CMOS IC FABRICATION

CMOS dominant semiconductor technology today due to

very low power dissipation, increased component density
and reduced cost.

Classification of CMOS process is by the kind of substrate
used n well , p well , twin well.

In CMOS both n channel and p channel MOSFETS are
fabricated.

Either n well is created in p substrate or vice versa.

If both types of well are created , this is called twin tub(
well) process.
n well process
Start from p substrate
Form n weel region
Define p mos and n mos active region
Form field and gate oxidation
Form ppolysilicon
Implant n+ diffusion regions
Implant p+ diffusion regions
Create contact circuit
Metallization





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Advantages of n well over p well process
N well is superior to p well because of lower substrate
bias effect

Low parasitic capacitance with source and drain

Lower mobility of holes

Disadvantages of n well process
Higher power consumption
Lower performance
Easy latch up
Higher cross talk
Does not support high system reliability
TWIN TUB PROCESS
Tub formation
Thin Oxide Etching
Source and Drain implantation
Contact cut Diffusion
Metallization
TWIN TUB CMOS PROCESS
Provides basis for separate optimization of nmos and
pmos.

Thus making it possible to analyse the treshold
voltage,body effect and channel transconductance of
both transistors to be tuned independently.

Starting material is n+ or p+substrate with a lightly
doped epitaxial layer on the top.
TWIN TUB PROCESS STEPS
Starting with n or p substrate
Epitaxial layer formation
Tub formation
Field and gate oxidation
Form polysilicon
Source and drain implantation
Contact cut definition
metallization
TWIN TUB PROCESS
ADVANTAGES
Seperately Optimized wells
Balanced performance
Treshold adjust steps can be
seperately done
ELECTRON BEAM LITHOGRAPHY[EBL]
Used to generate feature size less than1 micro
metre.
Two types of E beam s/ms
E beam pattern generator
E beam projection s/m
In E beam the energy reuired is provided by the
electron.
The process is too slow
The electrons cause the blurring of the image in the
resist.
X ray LITHOGRAPHY
Similar to optical lithography, where x rays are
used instead of uv rays
The exposure of the resist is performed by the
proximity printing, keeping a gap of 25 to 40
micro metre b/w the wafer and mask.
The short wavelength of x- ray reduces diffraction
effects leading to high image quality.
Feature size upto .1 micro metre can be achieved
by lithographic process.
Serious issues like aging and mask distortion are
faced by this process.