Semi Cond Spin Tronic S

Department of Physics/CAPEM/LSRS
Semiconductor Spintronics:
Whats It All About?
ONR, DARPA and CAPEM
Bruce D. McCombe

Department of Physics and Center for Advanced
Photonic and Electronic Materials
University at Buffalo
The State University of New York
Buffalo, NY 14260
The Usual Suspects
(Collaborators)
University at Buffalo
H. Luo, X. Chen: growth (ideas) and structure
K.P. Mooney, F. Gasparini: magnetism
M. Na, C. Ruester: transport/magneto-transport
G. Kioseoglou, Y.L. Soo, S. Kim, Y.H. Kao: x-ray
M. Furis, G. Itskos, G. Kioseoglou, C. Meining, A. Petrou:
optics and magnetooptics
G. Comanescu: IR
Notre Dame University
Y. Sasaki, X. Liu, J.K. Furdyna: growth
Penn State University
S. J. Potashnik and P. Schiffer: magnetism and magnetotransport
DARPA Consortium
Organization (Consortium)
UB (lead Institution), Notre Dame U., U. of
Wuerzburg, Indiana U., Naval Research Lab.,
Vanderbilt U., U. of Texas, N.C.State U., WPI,
Penn State U.

Focus
III-Mn-V Semiconductors and their
Heterostructures (GaMnAs, GaMnSb, InMnAs)
Outline
Background What is Spintronics
Recent Developments -- Materials and Spin
Injection
Ferromagnetic III-Vs -- Materials/Physics ---
Problems
Our Approach -- Digital Alloys:GaSb/InAs with Mn
Some Selected Results - GaMnAs, GaMnSb
Summary and Key Issues for the Future
Spintronics
Conventional electronics: charge of electron used to
achieve functionalities e.g., diodes, transistors,
electro-optic devices (detectors and lasers.)
Spintronics: manipulate electron spin (or resulting
magnetism) to achieve new/improved functionalities --
spin transistors, memories, higher speed, lower power,
tunable detectors and lasers, bits (Q-bits) for quantum
computing.
Conventional Electronics
Metal Gate
n
+

n
+

Ohmic contact
Ohmic Contact
P-type Si
Oxide
Electron
Inversion layer
Metal Oxide Semiconductor Field Effect Transistor
MOSFET
Gate Voltage changes electron density
changes conductivity
Spintronics
Spin Valves, Spin transistors, Switches, Modulators, MRAM,.
Datta and Das, APL 56, 665 (1990)
Inject polarized spin from one FM contact -- modulate current by
modifying spin precession via Rashba effect (Asymmetry - spin-orbit interact.)
Depends on perpendicular electric field on 2DEG; other FM contact is analyzer
Spin Transistor
Schottky Gate FM Metal
FM Metal
InGaAs
Modulation Doped AlGaAs
2DEG
Spin
Analyzer
B
Spin
Injector
BUILDING BLOCKS FOR SPINTRONICS
I
Spin filter
I
Nonvolatile
Spin valve
FM
FM
I
Exch. Bias
Material
AF
hard
soft

New Ballistic Spin Filter Concept
NC STATE
UNIVERSITY
Quasi- 1D channels
from 2DEG, e.g.,
split-gate;
Back and front gates
to manipulate
SO-Interaction
T-shaped 2D
Structure
x
y
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.2
0.4
0.6
0.8
1.0
0
100
Fig. 2 Kiselev, Kim, Ballistic spin filter

S
p
i
n

p
o
l
a
r
i
z
a
t
i
o
n

(
%
)
T
r
a
n
s
m
i
s
s
i
o
n

(
p
e
r

c
h
a
n
n
e
l
)
Kinetic energy (in E
0
units)
Total
transmission
Total
polarization
T-structure -- Good
polarization, poor transmission

