Professional Documents
Culture Documents
David R. Jackson
Dept. of ECE
University of Houston
Contact Information
David R. Jackson
Dept. of ECE
N308 Engineering Building 1
University of Houston
Houston, TX 77204-4005
Phone: 713-743-4426
Fax: 713-743-4444
Email: djackson@uh.edu
Additional Resources
Some basic references are provided at the end of these viewgraphs.
You are welcome to visit a website that goes along with a course at the
University of Houston on microstrip antennas (PowerPoint viewgraphs
from the course may be found there, along with the viewgraphs from this
short course).
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
5
Notation
c speed of light in free space
0 c / f
k0 0 0 2 / 0
k1 k0 r
k1 wavenumber of substrate
eff
rc
0
376.7303
0
1 0 / r
1
0 0
0 4 107 H/m
0
1
8.854188 1012 F/m
2
0c
6
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
Coax feed
8
Rectangular
Square
Elliptical
Circular
Annular ring
Triangular
11
Applications include:
Satellite communications
Microwave communications
Cell phone antennas
GPS antennas
13
Filter
DC supply Micro-D
connector
K-connector
LNA
PD
Fiber input with
collimating lens
Diplexer
Microstrip Antenna Integrated into a System: HIC Antenna Base-Station for 28-43 GHz
(Photo courtesy of Dr. Rodney B. Waterhouse)
14
15
Js
W
h
a
h
The location of the feed determines the direction of current flow and hence
the polarization of the radiated field.
18
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
19
Feeding Methods
20
Feeding Methods
z
Coaxial Feed
y
Surface current
W
Feed at (x0, y0)
x
21
Feeding Methods
Coaxial Feed
x0
R Redge cos
Advantages:
Simple
Directly compatible with coaxial cables
Easy to obtain input match by adjusting feed position
W
Disadvantages:
Significant probe (feed) radiation for thicker substrates
Significant probe inductance for thicker substrates (limits
bandwidth)
Not easily compatible with arrays
x0 , y0
22
Feeding Methods
Inset Feed
Advantages:
Simple
Allows for planar feeding
Easy to use with arrays
Easy to obtain input match
Microstrip line
Disadvantages:
Significant line radiation for thicker substrates
For deep notches, patch current and radiation pattern may show distortion
23
Feeding Methods
Inset Feed
Recent work has shown
that the resonant input
resistance varies as
Wf
2 x0
Rin A cos 2
B
2 L
x0
S
L
The coefficients A and B depend on the notch width S but (to a good
approximation) not on the line width Wf .
Y. Hu, D. R. Jackson, J. T. Williams, and S. A. Long, Characterization of the Input Impedance of
the Inset-Fed Rectangular Microstrip Antenna, IEEE Trans. Antennas and Propagation, Vol. 56,
No. 10, pp. 3314-3318, Oct. 2008.
24
Feeding Methods
Proximity-coupled Feed
(Electromagnetically-coupled Feed)
Advantages:
Allows for planar feeding
Less line radiation compared to microstrip feed
Can allow for higher bandwidth (no probe inductance, so
substrate can be thicker)
Patch
Microstrip line
Top view
Microstrip
line
Disadvantages:
Requires multilayer fabrication
Alignment is important for input match
25
Feeding Methods
Gap-coupled Feed
Advantages:
Allows for planar feeding
Can allow for a match even with high edge impedances, where a notch
might be too large (e.g., when using high permittivity)
Gap
Patch
Microstrip line
Patch
Top view
Microstrip
line
Disadvantages:
Requires accurate gap fabrication
Requires full-wave design
26
Feeding Methods
Aperture-coupled Patch (ACP)
Advantages:
Allows for planar feeding
Slot
Disadvantages:
Requires multilayer fabrication
Alignment is important for input match
Top view
Microstrip
line
Patch
Slot
Microstrip line
27
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
28
h
PMC
29
Note: As the substrate thickness gets smaller the patch current radiates less, due to
image cancellation. However, the Q of the resonant mode also increases, making the
patch currents stronger at resonance. These two effects cancel, allowing the patch to
radiate well even for small substrate thicknesses.
1
Js
h
Js
31
E z E z
Et 0
E x, y, z z Ez x, y
Hence
E z x, y
32
1
H
E
j
1
z x, y
zE
j
1
z Ez x, y
33
j
Note: The magnetic field is purely horizontal.
(The mode is TMz.)
E z x, y
H x, y
34
J s n 0
bot
s
n 0
assuming J
bot
s
t
J stop
Also,
J sbot z H
Js
H tbot 0
H tbot 0
35
y
L
H t 0 (PMC)
W
or
Js
n H x, y 0
H
h
Actual patch
edge
t
PMC
h
PMC Model
36
n H x, y 0
1
H x, y
z E z x, y
j
W
Hence,
n z Ez x, y 0
z n Ez x, y 0
Ez
0
n
Js
n z Ez x, y z n E z x, y Ez x, y n z
(Neumann B.C.)
h
PMC
37
Ez k Ez 0
2
k k1 k0 r
E z x, y
W
L
Ez cos
PMC
(TMmn mode)
L
m n
We then have
L
W
Hence m n
L W
k Ez 0
2
1
k12 0
38
y
2
m n
k
L
W
E z x, y
2
1
PMC
Recall that
k1 k0 r 0 0 r
L
2 f
Hence
c
2 r
m n
L W
c 1/ 0 0
39
Ez x, y
f f mn
PMC
f mn
c
2 r
m n
L
W
40
Current
c 1
f10
2 r L
x
Ez cos
H x, y y
J s x
x
sin
L
L
W
x
L
The resonant length L is about 0.5 guided
wavelengths in the x direction.
x
sin
L
L
41
2
1
m n
L W
(1,0) mode:
k1 L
0 / 2
L d / 2
r
Le L 2L
c 1
f10
2 r Le
L
L
x
Le
43
W
eff
0.3
0.264
h
r
L / h 0.412
eff 0.258 W 0.8
h
r
reff
r 1
2
r 1
h
1
12
1/ 2
c
1
f10
L
2 r
44
Note:
L 0.5 h
45
Hammerstad
Measured
0.95
0.9
0.85
0.8
0.75
0.01
0.02
0.03
0.04
0.05
0.06
0.07
h
0
h //
0
r = 2.2
W/ L = 1.5
fN = f / f0
46
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
47
General Characteristics
Bandwidth
The bandwidth is directly proportional to substrate thickness h.
