MTJ

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Consists of two layers of

magnetic metal, such as
cobalt-iron, separated by an
ultra thin layer of insulator,
typically aluminum oxide with
a thickness of about 1 nm.
The insulating layer is so thin
that electrons can tunnel
through the barrier if a a
voltage is applied between the
two metal electrodes.
The current depends on the
relative
orientation
of
magnetizations of the two
ferromagnetic layers, which
can be changed by an applied
magnetic
field.
This
phenomenon
is
called
tunneling magneto resistance
(TMR).

Tunnel Magnetoresistance
Tunnel Magnetoresistive effect combines
the two spin channels in the
ferromagnetic materials and the quantum
tunnel effect
TMR junctions have resistance ratio of
about 70%
MgO barrier junctions have produced
230% MR

Tunnel Magnetoresistance
Magnetic tunnel junction has two
magnetic layers separated by an insulating
metal-oxide layer.
Is similar to a GMR spin valve except that
a very thin insulator layer is sandwitched
between magnetic layers instead of metal
layer .
The difference in resistance between the
spin-aligned and nonaligned cases is much
greater than for GMR device infact 1000
times higher than the standard spin valve.

MRAM
MRAM stands for
magnetic random
access memory.

Magnetic Tunnel Junctions

It places the
magnetic domains
on the surface of
a silicon chip and
places a
magneto-resistive
sensor beneath
everyone of 4them.

CONTD
Just like a hard
disk,the information
stored in the
magnetic domains is
non volatile.It is not
lost when the power
goes off.
The two main
concept that govern
MRAM technology
are:
GMR Valves

Giant Magnetoresistance
effect(GMR)
The Tunneling Magneto
Resistive effect(TMR)
5

Magnetoresistive Random Access Memory (MRAM)

MRAM uses magnetic storage elements.

The elements are mostly tunnel junctions formed from two
ferromagnetic plates, each of which can hold a magnetic field,
separated by a thin insulating layer.

SRAM VS DRAM VS MRAM

SRAM

DRAM

MRAM

Advantage
Fast read &
write
speed.
Low power
High density
Fast read
&write
speed.
Fast read
&write
speed.

Disadvantag
e
Volatile
Low
density

Volatile
High power

None ??

Comparison with DRAM &

SRAM

In DRAM & SRAM, a bit is represented as charge stored in

capacitor.
In MRAM, data is stored as magnetic alignment of electrons in
a ferromagnetic material. Spin up represents 0 and spin down
represents 1.
MRAM promises:
Density of DRAM
Speed of SRAM
Non-volatility like flash memory.
Thats why its called universal memory.
256 K MRAM

Journey of MRAM
Problems encountered:
1. The density of bits was low.
2. Cost of chips was high.
Improved designs to overcome these problems would work
only at liquid nitrogen temperature.
An important breakthrough was made in the year 2009.
Scientists at the North Carolina State University discovered
a semiconductor material Galium manganese nitride that
can store & retain spin orientation at room temperature.
And research is still going on

Detection of spin polarization in

silicon
Tunnel barrier
Spin accumulation
eu

Ferro magnet

Al2O3

Tunnel resistance in proportional to

n type Silicon
u
I =G *(V-

u/2)

I =G *(V+

u/2)

MRAM
Magneto resistive RAM
Reading process
Measurement of the
bit cell resistance by
applying a current in
the bit line
Comparison with a
reference value midway between the bit
high and low
resistance values

MRAM
Magneto resistive RAM
Writing process
Currents applied in both
lines : 2 magnetic fields
Both fields are
necessary to reverse
the free layer
magnetization
When currents are
removed : Same
configuration

MRAM
Magneto resistive RAM
Array structure of
MRAM
Reading: transistor of
the selected bit cell
turned on + current
applied in the bit line
Writing: transistor of
the selected bit cell
turned off + currents
applied in the bit and
word lines
Need of 2 magnetic
fields for writing

MRAM
Magneto resistive RAM

MTJ test structures developed at SPINTEC: the die area with 1x5
m
0.2 m width isolated MTJ element after etch

MRAM
MRAM uses magnetic storage
elements instead of electric used in
conventional RAM
Tunnel junctions are used to read the
information stored in
Magnetoresistive Random Access
Memory, typically a0 for zero point
magnetization state and 1 for
antiparallel state

MRAM
Attempts were made to control bit
writing by using relatively large
currents to produce fields
This proves unpractical at nanoscale
level

