Modul 5

Cacat Kristal/Atomic
imperfections in the Atomic
and Ionic Arrangements

Obyektif modul 5
three basic types of imperfections:
point defects, line defects (or
dislocations), and surface defects

Cacat Titik
(a) vacancy, (b) interstitial
atom, (c) small substitutional
atom, (d) large substitutional
atom, (e) Frenkel defect, (f)
Schottky defect

Point defects: (a) vacancy, (b) interstitial atom, (c)

small substitutional atom, (d) large substitutional atom,
(e) Frenkel defect, (f) Schottky defect.

vacancy
Vacancy terbentuk selama terjadi
proses pembekuan (solidification )
dan juga hasil dari getaran otomic
yang menyebabkan terjadinya
perpindahan atom dari kisi
normalnya. Jika dalam keadaan
setimbang jumlah vacancy
dinyatakan dengan Nv, maka dengan
naiknya temperature jumlah vacancy
dinyatakan dalam pesamaan sebagai

Pengaruh Temperatur
dimana;
Nv = Jumlah lowongan
N = Jumlah atomik
Qv = Energi aktivasi (energi getaran yang
diperlukan untuk membentuk lowongan)
T = Temperatur obsolut ( kalvin ).
K = Konstata boltzmanns 1,38. 10-23 J/atom
K atau 8,62.10-5 eV/atom-K
Dari persamaan (5.1 ) terlihat bahwa jumlah
vacancy dipengaruhi oleh ekponensial
temperatur - ( , sedangkan pada temperatur
di bawah melting pointnya

Contoh

Calculate the concentration of vacancies in copper at room

temperature (25oC). What temperature will be needed to
heat treat copper such that the concentration of vacancies
produced will be 1000 times more than the equilibrium
concentration of vacancies at room temperature? Assume
that 20,000 cal are required to produce a mole of vacancies
in copper.

The lattice parameter of FCC copper is 0.36151 nm. The

basis is 1, therefore, the number of copper atoms, or lattice
3
atoms/cell
22
3
points, per4 cm
is:

(3.6151 10 cm)

8.47 10 copper atoms/cm

(Continued)
At room temperature, T = 25 + 273 = 298 K:
Q
n n exp

RT

22
8.47 10

20,000

cal
mol

atoms

. exp
3
cal
cm
1.987
298K

mol K

1.815 108 vacancies/cm 3

We could do this by heating the copper to a temperature at
which this number of vacancies forms:
11

n 1.815 10
22

Q
n exp

RT
o

(8.47 10 ) exp(20,000 /(1.987 T )), T 102 C

(a) The location of the , , 0 interstitial site in BCC

metals, showing the arrangement of the normal atoms and
the interstitial atom (b) , 0, 0 site in FCC metals, (for
Example 4.3). (c) Edge centers and cube centers are some of
the interstitial sites in the FCC structure (Example 4.3).
9

Schottky defect

Dislocation
Dislocation - A line imperfection in a crystalline
material.
Screw dislocation - A dislocation produced by
skewing a crystal so that one atomic plane produces
a spiral ramp about the dislocation.
Edge dislocation - A dislocation introduced into the
crystal by adding an extra half plane of atoms.
Mixed dislocation - A dislocation that contains partly
edge components and partly screw components.
Slip - Deformation of a metallic material by the
movement of dislocations through the crystal

Figure 4.8 (a) When a shear stress is applied to the dislocation in (a),
the atoms are displaced, causing the dislocation to move one Burgers
vector in the slip direction (b). Continued movement of the
dislocation eventually creates a step (c), and the crystal is deformed.
(Adapted from A.G. Guy, Essentials of Materials Science, McGraw-Hill,
1976.) (b) Motion of caterpillar is analogous to the motion of a
dislocation.
12

Figure 4.6 A mixed dislocation. The

screw dislocation at the front face
of the crystal gradually changes to
an edge dislocation at the side of
the crystal. (Adapted from W.T.
Read, Dislocations in Crystals.
McGraw-Hill, 1953.)
13

14

(c) 2003 Brooks/Cole Publishing / Thomson

Learning

(c) 2003 Brooks/Cole Publishing / Thomson

Learning
(c)2003 Brooks/Cole, a division of Thomson Learning, Inc. Thomson Learning is a trademark used herein under license.

Figure 4.13 Electron photomicrographs of dislocations in

Ti3Al: (a) Dislocation pileups (x26,500). (b) Micrograph at
100 showing slip lines and grain boundaries in AI. (c)
Schematic of slip bands development.
15

Surface Defects
Surface defects - Imperfections, such as grain
boundaries, that form a two-dimensional plane within the
crystal.
Hall-Petch equation - The relationship between yield
strength
y
0and
Kgrain
d 1/ 2 size in a metallic materialthat is,

ASTM grain size number (n) - A measure of the size of

the grains in a crystalline material obtained by counting
the number of grains per square inch a magnification
100.
Small angle grain boundary - An array of dislocations
causing a small misorientation of the crystal across the
surface of the imperfection.

16

Figure 4.16 (a) The atoms near the

boundaries of the three grains do not have
an equilibrium spacing or arrangement. (b)
Grains and grain boundaries in a stainless
steel sample. (Courtesy Dr. A. Deardo.)
17

Calculation of ASTM Grain Size Number

Suppose we count 16 grains per square inch in a

photomicrograph taken at magnification 250. What is the
ASTM grain size number?
SOLUTION
If we count 16 grains per square inch at magnification 250,
then at magnification 100 we must have:
N = (250/100)2 (16) = 100 grains/in.2 = 2n-1
Log 100 = (n 1) log 2
2 = (n 1)(0.301)
n = 7.64

18

Figure 4.19 The small angle

grain boundary is produced by
an array of dislocations,
causing an angular mismatch
between lattices on either side
of the boundary.

19

Figure 4.20 Application of a stress to the perfect crystal (a) may

cause a displacement of the atoms, (b) causing the formation of a
twin. Note that the crystal has deformed as a result of twinning.
20

Figure 4.20 (c) A micrograph of twins within a

grain of brass (x250).

21

Figure 4.22 If the dislocation at point A moves to the

left, it is blocked by the point defect. If the dislocation
moves to the right, it interacts with the disturbed lattice
near the second dislocation at point B. If the dislocation
moves farther to the right, it is blocked by a grain
boundary.
22

TERIMAKASIH