However, if h is greater than about 0.05 0 , the probe inductance (for a
coaxial feed) becomes large enough so that matching is difficult the
bandwidth will decrease.
The bandwidth is inversely proportional to r (a foam substrate gives a high
bandwidth).
The bandwidth of a rectangular patch is proportional to the patch width W (but
we need to keep W < 2L ; see the next slide).
48
General Characteristics
Width Restriction for a Rectangular Patch
c 1
f 01
2 r W
W 2L
f mn
c
2 r
m n
L W
f 02 f 01
c 1
1
r W 2 L
f10
c 1
2 r L
f 02
c 2
2 r W
fc
f01
f10
f02
W = 1.5 L is typical.
L
49
General Characteristics
Some Bandwidth Observations
For a typical substrate thickness (h /0 = 0.02), and a typical substrate
permittivity (r = 2.2) the bandwidth is about 3%.
By using a thick foam substrate, bandwidth of about 10% can be achieved.
By using special feeding techniques (aperture coupling) and stacked
patches, bandwidths of 100% have been achieved.
50
General Characteristics
Results: Bandwidth
30
25
r r=10.8
10.8
20
15
10
2.2
2.2
5
0
0.1
hh/ /
0
The discrete data points are measured values.
The solid curves are from a CAD formula (given later).
W/ L = 1.5
r = 2.2 or 10.8
51
General Characteristics
Resonant Input Resistance
The resonant input resistance is fairly independent of the substrate
thickness h unless h gets small (the variation is then mainly due to
dielectric and conductor loss).
The resonant input resistance is proportional to r.
The resonant input resistance is directly controlled by the location of the
feed point (maximum at edges x = 0 or x = L, zero at center of patch).
(x0, y0)
W
L
L
x
52
General Characteristics
Resonant Input Resistance (cont.)
The patch is usually fed along the centerline (y0 = W / 2)
to maintain symmetry and thus minimize excitation of undesirable modes
(which cause cross-pol).
W
x
L
53
General Characteristics
Resonant Input Resistance (cont.)
For a given mode, it can be shown that the resonant input resistance is
proportional to the square of the cavity-mode field at the feed point.
This is seen from the cavity-model eigenfunction analysis
(please see the Appendix).
Rin E
2
z
x0 , y0
x0
Rin cos
(x0, y0)
W
54
General Characteristics
Resonant Input Resistance (cont.)
y
Hence, for (1,0) mode:
x0
Rin Redge cos
(x0, y0)
W
L
55
General Characteristics
Results: Resonant Input Resistance
200
The discrete data points are from a CAD
formula (given later.)
150
r r=10.8
10.8
y0 = W/2
x0 = L/4
100
2.2
2.2
(x0, y0)
50
W
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
hh //
0
r = 2.2 or 10.8
0.08
W/L = 1.5
56
General Characteristics
Radiation Efficiency
Radiation efficiency is the ratio of power radiated into
space, to the total input power.
Pr
er
Ptot
The radiation efficiency is less than 100% due to
Conductor loss
Dielectric loss
Surface-wave excitation
57
General Characteristics
Radiation Efficiency (cont.)
y
TM0
surface wave
Js
x
cos () pattern
58
General Characteristics
Radiation Efficiency (cont.)
Hence,
Pr
Pr
er
Ptot Pr Pc Pd Psw
Pr = radiated power
General Characteristics
Radiation Efficiency (cont.)
Some observations:
Conductor and dielectric loss is more important for thinner substrates (the
Q of the cavity is higher, and thus more seriously affected by loss).
Conductor loss increases with frequency (proportional to f 1/2) due to the
skin effect. It can be very serious at millimeter-wave frequencies.
Conductor loss is usually more important than dielectric loss for typical
substrate thicknesses and loss tangents.
Rs
0
Rs
f
60
General Characteristics
Radiation Efficiency (cont.)
Surface-wave power is more important for thicker substrates or for
higher-substrate permittivities. (The surface-wave power can be
minimized by using a thin substrate or a foam substrate.)
For a foam substrate, a high radiation efficiency is obtained by making the
substrate thicker (minimizing the conductor and dielectric losses). There is no
surface-wave power to worry about.
For a typical substrate such as r = 2.2, the radiation efficiency is maximum for
h / 0 0.02.
61
General Characteristics
Results: Efficiency (Conductor and dielectric losses are neglected.)
100
2.2
2.2
80
60
r10.8
10.8
40
exact
CAD
20
0
0.1
h
h // 0
r = 2.2 or 10.8
W/L = 1.5 Note: CAD plot uses Pozar formula (given later).
62
General Characteristics
Results: Efficiency (All losses are accounted for.)
100
2.2
2.2
80
exact
60
CAD
rr = 10.8
10.8
40
tan 0.001
20
0
r = 2.2 or 10.8
0.02
0.04
0.06
hh // 00
0.08
0.1
W/L = 1.5 Note: CAD plot uses Pozar formula (given later).
63
General Characteristics
Radiation Pattern
y
E-plane: co-pol is E
H-plane: co-pol is E
Js
E plane
Probe
H plane
64
General Characteristics
Radiation Patterns (cont.)
Comments on radiation patterns:
The E-plane pattern is typically broader than the H-plane pattern.
The truncation of the ground plane will cause edge diffraction, which
tends to degrade the pattern by introducing:
Rippling in the forward direction
Back-radiation
Pattern distortion is more severe in the E-plane, due to the angle dependence
of the vertical polarization E on the ground plane.