Asymmetric Square Ring
High Transmission
(approaching 100%) and high
polarization (60%)
Conventional approach external
magnetic field -- micromagnets,
ferromagnetic films, .
Alternative --- spin-orbit (SO)
interaction couples spin and orbital
degrees of freedom (Rashba)
Difference between
polarization flux in
+y and y directions
Courtesy of K. W. Kim
Polarized photons to spins
Photons modulate Magnetism
BUILDING BLOCKS FOR SPIN-
PHOTONICS
Spins to Polarized Photons
Why Semiconductor Spintronics?
He who controls magnetism (in semiconductors) rules
the world Dick Tracy, ca. 1940
Possible Revolutionary Advances
Very fast, very dense memory and logic at extremely low power
Spin Quantum Devices (Spin FETs, LEDs, RTDs)
Quantum Computing at Room T
Complete computer on a chip
Recent Work
UCSB - RT opt.- induced, long lived quantum-coherent spin
state (Terahertz freq. Response- transported with small elec. fields)
Ferromag. in GaMnAs and InMnAs Optically and
Electrically induced ferromag. (Japanese groups and others)
Ferromag. in GaMnAs, InGaMnAs, GaMnSb, etc. DIGITAL
ALLOYs (UB/UCSB)
Started by Munekata and Ohno (80s): IBM Japan
Initially not widely received -- materials pretty bad (still are)

III
1-x
Mn
x
Vs without precipitates (grown below 300
o
C)
Poor optical quality (no PL from LT GaAs)
All III
1-x
Mn
x
Vs are heavily p-type
No excitonic absorption from heavily doped samples
Mn is dopant (acceptor) in III-Vs; generally not desirable for alloying
Mn
2+

T
growth
< 300
o
C
T
growth
> 300
o
C
MnAs
III
1-x
Mn
x
V Random Alloys
(InMnAs and GaMnAs)
MBE Phase Diagram Ga
1-x
Mn
x
As
Random Alloys
H. Ohno , J. of Magnetism and Magnetic Materials 200 (1999)
Mn composition x
S
u
b
s
t
r
a
t
e

t
e
m
p
e
r
a
t
u
r
e

(
o
C
)

0
0.02 0.04 0.06
100
200
300
Insulating (GaMn)As Insulating (GaMn)As
Roughness
MnAs Precipitates
Polycrystalline
Metallic (GaMn)As
0.08
- Low concentration (< 1%
insulating, not FM)
- Higher Mn concentration
(1% - 7% - metallic, FM)
Clustering of a few Mn ions
(not precipitates)
AF exchange between Mn ions
overcome by carrier-mediated
exchange
- Even Higher Mn Conc.
(> 8% - insulating, not FM)
Complex situation Disorder,
Residual Magnetism, self-
compensation
MBE-grown GaMnAs Random Alloys
Furdyna/Schiffer - U. of Notre Dame
Ga-Mn-As
Ferromagnetic from about
3% - 7% Mn
I-M-I Transitions
Carrier mediated mechanism
- Large density of holes (comes
with the territory - Mn on Ga
sites is an acceptor)
Highest T
C
so far -- 110 K
T
C
~ 55 K
Random alloy -- 5.1% Mn
M
R

H
C

Mechanism: Carrier-Mediated
Exchange Interaction
RKKY (Carrier Mediated Exchange)
Mn
++
- Mn
++
Direct interaction is AF
RKKY -- free carrier mediated Interaction between Mn
++

can be either FM or AF
FM Mn
++
- Mn
++
interaction mediated by holes depends on Mn and
carrier (hole)densities
Exchange Interaction Coulomb interaction plus Pauli Principle
can favor either: ferromagnetic or antiferromagnetic exchange)
Mn
++
Separation
1/2k
F

AF
FM
FM
Average separation between Mn ions
Fermi wavelength of holes
Length Scales
Issues, Approach and Goals
Along the way
Magnetotransport and Magnetic measurements
Learn about basic physics of FM
Effects of dimensionality
Random Alloys
MnAs Precipitates
Poor Structural/Optical Properties
Issues
III-V/Mn digital alloys (MBE/ALE)
Approach/Goals
Increase average Mn concentration and improve structural quality
2-D spin systems/carriers confined enhance T
C

Improved Optical and transport properties (ordered alloy)
Whats Needed?
Ferromagnetic Materials (semiconductors)
Spin Polarizers/Aligners
Spin Injectors (and Long Spin lifetimes)
Means of manipulating spins (B, E, light)

