Zebrev GFET Model MIEL May 2012

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International Conference on Microelectronics International Conference on Microelectronics, , 15 15 May May 201 2012 2 gizebrev@mephi.ru gizebrev@mephi.ru
0
G
G
.
.
I.
I.
Zebrev, A. A. Tselykovskiy,
Zebrev, A. A. Tselykovskiy,
V.O. Turin
V.O. Turin
NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI
NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI
MOSCOW, RUSSIA
MOSCOW, RUSSIA
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Outline
Introduction
Physics
Applications
Unresolved Problems
Conclusions
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2
Introduction
- Current Modulation through Electrostatic Induction
- Semi-classical (diffusion-drift) transport
Basic Physics for FETs
Graphene FET (GFET)
- High carrier mobility (>> 1000 cm
2
V
-1
s
-1
)
- Photon-like dispersion with a constant carrier
velocity v
0
~ c/300 = 10
8
cm/s etc...
Purpose
- Semi-classical diffusion-drift model of GFET
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Main Features of Diffusion-Drift Model
Explicit analytical solution of current
continuity equation in the FET channel
This allows to obtain electric and chemical
potentials distributions along the channel
Gradient of electrochemical potential (quasi-
Fermi level) near the source yields I-V
characteristics
Diffusion to Drift current Ratio is determined
by the gate screening and polarization of
carrier gas in the channel
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Band Diagram and Equivalent Circuit
of DG GFET
DG graphene structure energy band diagram
Equivalent circuit
of DG GFET structure
All quantities in the model are expressed as functions
the Fermi energy near the drain fixed by V
GS1
and V
GS2
graphene
c
F
eV
2
eV
1

d
1

d
2
gate 1 gate 2
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ELECTROSTATICS OF DOUBLE GATE
GRAPHENE FET
( )
2
1 2
1 0 2 0
1 2
F F
S F it F
eV eV
e n C
d d
c c
c c c c c c

+ = +
Planar Electric Neutrality in Channel Gradual Approximation
( ) ( )
2
1 1 2 2 1 2
,
S F it
e n e CV C V C C C c = + + +
Fermi energy and channel charge density as functions of
gate voltages
( )
( )
1/ 2
2 2
1 2
, 2
F ad ad Geff ad
V V m eV m c c c c = +
2
2 2
0
F
S
n
v
c
t
=
1 2
1
it
C
m
C C
= +
+
( )
2 2
0 1 2
2
2
ad
v C C
e
t
c
+
=

1 1 2 2
1 2
Geff
CV V
V
C
+
=
+
Ideality factor
Effective gate bias
Electrostatic energy per
a carrier in graphene
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EQUIVALENT CIRCUIT OF DG GFET
Diffusion to drift current ratio
( )
( )
1 2
Geff
Geff
ad DIFF
DR Q it F
V Geff
V
J C C
J e C C
e V
,
c ,
k
c
,
c c
+ | | c
= = = = =
|
c +
c c
\ .
( )
( )
( )
0 0
0
1
0 0 1 exp
1
DS
D S S
D
x
d x
eV W
I W n e D n
dx L
k k
k k c
=
| |
| |
+
= =
|
|
|
+
\ .
\ .
0 0 0 Q S
D C e n o = =
I-V characteristics
Einstein Relation
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IDEAL SATURATION
0
1
1 exp 2
2
DS
D D DSAT
DSAT
V
I g V
V
| |
| |
=
|
|
|
\ .
\ .
Two parametric representation of I-V characteristics
Low-field conductance:
( ) ( )
1 1 2 2
1 2 1 2
1 2
1
, /
F
DSAT S
CV C V
V en V V C C
e C C
c k
k
+ +
= = + +
+
Saturation drain voltage due to pinch-off:
( ) ( )
0 0 0 0
/ /
D S
g W L e n W L o =
To reduce pinch-off saturation voltage one needs
to increase the gate capacitances ...
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TWO MODES of CURRENT SATURATION
I.
Pinch
Pinch
-
-
off current saturation:
off current saturation:
II.
II.
Drift velocity saturation:
Drift velocity saturation:
-depends on details of scattering processes;
- determined by optical phonon emission for high-field
conditions in short-channel FETs
- typical maximum drift velocity in graphene
- has fundamental character and stems from a nature mutual
screening between electrodes in the field-effect devices;
- imposes maximal magnitudes saturation current of ideal
long-channel FETs
8
0
~ 0.5 ~ 0.5 10
opt
cm
v v
s
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CROSSOVER BETWEEN TWO SATURATION
MODES
Drift velocity saturation reduces the saturation
Drift velocity saturation reduces the saturation
current and drain voltage
current and drain voltage
- convenient interpolation
0
1
1 exp 2
2
DS
D D S
S
V
I g V
V
| |
| |
=
|
|
|
\ .
\ .
0
0
2
min , tanh
2
opt
DSAT
S DSAT opt
opt
v L
V
V V v
v L
| |
(
= =
|
(
|

\ .
0
0
1
2
DSAT DSAT
opt D
V V
a
v L V
= = <<
Pinch-off saturation, long channels, low n
S
0
1
2
DSAT
opt
V
a
v L
= >>
Velocity saturation, short channel, large n
S
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PINCH-OFF VS VELOCITY SATURATION
DRAIN
CURRENT
V
DSAT
(pinch-off)
DRAIN-SOURCE
VOLTAGE
V
D0
(velocity
saturation)
3 2
0
8
0
2
10 /
10
1 10 /
opt
D
v
L cm Vs
V
m cm s
| | | |
| |
~
| |
|
\ .
\ . \ .
0
0
2
DSAT DSAT
S
I V
Wen L
| |
=
|
\ .
0
DSAT
opt
S
I
v
Wen
=
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UNRESOLVED PROBLEMS
Near the Charge Neutrality Point (CNP) the Fermi
wavelength becomes macroscopic and semi-
classical approximation generally failed
High electric field in the channel especially near
the drain leads to extrinsic conductivity due to :
- Impact generation
- Quantum tunneling generation
between conduction and
valence bands
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Conclusions
Semi-classical diffusion-drift model of
Double Gate GFET has been developed
Quantitative criterion for crossover between
two saturation modes
Pinch-off (square-law ) prevails for low
carrier concentration (near the CNP)

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