(It varies as cos ()).
65
General Characteristics
Radiation Patterns
Edge diffraction is the most serious in the E plane.
E varies as cos
y
Space wave
L
Js
E plane
H plane
66
General Characteristics
Radiation Patterns
E-plane pattern
Red: infinite substrate and ground plane
Blue: 1 meter ground plane
0
30
-30
-10
60
-60
-20
-30
-40
90
-30
-20
120
-10
-90
240
150
210
180
67
General Characteristics
Radiation Patterns
H-plane pattern
Red: infinite substrate and ground plane
Blue: 1 meter ground plane
0
45
-10
-45
-20
-30
-40
90
135
-30
-20
-10
-90
225
180
68
General Characteristics
Directivity
The directivity is fairly insensitive to the substrate thickness.
The directivity is higher for lower permittivity, because the patch is
larger.
69
General Characteristics
Results: Directivity (relative to isotropic)
10
r r=2.2
2.2
10.8
10.8
6
4
exact
CAD
2
0
0.1
hh//0
r = 2.2 or 10.8
W/ L = 1.5
70
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
71
CAD Formulas
CAD formulas for the important properties of the
rectangular microstrip antenna will be shown.
Radiation efficiency
Bandwidth (Q)
Resonant input resistance
Directivity
D. R. Jackson, Microstrip Antennas, Chapter 7 of Antenna Engineering Handbook, J. L.
Volakis, Editor, McGraw Hill, 2007.
D. R. Jackson, S. A. Long, J. T. Williams, and V. B. Davis, Computer-Aided Design of
Rectangular Microstrip Antennas, Ch. 5 of Advances in Microstrip and Printed Antennas,
K. F. Lee and W. Chen, Eds., John Wiley, 1997.
D. R. Jackson and N. G. Alexopoulos, Simple Approximate Formulas for Input
Resistance, Bandwidth, and Efficiency of a Resonant Rectangular Patch, IEEE
Trans. Antennas and Propagation, Vol. 39, pp. 407-410, March 1991.
72
CAD Formulas
Radiation Efficiency
er
1 e
hed
r
where
l d
erhed
Rsave
1 3 r
0 h / 0 16 p c1
h / 0
CAD Formulas
Radiation Efficiency (cont.)
erhed
Psphed
Psphed Pswhed
where
hed
sp
P
hed
sw
1
Pswhed
1 hed
Psp
1
2
2 k0 h 80 2c1
0
1
1
3
2 k0 h 60 1
0
r
CAD Formulas
Radiation Efficiency (cont.)
Hence, we have
hed
r
1
1
1
3
1 k0 h 1
4
c1
r
75
CAD Formulas
Radiation Efficiency (cont.)
The constants are defined as
1
2/5
c1 1
2
r
r
a2
2
4
2
3
1
p 1 k0 W a22 2a4
k
W
c
k
L
2
0
0
10
560
5
2
2
1
a2 c2 k0 W k0 L
70
c2 0.0914153
a2 0.16605
a4 0.00761
76
CAD Formulas
Improved formula for HED surface-wave power (due to Pozar)
hed
sw
r x 1
k
8 r 1 x1 ( k0 h) x02 1 1 r2 x1
2
0
2
0 0
x02 1
x1
r x02
0 s tan k0 h s
x0 1
3/2
r2 01 r r2 2 01 02
r2 12
k0 h s
1
1 tan k0 h s
2
s
cos k0 h s
s r 1
D. M. Pozar, Rigorous Closed-Form Expressions for the Surface-Wave Loss of Printed
Antennas, Electronics Letters, vol. 26, pp. 954-956, June 1990.
Note: The above formula for the surface-wave power is different from that given in Pozars paper by
a factor of 2, since Pozar used RMS instead of peak values.
77
CAD Formulas
Bandwidth
1
BW
2
Rsave
1
1
16 p c1 h W
l d
hed
0 h / 0 3 r 0 L er
1
Q
2 BW
f 2 f1
BW
f0
CAD Formulas
Quality Factor Q
Us
Q 0
P
1
P
Q 0U s
P Pd Pc Psp Psw
1
1
1
1
1
Q Qd Qc Qsp Qsw
79
CAD Formulas
Q Components
Qd 1 / tan
Qc 0
2
(k0 h)
ave
Rs
3 r L 1
Qsp
16 pc1 W h / 0
erhed
Qsw Qsp
hed
1
erhed
1
1
1
3
1 k0 h 1
4
c1
r
80
CAD Formulas
Resonant Input Resistance
Probe-feed Patch
R R
max
in
Redge
x0
Redge cos
40
Rs
1
l d
h /
16
h
0
p c1
W
1
h
hed
L
0 er
CAD Formulas
Directivity
3
D
pc1
2
r tan k1h
2
tanc
k1h
k1 k0 r
where
tanc x tan x / x
CAD Formulas
Directivity (cont.)
For thin substrates:
3
D
p c1
(The directivity is essentially independent of the substrate thickness.)
83
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
84
Radiation Pattern
There are two models often used for calculating the radiation pattern:
Electric current model
Magnetic current model
z
Patch
Probe
Coax feed
85
Radiation Pattern
Electric current model:
We keep the physical currents flowing on the patch (and feed).
Patch
Probe
Coax feed
bot
J spatch J top
J
s
s
J spatch
J sprobe
86
Radiation Pattern
Magnetic current model:
We apply the equivalence principle and invoke the (approximate) PMC condition
at the edges.
Equivalence surface
J se
n H
Patch
Probe
M se n E
Coax feed
The equivalent
surface current is
approximately zero
on the top surface
(weak fields) and
the sides (PMC).
We can ignore it on
the ground plane (it
does not radiate).
M se
M se
M se n E
87
Radiation Pattern
Theorem
The electric and magnetic models yield identical patterns
at the resonance frequency of the cavity mode.
