Two terminal MOS structure

Substrate may be of either p type or n type.

p type substrate, With negative GATE terminal supply
Negative GATE voltage supply creates negative charges on the top metal plate.

Due to E field majority holes are attracted towards the oxide semiconductor
boundary.

This process is known as accumulation of holes.
p type substrate, With moderate positive GATE terminal supply
Moderate positive GATE voltage supply creates positive charges on the top
metal plate.

Due to E field majority holes are rippled deep inside the substrate.

Due to this near oxide semiconductor boundary negative space charge region
is created which contains immobile negative ions.
p type substrate, With high positive GATE terminal supply
High positive GATE voltage supply creates negative charges near oxide
semiconductor boundary in induced negative space charge region.

This process is known as surface inversion.
n type substrate, With positive GATE terminal supply
n type substrate, With moderate negative GATE terminal supply
n type substrate, With high negative GATE terminal supply
In MOSFET current flows due to the process of Surface inversion only.

The term enhancement modemeans that a voltage must be applied to the gate
to create an inversion layer.

For the MOS capacitor with a p-type substrate, a positive gate voltagemust be
applied to create the electron inversion layer.

For the MOS capacitor with an n-type substrate, a negative gate voltagemust
be applied to create the hole inversion layer.
n channel enhancement type MOSFET
To create n channel MOSFET substrates must be of p type.

In p type substrate two n type wells are created.

These two n wells forms Source and Drain terminal of MOSFET.
n channel enhancement type MOSFET Basic operation
In enhancement type n channel MOSFET source and drain terminals are
separated by the p type substrate.

If sufficient positive GATE potential is applied then negative surface inversion
process takes place and source and drain will connect to each other with the n
type channel.

In enhancement type n channel MOSFET source provides electrons which
flows through n channel and collected at drain terminal.

Current will flow from drain to source and that its magnitude depends on the
amount of surface inversion which depends on the positive GATE to SOURCE
voltage.

NMOS V-I characteristics
The threshold voltage of the n-channel MOSFET, denoted as V
TN
, is defined as
the applied gate voltage needed to create an inversion charge.

In simple terms, we can think of the threshold voltage as the gate voltage
required to turn on the transistor.

For the n-channel enhancement-mode MOSFET, the threshold voltage is
positive because a positive gate voltage is required to create the inversion
charge.

If the gate voltage is less than the threshold voltage, the current in the device is
essentially zero.

If the gate voltage is greater than the threshold voltage, a drain-to-source
current is generated as the drain-to-source voltage is applied.
V
GS
<V
TH
V
GS
>V
TH
The i
D
versus v
DS
characteristics for small values of v
DS
are shown.

When v
GS
< V
TN
, the drain current is zero.

When v
GS
is greater than V
TN
, the channel inversion charge is formed and the
drain current increases with v
DS
.

Then, with a larger gate voltage, a larger inversion charge density is created, and
the drain current is greater for a given value of v
DS.
v
DS(sat)
= v
GS
V
TN
i
D
= K
n
(v
GS
V
TN
)^2