II-Mn-VI/III-V Spin Polarizer
) 3 ( ) 3 (
) 3 ( ) 3 (
| + + |
| + + |
+ + +
+ +
=
n n n n
n n n n
P
opt
GaAs
+1/2 m
J
-1/2
-3/2
3 1
-1/2 +1/2 +3/2 m
J

1 3
Optical Polarization
x - GaAs
- d
SM
= 300 nm
- - d
SM
= 3 nm
V - d
SM
= 0
Wuerzburg Group
Nature 402, 787 (1999)
NRL/UB
PR B (2000)
AlGaAs/GaAs
QW
CB
ZnBeMnSe
VB
CB
VB
B
Electron Spin Polarization
~ 90%
GaN
ZnO
GaAs
GaSb
InAs
Predicted Curie Temperatures
Room
Temp
Dietl et al., Science , (2000)
Weird
Materials
with low
T
C

The 6.1 A Materials
Why Interesting?
Energy Gaps -- Visible (red) to mid-
IR
Unusual Band Alignment -- Type II
Staggered to Type II Broken gap
Range of unique devices
- IR detectors and lasers
- Unusual Resonant tunneling
diodes (RITDs)
- High Electron Mobility Transistors
(HEMTs)
- Possible Spintronic
Applications

Multifunctional Materials

Interesting and Unusual Physics
Spatially Separated Electrons and Holes
What Are They? (III-Vs)
Photo-induced Ferromagnetism
Munekata et al, PRL 78, 4617 (1997) (InMnAs)
Basic idea
Heterostructure Band offsets Holes go to Incipient Ferromagnetic Material
Mechanism for Ferromagnetism is Carrier-induced
Type-II Band Alignment
AlGaMnSb
No Illumination
InAs
E
g
(InAs) < hv < E
g
(AlGaMnSb)
InAs
AlGaMnSb
hv
Ferromagnetic Resonant Interband
Tunneling Diode (FRITD)
Unique Band
Alignment -- Novel
Device Structures
Possible
Carriers (electrons)
have high mobility and
longer spin-coherence
lifetimes
Spin Polarizer or Spin
Filter -- can be bias
controlled
VB
CB

E
Fh
L1'
L1
InAs
collector
InAs
emitter
Ferro-
magnetic
GaMnSb
AlSb AlSb
Digital alloys 2 Types
Atomic Layer Epitaxy
Mn
GaAs:Mn
As or Sb
Ga or In
GaAs:GaMn
Mn
Ga or In
As or Sb
GaMnAs Digital Alloys

TEM of GaMnAs Digital Alloys
(Two series of baseline samples)
GaAs Spacer 8 monolayers
(~ 2.3 nm)
8 seconds exposure ALE
(~ 0.2 monolayer of Mn)

Clear Superlattice Structure

No evidence of 3D Clusters
10 nm
Series of identical samples
parameter varied is Mn exposure time
from 1 sec to 22 sec (0.02 - 0.5 ML)
Magnetization Measurements
Easy Axis in-plane
H
C
~ 100 Oe
~ 0.2 ML Mn
M
R
< 1/3 M
R,in-plane

Summary of Magnetic
Measurements
Local (defect) structure important 2D
lslands, AF spin-spin coupling, phases?
Hopping Conductivity in all samples

ESD = Effective Spin density
from saturation Magnetization
(S = 2.5, g = 2)
5 10 15 20 25 30 35 40 45
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
45
50
T
C

(
K
)
T
C

EDS
E
D
S

(
1
0
1
3
/
c
m
2
)
Mn % in layer
ESD/T
C

Correlated
Different Growth
Conditions
1 2 3 4 5 6 7 8 9 10 11 12
5
10
15
20
25
30
35
40
45
50

C
u
r
i
e

T
e
m
p
e
r
a
t
u
r
e

(
K
)
Effect Spin Density (10
14
/cm
2
)
T
C

(
K
)

ESD (10
13
/cm
2
)
Anomalous Hall Effect
R
hall
= R
0
B + R
S
M
Normal
(dominates
at high B)
Anomalous
Magnetic Moments plus spin-orbit
interaction
Skew Scattering (R
S

sheet
)
Side-jump Scattering (R
S

2
sheet
)
R
H

B
B
I
V
H

-8 -6 -4 -2 0 2 4 6 8
1000
2000
3000
4000
5000
6000
7000
8000
T
C
approx. 35K
Sample 01222C
52K
12K
21K
32K
40K
R
x
x
(
o
h
m
s
)
Magnetic Field (T)
MagnetoTransport Measurements
Digital GaMnAs Alloys
Thermally activated resistance
Samples in this series all Ferromagnetic
8 sec exposure, Higher flux -- 0.4 ML