Assumption:
The electric and magnetic current models are based on the fields of a single cavity mode, corresponding to an ideal cavity with PMC walls.
D. R. Jackson and J. T. Williams, A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches, Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol.
1, no. 2, pp. 236-248, April 1991.
88
Radiation Pattern
Comments on the Substrate Effects
The substrate can be neglected to simplify the far-field calculation.
When considering the substrate, it is most convenient to assume an infinite
substrate (in order to obtain a closed-form solution).
Reciprocity can be used to calculate the far-field pattern of electric or
magnetic current sources inside of an infinite layered structure.
When an infinite substrate is assumed, the far-field pattern always goes to
zero at the horizon.
D. R. Jackson and J. T. Williams, A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches, Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol. 1,
no. 2, pp. 236-248, April 1991.
89
Radiation Pattern
Comments on the Two Models
For the rectangular patch, the electric current model is the simplest since
there is only one electric surface current (as opposed to four edges).
For the rectangular patch, the magnetic current model allows us to classify
the radiating and nonradiating edges.
For the circular patch, the magnetic current model is the simplest since there
is only one edge (but the electric surface current is described by Bessel
functions).
x
J s x A10 cos
y
x
Radiating edges
Js
Ez sin
M se n E
M se
Nonradiating edges
90
Radiation Pattern
Rectangular Patch Pattern Formula
(The formula is based on the electric current model.)
(1,0) mode
J s = x cos
y
x
E-plane
L
91
Radiation Pattern
The far-field pattern can be determined by reciprocity.
Ei (r , , ) E
hex
i
WL
r , ,
k y W
sin
2
ky W
k x L
cos
2
2
2
k x L
2
2
i or
k x k0 sin cos
k y k0 sin sin
The hex pattern is for a
horizontal electric dipole in the x direction,
sitting on top of the substrate.
Js
x
L
D. R. Jackson and J. T. Williams, A Comparison of CAD Models for Radiation from Rectangular
Microstrip Patches, Intl. Journal of Microwave and Millimeter-Wave Computer Aided Design, vol. 1,
no. 2, pp. 236-248, April 1991.
92
Radiation Pattern
Ehex r , , E0 sin F
Ehex r , , E0 cos G
where
j 0 jk0 r
e
4 r
E0
F 1
TE
2 tan k0 h N
tan k0 h N j N sec
G cos 1 TM
N r sin 2
2 tan k0 h N cos
r
tan k0 h N j
cos
N
Note: To account for lossy substrate, use
r rc r 1 j tan
93
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
94
Input Impedance
Various models have been proposed over the years for calculating the
input impedance of a microstrip patch antenna.
Transmission line model
The first model introduced
Very simple
Spectral-domain method
More challenging to implement
Accounts rigorously for both radiation and surface-wave excitation
Commercial software
Very accurate
Can be time consuming
95
Input Impedance
Comparison of the Three Simplest Models
Circuit model of patch
r 2.2
tan 0.001
h 1.524 mm
L 6.255 cm
x0 6.255 cm
W / L 1.5
y0 0
a 0.635mm
Input Impedance
CAD Circuit Model for Input Impedance
The circuit model discussed assumes a probe feed.
Other circuit models exist for other types of feeds.
Note: The mathematical justification of the CAD circuit model comes
from the cavity-model eigenfunction analysis (see Appendix).
97
Input Impedance
Probe-fed Patch
Near the resonance frequency, the patch cavity can be approximately modeled
as a resonant RLC circuit.
The resistance R accounts for radiation and losses.
A probe inductance Lp is added in series, to account for the probe inductance
of a probe feed.
Patch cavity
Probe
Zin
Lp
L
R
98
Input Impedance
Z in j Lp
1 jQ
R
Q
0 L
1
BW
2Q
R
f
f 0
f0 f
0 2 f 0
Zin
Lp
1
LC
L
R
Z in Rin jX in
99
Input Impedance
Rin
f
f 0
1 Q
f0 f
Rinmax Rin
f f0
f f0
Lp
max
in
L
R
f f0
100
Input Impedance
Z in j Lp
1 jQ
R
f
f 0
f0 f
0
CAD formulas
for the first three R: the input resistance at the cavity resonance frequency f
0
parameters
have been given Q: the quality factor of the patch cavity
earlier.
Lp
(R, f0, Q)
L
Zin
101
Input Impedance
Results: Input Resistance vs. Frequency
Note: exact means the cavity model will all infinite modes.
80
Rectangular patch
70
60
CAD
exact
50
40
Frequency where
the input resistance
is maximum (f0):
Rin = R
30
20
10
0
r = 2.2
4.5
5
FREQUENCY (GHz)
W/L = 1.5
5.5
L = 3.0 cm
102
Input Impedance
Results: Input Reactance vs. Frequency
Frequency80
where the input
Note: exact means the cavity model will all infinite modes.
Rectangular patch
60
CAD
exact
40
20
Xp
-20
-40
r = 2.2
4.5
5
FREQUENCY (GHz)
W/L = 1.5
5.5
L = 3.0 cm
103
Input Impedance
Approximate CAD formula for probe (feed) reactance (in Ohms)
a = probe radius
h = probe height
0
Xp
k0 h ln
2
r k0 a
X p Lp
B 0.577216
2a
(Eulers constant)
0 0 / 0 376.7303
104
Input Impedance
Feed (probe) reactance increases proportionally with substrate
thickness h.
Feed reactance increases for smaller probe radius.
0
Xp
k0 h ln
2
r k0 a
Important point:
If the substrate gets too thick, the probe reactance will make it difficult
to get an input match, and the bandwidth will suffer.
(Compensating techniques will be discussed later.)
105
Input Impedance
Results: Probe Reactance (Xf =Xp= Lp)
40
35
CAD
exact
30
Rectangular patch
r = 2.2
25
20
W/L = 1.5
15
(x0, y0)
Note: exact means the cavity model with all infinite modes.
