Adaptive Control of a

Multi-Bias S-Parameter Measurement

System
Dr Cornell van Niekerk
Microwave Components Group
University of Stellebosch
South Africa

Presentation Overview
Introduction & Background Information
Equivalent Circuit Non-Linear Modeling
Adaptive Algorithm Requirements
Defining the Safe Operating Area (SOA) of a Device
S-Parameter Driven Adaptive Measurement Algorithms
DC Driven Adaptive Measurement Algorithms
Results & Conclusions

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Introduction & Background

Interest is in algorithms required for construction of device CAD models
Focus is on small-signal equivalent circuit extraction procedures
Have developed robust multi-bias extraction algorithms for GaAs FETs
Focus is shifting to bulk Si MOSFET devices
Diagnostic applications for monitoring technology development
Starting point for construction of equivalent circuit based nonlinear CAD
models

Local interest is packaged power FETs, especially LDMOS devices

Apply modeling to off-the-shelf devices, scalability therefore not an issue
Do require accurate modeling of extrinsic networks

Model extraction algorithms constrained not to use device design

information

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Multi-Bias Decomposition-Based Extraction

Algorithm is formulated to

overcome the ill-conditioned

nature of problem

Combines data from multiple

bias points into one integrated

problem solver

Decomposition-based optimizer
used to efficiently handle large
number of parameters

Have been hybridized with

analytic extraction procedures

Fast, robust and starting value

independent

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Moving to Bulk Si MOSFET Devices

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Nonlinear Equivalent Circuit Modeling Process

Measure Multi-Bias S-Parameters
&
DC Data

Extract Small-Signal Circuit Models

from the Multi-Bias S-Parameter Data

Construct Nonlinear Circuit Model

from Equivalent Circuit Data
and DC Measurements

Verify Nonlinear Model thru Design

&
Nonlinear Measurements
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Equivalent Circuit Models

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Typical Multi-Bias S-parameter & DC Measurement

System

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Why Create an Adaptive Measurement Algorithm?

Nonlinear measurement-based models require large volumes of data
This implies the use of computer controlled measurement setups
Want more bias points in areas where the device characteristics change
rapidly

For larger devices, a high uniform density of bias points is not practical
An adaptive control procedure with following qualities is required:

Must ensure equipment & device safety

Must exploit all available measured data (DC & S-Parameter data)
Decisions should be based on direct analysis of data (technology
independence)
Make provision for finite programming & measurement resolution of DC
sources

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Who is the competition?

Most extensive work done by Fan & Root (Agilent)
[1] S. Fan, et. al. Automated Data Acquisition System for FET
Measurements and its Application, ARFTG Conference, pp. 107-119
[2] D.E. Root, et. al. Measurement-Based Large-Signal Diode Modeling
Systems for Circuit and Device Design, IEEE Transactions on Microwave
Theory and Techniques, Vol. 41, No. 12, Dec. 1993, pp. 2211-2217

Ref [1] only uses DC data adaptive exploration of I DS(VDS) curves

Ref [2] uses AC data via previously extracted diode small-signal model
Majority of work on adaptive sampling procedures is focused on EM
analysis procedures to reduce the number of time consuming
simulations required

Techniques developed for EM simulations not directly applicable to

measurement examples due to measurement noise

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Components of an Adaptive Measurement System

Define a fine measurement grid minimum bias point separation

All bias points to be measured must fall on the fine grid

Fine grid is a square defined by min/max bias voltages
Easy way to handle DC source programming/measurement uncertainties

Experimentally determine Save Operating Area (SOA) of device

SOA limits defined by max/min V GS, VDS, IGS, IDS, PDS
Boundaries to be determined experimentally using minimum of
measurements
Establish fine grid bias points that fall inside the SOA

S-Parameter Driven Refinement Algorithm

Start with an initial selection of measurements, and refine selection by
placing N new bias points based on analysis of S-parameter data

DC Driven Refinement Algorithm

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Determining the Safe Operating Area (SOA)

Measure an approximate value
of threshold voltage VT

User defined list of VGS bias

voltages, with most in device
active region

Explore IDS(VDS) curves at each

VGS bias using large VDS to find
SOA limits

Linear extrapolation is used to

check if a projected
measurement will exceed a SOA
limit

Key to procedure is lots of safety

checks

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S-Parameter Driven Refinement Procedure

SOA procedure provides initial set of measurements for refinement
procedure

Adaptive procedure places N new bias points so as to best capture

nonlinear behavior of device

Analyze the device S-parameters to determine the position of new

bias points

Higher density of bias points in regions where any of 4 S-parameters

are experiencing large variations with bias

Change in S-parameters signifies change in model parameter values

During measurement phase it is not important to know which
parameter has changed, just that change has occurred

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Increasing Diversity in Selected S-Parameter Data

Need to define the

differences between SParameters

S-Parameter curves
change in:

Length
Position
Shape & Orientation

Require a geometric

abstraction to describe SParameters

S-Parameter Centroids
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S-Parameter Driven Refinement Procedure

Identify adjacent bias points makes use of Delaunay triangulation

Calculate distance between centroids of adjacent bias points
Place new bias points between bias points with largest centroid separation
Safety checks for duplicate bias points
Fine measurement grid introduces refinement limitations

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DC Driven Refinement Algorithm

For complete characterization, both the DC & AC characteristics
must be considered

Can use existing procedures, such as those proposed by Fan &

Root

Simple alternative is to use difference between linear and spline

interpolation models of IDS(VGS,VDS)

Place new measurements where difference between interpolation

models is largest

Draw back is that boundaries of SOA needs to be well defined

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Illustration of Adaptive Bias Point Selection (1)

GaAs HEMT
50mV Fine grid
9 Initial measurements defining
boundaries of the SOA

100 iterations of the S-

parameter refinement algorithm

463 newly selected bias points

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Illustration of Adaptive Bias Point Selection (2)

Bulk Si MOSFET device
Physical gate length 70 nm
20 m total gate width
2 gate fingers
50 mV x 100 mV fine grid
28 initial measurements,

determined with SOA exploration

algorithm

80 iterations of S-parameter
refinement algorithm

292 newly selected bias points

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Nonlinear Modeling Verification (GaAs FET)

Table-based model implemented
in Agilent ADS circuit simulator

Table-based model used linear

interpolation

Reference model was constructed

using all the data, in other words,
every point on the fine grid

2nd model was constructed using

adaptively sampled data 50%
data reduction

NNMS Nonlinear measurements

were performed

Device biased in class-AB mode

Fundamental excitation is 5 GHz
Single tone power sweep driving
FET into compression

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Modeled & Measured Nonlinear Results

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Conclusions & Future

Incorporates both S-parameter & DC data into decision making
process

Captures both VDS and VGS switch-on regions

Procedure is technology independent
It has a high emphasis on device and equipment safety
Makes provision for equipment measurement limitations
Future work will focus on characterizing LDMOS power devices
Extensions include the incorporation of designer knowledge into the
adaptive measurement procedure

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