TIP41 Series(TIP41/41A/41B/41C)

TIP41 Series(TIP41/41A/41B/41C)
Medium Power Linear Switching Applications
Complement to TIP42/42A/42B/42C

TO-220 2.Collector 3.Emitter

1.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO Parameter Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C Collector-Emitter Voltage: TIP41 : TIP41A : TIP41B : TIP41C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 40 60 80 100 40 60 80 100 5 6 10 2 65 2 150 - 65 ~ 150 Units V V V V V V V V V A A A W W C C

VCEO

VEBO IC ICP IB PC PC TJ TSTG

Electrical Characteristics TC=25C unless otherwise noted

Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : TIP41 : TIP41A : TIP41B : TIP41C Collector Cut-off Current : TIP41/41A : TIP41B/41C Collector Cut-off Current : TIP41 : TIP41A : TIP41B : TIP41C Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 Min. 40 60 80 100 0.7 0.7 400 400 400 400 1 30 15
75

Max.

Units V V V V mA mA A A A A mA

ICEO

VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 40V, VEB = 0 VCE = 60V, VEB = 0 VCE = 80V, VEB = 0 VCE = 100V, VEB = 0 VEB = 5V, IC = 0 VCE = 4V,IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 600mA VCE = 4V, IC = 6A VCE = 10V, IC = 500mA 3.0

ICES

IEBO hFE VCE(sat) VBE(sat) fT

1.5
2.0

V V MHz

* Pulse Test: PW300s, Duty Cycle2%

2000 Fairchild Semiconductor International Rev. A, February 2000

TIP41 Series(TIP41/41A/41B/41C)

Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000

10000

VCE = 4V

IC /IB = 10

hFE, DC CURRENT GAIN

100

1000

V BE(sat)

10

100

V CE(sat)

1 1 10 100 1000 10000

10 1 10 100 1000 10000

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

100

100

IC[A], COLLECTOR CURRENT

IC(MAX) (PULSE)
10

PC[W], POWER DISSIPATION

80

0. 5 ms

60

1m

IC(MAX) (DC)

5m s

40

TIP41 V CEO MAX. TIP41A VCEO MAX. TIP41B VCEO MAX. TIP41C VCEO MAX.
0.1 1 10 100

20

0 0 25 50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area

Figure 4. Power Derating

2000 Fairchild Semiconductor International

Rev. A, February 2000

TIP41 Series(TIP41/41A/41B/41C)

Package Demensions

TO-220
9.90 0.20
1.30 0.10 2.80 0.10

4.50 0.20

(8.70) 3.60 0.10

(1.70)

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )

0.50 0.05

+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2000 Fairchild Semiconductor International Rev. A, February 2000

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2000 Fairchild Semiconductor International

Rev. E

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