Derivation of fT And fMAX

of a MOSFET

Derivation of fT (MOSFETs)

The unity current gain frequency* (aka cutoff

frequency)
Defined under the condition that the output is
loaded with an AC short.
fT does not depend on Rg and ro

Derivation of fT (MOSFETs) (Continued)

ios g mVgs igd g mVgs sC gdVgs

iins sVgs (C gs C gd )

Assume the zero (sCgd) is smaller compared to gm.

g m sC gd
g m (C gs C gd )
ios
gm
AI

iins s (C gs C gd ) s (C gs C gd )
j
when
AI 1
gm
fT
2 (C gs C gd )

AI

g m (C gs C gd )
j

fT with Parasitic RS and RD

Derivation of fT (MOSFETs) (Continued)

(RS and RD are included)

AV

Vd
g m ( RS RD ) // ro g m ( RS RD )
Vgs

CM C gd 1 g m ( RS RD )

Millers
Approximation

C gs C gd 1 g m ( RS RD ) C gs C gd
1

C gd ( RS RD )
2 f T
gm
gm

Derivation of fMAX (MOSFETs)

fMAX * is the frequency at which the

maximum power gain =1 (*aka
maximum oscillation frequency)
fMAX is defined with
its input and output ports
conjugate-matched for maximum
power transfer
So, we need to know the input and
output impedance to define the
input and output power as well as
achieve the max power transfer
matching condition.

Derivation of fMAX (MOSFETs)

Z out

Z in Rg

1
Rg
j C gs

At high frequency (close to

fmax), we can assume that
1
0
j C gs
So, Rg is independent of RL

Vt

it

Vt
it g mVgs idg
ro
Assumeidg g mVgs
&
Z out

1
g mC gd

ro C gs C gd

CTC gs C gd

Vgs
Vt

C gd
C gs C gd

CT
ro //

g mC gd

Derivation of fMAX
Conjugate match at the input:

(MOSFETs) (Continued)
Conjugate match at the output:

For the matching conditions,

Z S Rg iin iins

Vs

2 Rg

ios
RL Rout io
2

Power Gain (Under Conjugate Match)

i R
1 ios

Gp

i R
4 iins
1
2
1
2

2
o out
2
in in

RL 1 fT

Rg 4 f

RL
Rg

when
Gp 1
f f MAX
RL

1
fT
2

RL
Rg

1
g mC gd

ro C gs C gd

f MAX

1
2

Using the
definition of fT

1
1
2 fT C gd
ro

fT
2 fT C gd Rg

Rg
ro

Derivation of fMAX

(MOSFETs)(Continued)

(RS and RD are included)

Z in Rg Rs

For high frequency condition,

Cgs short
Hence, replace Rg by Rg+Rs

f MAX

fT

w/ (RS+RD) term

2 fT C gd ( Rg Rs )

w/o (RS+RD) term

Rg Rs
ro

Derivation of fT And fMAX

of a BJT

Derivation of fT (Bipolar)

For Bipolar Transistors,

C gs C C gd C
Vgs Vbe ro
gm
fT
2 (C C )
CCdBE C DE
C CdBC
C DE

dQDE

dvBE

CDE is due to minority

carriers caused by FB

Derivation of fT (Bipolar) (Continued)

QDE QE QB QBE QBC
QE = minority holes stored in emitter
QB = minority electrons stored in base
QBE = electrons induced by the current
through the depletion region of BE-junction
QBC = electrons induced by the current
through the depletion region of BC-junction

Derivation of fT (Bipolar) (Continued)

Width of Neutral Region

dQDE
WE2
WB2
X BE X BC
F
t E t B t BE t BC

diC
2 DE 2 DB 2 s
2 s
C DE

dQDE
di
F C F gm
dvBE
dvBE

C C CdBE C DE CdBC CdBE CdBC

1

F
2 f T
gm
gm
gm

1 if drift current is considered.

X BC is greater than X BE because of reverse-biasing.

Width of
Depletion
Region

Derivation of fT (Bipolar)
(RS and RD are included)

For bipolar, the result is similar.

The only difference is that the F term must be
included.
V
AV

Vbe

g m ( RE RC )

CM CdBC 1 g m ( RE RC )

C C DE CdBC 1 g m ( RE RC )
1
dBE
2 fT
gm

CdBE g m F CdBC

CdBC ( RE RC )
gm
CdBE CdBC

F CdBC ( RE RC )
gm

Derivation of fMAX (Bipolar)

For bipolar transistors, there is no ro term.

f MAX

fT
2 fT Cbc Rb

fT

8 Cbc Rb
Rg
ro