Bridging Theory in Practice

Transferring Technical Knowledge to Practical Applications

Protected High Side Drivers

Protected High Side Drivers

Temperature Sensor Overvoltage Protection Power Stage Current Control Charge Pump Overvoltage Logic

Power Output Stage

Overvoltage Protection Logic

ESD Protection

Protected High Side Drivers

Intended Audience:
Electrical engineers with a knowledge of simple electrical circuits An understanding of MOSFETs and high side drivers is assumed

Topics Covered:
What is a PROFET?
What type of protection does a PROFET have? What type of diagnostics does a PROFET have? How does a PROFET impact system EMI? How is a PROFET circuit implemented? PROFET Selection Questions

Expected Time:
Approximately 90 Minutes

Protected High Side Drivers

Introduction to PROFETs PROFET Protection Features PROFET Diagnostic Features EMI/EMC Considerations System Implementation Frequently Asked Questions

MOSFET Review
MOSFET Metal Oxide Semiconductor Field Effect Transistor
Source
Gate

Source

N-Channel MOSFET (Enhancement)

G G

D D

(E

n+ p+ nN-Channel MOSFET Enhancement) (

n+ p+

VGS
VSG
G
S

S S

Drain

n+

P-Channel MOSFET (Enhancement)

D

MOSFET Regions of Operation

A positive (for N-Channel) or negative (for P-Channel) VGS produces a conducting channel between the Drain and Source The MOSFET is then able to operate in two regions:
1) Linear region: The MOSFET behaves like a resistance. 2) Saturation region: The MOSFET behaves like a current source.
VDS = VGS-VT

VGS increases

VGS > 0V
N-Channel MOSFET (NMOS)

IDS

VDS

High Side Drive (HSD) Configuration

MOSFET Switch 14V VGS ~ 1V VS ~ 13V ILOAD Load But, the maximum voltage at the MOSFET source is VG - VT The low value of VGS translates into a small ILOAD (saturation region) 14V The switch is on the HIGH side of the load To turn on the HSD, the MOSFET gate is pulled high

High Side Drive (HSD)Configuration

MOSFET Switch 26V VGS ~ 14V VS ~ 14V ILOAD Load The source voltage is now approximately Vsupply The high value of VGS translates into a large value of ILOAD (linear region) 14V The switch is on the HIGH side of the load To turn on the gate the MOSFET If the MOSFET HSD, is pulled to gate is pulled high a higher voltage

PROFETs = PROtected FETs

Integrated Charge Pump Over Voltage Protection Reverse Battery Protection

Diagnostics

MOSFET

Current Limit

Short Circuit Protection

PROFET

Over Temperature Protection

Voltage Controlled PROFET Block Diagram

IN

Current Controlled PROFET Block Diagram

IN

IIN

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

Rugged vs. Protected

Rugged MOSFETs Achieved through process & manufacturing technology Protection Not Built in

Protected
PROFETs Achieved through design and utilization of more advanced integrated circuit technologies Available CMOS, DMOS and Bipolar devices allow for the integration of ESD protection, active clamping, current limit, temperature sensing, etc. Protection Built in

PROtected FET (PROFET)Protection Features

Electrostatic Discharge (ESD) Protection Overvoltage / Load Dump Protection Overvoltage Shutdown Protection and Restart Undervoltage Shutdown Protection and Restart Reverse Battery Protection Reversave Battery Protection Inductive and Overvoltage Output Clamp Protection Thermal Shutdown Protection Current Limit Protection Short Circuit Shutdown Protection Inversave Inverse Current Protection Loss of Ground Protection Loss of Supply Voltage Protection

Block Diagram Including Protection Features

ESD Protection

Overvoltage Protection

VAZ

Overvoltage Shutdown Protection and Restart

Undervoltage Shutdown Protection and Restart

Load Dump Protection

The rated load dump voltage is a function of the generator impedance (RG) and the load resistance (RL) As RG and RL increase, less energy is dissipated in the PROFET, and the maximum allowable load dump voltage increases

Reverse Battery Protection

4) The over temperature protection is not active during reverse current operation!
The PROFET will requires a 150 resistor in the GND connection to limit the reverse supply current.