10
5
0
L
0
0.1
0.2
Center
xr = 2 ( x0 / L) - 1
0.3
0.4
0.5
Xxr
r
0.6
0.7
L
0.8
h = 0.0254 0
0.9
a = 0.5 mm
1
Edge
Design Example
Design a probe-fed rectangular patch antenna on a substrate having a relative permittivity of 2.33
and a thickness of 62 mils (0.1575 cm). (Rogers RT Duroid 5870). Choose an aspect ratio of W / L =
1.5. The patch should resonate at the operating frequency of 1.575 GHz (the GPS L1 frequency).
Ignore the probe inductance in your design, but account for fringing at the patch edges when you
determine the dimensions. At the operating frequency the input impedance should be 50 (ignoring
the probe inductance). Assume an SMA connector is used to feed the patch along the centerline (at
y = W / 2), and that the inner conductor of the SMA connector has a radius of 0.635 mm. The copper
patch and ground plane have a conductivity of = 3.0 107 S/m and the dielectric substrate has a
loss tangent of tan = 0.001.
1) Calculate the following:
The final patch dimensions L and W (in cm)
The feed location x0 (distance of the feed from the closest patch edge, in cm)
The bandwidth of the antenna (SWR < 2 definition, expressed in percent)
The radiation efficiency of the antenna (accounting for conductor, dielectric, and surfacewave loss, and expressed in percent)
The probe reactance Xp at the operating frequency (in )
The expected complex input impedance (in ) at the operating frequency, accounting for
the probe inductance
Directivity
Gain
2) Plot the input impedance vs. frequency.
107
Design Example
y0 = W/2
5) Xp = 11.1
6) Zin = 50.0 + j(11.1)
7) D = 5.85 (7.67 dB)
108
Design Example
Z in jX p
f0 = 1.575 109 Hz
R = 50
Q = 56.8
Xp = 11.1
1 jQ
R
f
f
0
f0 f
60
50.255
50
Rin
40
30
Rin( fghz)
Xin( fghz)
20
Xin
10
0
10
13.937
20
1.5
1.5
1.525
1.55
1.575
fghz
f (GHz)
1.6
1.625
1.65
1.65
109
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
110
Circular Polarization
Three main techniques:
1) Single feed with nearly degenerate eigenmodes (compact but small
CP bandwidth).
2) Dual feed with delay line or 90o hybrid phase shifter (broader CP
bandwidth but uses more space).
3) Synchronous subarray technique (produces high-quality CP due to
cancellation effect, but requires even more space).
111
Circular Polarization
Single Feed Method
(0,1)
(1,0)
L W
L
Basic principle: The two dominant modes (1,0) and (0,1) are
excited with equal amplitude, but with a 45o phase.
112
Circular Polarization
Design equations:
f CP
fx f y
2
BW
1
2Q
(SWR < 2 )
1
f x f CP 1 m
2Q
1
f y f CP 1
2Q
(0,1)
W
(1,0)
x0 y0
Z in Rin Rx Ry
Circular Polarization
Other Variations
Note: Diagonal modes are used as degenerate modes
L
x
L
Patch with slot
x
L
Patch with truncated corners
114
Circular Polarization
Here we compare bandwidths (impedance and axial-ratio):
Linearly-polarized (LP) patch:
LP
SWR
BW
2Q
(SWR 2)
BW
(SWR 2)
CP
BWAR
0.348
Q
AR
2 (3dB)
Circular Polarization
Dual-Feed Method
y
Phase shift realized with delay line:
RHCP
L
P
L
P+g/4
116
Circular Polarization
Phase shift realized with 90o quadrature hybrid (branchline coupler)
RHCP
Z0
Z0 / 2
Z0
Feed
g/4
50 Ohm load
Z0
g/4
x
117
Circular Polarization
Synchronous Rotation
Multiple elements are rotated in space and fed with phase shifts.
-180o
-90o
-270o
0o
Because of symmetry, radiation from higher-order modes (or probes)
tends to be reduced, resulting in good cross-pol.
118
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
119
Circular Patch
y
a
h
120
Circular Patch
Resonance Frequency
From separation of variables:
Ez cos m J m k1
PMC
k1 k0 r
Jm = Bessel function of first kind, order m.
Ez
0
a
J m k1a 0
121
Circular Patch
Resonance Frequency
J m k1a 0
PMC
This gives us
k1a xmn
(nth root of Jm Bessel function)
f mn
c
2 r
xmn
1
0 0
122
Circular Patch
Resonance Frequency
3.832
1.841
3.054
4.201
5.317
5.416
7.016
5.331
6.706
8.015
9.282
10.520
10.173
8.536
9.969
11.346 12.682
13.987
c
f11
x11
2 a r
x11 1.841
123
Circular Patch
Dominant mode: TM11
y
y
a
Circular patch
Square patch
W=L
The circular patch is somewhat similar to a square patch.
124
Circular Patch
Fringing extension
ae a a
c
f11
x11
2 ae r
a + a
Long/Shen Formula:
2h
ae a 1
a r
a
ln
1.7726
2h
PMC
or
h
a
r
a
ln 2h 1.7726
L. C. Shen, S. A. Long, M. Allerding, and M. Walton, "Resonant Frequency of a Circular Disk PrintedCircuit Antenna," IEEE Trans. Antennas and Propagation, vol. 25, pp. 595-596, July 1977.
125
Circular Patch
Patterns
(The patterns are based on the magnetic current model.)
2a
h
H-plane
y
x
E-plane
a
In patch cavity:
J1 k1
Ez , cos
J
k
a
1
1
1
h
axis.
k1 k0 r
126
Circular Patch
Patterns
E0
E r , , 2 a
tanc k z1h cos J1 k0 a sin Q
0
R
J1 k0 a sin
E0
E r , , 2 a
tanc k z1h sin
P
0
k0 a sin
R
where
P cos 1
TE
tanc ( x ) = tan ( x) / x
2 jN
cos
tan k0 hN jN sec
r
2 j
cos
N
TM
Q 1
r
tan k0 h N j
cos
N
Note: To account for lossy substrate, use r r 1 j tan
j 0 jk0 r
e
4 r
E0
N r sin 2
127
Circular Patch
Input Resistance
J12 k1 0
Rin Redge 2
J1 k1a
k1 k0 r
128
Circular Patch
Input Resistance (cont.)
