Fabrication of MOSFET

Fabrication process of a simple metal oxide semiconductor (MOS) transistor

polysilicon gate metal connection to gate doped silicon metal connection to drain

top nitride
metal connection to source

field oxide oxide gate drain gate oxide oxide source silicon substrate

The manufacture of a single MOS transistor begins with a silicon substrate.

silicon substrate

A layer of silicon dioxide (field oxide) provides isolation between devices manufactured on the same substrate.

field oxide

oxide silicon substrate

Photoresist provides the means for transferring the image of a mask onto the top surface of the wafer.

photoresist oxide silicon substrate

Ultraviolet light exposes photoresist through windows in a photomask.

Ultraviolet Light
Chrome plated glass mask

Shadow on photoresist

Exposed area of photoresist photoresist oxide silicon substrate

Ultraviolet light exposes photoresist through windows in a photomask.

Ultraviolet Light
Chrome plated glass mask

Shadow on photoresist

Exposed area of photoresist photoresist oxide silicon substrate

Exposed photoresist becomes soluble and can be easily removed by the develop chemical.

Exposed area of photoresist Unexposed area of photoresist

photoresist oxide
silicon substrate

Unexposed photoresist remains on surface of oxide to serve as a temporary protective mask for areas of the oxide that are not to be etched.
Shadow on photoresist photoresist

photoresist

oxide silicon substrate

Areas of oxide protected by photoresist remain on the silicon substrate while exposed oxide is removed by the etching process.

photoresist

oxide silicon substrate silicon substrate

oxide

The photoresist is stripped off -revealing the pattern of the field oxide.

field oxide

oxide silicon substrate silicon substrate

oxide

A thin layer of oxide is grown on the silicon and will later serve as the gate oxide insulator for the transistor being constructed.

thin oxide layer

gate oxide

oxide silicon substrate

oxide

The gate insulator area is defined by patterning the gate oxide with a masking and etching process.

gate oxide

oxide silicon substrate

oxide

Polysilicon is deposited and will serve as the building material for the gate of the transistor.

gate oxide

gate oxide polysilicon oxide silicon substrate oxide

The shape of the gate is defined by a masking and etching step.

polysilicon gate

ultra-thin gate oxide

oxide

gate gate
silicon substrate

oxide

Dopant ions are selectively implanted through windows in the photoresist mask.
ion beam

Scanning direction of ion beam implanted ions in active region of transistors Implanted ions in photoresist to be removed during resist strip. photoresist

oxide

gate gate source

drain silicon substrate

oxide

The source and drain regions of the transistor are made conductive by implanting dopant atoms into selected areas of the substrate.

doped silicon

oxide source

gate gate
drain silicon substrate

oxide

A layer of silicon nitride is deposited on top of the completed transistor to protect it from the environment.

top nitride

gate source drain silicon substrate

Holes are etched into selected parts of the top nitride where metal contacts will be formed.
contact holes

gate source drain silicon substrate

Metal is deposited and selectively etched to provide electrical contacts to the three active parts of the transistor.
metal contacts

oxide

gate drain

oxide

source silicon substrate

Completed structure of a simple MOS transistor

polysilicon gate metal connection to gate doped silicon metal connection to drain

top nitride
metal connection to source

field oxide oxide gate drain gate oxide oxide source silicon substrate