-8 -6 -4 -2 0 2 4 6 8
-150
-100
-50
0
50
100
150

52K
40K
21K
12K
32K
R
hall
vs.B)
sample 01222C
R
h
a
l
l
(
O
)
Magnetic Field (T)
Anomalous
Hall Effect
Large Neg.
Mag. Res.
Pos. MR
Correlation between Positive
Magnetoresistance and FM
8 sec Mn -- 0.4 ML
Bat Ears
Thermally activated resistance
Samples in this series all Ferromagnetic
10 sec exposure, lower flux -- 0.5 ML

-8 -6 -4 -2 0 2 4 6 8
1
10

45K
40K
30K
20K
10K
R
sheet
vs. B
Sample 01222B
4.6K
R
s
h
e
e
t

(
k
O
)
Magnetic Field (T)

-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
-500
-400
-300
-200
-100
0
100
200
300
400
500

45K
40K
30K
20K
10K
4.5K
R
hall
vs. B
Sample 01222B
R
h
a
l
l
(
O
)
Magnetic Field (T)
Anomalous
Hall Effect
Pos. MR
Dominated by
R
sheet
B dep.
-- Digital GaMnAs Alloys
Lower flux, short exposure -- 0.15 ML

-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
-400
-200
0
200
400
10K
15K
50K
40K

20K
30K
R
h
a
l
l
(
O
)
Magnetic Field (T)
R
hall
vs.B
Sample 01221A
Anomalous
Hall Effect

-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
1
10
15K
50K
40K
30K

20K
10K
R
s
h
e
e
t
(
k
O
)
Magnetic Field
R
sheet
vs. B
Sample 01221A
Pos. MR
(T)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
8
9
10
11
12

1/T
1/4
1/T
1/3
1/T
1/2
1/T
L
n

(
R
s
h
e
e
t
)
1/T
n
Ln (R
sheet
) vs. 1/T
n
Sample 01221A
T Dependence of Sheet Resistance
0.15 ML Sample (shorter exposure)
T
C

Critical
Scattering
Temperature Dependence of
Sheet Resistance Digital Alloys
0.1 0.2 0.3 0.4 0.5 0.6 0.7
8.0
8.5
9.0
9.5
10.0
10.5
1/T
1/4
01222B Sample
1/T
1/3
1/T
1/2
L
n
(
R
s
h
e
e
t
)
T
-n
(K
-n
)
10 sec exposure, Lower flux
Similar resistance, Similar magnetotransport,
Similar Curie T
C
, Different activation behavior
8 sec exposure, Higher flux
0.1 0.2 0.3 0.4 0.5 0.6 0.7
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
T
o
1/4
=8.2(K
1/4
)
1/T
1/4

T
o
1/3
=7.6(K
1/3
)
T
o
1/2
=7.8(K
1/2
)
01222C Sample
1/T
1/3

1/T
1/2

L
n
(
R
s
h
e
e
t
)
(I/T)
-n
(K
-n
)
T
-n
(K
-n
)
Summary - GaMnAs Digital Alloys
Systematic study of digital GaAs:Mn alloys Mn layer
coverages < 0.5 monolayer -- Good Structural
properties (TEM, X-ray)
ESD and T
C
correlated -- maximum T
C
vs. Mn layer
coverage local structure important -- Clustering, AF
spin-spin coupling, phases?
Anomalous Hall Effect. Magnetoresistance -- initially
positive followed by large negative MR in FM regime
Thermally activated (hopping) conductivity in all
samples -- lnR T
-1/2
, T
-1/4
observed
Modified mechanism for FM -- no free holes
GaMnSb Digital Alloys
GaMnSb Digital Layers
MBE/ALE - Growth temperature = 250
o
C
Vary Mn layer spacing
Vary Mn layer coverage
GaSb
cap
GaAs (100)
substrate
GaSb/Mn AlSb
GaSb
Structure
-1000 -500 0 500 1000
-8
-6
-4
-2
0
2
4
6
8
T = 5K
B in plane

