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\
|
=
t
N
n
f
3 / 2
2 2
3
2
|
|
.
|
\
|
=
V
N
m
h
E
f
t
3 / 2
2
2 2
2
2
2 2
3
2 2
|
.
|
\
|
= =
t
t t N
mL
h
n
mL
h
E
f f
3
3
4
8
1
2
f
n N t =
2
2
2 2
2
n
mL
h
E
n
t
=
Where is a vector quantum state
n
\
|
=
m
m
h
E
p
f
t
3 44
3
10 2 . 1
3
4
~ = m
R
A
n
t
A is a nucleons (proton and neutron)
Number density of nucleons in nucleus is
Fermi Energy of a Nucleus
Beyond 0 K: Fermi-Dirac Statistics
Fermi Energy: The energy
state whose probability of being
occupied is exactly 1/2 .
Electrons obey Fermi-Dirac-
statistics, which describe the
probability of an electron being
present in an allowed energy
state.
Note that if there are no states
at a given energy (i.e., in the
band gap) there will be no
electrons, even if there is finite
probability.
( )
kT
E E
F
e
E f
+
=
1
1
Fermi function
k=Boltzmanns constant, T=temp, E =energy , E
f
=Fermi energy
Different Types of Solids
Fermi level falls
between bands,
with a large band
gap. SiO2: 9 eV.
>5eV
Fermi level falls
between bands,
with a small band
gap.Si: 1.11 eV,
Ge:0.67 eV, GaAs:
1.43
Fermi level falls
inside the energy
band. Easy for
electrons to move
around
Fermi level
Transport in Semiconductors
Electrons that get excited into the conduction band carry current.
The space left behind in the valence band is called a hole.
Holes also conduct current. In reality, its the movement of all
the other electrons. The hole allows this motion. (Bubbles)
Holes can easily travel up in energy.
Holes have positive charge.
Current flows in the same direction as the holes move.
Holes have different mass (effective mass) and mobility
compared to electrons.
Intrinsic Semiconductor
Fermi Level: All solids are characterized by an energy that
describes the highest energy electron at 0K, the level which
has1/2 probability of being occupied at finite temperature.
Semiconductors: A solid with its Fermi level exactly between
bands, with a band gap small enough to be overcome at room
temperature.
Both electrons and holes carry current.
Silicon bond model: electrons
and holes
Si is in Column IV of periodic table:
Electronic structure of Si atom:
10 core electrons (tightly bound)
4 valence electrons (loosely bound, responsible for
most
chemical properties)
Other semiconductors:
Ge, C (diamond form), SiGe
GaAs, InP, InGaAs, InGaAsP, ZnSe, CdTe
(on average, 4 valence electrons per atom)
Silicon crystal structure
Silicon is a crystalline material:
long range atomic arrangement
Diamond lattice:
atoms tetrahedrally bonded by
sharing valence electrons
(covalent bonding)
Each atom shares 8 electrons:
low energy and stable situation
Si atomic density: 5 1022 cm3
Controlling the properties of a
Semiconductor
Silicon: 4 valence electrons.
Each Si atom bonds to four
others.
Doping
Replace some Si atoms with
atoms that do not have four
valence electrons.
These atoms will have an
extra electron (group IV), or
an extra hole (group III).
Doping increases the
number of carriers and
changes the Fermi level.
Extrinsic materials
A semiconductor material that has
been subjected to the doping process
is called an extrinsic material.
Type of materials
n-type
p-type
Phosphorus Doping (n-type)
Phosphorus has 5 valence electrons.
P atoms will sit in the location of a Si atom in the
lattice, to avoid breaking symmetry, but each will
have an extra electron that does not bond in the same
way.
These electrons form their own band. Exactly where
depends on the amounts of the two materials.
This new band is located closer to the conduction
band, because these extra electrons are easier to
excite (and can move around more easily)
Eg. Of n-type material doping
Doping with Sb
Sb - antimony
One electron loosely bound and
freely to move in the crystal
structure. The atoms (in this
case is antimony (Sb)) with five
valence electrons are called the
donor atoms. Similarly with
Phosphorus (P) which also a
donor.
Boron Doping (p-type)
Boron has 3 valence electrons.
B will sit at a lattice site, but the adjacent
Si atoms lack an electron to fill its shell.
This creates a hole.
These holes form their own energy band.
This band is located closer to the valence
band, because these extra holes are easy
to excite down into the valence band.
Eg of p-type material
Boron (B)
In this case, an insufficient
number of electrons to
complete the covalent bonds.
The impurities with three
valence electrons are called
acceptor atoms. E.g of
materials are Gallium (Ga),
Indium (In)
Void is called hole
Doping
Doping involves in adding dopant atoms to
an intrinsic semiconductor.
n-type materials: Doping Si with a Group V
element, providing extra electrons (n for
negative) and moving the Fermi level up.
p-type materials: Doping Si with a Group
III element, providing extra holes (p for
positive) and moving the Fermi level down.
Dopant
Group V (n-type) usually
antimony(Sb), arsenic(A),
phosphorus(P)
Group III (p-type)-usually Boron(B) ,
Gallium (Ga) and Indium (In)
Electron versus hole flow
The valence electron
acquires sufficient kinetic
energy to break its
covalent bond and fills the
void created by hole
When the electron move
to fill the hole therefore a
transfer of holes to the left
and electrons to the right
This flow is known as
conventional flow.
