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A MOSFET Transistor
Source Drain
Gate
Drain
Source
Gate
Substrate
Sub-Threshold
VT
250
200 150 100 50 0 0 0.5 1
Ith
In log-scale, we have an exponential dependence
VT
1.5
2.5
3.5
4.5
0.4
0.6
0.8
1.2
1.4
1.6
1.8
MOS Electrostatics
Vfb
Condition is called flatband --- the voltage when this occurs is called flatband This state is the baseline operating case --- a capacitive divider has one free parameter
MOS Electrostatics
Depletion Condition --- gate charge is terminated by charged ions in the depletion region
MOS Electrostatics
Inversion --- further gate charge is terminated by carriers at the silicon--silicon-dioxide interface
MOS-Capacitor Regions
Qs = e
(Y - Vs)/UT
Qs = ln( 1 + e
No recombination 0 0 0 dn d Dn 2 = Dn +G-R 2 dt dx
d n Dn 2 = 0 dx
Dn = Ax + B
nsource e - SC / uT
SC = VS - dC = Vd -
ndrain e
0 l nsource - ndrain dn = qDn J = qDn dx l
- dC / uT
varies as kVG
(e( I=I
0
kVg -VS ) /U T
-e
(kVg -VS )/ uT
-e
(kVg -Vd )/ uT
)
)
-V / u - / kV / u I DS = I 0 e G T e S T - e VD uT
= I 0e
(kVg -VS )/ uT
(-e ( 1
(
- Vd -VS )/ uT
= I 0 e ( kV G -VS ) / uT 1 - e -Vds / uT = I 0e
( kV G -VS ) / uT
(kVg -VS )/ uT
-e
(kVg -Vd )/ uT
)
)
-V / u - / KV / u I DS = I 0 e G T e S T - e VD uT
= I 0e
(kVg -VS )/ uT
(-e ( 1
(
- Vd -VS )/ uT
Subthreshold MOSFETs
10
-6
nFET
10
-7
pFET
S
D G S
10
-8
B
D
10
-9
10
-10
k = 0.58680 Io = 1.2104fA
0.45 0.5 0.55 0.6 0.65 0.7 Gate voltage (V) 0.75 0.8 0.85 0.9
10
-11
0.4
0.5
0.4 0.3
VT = 0.86
0.2
0.1 0.4
0.5
0.6
0.8
0.9
10
-8
10
-9
UT = 25.84mV
10
-10
10
-11
10
-12
k = 0.545
0.6 0.65 0.7 0.75 Source voltage (V) 0.8 0.85 0.9
Drain Characteristics
Id(sat)
Rout
GND
Width of depletion region depends on doping, not L Might expect Vo to linearly vary with L
Qualitative Above-Threshold
I = (K/2k)
CT = CD + Cox
(k = Cox / CT)
= (1 / CT ) d Q(x) dx
I = (m / CT ) Q(x)
d Q(x) dx
I L = (m / 2 CT ) Q(x)2
|Q
I = (m / 2 CT ) ( 1 / L) Qs2
I = (m CT / 2 ) ( 1 / L) ( k(Vg - VT) - Vs) 2 K = m Cox (W/L) I = (K/2k)
-Q )
d 2
- ( k(V
- VT) - Vd)2 g
MOSFET Equations
When ignoring back-gate effects (we often do): k=1 I = (K/2) ( (Vg - VT - Vs)2 - (Vg - VT - Vd) 2 )
Above-Threshold:
(Vd > Vg - VT )
I = Is e Subthreshold:
Vgs/UT
(1 e
-Vds/UT
)
Vgs/UT
Active Region
Active Region
Saturation Region
0.5
1.0
1.5
2.0
MOSFETs
350 300
nFET
D G S
pFET
S B D G
200
150
100
50
0 0
0.5
1.5
3.5
4.5
0.014
0.012 0.01 0.008 0.006 0.004 0.002 0 0.5 1 1.5 2
VT = 0.806
K k = 37.861 mA/V2
2.5 3 3.5 Gate voltage (V) 4 4.5 5
1.5
1 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Gate voltage (V) 0.7 0.8 0.9 1
An Ohmic MOSFET
I = (K/2k) ( (k(Vg - VT) - Vs)2 - (k(Vg - VT ) - Vd) 2 ) If Vd ~ Vs, (small difference) I = K (Vg - VT)(Vd - Vs)
(Vd - Vs = 50mV)
A MOSFET in Saturation
Saturation: Qd = 0 I = (K/2k) ( (k(Vg - VT) - Vs)2 Vs = 0 I = (Kk/2) (Vg - VT) 2
Id(sat)
Rout
GND
Width of depletion region depends on doping, not L Might expect Vo to linearly vary with L
Small-Signal Modeling
V3 V1 V2
I
V1
V2 I V3 gm
V1
+ V gmV ro
V3
V2 ro
V2 Av
2VA/(V1-V2 -VT)
2I /(V1-V2 -VT)
VA / I VA / I
I / UT
VA / UT
Small-Signal Modeling
V3 V1 V2 V3
I
V1 V2 rp
V1 rp V2 gm
+ V gmV ro
V3
V2 ro Av VA / UT
2VA/(V1-V2 -VT)
(UT b) / I
I / UT
2I /(V1-V2 -VT)
VA / I
VA / I VA / I
I / UT
VA / UT
Capacitances in a MOSFET
Overlap Capacitances
Capacitance Modeling
Capacitance Modeling
Velocity Saturation
VT L = 76 nm MOSFET
I
V1
V2 I V3 gm
V1
+ V gmV ro
V3
V2 ro
V2 Av
2VA/(V1-V2 -VT)
2I /(V1-V2 -VT)
VA / I VA / I
kI / UT
kVA / UT
I
V1 V2 rp
V1 rp V2 gm
+ V gmV ro
V3
V2 ro Av VA / UT
2VA/(V1-V2 -VT)
(UT b) / I
I / UT
2I /(V1-V2 -VT)
VA / I
VA / I VA / I
kI / UT
kVA / UT