M

(
1
0
-
6

e
m
u
)
Magnetic Field (T)
SQUID
Measurements for
a sample with
Easy Axis in-plane
20 nm
TEM
Good structural
quality no
evidence of
precipitates
Squid Magnetization
Measurements
-15 -10 -5 0 5 10 15
-8
-6
-4
-2
0
2
4
6
8
Magnetic Field (10
-2
T)
M

(
1
0
-
5

e
m
u
)
5 K
100K
285 K
(a)
Changing Hysteresis Loops up
to Room T
0 50 100 150 200 250 300 350 400
1.0x10
-7
2.0x10
-7
3.0x10
-7
4.0x10
-7
5.0x10
-7
6.0x10
-7

M

(
e
m
u
)
T(K)
15 ML GaSb spacers
0.5 ML Mn
T
C
~ 50 K
Magnetization
at Room T
GaMnSb Digital Alloys-
Magnetotransport
0.5 ML Mn; 10 ML GaSb Spacer
-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
-2
0
2
290K
200K
100K
p = 1.95 x 10
13
cm
-2
/ Mn layer
100K
70K
20K
60K
50K
30K
10K
4.5K

40K
R
h
a
l
l

(
O
)
Magnetic Field (T)
Sample 10630J
Hall Resistance
Large AHE
Persists to HiT
Magnetoresistance
-8 -6 -4 -2 0 2 4 6 8
36
38
40
42
44
46
290K
70K
Sample 10630J (GaSb:Mn)

Magnetic Field (T)
R
s
h
e
e
t

(
O
)
200K
100K
60K
50K
40K
30K
20K
10K
4.5K
Crossover
from neg.
to Pos. MR
T
C
about
50 K
Arrott Plot from
Magnetotransport
0 50 100 150 200 250 300
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
"M
Sat
" vs. T from Arrot Plots (McC)
Sample 10630J
M
S
a
t

(
a
r
b
.

u
n
i
t
s
)

T (K)
Magnetization
Persists to very
High T
GaMnSb Digital Alloys-
Magnetotransport
-8 -6 -4 -2 0 2 4 6 8
43
44
45
46
47
48
49
50
51
52 320K
200K
100K
70K
60K
50K
40K
30K
20K
10K

4.9K
R
s
h
e
e
t

(
O
)
Magnetic Field (T)
10630B (GaMnSb)
-8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8
-4
-3
-2
-1
0
1
2
3
4
p=3.5*10
13
/cm
2
per Mn layer
320K
200K
60K
70K
100K
30K
50K
40K
20K
10K
4.9K

R
H
a
l
l

(
O
)
Magnetic Field (T)
10630B (GaMnSb)
Magnetoresistance Hall Resistance
Magnetic Force Microscopy
Before annealing
500nm
500nm
After annealing at 500 C
3D Precipitates
Possible Model
Small (< 20-30 nm) 2D metallic
FM Islands of MnSb (T
C
> 500 K)
embedded in Random Matrix
of Mn Substituting for Ga
Large Hole density (about 10%
of Mn density) due to random
isolated Mn acceptors near the
MI transition -- holes interact
with magnetic islands at high T --
Two critical temperatures
Mn ion
MnSb Island
A Single
Layer

Calculations of Curie
Temperature in Digital Alloys
Large VBO localizes hole
wavefunctions in vicinity
of ferromagnetic layers
MFT predicts T
c
up to RT
GaMnAs/GaAs SL: Large
T
c
only if P > 10
20
cm
-3

GaMnAs/Al(Ga)As SL:
Strong T
c
enhancement
even for P < 10
19
cm
-3
!
Digital Layers are Good
Strongest
Hole
Confinement
10
18
10
19
10
20
0
50
100
150
200
250
300
350
<x
Mn
> = 5%
9 ML AlAs/
1 ML Ga
0.5
Mn
0.5
As SL
9 ML GaAs/
1 ML GaMnAs
SL
Bulk
Ga
0.95
Mn
0.05
As
C
u
r
i
e

