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n
=
2qc
si
N
a
C
ox
Body effect
Reorganize threshold voltage equation:
V
t
= V
t0
+ AV
t
Threshold voltage is a function of
source/substrate voltage V
sb
.
Body effect is the coefficient for the V
sb
dependence factor.
Channel length modulation length
parameter
o describes small dependence of drain current on V
ds
in saturation.
Factor is measured empirically.
New drain current equation:
I
d
= 0.5k (W/L)(V
gs
- V
t
)
2
(l - o V
ds
)
Equation has a discontinuity between linear and
saturation regions---small enough to be ignored.
Note: I use o instead of to avoid confusion with
channel parameter .
Gate voltage and the channel
gate
drain source
current
I
d
V
ds
< V
gs
- V
t
V
gs
> V
ds
+ V
t
gate
drain source
current
I
d
gate
drain source
I
d
V
ds
= V
gs
- V
t
V
gs
= V
ds
+ V
t
V
ds
> V
gs
- V
t
V
gs
< V
ds
+ V
t
Linear region
Saturation region
Inversion layer
current
Pinch off
dI
d
/dV
ds
decreases
Channel transconductance decreases
Inversion layer shrinks
Leakage and subthreshold current
A variety of leakage currents draw current
away from the main logic path.
The sub-threshold current is one particularly
important type of leakage current.
(When the gate voltage is just below the
threshold voltage, the point of weak-
inversion)
Types of leakage current.
Weak inversion current (sub-threshold current).
Punch-through currents. (When the drain to source voltage gets
to be too high, the source and drain regions may be shorted.)
Gate oxide tunneling-- Hot carriers
(For short channels, electrons may accumulate into the gate oxide, leading to
changes in threshold conditions.)
Reverse-biased pn junctions
Drain-induced barrier lowering (Shift in threshold level to
increase in drain voltage-- higher current flow near cut-off when the drain
voltage increases)
Gate-induced drain leakage (As gate oxide layer becomes very
thin, channel current may leak into the gate-- non-ideal capacitor)
Subthreshold current
Subthreshold current:
I
DS
=
W
L
' I e
q(V
GS
V
T
) nkT
1 e
qV
DS
kT
( )
2 '
2 2
2
t
SB F
A S
V
N q
I |
|
c
+
=
SB F
V
n
+
+ =
|
2 2
1
I
DS
=
W
L
' I e
q(V
GS
V
T
) nkT
when V
ds
>> q/kT
log
10
I
DS
= log
10
W
L
' I
|
\
|
.
|
+
q
kT
V
GS
V
T
n
log
10
e
1
S
=
1
n
q
kTln(10)
S is called the sub-threshhold swing;
smaller values of S are desirable