Diode equivalent circuits

1. Access resistances in vertical devices

Top metal contact
Area = A There is an access resistance connected in series with an ideal diode D (the diode can be of any type, i.e. rectifier, LED, Varicap, Tunnel diode etc.).

Rcp

p-type

Rsp D

dp

Total access (series) resistance for the diode on the left:

Rs = Rcp+Rsp + Rsn + Rcn

n-type

Rcn

Rsn

dn

Rcp= cp/A; Rcn= cn/A

Note the difference between lateral and vertical contacts. For lateral contacts, a unit-width contact resistance (mm or cm) is typically used. For vertical contacts, a unit-area specific resistance (mm2 or cm2) is typically used.

Bottom metal contact

1. Access resistances in vertical devices (cont.)

Top metal contact
Area = A The series resistance associated with the diode base regions: Rsp and Rsn:

Rcp

p-type

Rsp D

dp

1 Rsp = p ; where p = A q pp is the resistivity of the p material

dp

n-type

Rcn

Rsn

dn

d 1 Rsn = n n ; where n = A q n n is the resistivity of the n material

Bottom metal contact

1. Access resistances in vertical devices (cont.) Diode low-frequency equivalent circuit

Top metal contact
Area = A

Rcp

p-type

Rsp D
V

Rs D

Rs = Rcp+Rsp + Rsn + Rcn

n-type

Rcn

Rsn
For a regular p-n junction diode, the total voltage drop across the device:

Bottom metal contact

V = VD + VRS VD = (kT/q) ln(I/Is+1); VRs = I Rs

1. Access resistances in vertical devices (cont.) Diode low-frequency equivalent circuit

Top metal contact
Area = A
5

Ignoring Rs

IRs

Rcp

p-type

Rsp
3

D
I, A

Rs
2 1 0 0 -1 0.2 0.4
V, V

n-type

D Rsn

Rcn

0.6

0.8

Bottom metal contact

2. Access resistances in lateral devices Example: planar GaAs Schottky diode

Schottky

Ohmic
W

Total access (series) resistance for the diode on the left: Rs = Rc+Rgap+ RSch Rc = Rc1 /W; Rgap = Rsq Lgap / W;

n-GaAs i-GaAs

LSch

Lgap

LC

RSch Rsq (LSch / 3) / W; - accounts for the current spreading under the Schottky contact.

3. High-frequency equivalent circuits Example: vertical Schottky diode

At high frequencies, capacitances and inductances associated with the diode itself and the package have significant impact on the device performance

D
n-type

CB

A CB = S 0 Wdepl
capacitance associated with the diode depletion region Cp Cp - the capacitance associated with the device contact pads or package

Rs(incl. Rc)

Lp

Lp - the inductance associated with the device wiring and/or package

3. High-frequency equivalent circuits Frequency dependence of the device impedance

Example: Consider Schottky diode with the DC differential resistance of 10 . Comment: the differential resistance, R = V = kT I 0.026V at 300 K ; d I I q

CB

Suppose: CB = 20 pF; Cp = 5 pF; Rs = 1 ; Lp = 0.5 nH

Rs

Cp

The diode impedance can be found as follows: 1. Yd1 = 1/Rd + jCB; Zd1 = 1/ Yd1; where =2f; 2. Zd2 = Zd1 + Rs; Yd2 = 1/Zd2;

Lp

3. Yd3 = Yd2 + jCp; Zd3 = 1/ Yd3; 4. Zdiode = Zd3 + jLp;

Diode impedance frequency dependence

%Diode impedance frequency dependence %Suppose: Rd=10 Ohm; %CB = 20 pF; Cp = 5 pF; %Rs = 1 Ohm; Lp = 0.5 nH Rd=10; CB = 20e-12; Cp = 5e-12; Rs = 1; Lp = 0.5e-9; %<<<Calculations>>>>> f=1e6:1e6:3e9; om=2*pi*f; Yd1 = 1/Rd + i*om*CB; Zd1 = 1./Yd1; Zd2 = Zd1 + Rs; Yd2 = 1./Zd2; Yd3 = Yd2 + i*om*Cp; Zd3 = 1./Yd3; Zdiode = Zd3 + i*om*Lp; Req=real(Zdiode); Xeq=imag(Zdiode); figure(1); plot(f*1e-6,Req); figure(2); plot(f*1e-6,Xeq);

Diode impedance frequency dependence

CB

Rs

Cp

Lp

Diode impedance frequency dependence

CB

Rs

Cp

Lp