T
e
m
p
e
r
a
t
u
r
e

(
K
)
Average Hole Density (cm
-3
)
EBOM with self-consistent mean-
field theory

Courtesy of Jerry Meyer, NRL
Summary/Future Directions
Promising Results on Digital-layer Alloys
(particularly GaSb-based)
Interesting Transport Results -- Activated (2D?)
Conductivity -- Localized holes -- Ferromagnetic
Basic mechanisms
Understand High T behavior of GaMnSb
Correlation between Effective Spin Density and
T
C
Growth conditions very important
Heterostuctures (III-Mn-IIIV) for Devices
Interfaces important and need to be studied
B In-plane
B ~ Perpendicular to plane
Easy Axis in- plane
H
C
~ 100 Oe
Temperature Dependence of
Sheet Resistance
0 50 100
44
46
48
50
52
R
sheet
vs. Temperature with B
Sample 10630B (GaSb/Mn)
24sec Mn

Temperature (K)
R
s
h
e
e
t
(
?
)
0T
1T
2T
3T
4T
5T
6T
7T
0 50 100
36
38
40
42
44
46
48

10630J (20sec Mn)
R
s
h
e
e
t
(
?
)
Temperature (K)
0T
1T
2T
3T
4T
5T
Crossover
Crossover
Magnetotransport Measurements
Digital GaMnSb Alloys
-8 -6 -4 -2 0 2 4 6 8
8
9
10

40K
30K
20K
Sample 01223M (GaSb:Mn)
10K
4.3K
R
s
h
e
e
t
(
O
)
Magnetic Field(T)
-8 -6 -4 -2 0 2 4 6 8
-1.8
-1.2
-0.6
0.0
0.6
1.2
1.8
2.4

40K
30K
10K
20K
4.3K
Sample 01223M (GaSb:Mn)
R
h
a
l
l
(
O
)
Magnetic Field(T)
T
G
= 273C, 50 repetitions; 9 ML
GaSb spacer; ~ 0.2 ML Mn; p-type

Neg.
Magnetores.
much smaller
than
GaMnAs

MBE GaAs:Mn epilayer - doped at high density
(T
S
= 590 C) Metallic: n = 2.4 x 10
18
cm
-3

Infrared Absorption
Measurements
Sample 01223C
95 100 105 110 115 120 125 130 135 140 145
95
96
97
98
99
100
101
102
low Mn density
77 Kelvin 10222A
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
m
i
t
t
a
n
c
e
Photon Energy (meV)
95 100 105 110 115 120 125 130 135 140 145
96
97
98
99
100
101
102
103
2.5 x 10
18
cm
-3
77 K 1223C
N
o
r
m
a
l
i
z
e
d

t
r
a
n
s
m
i
t
t
a
n
c
e
N
o
r
m
a
l
i
z
e
d

T
r
a
n
s
m
i
t
t
a
n
c
e

Photon Energy (meV)
01223C
77 K
77 K 10222A
n = 2.5 x 10
18
cm
-3

Lo Mn Density
GaAs:Mn diffused (Linnarsson et al.
PRB 55, 6938 (1997).
MBE GaAs:Mn epilayer low density (T
S
= 590
C) semiconducting: p = ?
Impurity Band Transitions ?
Photoluminescence Measurements
Random GaAs:Mn
0 5 10 15 20 25 30
11050
11100
11150
11200
11250
11300
11350
11400
11450
11500
11550
T = 4.2K
S = 00618A less Mn
E
n
e
r
g
y

(
c
m
-
1
)
Magnetic Field (T)
10400 10600 10800 11000 11200 11400 11600 11800 12000 12200
0
20000
40000
60000
80000
100000
HeNe = 5mW
window 11.300cm
-1
B = 0T
S = 00618A
N
o
.

o
f

c
o
u
n
t
s
ENERGY (cm
-1
)
10400 10600 10800 11000 11200 11400 11600 11800 12000 12200
0
20000
40000
60000
80000
HeNe = 5mW
window 11.300cm
-1
B = 30T
S = 00618A
N
o
.

