
the drain end (pinch-off)
The charges still flow, just that you
cant draw more current
with higher drain bias, and the
current saturates
Current-Voltage Relations
6
x 10
-4
VGS= 2.5 V
Resistive
4
ID (A)
VGS= 2.0 V
3
VDS = VGS - VT
VGS= 1.5 V
Saturation
VGS= 1.0 V
0
0.5
VDS (V)
1.5
2.5
I Q
I/V Characteristics
Qd is charge density of
channel and v is velocity of
electrons
I Qdv
Qd WCox[VGS V ( x) VTH ]
I WCox[VGS V ( x) VTH ]v
-Ve sign is inserted because
channel charge carrier is electrons
dV ( x)
v E n
dx
dV ( x)
I WCox[VGS V ( x) VTH ]n
dx
I/V Characteristics
dV ( x)
I WCox[VGS V ( x) VTH ]n
dx
Now, at x=0 voltage at source end is
Vgs-Vth so V(x) = 0 and at X=L
voltage at drain end is
Vgs-Vds-Vth so V(x)= Vds.
VDS
Idx W C
n
ox
W
1
I nCox[(VGS VTH )VDS VDS 2 ]
L
2
1W
ID max
nCox (VGS VTH ) 2
2 L
MOSFET as Resistor
For very small value of Vds<<Vgs-Vth we can assume that IV characteristics is linear and MOSFET can work as Resistor
in deep Triode Region
W
1
I nCox[(VGS VTH )VDS VDS 2 ] ID W nCox[(VGS VTH )VDS ]
L
2
L
RON
VDS
1
Example 1
For the arrangement shown in the figure below, plot the
on resistance of M1 as a function of VG. Assume the
following parameters.
W
nCox 50 A 2 ,
10 and VTH 0.7V
V
L
First find out wether transistor is in deep triode .
1
1
RON
M
6
W
nCox (VGS VTH ) 10 50 10 (VG 1 0.7) 5(VG 1.7)
L
Example 1 Contnd
RON
VG
W
1
ID nCox[(VGS VTH )VDS VDS 2 ]
L
2
equation if we replace Vds by Vgs-Vth we will get current when transistor is ope
turation .
1W
ID
nCox (VGS VTH ) 2
2 L
Summary of I/V
Characteristics
NMOS Transistor
PMOS Transistor
Vgs
Vgs<Vth
Vgs
VgsVth
Cut-off ID=0
VgsVth
Cut-off ID=0
Vds<Vgs-Vth
VdsVgs-Vth
Vds Vgs-Vth
Saturation
ID
ID
Vgs>Vth
Triode
W
1
nCox[(VGS VTH )VDS VDS 2 ]
L
2
1W
nCox (VGS VTH ) 2
2 L
Saturation
ID
1W
nCox(VGS VTH ) 2
2 L
Triode
W
1
ID nCox[(VGS VTH )VDS VDS
L
2
1
W
ID ( sat )
nCox (VGS VTH ) 2
2 L(1 VDS )
1W
ID ( sat )
nCox (VGS VTH ) 2 (1 VDS )
2 L
ID ( sat ) ID (1 VDS )
L
VDS
L
L
VDS
L
For
PMOS
For
NMOS
MOSFET as a Switch
Example of MOSFET as a
Switch
The input is grounded ( 0v )
Gate-source voltage less than
threshold voltageVGS<VTH
MOSFET is fully-OFF (Cut-off
region )
No Drain current flows
(ID=0)
VOUT=VDS=VDD=1
MOSFET operates as an open
switch
Example of MOSFET as a
Switch
x 10
Req (Ohm)
5
4
3
2
1
0
0.5
1.5
VDD (V)
2.5