Redge
where
1
er
2 Psp
er = radiation efficiency
/2
2
Psp
k0 a tanc2 k0 hN
80
0
J inc x J1 x / x
Psp = power radiated into space by circular patch with maximum
edge voltage of one volt.
129
Circular Patch
Input Resistance (cont.)
CAD Formula:
Psp
( k0 a ) 2 I c
80
e0 1
e2 0.400000
4
I c pc
3
pc k0 a
k 0
e4 0.0785710
2k
e2 k
e6 7.27509 103
e8 3.81786 104
e10 1.09839 105
e12 1.47731 107
130
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
131
Improving Bandwidth
132
Improving Bandwidth
Probe Compensation
L-shaped probe:
As the substrate
thickness increases the
probe inductance limits
the bandwidth so we
compensate for it.
Top view
133
Improving Bandwidth
SSFIP: Strip Slot Foam Inverted Patch (a version of the ACP).
Bandwidths greater than 25% have been achieved.
Increased bandwidth is due to the thick foam substrate and
also a dual-tuned resonance (patch+slot).
Note: There is no probe inductance to worry about here.
Patch substrate
Patch
Foam
Microstrip
substrate
Microstrip line
Slot
J.-F. Zrcher and F. E. Gardiol, Broadband Patch Antennas, Artech House, Norwood, MA, 1995.
134
Improving Bandwidth
Stacked Patches
Bandwidth increase is due to thick low-permittivity antenna
substrates and a dual or triple-tuned resonance.
Bandwidths of 25% have been achieved using a probe feed.
Bandwidths of 100% have been achieved using an ACP feed.
Patch substrates
Coupling patch
Top Patch
Microstrip
substrate
Microstrip line
Slot
135
Improving Bandwidth
Stacked Patches
0
-5
-10
-15
Measured
Computed
-20
-25
-30
-35
-40
10
11
12
Frequency (GHz)
Improving Bandwidth
Stacked Patches
10
0.5
0.2
180
90
13 GHz
4 GHz
-90
Improving Bandwidth
Parasitic Patches
Radiating Edges Gap Coupled
Microstrip Antennas
(REGCOMA).
Improving Bandwidth
Direct-Coupled Patches
Radiating Edges Direct
Coupled Microstrip Antennas
(REDCOMA).
Non-Radiating Edges Direct
Coupled Microstrip Antennas
(NEDCOMA)
Improving Bandwidth
U-Shaped Slot
Improving Bandwidth
Double U-Slot
141
Improving Bandwidth
E Patch
Multi-Band Antennas
A multi-band antenna is sometimes more desirable than a broadband
antenna, if multiple narrow-band channels are to be covered.
General Principle:
Introduce multiple resonance paths into the antenna.
143
Multi-Band Antennas
Low-band
Low-band
Feed
High-band
Feed
Low-band
High-band
Dual-band E patch
144
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
145
Miniaturization
High Permittivity
Quarter-Wave Patch
PIFA
Capacitive Loading
Slots
Meandering
146
Miniaturization
High Permittivity
r 1
r 4
Size reduction
W W / 2
(Same aspect ratio)
L L / 2
L
The smaller patch has about one-fourth the bandwidth of the original patch.
(Bandwidth is inversely proportional to the permittivity.)
147
Miniaturization
Quarter-Wave patch
Ez = 0
Short-circuit vias
L L / 2
The new patch has about one-half the bandwidth of the original patch.
Neglecting losses:
Us
Q 0
Pr
U s U s / 2
Pr Pr / 4
Q 2Q
Miniaturization
Smaller Quarter-Wave patch
A quarter-wave patch with the same aspect ratio W/L as the original patch
Ez = 0
W W / 2
Short-circuit vias
Width reduction
L L / 2
L L / 2
The new patch has about one-half the bandwidth of the original quarter-wave
patch, and hence one-fourth the bandwidth of the regular patch.
(Bandwidth is proportional to the patch width.)
149
Miniaturization
Quarter-Wave Patch with Fewer Vias
L L / 2
L L
Fewer vias actually gives more miniaturization!
(The edge has a larger inductive impedance: explained on the next slide.)
150
Miniaturization
Quarter-Wave Patch with Fewer Vias
Inductance
Short
Open
The Smith chart provides a simple explanation for the length reduction.
151
Miniaturization
Planar Inverted F (PIFA)
Feed
Shorting strip or via
Top view
Miniaturization
PIFA with Capacitive Loading
Feed
Shorting plate
Top view
The capacitive loading allows for the length of the PIFA to be reduced.
1
LC
153
Miniaturization
Circular Patch Loaded with Vias
Feed
2a
b
Patch
Metal vias
Miniaturization
Circular Patch Loaded with Vias
315
-20
45
-10
270
-40
-30
-20
90
-10
-10
-30
-5
-15
1.5
2.5
Frequency [GHz]
180
135
-20
0.5
225
E-theta
E-phi
Miniaturization
Slotted Patch
Top view
90o
0o
Linear
CP
156
Miniaturization
Meandering
Via
Feed
Feed
Meandered quarter-wave patch
Via
Meandered PIFA
Outline
Overview of microstrip antennas
Feeding methods
Basic principles of operation
General characteristics
CAD Formulas
Radiation pattern
Input Impedance
Circular polarization
Circular patch
Improving bandwidth
Miniaturization
Reducing surface waves and lateral radiation
158
Feed
Ground plane
SIDE VIEW
TOP VIEW
159
160
TM11 mode:
1
Ez , V0
cos J1 k1
hJ1 k1a
M s
k k1 k0 r
At edge:
V0
Ez cos
h
z
M s n E zE
M s Ez a,
M s
V0
cos
h
161
Substrate
M s
M s
V0
cos
h
Surface-Wave Excitation:
ATM 0 AJ1 TM 0 a
Set
(z > h)
J1 TM 0 a 0
162
Substrate
M s
Hence
Patch resonance:
Note:
TM 0 k1
TM 0 a x1n
For TM11 mode:
x11 1.841
TM 0 a 1.841
k1a 1.841
The RSW patch is too big to be resonant.