o
f

c
o
u
n
t
s
ENERGY (cm
-1
)
Data taken at NHMFL
Mn
Acceptor
LO
Random GaAs:Mn
11150 11200 11250 11300 11350 11400 11450 11500 11550
0
5000
D-Mn
CB - Mn
500/8000/500
g = 600 gr/mm
T = 10K
laser = 632.8nm/5mW
tau = 1 sec
S = 000618B More Mn
I
n
t
e
n
s
i
t
y
(
#

o
f

c
o
u
n
t
s
)
Energy(cm
-1
)
11950 12000 12050 12100 12150 12200 12250 12300 12350 12400 12450
0
500
1000
1500
2000
2500
3000
BULK
CB - C(acc)
500/8000/500
g = 600 gr/mm
T = 10K
laser = 632.8nm/5mW
tau = 1 sec
S = 000618B More Mn
I
n
t
e
n
s
i
t
y
(
#

o
f

c
o
u
n
t
s
)
Energy(cm
-1
)
Band Edge Region
Mn Acceptor Region
Mn Acceptor Region
11150 11200 11250 11300 11350 11400 11450 11500 11550
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
500/8000/500
g = 600 gr/mm
T= 10K
laser = 632.8nm/5mW
tau = 10 sec
S = 000614B - 12monolayers
I
n
t
e
n
s
i
t
y
(
#

o
f

c
o
u
n
t
s
)
Energy(cm
-1
)
Band Edge Region
11950 12000 12050 12100 12150 12200 12250 12300 12350 12400 12450
0
5000
10000
15000
BULK
CB-C(acc)
500/8000/500
g = 600 gr/mm
T= 10K
laser = 632.8nm/5mW
tau = 10 sec
S = 000614B - 12monolayers
Energy(cm
-1
)
REFLECTIVITY of GaMnAs DIGITAL ALLOYS
12100 12150 12200 12250 12300 12350
12 monolayers GaAs
R
e
f
l
e
c
t
a
n
c
e
(
a
.
u
.
)
Energy(cm-1)
8 monolayers GaAs
16 monolayers GaAs
Optical, magnetic and transport
properties are Correlated
Curie temperature around 40 K
Highly resistive; Sheet hole density
~ 2-3 x 10
10
cm
-2
at room T
Curie temperature around 30 K
Highly resistive; cant estimate
sheet hole density
Not Ferromagnetic; insulating
Dependence on Bonding
-1000 -500 0 500 1000
-1.0x10
-5
-5.0x10
-6
0.0
5.0x10
-6
1.0x10
-5
As/Mn/As
Ga/Mn/Ga
M
a
g
n
e
t
i
c

M
o
m
e
n
t

p
e
r

A
r
e
a

(
e
m
u

/

m
m
2
)
Magnetic Field (Gauss)
Digital Alloys
Low concentration (< 1% - insulating; not Ferromagnetic)
- Magnetic properties determined by spins of individual Mn
2+
(S = 5/2 )
- Paramagnetic

Higher Mn concentration (between 1% and 8% - metallic;
Ferromagnetic)
- Clustering of a few Mn ions (not precipitates which are larger)
- Antiferromagnetic exchange between Mn ions overcome by carrier-
mediated exchange

MAGNETISM in Ga-Mn-As
(Random Alloys)
Even Higher Mn Concentration ( > 8% - insulating; not
Ferromagnetic)
- Complex situation Disorder; Residual Magnetism; self-
compensation
GaMnAs Phase Diagram
(H. Ohno , J. of Magnetism and Magnetic Materials 200,(1999))
S
u
b
s
t
r
a
t
e

T
e
m
p
.

(
o
C
)

0
0.02 0.04 0.06
100
200
300
Mn composition x
Insulating (GaMn)As
Insulating (GaMn)As
Roughness
MnAs Precipitates
Polycrystalline
Metallic (GaMn)As
0.08
Spin Injection
Spin injection into semiconductors
Abstract
Spin injection (spin polarized current) results from the
passage of a current through a contact between a ferromagnet
and a semiconductor. Depending on the type of contacts, either
the majority or the minority carriers may be polarized. An
analysis is made of the influence of a magnetic field on such
spin injection and conditions for its observation are discussed.
Soviet Physics - Semiconductors 10, 698 (1976).
A. G. Aronov and G. E. Pikus
B. P. Konstantinov Institute of Nuclear Physics
and A. F. Ioffe Physicotechnical Institute
Academy of Sciences of the USSR, Leningrad

