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EECS 277A
Aishwarya Sankara 17723777
4/24/2013
Today
What is SOI? Characteristics of SOI Fabrication methods Basic categorization Electrical anomalies Advantages and Disadvantages
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What is SOI?
-SOI Silicon-onInsulator -Si layer on top of an insulator layer to build active devices and circuits. -The insulator layer is usually made of SiO2
4/24/2013 UNIVERSITY OF CALIFORNIA, IRVINE
Characteristics
Include: - High speed - Low power - High device density - Easier device isolation structure
4/24/2013 UNIVERSITY OF CALIFORNIA, IRVINE
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Categorization
-Categorization based on the thickness of the silicon film. -The first is a partiallydepleted device and the latter is a fully-depleted device.
-Each has its own advantages and disadvantages. -PD device threshold voltage is insensitive to film thickness. -FD device has reduced short channel and narrow channel effects.
4/24/2013 UNIVERSITY OF CALIFORNIA, IRVINE
Electrical anomalies
Floating-body effect: -Usually seen in Partially-Depleted devices. - As shown in figure, the MOS structure is accompanied by a parasitic bipolar device in parallel.
-The base of this device is floating.
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Electrical anomalies
Kink Effect: -Sudden discontinuity in drain current. -Seen when the device is biased in the saturation region. -The bipolar device is turned on. Solution: -Provide a body contact for the device.
- Use FD devices.
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Electrical anomalies
Self-heating effect: Thermal insulation is provided by the oxide surface. Heat dissipation is not efficient. This happens only when there is logic switching in the device.
In fully-depleted devices, the threshold voltage is sensitive to the thickness of the silicon film. Manufacturing process is comparatively difficult.
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Advantages of SOI
Suitable for high-energy radiation environments. Parasitic capacitances of SOI devices are much smaller.
No latch-up.
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Advantages
Easier device isolation
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Disadvantages
Major bottleneck is high manufacturing costs of the wafer. Floating-body effects impede extensive usage of SOI. Device integration dopant reaction with the oxide surface. Electrical differences between and SOI nad bulk devices.
4/24/2013 UNIVERSITY OF CALIFORNIA, IRVINE
Conclusion
Due to its characteristics, SOI is fast becoming a standard in IC fabrication. Several companies have taken up SOI manufacturing.
References
J. Kuo, Low- Voltage SOI CMOS VLSI Devices and Circuits. New York, John Wiley, Sept 2001. J.Kuo, CMOS VLSI Engineering(SOI). Kluwer Academic Publishers, 1998. Vivian Ma, SOI VS CMOS. University of Toronto. www.google.com www.chips.ibm.com
THANK YOU!
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