MEMS & BIO-MEMS - Ch1

AM-969 MEMS & BIO-MEMS
S. J. Pawar Assistant Professor Applied Mechanics Department Motilal Nehru National Institute of Technology, Allahabad
Syllabus
Introduction: MEMS microsystem sensor actuator history MEMS, microsystem, sensor, actuator, history, market, applications etc. Review of essential mechanical, electrical concepts: Mechanical: Stress strain beam cantilever plates bending Stress, strain, beam, cantilever, plates, bending, thermal stress, torsion of beam, fracture, vibration etc. Electrical: Conductor, insulator, semiconductor g g g y, , Scaling laws in miniaturization: Scaling in geometry, force, electricity, fluid, heat transfer, etc. Material for MEMS: Review of crystal structure, miller indices, material for MEMS, substrate, device, packaging, silicon, silicon compound, gallium arsenide, piezoelectric martial, quartz, polymer, d lli id i l ti ti l t l biomaterials and biocompatibility issues etc. Micro total analysis system (TAS): Fluid control components, TAS: sample handling -TAS: separation components -TAS: handling, TAS: components, TAS: detection, cell handling and characterization systems, systems for biotechnology and PCR, polynucleotide arrays and genetic g screening
S J PAWAR, MEMS and BIOMEMS, Even 2010-11 2
Syllabus
Sensing and actuation: Electrostatic sensing and actuation actuation, thermal sensing and actuation, piezoelectric and piezoresistive sensing and actuation, magnetic sensing and actuation, miniature , y p , biosensors, biosensors arrays and implantable devices, neural interfaces, microsurgical tools, micro needles, and drug delivery, Microsystems for tissue engineering, tissue scaffolds, optical biosensors, etc. Fabrication F b i ti of f MEMS: MEMS Bulk B lk micromachining, i hi i surface f micromachining, lithography, LIGA, SLIGA, etc MEMS packaging: MEMS metrology, Overview of packaging of microelectronics, microelectronics packaging design technique material etc design, technique, material, MEMS Design and Software: Design methodologies for MEMS, study of following softwares based on availability: Ansys multiphysics, multiphysics COMSOL multiphysics MatLab Intellisuite AutoCAD multiphysics, MatLab, Intellisuite, AutoCAD, SolidWorks, Spice, Ledit etc. Case studies: Detailed case studies of following MEMS devices: p , p Piezoresistive pressure sensor, Capacitive accelerometer.
Syllabus
Homework Design, analysis, layout, and simulation of MEMS devices Project Small research project summarized in a four-page write-up write up (abstract style) style). One presentation based on the research work of any paper of your choice in the field of MEMS.
S J PAWAR, MEMS and BIOMEMS, Even 2010-11
Books 1. Foundations of MEMS, Chang Liu, Pearson Education International, 2006 2 MEMS and MICROSYSTEM Design and Manufacture Tai Ran 2. Manufacture, Tai-Ran Hsu, Tata McGraw-Hill Publishing company Ltd., New Delhi, 2002 3. Microsystems Design, S. D. Senturia, Kluwer Academic Publishers, Publishers 2001 4. Fundamentals of Microfabrication, Marc Madou, CRC Press, NY, 1997. 5. A. H. Becker, Eds. 5 A Manz and H Becker Eds Microsystems Technology in Chemistry and Life Sciences Springer-Verlag, New York, 1999. ISBN: 3-540-65555-7 , , 6. Marc.I.Madou, Fundamentals of Micro Fabrication, the Science of Miniaturization, Nanogen corporation, USA, CRC press, March 2002.
Chapter 1 Introduction
Outline of presentation:
MEMS, , Microsystem, Sensor Sensor, Actuator, History, Market, , Applications etc.
MEMS, MEMS, Microsystem, Sensor Sensor, Actuator, History, Market, , Applications etc.
MEMS
Richard P. Feynman
MEMS
A micro-electro mechanical system (MEMS) can be defined as a batch fabricated (micro-fabricated) system that integrates mechanical elements sensors actuators elements, sensors, actuators, and electronics through micro fabrication techniques. MEMS contains both electrical and mechanical components with characteristic sizes ranging from nanometers to millimeters. MEMS in USA. Microsystem in Europe. Mechatronics in Japan.
MEMS
MEMS is a new manufacturing technology a way of making technology, complex electromechanical systems ,uniting electromechanical elements together with electronics. It promises to revolutionize every product by bringing together silicon-based microelectronics with micromachining technology. Functionality of devices can be increased by joining many elements p on a small space. Large numbers of devices can be inexpensively made, and this technology integrates well with electronics g y g , , The sensors gather information by measuring mechanical, thermal, biological, chemical, magnetic and optical signals from the environment. The microelectronic ICs act as the decision-making piece of the system, b processing th i f t by i the information given b th sensors. ti i by the Finally, the actuators help the system respond by moving, pumping, filtering or somehow controlling the surrounding environment to achieve its purpose purpose.
MEMS
The Crucial Differences Between MEMS and ICs
ICs are essentially flat. MEMS are typically not. ICs depend on effects buried beneath the surface of the IC. MEMS are essentially surface-effect devices. ICs have no moving parts. MEMS typically move. ICs are built in a way that makes them insensitive to their environment before they exit the carefully controlled world of the IC foundry in wafer form. MEMS in wafer form are typically extremely sensitive to their environment until they are packaged. This sensitivity makes every post-foundry MEMS handling step (wafer dicing, placement in a package, formation of electrical connections, package closure) different from IC handling (nonstandard), and very expensive. expensive
Some Issues are relevant to both IC and MEMS