163
Feed
Ground plane
TOP VIEW
SIDE VIEW
TM 0 b 1.841
The radius a is chosen to make the patch resonant:
J 1 k1a
Y1 k1a
k1 x11
J 1
TM
k1 x11
Y1
TM
164
M s
a
M s
Space-Wave Field:
V0
cos
h
SP
z
1 jk0
ASP cos e
(z = h)
ASP CJ1 k0 a
Set
J1 k0 a 0
k0a 1.841
165
Substrate
TM 0 k0
M s
The same design reduces
both surface-wave fields and
lateral-radiation fields.
Note: The diameter of the RSW antenna is found from
k0 a 1.841
2a
0.586
0
Measurement
Theory (infinite GP)
0
30
-30
30
60
-60
-20
-40
-60
-20
-30
-30
90
-30
-10
-10
60
-30
-20
-10
-90
240
120
150
210
180
Conventional
Conventional
-40
90
-30
-20
120
-10
-90
240
150
210
180
RSW
RSW
167
Space-wave radiation
Lateral radiation
Surface waves
168
S12 [dB]
RSW - Measured
E-plane
-10
RSW - Theory
-20
Conv - Measured
-30
Conv - Theory
-40
1/r
-50
-60
-70
1/r3
-80
-90
-100
0
10
Separation [Wavelengths]
169
References
General references about microstrip antennas:
Microstrip Patch Antennas, K. F. Fong Lee and K. M. Luk, Imperial
College Press, 2011.
Microstrip and Patch Antennas Design, 2nd Ed., R. Bancroft, Scitech
Publishing, 2009.
Microstrip Patch Antennas: A Designers Guide, R. B. Waterhouse,
Kluwer Academic Publishers, 2003.
Microstrip Antenna Design Handbook, R. Garg, P. Bhartia, I. J. Bahl,
and A. Ittipiboon, Editors, Artech House, 2001.
Advances in Microstrip and Printed Antennas, K. F. Lee, Editor, John
Wiley, 1997.
170
References (cont.)
General references about microstrip antennas (cont.):
CAD of Microstrip Antennas for Wireless Applications, R. A. Sainati,
Artech House, 1996.
Microstrip Antennas: The Analysis and Design of Microstrip Antennas
and Arrays, D. M. Pozar and D. H. Schaubert, Editors, Wiley/IEEE
Press, 1995.
Millimeter-Wave Microstrip and Printed Circuit Antennas, P. Bhartia,
Artech House, 1991.
The Handbook of Microstrip Antennas (two volume set), J. R.
James and P. S. Hall, INSPEC, 1989.
Microstrip Antenna Theory and Design, J. R. James, P. S. Hall, and
C. Wood, INSPEC/IEE, 1981.
171
References (cont.)
More information about the CAD formulas presented here
for the rectangular patch may be found in:
172
References (cont.)
References devoted to broadband microstrip antennas:
Compact and Broadband Microstrip Antennas, K.-L. Wong,
John Wiley, 2003.
Broadband Microstrip Antennas, G. Kumar and K. P. Ray,
Artech House, 2002.
Broadband Patch Antennas, J.-F. Zrcher and F. E. Gardiol,
Artech House, 1995.
173
The End
174
Appendix
Transmission line model
175
Input Impedance
Transmission Line Model for Input Impedance
176
Input Impedance
y
Physical patch dimensions (W L)
x0e x0 L
Js
We
PMC
y0e y0 W
( x0e , y0e )
x
Denote
Le
ke k0 rceff
rceff r 1 j leff
leff
1
1
1
1
1
Q Qd Qc Qsp Qsw
rceff
Note:
L is from Hammerstads formula
W is from Wheelers formula
Input Impedance
Commonly used fringing formulas
ln 4
W h
reff 0.300
L 0.412h eff
0.258
r
r 1
reff
r 1
(Wheeler formula)
0.262
h
W
(Hammerstad formula)
0.813
h
1
h
1 12
178
Input Impedance
x0
x Le
x x0e
Z 0effc , kceff
Lp
X p Lp
Z in Z inTL jX p
Zin
where
0
Xp
k0 h ln
2
Y0effc 1 / Z 0effc
h
1 h
Z 0effc ceff
0
We
rceff We
r k0 a
B 0.57722
(Euler's constant )
179
Input Impedance
Cavity Model
Here we use the cavity model to solve for the
input impedance of the rectangular patch antenna.
180
Input Impedance
Physical patch dimensions (W L)
( x0e , y0e )
We
x0e x0 L
PMC
y0e y0 W
x
Le
Denote
rceff
ke k0 rceff
leff
eff
rc
r 1 j leff
Note:
1
1
1
1
Qd Qc Qsp Qsw
Input Impedance
Commonly used fringing formulas
ln 4
W h
reff 0.300
L 0.412h eff
0.258
r
r 1
reff
r 1
(Wheeler formula)
0.262
h
W
(Hammerstad formula)
0.813
h
1
h
1 12
182
Input Impedance
Next, we derive the Helmholtz equation for Ez.