Reverse Battery Protection

4) The temperature protection is not active during reverse current operation!

The reverse load current through the intrinsic draindiode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode.

source

Reverse Battery Protection

4) The temperature protection is not active during reverse current operation!

PROFETs with ReverSaveTM protection overcome this problem

ReverSave Reverse Battery Protection

In PROFETs with ReverSaveTM protection, the MOSFET is turned on by the voltage drop across the resistor Rbb. With the MOSFET conducting the reverse load current (instead of the intrinsic diode), the power dissipation is greatly reduced under reverse battery conditions.

Rbb

Inductive and Overvoltage Output Clamp Protection

Thermal Shutdown Protection

Input Voltage Load Current

Junction Temperature A B C D E F

Current Limit Protection

IL(SCp)
IL(SCr)

Short Circuit Shutdown Protection

VON(SC)

Short Circuit Shutdown Protection

Inversave Inverse Current Protection

Devices with Inversave can be operated in inverse current mode. When the device is off, only the intrinsic diode conducts with high power dissipation. When device on, MOSFET turns on for lower power dissipation.

Loss of Ground Protection

With Loss of Ground Protection, Vbb, VIN, and VST are still referenced to ground through the output This ensures the device will be safely shut off if the ground pin is opened

Loss of Supply Voltage Protection

All PROFETs are protected against a loss of supply voltage for non-inductive loads Most PROFETs are also protected against a loss of supply voltage for inductive loads by handling the recirculation current through the GND pin VOUT goes negative

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

PROFET Diagnostic Feedback Digital vs. Analog

STATUS

ISTATUS
GND

Digital Diagnostic Feedback

The type of fault is determined by a diagnostic truth table
14V
Input Normal Operation L H L H L H L H L H L H Output L H L L H H L H L L H H Status L L L H H L L L L H H L

Input PROFET
Status Output
Overcurrent Short Circuit to GND

Short Circuit to Vbb

Overtemperature

Load

Open Load

Analog Diagnostic Feedback

The type of fault is determined by a diagnostic truth table AND a sense ratio parameter
14V
Input Current Normal L Operation H Overcurrent L H Short Circuit L to Ground H Overtemperature L H Short Circuit L to Vbb H Open Load L H Output Voltage L H L H L L L L H H Z H Current IIS IIS(LL) nominal IIS(LL) IIS,FAULT IIS(LL) IIS,FAULT IIS(LL) IIS,FAULT IIS(LL) < nominal IIS(LL) IIS(LH)

Input
IIS RIS

PROFET
Output

Load

Analog Load Current FeedbackVia IIS Current

Under normal operation, IIS is proportional to the output current

KILIS = IL / IIS ~ 10,000

For example: IL = 25A IIS ~ 2.5mA

IIS Current Sense Ratio

The accuracy of IIS improves with increasing output current

KILIS (IL / IIS)

IIS Current Sense Ratio

The accuracy of IIS improves with increasing output current

More Accurate

Less Accurate

Status Signal Settling Time

The Status signal is not valid during a settling time after turn-on, turn-off, or after change of load current This is true of PROFETs with analog or digital diagnostic feedback

Open Load Detection

Three Different PROFET strategies Open load detection via Sense pin on HiC (High Current) PROFETs and some PROFETs Open load detection while PROFET is turned on (for some PROFETS---mostly older types) Open load detection while PROFET is turned off (for most PROFETs---mainly newer types)

Open Load Detection Via Sense Pin

Under an open load condition, the PROFET will maintain IIS below 1A (maximum).
Current Sense

Open Load Detection PROFET On

An open load is detected if the PROFET is on and the voltage across the MOSFET is VON < RdsonIL(OL)

Open Load Detection - PROFET Off

Using an external resistor, an open load is identified if the PROFET is turned off and VOUT > 3.2V (typ.)

