PRESENTED BYNAVDEEP SINGH CH8233

All two-dimensional flat nanocrystals have an overall size in the order of 10 nm. The synthesis of two-dimensional nanocrystals is usually achieved by self-assembly from solutions and the constituting elements of these systems are usually metals, from both the main or transition groups. Discoidal nanocrystals are typical flat building blocks. They are typically obtained by surfactantassisted synthesis or anisotropic crystal growth passing through colloidal systems.

Thin film growth involves nucleation and growth on the substrate or growth surface Crystallinity & microstructure of film is determined by nucleation
process 3 Basic nucleation modes Island growth Growth species are more strongly bonded to each other than to the substrate Islands coalesce to form a continuous film E.g. metals on insulator substrates, alkali halides, graphite and mica substrates Layer growth Growth species are bound more strongly to the substrate than to each other 1st complete monolayer is formed before the deposition of 2nd layer occurs Involves in situ developed stress due to lattice mismatch between the deposit and the substrate e.g. epitaxial growth of single crystal films Island-layer growth combination of layer growth and island growth

SAMs are molecular assemblies that are formed spontaneously by the immersion of an appropriate substrate into a solution of an active surfactant in an organic solvent.

Sol-gel processing

is widely used in the synthesis of inorganic and organic-inorganic hybrid materials is capable of producing nanoparticles, nanorods, thin films, and monolith. sol-gel films are made by coating sols onto substrates. Commonly used methods for sol-gel film deposition spin-coating dip-coatings spray ultrasonically pulverized spray

Semiconductor Bulk Nano atom particle 3d 2d 1d 0d

CB

LUMO
DOS

Band EF gap
VB HOMO

Energy

Size controlled band gap tuning Discrete Energy levels

A.P. Alivisatos, Science 271, 933 (1996)

Superlattice: alternating layers of small bandgap semiconductors (GaAs) interdispersed with layers of wide bandgap semiconductors (GaAlAs). The thickness of each layer is considerably smaller than the electron mean free path.
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Variation of electron energy in an MBE grown

The angle formed by a tangent to a flat surface of a drop of water at the point of contact (contact angle) is given in terms of the interfacial energies of the system by the Young equation:

AB AC cos c BC
AB= air/surface interfacial tension
AC=

water/surface interfacial tension

BC= air/water interfacial tension

Modulation of the structure on the length scale d (thickness of the layer in the superlattice) gives rise to the formation of new bands inside the original Brillouin zone . Electrons can pass freely from one small bandgap region to another without scattering.

Band splitting into sub-bands

cos c 1

Water/surface repulsion (large interfacial tension)

Water drop

Si Nanowires

Coated Si surface (planar)

Coated nanostructured surface (rough)

Roughening on the nanoscale can greatly increase hydrophobicity.