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G. A. Petrako skii et al., !"#P $ett. 72, %& ('&&&) (. Mori)oto et al., *ature 380, 1+1 (1,,-)
Contents
Introduction
Colossal Magnetoresistance (CMR !aMn"# Me$Mn%-$S (Me & 'e( Cr Moti)ation
introduction
%0 "n applied e$ternal magnetic /ield /or sample( electrical resistance noticea1l, increase0
.0 "n applied e$ternal magnetic /ield /or sample and doped hole( electrical resistance noticea1l, decrease and phase change /rom paramagnetic to /erromagnetic0
introduction
!aMn"#
Manganese o$ides 2ith the cu1ic pero)skite structure0
Cr,stal structure
3ero)skite structure
electron state
#d4 (Mn#5 eg electrons are strongl, h,1ridized 2ith the o$,gen .p states( so eg electrons are conduction electron0 t.g electrons can 1e )ie2ed as localized spins 2ith S.0
energ, state o/ #d electron o/ Mn#5
introduction
!aMn"#
!aMn"# is Mott insulator0
Anti/erromagnetic insulator
Mott Insulator Spins are alternatel, up and do2n0 When coulom1 repulsion /or t2o electrons in a Mn is large( *lectrons cannot mo)e /reel,0
Carriers are doped in eg or1ital0 Su1stitute di)alent(. cation (Sr.5( Ca.5 etc0 /or tri)alent(# cation (!a#5
introduction
!a%-$Sr$Mn"#
+ou1le-e$change interaction
Spins are paralleled in di//erent or1ital 1, Hund7s rule0
eg electron can trans/er to Mn45( 1ecause energ, is not changed i/ an, eg electron is e$ist 2hich site0
(1 t.g electrons (localized spins are antiparalleled 8 eg electron cannot trans/er to Mn45( 1ecause to trans/er results in a loss o/ energ, o/ Hund7s rule0
introduction
!a%-$Sr$Mn"#
t.g spins are leant0 -he /ormula o/ trans/er integral (t is this0
*$ternal magnetic /ield aligns the t.g spins and reduces the carrier scattering 1, the local spins0 /erromagnetic phase is sta1ilized /or high temperature0
A steep rise o/ the magnetization o1ser)ed around %#: ;0 Tc 8 -he critical /erromagnetic transition temperature
- dependence o/ resisti)it, /or single cr,stal o/ (!a$Sr%-$ #Mn."90 -he resisti)it, 2ith the current parallel (a1) and perpendicular (c 0
introduction
Mn
Mn.5 ions are in the octahedral position s o/ the sul/ur cu1ic lattice0
introduction
Moti)ation
-o o1ser)e Colossal magnetoresistance o/ non-pero)skite Me$Mn%-$S (Me & 'e( Cr -o o1ser)e magnetic order o/ Me$Mn%-$S (Me & 'e( Cr
*$perimental method
sample 8 Me$Mn%-$S (Me & 'e( Cr = pol,cr,stal
$ o/ 'e is :0.>0 $ o/ Cr is :0?
measurement
A-ra, structural anal,sis 8monochromatic Cu K radiation
-emperature range %::@#:: ;
Result
'e:0.>Mn:09%S
-he conduction in the samples is o/ the semiconductor type 2ith thermal h,steresis0
Result
'e:0.>Mn:09%S
Result
Cr:0?Mn:0?S
-his sul/ide undergoes the anti/erromagnet/erromagnet transition at DD;0
-he nature is caused 1, Eahn-eller e//ect0
+iscussion
*lectrical and magnetic properties o/ Me$Mn%-$S are similar to those o1ser)ed /or !a%-$Sr$Mn"#0
analogous point the cu1ic lattice is distorted in the range o/ appeared CMR0 !aMn"# and MnS (not doping are Mott insulator0 A' semiconductor-'M metal are produced in cation-su1stituted !aMn"# ( or MnS 0
-he regions o/ anti/erromagnetic semiconductor and /erromagnetic metal coe$ist0 (1, MGss1auer data
H0I0 !ose)a et al0( 3h,s( Solid States .?( .%4. (%>C#
Summar,
Colossal magnetoresistance is o1ser)ed in non-pero)skite Me$Mn%-$S (Me & 'e( Cr 0
-his Me$Mn%-$S sample has little data0 So( this sample must 1e gi)en results and should 1e understood the magnetism mechanisms0
M, stud,
Me$Mn%-$S
-he less interspace o/ octahedral structure( the more increase electron trans/er0 Me$Mn%-$S (Me & 'e( Cr ma, appear metallic state0 "ne 2a, is ion su1stitution0
"ther 2a, J
I anticipate that CMR 2ill 1e o1ser)ed in Me$Mn%-$S (Me & 'e( Cr 1, pressure0