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

MOSFET High Side Drive

Recall, the gate of the N-Channel MOSFET must be at a voltage higher than the transistors source to turn the MOSFET on: With VSUPPLY being the highest voltage in the system, where does VGATE come from? MOSFET Switch 26V VGS ~ 12V VS ~ 14V ILOAD Load 14V

Charge Pump Gate Voltage

A charge pump is used to raise (pump) the gate voltage to an acceptable level to turn on the MOSFET
VSUPPLY
DA

Switch B
CA Switch A

DB CB

VOUT

Charge Pump Gate Voltage

Initially, Switch A is closed, and CA is charged to VSUPPLY - VDA
VSUPPLY = 14V
DA

Switch B
CA Switch A

DB CB

VOUT

~13V

Charge Pump Gate Voltage

Next, Switch B is closed, and current flows from CA, through DB to charge CB
VSUPPLY = 14V
DA

Switch B
CA Switch A

DB CB

VOUT

~13V

Charge Pump Gate Voltage

But, CA acts like a battery in series with VSUPPLY
~26V
VSUPPLY = 14V
Reverse Biased

~27V
DA

Switch B
CA Switch A

DB CB

VOUT

~13V

MOSFET High Side Drive

Now, the High Side Drive MOSFET can be turned on
MOSFET Switch 26V 14V

The turning on and off of Switch A and Switch B, however, leads to a new problem.

VGS ~ 12V

VS ~ 14V ILOAD

Load

Charge Pump Electromagnetic Interference (EMI)

120 120 LW

100 100

80
80

Charge pumps can cause harmonic emissions

dBV

dB V

KW 60 60 UKW 40 40

20 20

0 0 0.1 0.1

1.0

Frequency (MHz)

10 Frequency [MHz]

10

100

100

100

PROFETs Improved Charge Pump Reduces (EMI)

120 100 80

Newer, improved design reduces emissions 20 - 30 dB

dBV

60 40 20 0 0.1

1.0

10

100

Frequency (MHz)

Filter solutions may be required for the charge pump

Filtering - RC 150/4.7nF
Vbb BTS 736 GND 150 OUT IN load

Filtering - C= 2F
Vbb BTS 736 OUT

IN

CEMI
GND

CEMI
GND

load

Continuous charge pump emission

120 100 LW

Continuous charge pump emission

120 LW

100

M 80 BTS 736 L2 ESG1 ESG2 ESG3 ESG4 ESG5 (DB) BMW

80 BTS 736 L2 ESG1 ESG2 ESG3 ESG4 ESG5 (DB) BMW M

dB V 60

KW

dB V 60

KW

UKW 40

UKW 40

20

20

0 0.1 1 10 Frequency [MHz] 100 1000

0 0.1

10 Frequency [MHz]

100

1000

EMI/EMC Emissions due to PWM Operation

One source of EMI/EMC emissions is the internal charge pump as shown on previous slides The other source of emissions can be PWM operation

During PWM operation the slew rate and shape of the output voltage and current waveforms cause an increase in the emission spectra
For slow switching applications (most Profets used at 100Hz) this results in an increase of the emission spectra below approximately 1Mhz.

Benefits of Edge Shaping

Edge shaping allows to reduce emission levels while maintaining a slew rate which still allows for permissible power loss levels

Slew control only Theoretical ideal

100% Edge shaping 90% Slew rate control

Turn off edge shaping

10% Edge shaping 0%

Hi-Current Profet---EMC improvements

BTS650-Original Hi-current design with slew rate control only. BTS6510-Same as BTS650 with longer switching times BTS443P-Second generation with edge shaping for current turn off BTS6143/44-Third generation with edge shaping for current turn on and off Operating point: Vs=13.5V, ILoad =5A, fs = 100Hz, resistive load

Emission Spectra: BTS 650 vs. BTS6510 vs. BTS 443 vs. BTS6144
120 110 100
Device: . . Load: O-Mode: Detector: BTS650 / BTS6510 / BTS443 / BTS6144P0 / BTS6144P 60W Bulb PWM 100Hz Peak

