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Outlines
3-1.
Bonding Forces and Energy Bands in So
lids
Outlines
Outlines
In Isolated Atoms
In Solid Materials
Core
1st Band
2nd Band
3rd Band
Na (Z=11) [Ne]3s1
Cl (Z=17) [Ne]3s1 3p5
Na+ Cl
Na+
e
_
7
<100>
Si
10
4N States
Conduction
band
2p
Eg
2s-2p
2s
4N States
Diamond
lattice
spacing
2p
2s
Valence
band
1s
Atomic separation
1s
11
3-1-3. Metals,
Semiconductors &
Insulators
For electrons to experience acceleration in
3-1-3. Metals,
Semiconductors &
Insulators
Empty
Empty
Eg
Eg
Filled
Filled
Insulator
Semiconductor
13
3-1-3. Metals,
Semiconductors &
Insulators
In metals the bands
either overlap or are
only partially filled.
Thus electrons and
empty energy states
Partially
Filled
Filled
Metal
Overlap
Metal
14
k ( x ) U ( k x , x )e
jk x x
x : Direction of propagation
k : Propagation constant / Wave vector
: The space-dependent wave function
for the electron
15
16
Eg=h
Eg
Et
k
Direc
t
Indirect
Example 3-1
17
Example 3-1:
Px h k x
Example 3-2
18
Answer:
Px
h jk x x
(e )dx
j x
2 jk x x
U e
U 2 dx
h k x U 2 dx
U dx
h kx
Si
Ge
GaAs
AlAs
Gap
Lattice
1.11 1350
480 2.5E5
0.67 3900 1900
43
1.43 8500 400 4E8
2.16
180
0.1
2.26
300
150
1
D 5.43
D 5.66
Z 5.65
Z 5.66
Z 5.45
20
E
2.8
2.6
L
0.3eV
2.4
2.2
X
2.0
1.43eV
2.16eV
AlxGaAs
AlAs
Ga1-xAs
X
1.8
k 1.6
1.4
0
0.2
0.4
0.6
0.8
121
3-2. Carriers in
Semiconductors
E
c
300
18
14
15
20
19
11
12
13
17
16
1487652309KK
10
E
g
E
v
Electron H
Hole P
Pair
E
22
kj
j`
j
0
NN
(qq))
q )V j
J J(
(VViiq)V(0j q)
ii
23
Example 3-2:
Find the (E,k) relationship for a free
electron and relate it to the
electron mass.
E
k
25
Answer:
From Example 3-1, the electron
momentum is:
p mv h k
1 2 1 p2 h 2 2
E mv
k
2
2 m 2m
d 2E h 2
2
dk
m
26
Answer (Continue):
Most energy bands are close to parabolic
at their minima (for conduction bands)
or maxima (for valence bands).
EC
EV
27
m*
h2
d 2E
dk 2
Remember that in
GaAs: E
L
m ( ) m ( X
*
or
L)
1.43eV
k
28
h2
d 2E
dk 2
29
d E
0
2
dk
2
EC
d E
0
2
dk
m 0
*
m*
h2
d 2E
dk 2
m 0
*
Ge
*
m
m
n
*
p
Si
GaAs
0.55m0
1.1m0
0.067 m0
0.37 m0
0.56m0
0.48m0
30
filled
with
electrons
and
the
Si
h+
n=p=ni
32
and the
cm3 s
recombination
rate as
EHP
ri (
3 )
cm s
i
ri g i
g i (T )
increases when
ri r n0 p0 n g i
2
r i
33
V
P
50
18
14
15
20
19
11
12
13
17
16
1487652309KKK
10
As
Sb
Donor
v
35
E
c
B
Al
50
18
14
15
20
19
11
12
13
17
16
1487652309KKK
10
Ga
In
E
E
Acceptor
v
36
e- Sb
h+
Al
Si
37
mq
E
; n 1 , K 4 0 r
2 2
2K h
38
Example 3-3:
Calculate the approximate donor
binding energy for Ge(r=16,
mn*=0.12m0).
39
Answer:
*
n
mq
E
2 2
8( 0 r ) h
31
19 4
0.12(9.11 10 )(1.6 10 )
12
2
34 2
8(8.85 10 16) (6.63 10 )
1.02 10
21
J 0.0064eV
40
Al0.3Ga0.7As
GaA
s
50
E1
1.85e
V
1.43e
V
Eh
Al0.3Ga0.7As
0.28e
V
0.14e
V 43
n 2 2 h 2 , modified for
En
2
effective mass and finite
barrier height.
2mL
as described by
for
holes
are
restricted
to
44
An electron on one of the discrete conduction band states (E1) can make a transition
to an empty discrete valance band state in
the GaAs quantum well (such as Eh), giving
off a photon of energy Eg+E1+Eh, greater
than the GaAs band gap.
45
3-3. Carriers
Concentrations
46
must be considered.
The distribution of electrons over a range of
these statistical arguments is that the distribution of electrons over a range of allowed
energy levels at thermal equilibrium is
47
k : Boltzmanns constant
f(E) : Fermi-Dirac
function
distribution
Ef : Fermi level
48
1
1 e
( E f E f )
kT
1
1
11 2
f(E)
1
T=0K
T
>0K
12>T
1
1/2
Ef
E
49
f(Ec
)
E
Ef
[1f(Ec)
]
f(E)
1/2
Intrinsic
p-type
n-type
50
n0 N C f ( EC )
51
N(E)f(E)
EC
Ef
EV
N(E)[1-f(E)]
Holes
Intrinsic
p-type
n-type
52
1
1 e
( EC EF )
n0 N C e
kT
( EC EF )
( EC EF )
kT
kT
2 mn* kT 3 2
N C 2(
)
2
h
53
1
1 e
p0 N V e
N V 2(
( EV EF )
( EF EV )
2 m*p kT
h2
kT
( EF EV )
kT
kT
54
kT
n0 p0 N c N v e
ni pi N c N v e
Eg
( Ei Ev )
( Ec Ev )
kT
kT
kT
Eg
N c N v e kT
Eg
ni N c N v e 2 kT
n0 p0 n
2
i
n0 ni e
( EF Ei )
kT
p0 ni e
( Ei EF )
kT
55
Example 3-4:
A Si sample is doped with 1017 As
Atom/cm . What is the equilibrium hole
concentra-tion p0 at 300K? Where
is EF relative to Ei?
3
56
ni2 2.25 10 20
3
3
p0
2
.
25
10
cm
17
n0
10
n0 ni e
( EF Ei )
kT
n0
1017
E F Ei kT ln 0.0259 ln
0.407eV
10
ni
1.5 10
57
1.1eV
0.407eV
Ec
EF
Ei
Ev
58
References: