IRF150

Data Sheet March 1999 File Number

1824.3

40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power eld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly Developmental Type TA17421.

Features
40A, 100V rDS(ON) = 0.055 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards

Ordering Information
PART NUMBER IRF150 PACKAGE TO-204AE BRAND IRF150

Symbol
D

NOTE: When ordering, include the entire part number.

Packaging
JEDEC TO-204AE
DRAIN (FLANGE)

SOURCE (PIN 2) GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

IRF150
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specied IRF150 100 100 40 25 160 20 150 1.2 150 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC
oC oC

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specication is not implied.

NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specied SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd CISS COSS CRSS LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) from the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances
D LD G LS S

Electrical Specications
PARAMETER

TEST CONDITIONS VGS = 0V, ID = 250A (Figure 10) VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V VGS = 10V, ID = 20A (Figures 8, 9) VDS > ID(ON) x rDS(ON)MAX , ID = 20A (Figure 12) VDD = 24V, ID 20A, RG = 4.7, RL = 1.2 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature

MIN 100 2.0 40 9.0 -

TYP 0.045 11 63 27 36 2000 1000 350 5.0

MAX 4.0 25 250 100 0.055 35 100 125 100 120 -

UNITS V V A A A nA S ns ns ns ns nC nC nC pF pF pF nH

Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current

On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain Miller Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance

VGS = 10V, ID = 50A, VDS = 0.8 x Rated BVDSS , Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

Internal Source Inductance

LS

12.5

nH

Thermal Impedance Junction to Case Thermal Impedance Junction to Ambient

RJC RJA Free Air Operation

0.8 30

oC/W oC/W

IRF150
Source to Drain Diode Specications
PARAMETER Continuous Source to DrainCurrent Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode
G D

MIN -

TYP -

MAX 40 160

UNITS A A

Diode Source to Drain Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES:

VSD trr QRR

TJ = 25oC, ISD = 40A, VGS = 0V (Figure 13) TJ = 150oC, ISD = 40A, dISD/dt = 100A/s TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/s

600 3.3

2.5 -

V ns C

2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 170H, RG = 50, Peak IAS = 40A. See Figures 15, 16.

Typical Performance Curves

1.2 POWER DISSIPATION MULTIPLIER 1.0

Unless Otherwise Specied

40

0.8 0.6 0.4 0.2 0

ID, DRAIN CURRENT (A)

32

24

16

0 0 50 100 150 25 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

ZJC , TRANSIENT THERMAL

1.0 IMPEDANCE (oC/W) 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 0.1 PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 TJ = PDM x ZJC + TC 1 10

t1, RECTANGULAR PULSE DURATION (s)

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

IRF150 Typical Performance Curves

103 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 102 ID, DRAIN CURRENT (A)

Unless Otherwise Specied (Continued)

50 10V 40

9V VGS = 8V

80s PULSE TEST

10s 100s 1ms

30

7V

20

10 TJ = MAX RATED TC = 25oC SINGLE PULSE 1 1

10ms 100ms DC 102 103

6V

10

5V 4V

0 0 10 20 30 40 VDS , DRAIN TO SOURCE VOLTAGE (V) 50

10 VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

30 VGS = 10V 9V 8V 7V 12 6V 8 5V 4 4V 0 0 0.4 0.8 1.2 1.6 VDS , DRAIN TO SOURCE VOLTAGE (V) 2.0 0 0 80s PULSE TEST 25 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 16 20 15 10 5

FIGURE 5. OUTPUT CHARACTERISTICS

20

VDS > ID(ON) x rDS(ON)MAX 80s PULSE TEST

TJ = 125oC TJ = 25oC TJ = -55oC

VGS , GATE TO SOURCE VOLTAGE (V)

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

0.20 NORMALIZED DRAIN TO SOURCE ON RESISTANCE

2.2

ID = 14A VGS = 10V

rDS(ON) , DRAIN TO SOURCE ON RESISTANCE ()

1.8

0.14 VGS = 10V 0.10

1.4

1.0

0.06

VGS = 20V

0.6

0.02

40

80 120 ID , DRAIN CURRENT (A)

160

0.2 -60

-40

-20

20

40

60

80

100

120

140

TJ , JUNCTION TEMPERATURE (oC)

NOTE: Heating effect of 2s is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

IRF150 Typical Performance Curves

1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A

Unless Otherwise Specied (Continued)

4000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD

1.15 C, CAPACITANCE (pF)

3200

1.05

2400 CISS 1600 COSS 800 CRSS

0.95

0.85

0.75 -40

-20

20

40

60

80

100

120

140

160

10

20

30

40

50

TJ , JUNCTION TEMPERATURE (oC)

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

20 ISD, SOURCE TO DRAIN CURRENT (A) 80s PULSE TEST gfs, TRANSCONDUCTANCE (S) 16 TJ = -55oC TJ = 25oC 12 TJ = 125oC

2 102

TJ = 150oC 10 TJ = 25oC

1.0 0 1 2 3 VSD , SOURCE TO DRAIN VOLTAGE (V) 4

10

20 30 ID , DRAIN CURRENT (A)

40

50

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT

FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 40A FOR TEST CIRCUIT, SEE FIGURE 19 15 VDS = 20V VDS = 50V 10 VDS = 80V

0 0 28 56 84 112 140 Qg(TOT) , TOTAL GATE CHARGE (nC)

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

IRF150 Test Circuits and Waveforms

VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD

0V

IAS 0.01

0 tAV

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

tON td(ON) tr RL VDS

+

tOFF td(OFF) tf 90%

90%

RG DUT

VDD 0

10% 90%

10%

VGS VGS 0 10%

50% PULSE WIDTH

50%

FIGURE 17. SWITCHING TIME TEST CIRCUIT

FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

CURRENT REGULATOR

VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS

12V BATTERY

0.2F

50k 0.3F

DUT 0

Ig(REF) 0 IG CURRENT SAMPLING RESISTOR

S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0

FIGURE 19. GATE CHARGE TEST CIRCUIT

FIGURE 20. GATE CHARGE WAVEFORMS

IRF150

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