Majority and Minority Carriers
N-type material, the electron is called majority carrier and hole the minority
carrier
P-type material, the hole is called majority carrier and electron the minority
carrier.
Equilibrium Concentrations:
electrons
states of density effective
* 2
2
2 / 3
2
= |
.
|
\
|
=
h
kT m
N
n
C
t
n
o
=equilibrium electron carrier concentration
N(E)=density of states
( ) ( ) ( )
( )
( ) kT E E
C
kT E E
C
C C
E
o
F C
F C
e N
e
N
E f N dE E N E f n
C
/
/
1
~
+
= = =
}
f(E) =fermi function k=Boltzmanns const.
Equilibrium Concentrations: holes
states of density effective
* 2
2
2 / 3
2
=
|
|
.
|
\
|
=
h
kT m
N
p
t
u
p
o
=equilibrium hole carrier concentration
N(E)=density of states
( ) ( ) ( ) ( ) ( )
( )
( ) kT E E
kT E E
C
E
o
F
F
e N
e
N
E f N dE E N E f p
/
/
1
1 1
u
u
u
u
u
u
~
+
= = =
}
f(E) =fermi function k=Boltzmanns const.
Intrinsic Semiconductors
In intrinsic semiconductors (no doping) the electron and hole
concentrations are equal because carriers are created in pairs
( ) ( ) kT E E
i
kT E E
C i
i F C
e N p e N n
/ /
u
u
= = =
( ) ( )
|
.
|
\
|
|
.
|
\
|
=
kT E E kT E E
C o o
F F C
e N e N p n
/ /
u
u
( ) kT E E
i o
F i
e n p
/
=
( ) kT E E
i o
i F
e n n
/
=
( )
2
/ /
i i i
kT E
C
kT E E
C
n p n e N N e N N
g
C
= = = =
u u
u
This allows us to write
As the Fermi level moves closer to the conduction
[valence] band, the n
0
[p
0
] increases exponentially
n
i
=no. of electrons (intrinsic) p
i
= no. of holes (intrinsic)
Temperature Dependence of
Carrier Concentrations
3 10
/ 10 5 . 1 cm n
i
=
The intrinsic concentration depends
exponentially on temperature. The
T3dependence is negligible.
Ionization: only a few donors
[acceptors] are ionized.
Extrinsic: All donors [acceptors] are
ionized
Intrinsic: As the temperature increases
past the point where it is high enough
to excite carriers across the full band
gap, intrinsic carriers eventually
contribute more.
At room temp (300K), the intrinsic
carrier concentration of silicon is:
( )
( ) kT E E kT E
p n o
i F
g
e e m m
h
kT
n
/ 2 /
4 / 3
2 / 3
2
* *
2
2
(
(
|
.
|
\
|
=
t
Moving Carriers (i.e., current)
There are two mechanisms by which mobile carriers
move in semiconductors resulting in current flow
Drift
Carrier movement is induced by a force of some
type
Diffusion
Carriers move (diffuse) from a place of higher
concentration to a place of lower concentration
Drude Model of Conductivity
The current is the charge*number of electrons*area*velocity in a unit
of time. For j = current density, divide by the area. The drift velocity
(v
d
) is a function of charge mobility (
n
) and electric field (E).
At equilibrium, there is no net motion of charge, v
avg
= 0.
With an applied electric field, there is a net drift of electrons [holes]
against [with] the electric field resulting in an average velocity.
This model allows us to apply Newtons equations, but with an
effective mass. The effective mass takes the interactions with the rest
of the solid into account.
Electrons are assumed to move in a direct path, free of interactions
with the lattice or other electrons, until it collides.
This collision abruptly alters its velocity and momentum.
The probability of a collision occurring in time dtis simply dt/t,
where t is the mean free time. t is the average amount of time it
takes for an electron to collide.
c u
u n g a
qn qn J = =
DrudeModel
at
o
+ =u u ma qE F = =
m
qE
a =
E m
qt
g au
u
= =
*
( )E p n q J
p n
+ =
E
m
nq
E J
|
|
.
|
\
|
= =
*
2
t
o
o qn =
* m
qE
g a
t
u
u =
*
2
m
nq t
o =
Consider an electron just after a collision. The velocity it acquires
before the next collision will be acceleration*time
We want the average velocity of all the electrons, which can be
obtained by simply averaging the time, which we already know is t
We can also write this in terms of mobility:
Taking both holes and electrons into account, we end up with the
following formula for current density due to drift.
Hall Effect
( ) B q F + = u c
qn
B J
E
z x
y
=
Moving electrons experience a force
due to a perpendicular B field
y resistivit =
qn
1
=
An electric field develops in response
to this force.
The sign of this field perpendicular
to the flow of current determines the
carrier type.
Density and mobility can also be
calculated.
Diffusion
Diffusion results in a net flux of particles from the region of higher
concentration to the region of lower concentration
This flux leads to current (movement of charged particles)
Magnitude of current depends on the gradient of concentration
dx
x dn
qD x J
n n
) (
) (
diffusion ,
=
q
kT
D
D
p
p
n
n
= =
D
n
is the diffusivity coefficient
Diffusivity is related to mobility by Einsteins relationship
Typical values for Si at room temp
D
n
= 34 cm
2
/s and D
p
= 13 cm
2
/s