H J i j ceff E
E j H
(Amperes law)
(Faradays law)
E J i j ceff E
j
E j J i ke2 E
E 2 E j J i ke2 E
2 E ke2 E j J i
183
Input Impedance
Hence
2 Ez ke2 Ez j J zi
Denote
( x, y ) E z ( x, y )
Then
2 ke2 f ( x, y )
where
f ( x, y ) j J zi ( x, y )
184
Input Impedance
Introduce eigenfunctions mn (x,y):
mn ( x, y ) mn ( x, y )
2
2
mn
mn
0C
n
For rectangular patch we have, from separation of variables,
m x
n y
mn ( x, y ) cos
cos
L
W
e
e
m 2 n 2
2
mn
Le W
e
185
Input Impedance
Assume an eigenfunction expansion:
( x, y ) Amn mn ( x, y )
m,n
2 ke2 f ( x, y )
2
2
A
k
mn mn e Amn mn f ( x, y)
m,n
m ,n
mn e mn mn ( x, y ) f ( x, y )
m,n
186
Input Impedance
Next, we multiply by
mn ( x, yand
) integrate.
mn
( x, y ) mn ( x, y ) dS 0,
(m, n) ( m, n)
Denote
2
mn , mn mn
( x, y ) dS
S
We then have
2
Amn ke2 mn
mn , mn f , mn
187
Input Impedance
Hence, we have
f , mn
1
Amn
2
2
mn , mn ke mn
J zi , mn
1
Amn j
2
2
mn , mn ke mn
The field inside the patch cavity is then given by
Ez ( x, y ) Amn mn ( x, y )
m ,n
188
Input Impedance
To calculate the input impedance, we first calculate the complex
power going into the patch as
1
Pin E z ( x, y ) J zi*dV
2V
1
h E z ( x, y ) J zi* dS
2 S
1
h Amn mn J zi* dS
2 S m ,n
1
h Amn mn , J zi*
2 m ,n
189
Input Impedance
Hence
1
Pin h Amn mn , J zi*
2 m ,n
mn , J zi
1
1
i*
h j
,
J
2
mn
z
2
2 m ,n
mn , mn ke mn
1
h
2 m ,n
, J i 2
mn
z
j
mn , mn
Also,
1
Pin Z in I in
2
so
Z in
1
2
2
k
mn
e
2 Pin
I in
2
190
Input Impedance
Hence we have
, J i 2
1
mn
z
Z in j h
2
I in m,n mn , mn
where
m,n
m0
1
2
2
ke mn
n0
191
Input Impedance
Rectangular patch:
mn
m x
n y
cos
cos
W e
Le
2
mn
m n
L
W
e
e
ke k0 rceff
where
mn , mn
rceff r 1 j leff
Le
2 m x
cos
dx
Le
0
We
2 n y
0 cos W e dy
192
Input Impedance
so
We Le
1 m0 1 n0
2 2
mn , mn
m0
To calculate
mn , J zi
1, m 0
0, m 0
ap
( x0e , y0e )
Actual probe
Wp
( x0e , y0e )
Strip model
193
Input Impedance
For a Maxwell strip current assumption, we have:
J sz
I in
2
W p
e 2
y y0
2
W p
y y
,y
2
2
e
0
Wp
Wp
W p 4a p
e
0
( x0e , y0e )
194
Input Impedance
For a uniform strip current assumption, we have:
I in
J sz
,
Wp
W p
y y
,y
2
2
e
0
Wp
e
0
3
2
W p a p e B 4.482 a p
Wp
( x0e , y0e )
Input Impedance
Assume a uniform strip current model
(the two models gives almost identical results):
y0e
mn , J
i
z
Wp
m x0e
n y 1
I in cos
cos
dy
Le
W e W p
e Wp
y
0
m x0e
I in
cos
Wp
L
e
Wp
n e
W cos We y0 y dy '
p
m x0e
I in
cos
Wp
L
e
y y0e y
Use
Wp
Integrates to zero
n y0e
n y0e
n W p
m x0e n y0e
I in
cos
cos
W p sinc
Wp
W e
2 We
Le
196
Input Impedance
Hence
mn , J
i
z
n W p
m x0e
n y0e
I in cos
cos
sinc
L
W
2
W
e
e
e
n Wp
Note: It is the sinc
2
W
e
197
Input Impedance
Summary of Cavity Model
, J i 2
1
mn
z
Z in j h
2
I in m ,n mn , mn
mn , J
i
z
1
2
2
k
mn
e
n W p
m x0e
n y0e
I in cos
cos
sinc
L
W
2
W
e
e
e
W L
mn , mn e e 1 m 0 1 n 0
2 2
2
2
mn
m n
L
W
e
e
ke k0 rceff
198
Input Impedance
Summary (cont.)
rceff r 1 j leff
leff
1
1
1
1
1
Q Qd Qc Qsp Qsw
199
Input Impedance
Probe Inductance
, J i 2
1
mn
z
Z in j h
2
I in m ,n mn , mn
1
2
2
ke mn
Note that
Hence
jX p j h
1
I in
mn , J
( m,n )
(1,0)
i
z
mn , mn
1
2
2
k
mn
e
200
Input Impedance
RLC Model
The input impedance is in the form
Z in Z
m,n
m,n
in
where
m,n
m0
n0
where
m ,n
in
2
i
1 mn , J z
j h
2
I in mn , mn
1
2
2
k
mn
e
201
Input Impedance
Rmn
Z inm ,n
f rmn jQ f rmn
f
rmn
where
Q
f rmn
Rmn
1
leff
and
f
f mn
Pmn
mn
kmn leff
Pmn h
mn , J
1
I in
i
z
mn , mn
202
Input Impedance
2
For f rmn
1 , we have
m ,n
in
Rmn
1 jQ f rmn
f
rmn
203
Input Impedance
Circuit model
Note: The (0,0) mode has a uniform electric field,
and hence no magnetic field. It also has negligible
radiation (compared to the (1,0) mode).
(1, 0)
(0,1)
(0, 0)
Zin
Note: This circuit model is accurate as long as we are near the
resonance of any particular RLC circuit.
204
Input Impedance
RLC Model
Approximately,
(1, 0)
jX p
Zin
205