Spin Transfer
Current passed through a magnetic field
becomes spin polarized
This flipping of magnetic spins applies a
relatively large torque to the magnetization
within the external magnet
This torque will pump energy to the magnet
causing its magnetic moment to precess
If damping force is too small, the current
spin momentum will transfer to the
nanomagnet, causing the magnetization will
flip
Unwanted effect in spin valves
Possible applications in memory writing

MRAM
The spin transfer mechanism can be
used to write to the magnetic
memory cells
Currents are about the same as read
currents, requiring much less energy

MRAM
MRAM promises:
Density of DRAM
Speed of SRAM
Non-volatility like flash

Spin Transistor
Ideal use of MRAM would utilize control of
the spin channels of the current
Spin transistors would allow control of the
spin current in the same manner that
conventional transistors can switch charge
currents
Using arrays of these spin transistors,
MRAM will combine storage, detection, logic
and communication capabilities on a single
chip
This will remove the distinction between
working memory and storage, combining
functionality of many devices into one

Datta Das Spin Transistor

The Datta Das Spin
Transistor was first spin
device proposed for
metal-oxide geometry
Emitter and collector
are ferromagnetic with
parallel magnetizations
The gate provides
magnetic field
Current is modulated
by the degree of
precession in electron
spin

Magnetic Semiconductors
Materials like magnetite are magnetic
semiconductors
Development of materials similar to
conventional
Research aimed at dilute magnetic
semiconductors
Manganese is commonly doped onto
substrate
However previous manganese-doped GaAs has
transition temp at -88oC

Curie temperatures above room must be

produced.

TRANSPINNORS
A Transpinnor is a bridge of four
electrically connected GMR films whose
resistance is controlled by the magnetic
field from the current in one of more
input strip lines electrically isolated from
GMR films.
Transpinnors can be used as selection
matrix elements for magnetic
memories,for logic elements of all
kinds(e.g..AND,OR,NAND , NOT),for
amplifiers,differential amplifiers.
23

ADVANTAGES
The various advantages of spintronics is
as follows:
Does not require unique and specialized
semiconductors;can be implemented
with common metals such as Cu,Al.
Spintronic devices consume less power.
The memory remains non-volatile.

24

LOOPHOLES
The various disadvantages are as
follows:
The fringe fields generated interfere
with the neighboring elements.
Hazards of holes
Much remains to be understood about
the behavior of electron spins in
materials for technological applications
25

CONCLUSION
Spintronics is a rapidly emerging field of
science and technology that will most
likely have a significant impact on the
future of all aspects of electronics as we
continue to move into the 21st century.

26

CONTD

Conventional
electronics are based
on the charge of the
electron. Attempts to
use
the
other
fundamental
property
of
an
electron, its spin,
have given rise to a
new, rapidly evolving
field,
known
as
spintronics,
an
acronym
for
spin
transport electronics
that
was
first
introduced in 1988.
27

Applications

GMR sensors find a wide range of

applications:
Fast and accurate position and motion
sensing of mechanical components in
precision engineering and robotics.
Missile Guidance
Position and motion sensing in
computer video games.
Key Hole Surgery and post operative
care.
Automotive sensors for fuel handling
system, speed control and navigation

Applications
Spin Valve Transistors:
It is based on magneto
resistance, found in
multi layers (Co-Cu-Co)
forming
the
base
region.
The collector current
becomes strongly field
dependent,
the
extreme
magneto
sensitivity makes the
transistor,
an
interesting device for
high technology hard
disks and magnetic

Conclusion
With lack of dissipation, spintronics
may be the best mechanism for
creating ever-smaller devices. The
potential market is enormous, In
maybe
a
10-year
timeframe,
spintronics will be on par with
electronics. That's why there's a huge
race going on around the world In
exploring Spintronics.

Conclusion

Spin property of electrons are yet to mastered.

Researcher and scientist are taking keen interest.
Universities and electronic industries collaborating .
Span of last two decade major milestones.
It holds vast opportunities for physics , material & device
engineering & technology
Last year PTB, Germany, have achieved a (2GBit/s) write cycle
Potential of the field is colossal and
continuous development is required.

Current Research
Material
science
Many
methods of
magnetic
doping

Spin
transport in
semiconducto

Conclusion
Interest in spintronics arises, in part, from the
looming problem of exhausting the fundamental
physical limits of conventional electronics.
However, complete reconstruction of industry is
unlikely and spintronics is a variation of
current technology
The spin of the electron has attracted renewed
interest because it promises a wide variety of
new devices that combine logic, storage and
sensor applications.
Moreover, these "spintronic" devices might lead to
quantum computers and quantum
communication based on electronic solid-state
devices, thus changing the perspective of
information technology in the 21st century.