Substrates: (100) GaAs
Materials/Structures: 8-16 ML GaAs/4 ML MnGa
Growth temperature: 275
o
C
Deposition rate: monitored with RHEED oscillations
Growth Mode: MBE for GaAs/Atomic Layer Epitaxy for MnGa
GaAs/MnGa Superlattices
4 ML of MnGa (2 periods of Mn
and Ga depositions)

substrate
GaAs
InSb interface bonds
GaAs Interface Bonds
Two types (and combinations) of Interfaces: InSb and GaAs
Can Control Type During Growth
Interface type affects Electrical and Optical Properties
GaSb
GaAs
Interface Formation in InAs/GaSb
InAs
InAs
GaSb
InSb
Interface Effects on Band coupling
The k p coupling across the interface depends on Overlap Integral of
the electron and hole subband envelope functions
InAs GaSb GaAs
0.3 nm
0.81eV
0.15eV
0.45eV
CB
VB
InAs GaSb InSb
0.3 nm
0.81eV
0.15eV
0.45eV
CB
VB
Very simple(minded) Picture
Interface layer
-- additional barrier
Interface layer
-- lower barrier
Our Approach III-V/Mn digital alloys
- Increase Mn concentration and improve structural quality
- 2-D spin systems and interlayer coupling
- Optical and transport properties in ordered alloy (in 1D)
systems
Intrinsic Problem :
- Presence of precipitates
for high Mn
concentrations

Past lessons
- o-doping is a highly
effective method for
increased doping
concentration
- Digital alloys result in
high quality materials
Mn INCORPORATION
TEM of GaMnSb Digital Alloy
20 nm
High resolution
Low resolution
5 nm
R vs. T: GaMnAs Digital Alloy
(16 ML GaAs/<1 ML Mn)
Ferromagnetic up to
About 40 K
0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
12
14
16
18
20
T
0
1/2
=68K
1/2
l
n
(
R
4
7
)
1/T
1/2
(1/K
1/2
)
278 K
35 K
exp{T
0
/T}
1/2
for variable-range
hopping
Samples are all insulating
(resistance vs.
Temperature)
Behavior observed over wide
temperature range
MATERIALS ISSUES
Poor understanding of
spin polarization
(Complex Valence Bands)
Poor spin injection (2%)
Holes heavily
compensated by defects
Poor optical response
Poor crystal quality
Low Curie Temperature
Mn is a p-type dopant for III-Vs (good and bad)
Low growth temperature required (275
o
C)
ESD = Effective Spin density
from saturation Magnetization
(S = 2.5, g = 2)
5 10 15 20 25 30 35 40 45
5
10
15
20
25
30
35
40
45
50
5
10
15
20
25
30
35
40
45
50
T
C

(
K
)
T
C

EDS
E
D
S

(
1
0
1
3
/
c
m
2
)
Mn % in layer
Correlated
Behavior
0.0 0.1 0.2 0.3 0.4 0.5
[(GaAs)
8
Mn]
50
L
o
g

(
R
e
f
l
e
c
t
i
v
i
t
y
)

(
a
r
b
.

u
n
i
t
s
)
q
z
(
-1
)
[(GaAs)
12
Mn]
50
[(GaAs)
16
Mn]
50
X-RAY REFLECTIVITY
Weakly ferromagnetic
sample -- 12- monolayer
GaAs spacers -- shows
best crystal quality
Periods of digital
alloys from Bragg
peaks agree well with
thickness measured
in situ
Magnetization (Squid)
Easy Axis in-plane
Approach III-V/Mn and III-V/GaMn digital alloys
Anticipated Outcomes
Increased Mn concentration and improved structural quality
Quasi 2-D carrier system in region of ion spins enhanced T
C

Improved Optical and transport properties (ordered alloy)
Materials Issues
Precipitates for high Mn
concentration
Poor Structural/Optical
Properties
Past Lessons
o-doping highly effective for
increasing concentration
Digital alloys result in
high quality materials
III
1-x
Mn
x
Vs for Spintronics

Semi Cond Spin Tronic S

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