Tendency

90 80 70
BTS650 BTS6510 BTS443 BTS6144P Noise Class 1 P Class 2 P Class 3 P Class 4 P Class 5 P BMW

dBV

60 50 40 30 20 10 0 0.1 1 10 100

1000

f / MHz

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

Overvoltage Protection of Logic Functional Block

RGND required to limit current through DAZ RST required to protect microcontroller input pin RIN may be required to protect microcontroller VAZ RIN output pin
RST

RGND

Reverse Battery Protection

RGND required to limit current through logic zener diode RST required to protect microcontroller input pin RIN may be required to protect microcontroller output pin RL must limit current through power inverse diode
RIN RST

RGND

RL

Reverse batteryPower Dissipation

Power dissipation during reverse battery can be higher than normal operation due to conduction of load current through the FET body diode For example:
3A load with 100mohm Fet in normal mode gives 0.9W 3A load thru body diode in reverse battery gives 2.1W (3A*0.7V)

The discrepancy between normal mode dissipation and reverse battery dissipation becomes worse as load current becomes higher Care must be take to control this dissipation to safe levels since over temperature protection is not active during reverse battery. This leads us to a feature where the MOSFET channel can be turned on during reverse battery operation---ReverSave

ReverSave Reverse Battery Protection Circuitry

About 100mA of current must flow through the Rbb (from the IN or STATUS pins) to turn on the MOSFET in inverse mode Currents above 100mA in Rbb may excessive dissipation. 100mA

create power Add RIN to limit current below

IS Pin Overvoltage Protection

Overvoltage conditions greater than 67V (typ) can cause the IS pin to exceed 5V - damaging a microcontroller input pin The IS pin can be clamped by an external diode if necessary

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

PROFET Selection: Customer Questions

How many channels? What is the load current? Is the load capacitive and what is the inrush current? Is the load inductive and the inductance and/or energy during turn-off? Will load be on/off or PWM? What is PWM frequency? What is ambient temperature? What type of package - surface mount or through-hole? If surface mount, how much copper area for Vbb / tab connection? If through-hole, what type of heatsink will be provided for package? What diagnostics are needed? What application extremes will the device / system be subjected to (reverse battery, load dump, overvoltage etc.)?

What Is the Load Current?

What is the maximum load current? When does the maximum occur? What is the typical load current? Alternative Question: What is the load resistance? Alternative Question: If the load is a lamp, what is its wattage? Recall, the load current is fundamental in determining an appropriate PROFET Rdson value

Is the Load Capacitive? What Is the In-rush Current?

Recall, the in rush current for lamps and RC networks may be an order of magnitude higher than the steady state current

5.5A

500mA

What Is Load Inductance or Energy During Turn-Off?

FETs are rated for the max absorbable energy when turning off inductive loads

Will the Load Be On/Off or PWM? What is PWM frequency?

PROFETs are often used in applications where the load is pulse width modulated especially lighting applications

PWM Definitions
Frequency-(frequency domain) What is the rate of repetition of a waveform? Duty cycle-(Time domain) What is the amount of time spent on with respect to the amount of time spent off?
Period I1 Ton Toff Frequency= 1/Period Period = Ton + Toff Duty Cycle = Ton/(Ton+Toff) I0 T0 T1 T2 T3 T4

What Is the Ambient Temperature?

Minimum ambient temperatures is usually -40C Maximum ambient temperature ranges from 85C to 125C for most applications: 85C for most non-powertrain applications 105C for some in-dashboard applications 125C for most powertrain applications

What Type of Package? Surface Mount or Through-hole?

Many applications require all surface mount components Surface mount components typically only have excess copper board space heatsinks Through-hole components can have large heatsinks for improved power dissipation

If Surface Mount - How Much Board Area Is Available for Heatsinks?

Engineers must trade-off the cost and size of the heatsink vs. the Rdson (and hence, the cost) of the PROFET

Introduction to PROFETs
Introduction to PROFETs

PROFET Protection Features

PROFET Diagnostic Features

EMI/EMC Considerations
System Implementation Frequently Asked Questions

Introduction to PROFETs
Temperature Sensor Overvoltage Protection Power Stage Current Control

Charge Pump

Overvoltage Logic

Power Output Stage

Overvoltage Protection Logic

ESD Protection

Thank You!
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