Pressure Sensor Lecture

ECE544
Prepared by D.J. Tegtmeier

Presentation Overview
1.
2.

3.

Pressure Sensor Theory Overview

Pressure Sensor Process Overview
and Fabrication Theory Review
Express Safety Concerns for Particular
Processes

Pressure Sensor Theory

Two Main Types of Pressure Sensors

Capacitive Sensors

Work based on measurement of

capacitance from two parallel
plates.
C = A/d , A = area of plates d =
distance between.
This implies that the response of a
capacitive sensor is inherently
non-linear. Worsened by
diaphragm deflection.
Must use external processor to
compensate for non-linearity

Pressure Sensor Theory

Piezoresistive Sensors

Work based on the

piezoresistive properties of
silicon and other materials.
Piezoresistivity is a response to
stress.
Some piezoresistive materials
are Si, Ge, metals.
In semiconductors,
piezoresistivity is caused by 2
factors: geometry deformation
and resistivity changes.

Reference: http://en.wikipedia.org/wiki/Piezoresistance_Effect

Pressure Sensor Theory

Our Sensor is a
Piezoresistive
Sensor based on a
Wheatstone Bridge
Configuration.
Resistors are made
with Boron Diffusion.

Pressure Sensor Theory

Vout =Iin*R

Why use a Constant

Source Bridge?
Produces Linear
Output
Neglects Lead
Resistance

R + R

R - R

R - R

R + R

Pressure Sensor Process

Overview

Initial Wafer is 525

m thick, n-type,
<100> double-side
polished (DSP).
Why use a <100>
DSP wafer?
Why use an n-type
substrate?

Pressure Sensor Process

Overview Step 1

1.
2.

3.
4.

What should ALWAYS be step 1?

Wafer Cleaning (RCA Clean)
Steps
TCE (Tetrachloroethylene) Immersion, Acetone, Methanol
Base Clean - H2O/H2O2/NH4OH (5 parts,1 part,1 part)
@ 70 C to Remove Organic Contaminants
Dilute HF Immersion (2.5%) Why?
Acid Clean - H2O/H2O2/HCl (4 parts, 1 part, 1 part) @ 70 C
to remove metallic and ionic contaminants.

Pressure Sensor Process

Overview Step 2

Any guesses?
Thermal Oxidation
Wet Oxidation
Followed by Dry
Oxidation

Why do Wet Oxidation

followed by Dry?

Si + O2 SiO2 (Dry Oxidation)

Si + 2H2O2 SiO2 (Wet Oxidation)

Pressure Sensor Process

Overview Step 3

Photolithography for
Piezoresistive Elements
Contact Lithography
Use Shipley 1813
Positive Resist
Si + O2 SiO2 (Dry Oxidation)
What happens to areas
Si + 2H2O2 SiO2 (Wet Oxidation)
exposed to UV light in
Positive Resist?
If we want piezoresistive
holes, do we use darkfield or light-field mask?

Pressure Sensor Process

Overview Step 3 Cont.

DNQ Method using

Mercury Lamp
Diazonap. Changes to
carboxylic acid via Wolf
re-arrangement
Carboxylic Acid is more
soluble in a base than
Novolak. So exposed
areas dissolve.
Use TMAH (a base)
mixture to develop

Ref: http://chem.chem.rochester.edu/~chem421/polymod2.htm

Pressure Sensor Process

Overview Step 4 - Diffusion

1.
2.

3.

Creates Resistors in
Substrate
Three Methods
Solid Evap. (Tetramethyl
Borate, Boron Nitride) - Rare
Gaseous Diborane (B2H6)
Dangerous!! 160 ppm for 15
min life threatening
Liquid Our Type PBF-6MK
Borosilicate polymer in
ethanol. Creates borosilicate
glass, boron oxide, and
unused boron.

5 Squares
3 Squares

1 Square

Ref: Jaeger, Richard. Introduction to Microelectronic Fabrication

Pressure Sensor Process Overview

Step 4 Diffusion Continued

What is a constant source diffusion?

What is a limited source diffusion?
What is drive-in?
How can you get rid of boron oxide
and borosilicate glass?
What additional step does this
create?

Surface
Concentration

Junction Depth

Pressure Sensor Process Overview

Step 5 Backside Photlithography

Windows Must Be
Opened in New Oxide
For Backside Etch.
Use Front to Backside
Alignment
Etch Silicon Dioxide
w/BOE (HF 6:1)
Finished when wafer is
hydrophobic (water rolls
off)

Pressure Sensor Process Overview

Step 5 Backside Photlith. Cont.

Must Align Marks

from 1st Mask on
Front of Wafer to
Those on Back
What is Split Field
Alignment?
What is a critical
dimension?

Photo:
http://www.ee.byu.edu/cleanroom/alignment.phtml

Pressure Sensor Process Overview

Step 6 Backside Etch

Need 20 m Thick
Diaphragm, therefore
must etch approx. 500
m.
Why use TMAH instead
of KOH if KOH is faster?

TMAH/IPA

KOH

25% wt.
TMAH

45% wt KOH

17% vol IPA

70oC

75oC

{100}

12 m/hr

21 m/hr

{111}

0.7 m/hr

< 0.05 m/hr

SiO2

<0.01m/hr

< 0.20 m/hr

Ref: Crain, Mark. Powerpoint Thesis Defense

Pressure Sensor Process Overview

Step 7 Pholith. For Contact
Windows

Topside Alignment
Use Shipley 1813
Postive Resist

Ref: Crain, Mark. Powerpoint Thesis Defense

Pressure Sensor Process Overview

Step 8 Metal Deposition and Pattern

Several Methods, we
use Sputtering
2 Types (Magnetron)
-RF Sputter
-DC Sputter
When do you use RF
sputter?
What is a sputter etch?
What is argon used?

http://en.wikipedia.org/wiki/Sputtering

Pressure Sensor Process Overview

Photolithography and Aluminum Etch

First Photoresist is
deposited on metal and
patterned for desired traces
Uses Aluminum Etch, 8595% Phosphoric Acid, 2-8%
Nitric Acid, and Water
Why in the picture is there a
hole in the metal?
What is the difference
between lift-off and metal
etch?
Must Thermal Anneal After
Etch, Why?

Pressure Sensor Process

Overview Wafer Testing

3 Squares

5 Squares

1 Square

R=lw/xj

Contacts Equivalent: Rs=0.65 squares

Resistive Element: 6.3 squares

Rs=/xj

R=(squares)/xj

Pressure Sensor Process

Overview Wafer Testing
2 Testing Structures
Van Der Pauw
-Contacts on Structure
Edge, Symmetrical
Rs = (/ln 2)Vcd/Iab

Kelvin Structures
-Used for Effective Line
Width with Rs
Weff = Iab*L*Rs/V

Pressure Sensor Process

Overview Anodic Bonding

Negative Polarity
Why?
Positive Polarity is faster.
High Temperature, High
Voltage
Na+ ions moved from
interface, leaving
Oxygen and forming
SiO2.

Pressure Sensor Process Overview

Wire Bonding and Packaging

Several Types Ball,

Wedge, etc.
Heated gold wire is
pressed onto surface,
melted, and then
cooled.

Process Safety

Hydrofluoric Acid
- 20-50% Solutions
May Produce No
Immediate Symptoms
- 2.5% Produce
Hypocalcemia
-Fatal Accidents Below
10%

http://www-safety.deas.harvard.edu/advise/accident.html

Process Safety

Protect Your Hands!!!

Avoid Placing Hands
Near Wafer
Be Aware of Those
Working Near You
Communicate

http://www.emedicine.com/emerg/topic804.htm