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Figure A.2 (a) An 8-pin plastic dual-in-line IC package, (b) A 16-pin surface mount package.
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Figure A.5 Cross sections of resistors of various types available from a typical n-well CMOS process.
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Figure A.11 Cross-sectional diagram of a symmetrical self-aligned npn SiGe heterojunction bipolar transistor (HBT).
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Figure A.14 A set of photomasks for the n-well CMOS inverter. Note that each layer requires a separate plate: (a), (d), (e), and (f) dark-field masks; (b), (c), and (g) clear-field masks.
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc. 16