design: Stress, selective etching, Pattern transfer, cleanliness, structure release. Some are unique: wet environment, 3D, moving parts. Integration requires considering limitations of both technologies. MEMS evolved and now use various materials, processes for a wide range ,p g of applications:
MEMS
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MEMS
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MEMS
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MEMS
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MEMS, MEMS, Microsystem, Sensor Sensor, Actuator, History, Market, , Applications etc.
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Sensors and Actuators

Displacement Velocity Acceleration Force Pressure Temperature
Mechanical Energy
Sensor
Electrical Energy
Actuator
Current C t Voltage Capacitance Resistance Inductance

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Transducer
Transducers
a device that converts a primary form of energy into a corresponding signal with a different energy form
Primary Energy Forms: mechanical, thermal, electromagnetic, optical, chemical, etc. optical chemical etc
take form of a sensor or an actuator
Sensor (e g thermometer) (e.g.,

a device that detects/measures a signal or stimulus acquires information from the real world
Actuator (e.g., heater)

a device that generates a signal or stimulus
real world sensor actuator t t intelligent feedback system t
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Sensor
MEMS as microsensor
Power supply
Input signal
Microsensing element
Transduction unit
Output signal
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Sensor Systems
Typically interested in electronic sensor
convert desired parameter into electrically measurable signal
General Electronic Sensor

primary t i transducer: changes l world parameter i t electrical d h real ld t into l t i l signal secondary transducer: converts electrical signal into analog or digital y g g g values
real world
primary transducer analog signal g secondary transducer
usable values
sensor
Typical Electronic Sensor System yp y

input signal (measurand)
sensor
sensor data analog/digital g g
microcontroller
signal processing communication i ti
network display
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Example Electronic Sensor Systems S t

Components vary with application
digital sensor within an instrument
microcontroller
signal timing data storage
sensor sensor C
signal timing memory
keypad display
handheld instrument
analog sensor analyzed by a PC

sensor interface sensor
A/D, communication signal processing e.g., RS232
PC
comm. card
multiple sensors displayed over internet

internet
sensor processor comm.
sensor bus
PC
comm. card
sensor bus
sensor processor comm. 22
Primary Transducers
Conventional Transducers
large, but generally reliable, based on older technology
thermocouple: temperature difference compass (magnetic): direction
Microelectronic Sensors
millimeter sized, highly sensitive, less robust
photodiode/phototransistor: photon energy (light)

infrared detectors, proximity/intrusion alarms
piezoresisitve pressure sensor: air/fluid pressure microaccelerometers: vibration -velocity (car crash) vibration, chemical senors: O2, CO2, Cl, Nitrates (explosives) DNA arrays: match DNA sequences
Example Primary Transducers

Light Sensor
photoconductor
light R
photodiode
light I
membrane pressure sensor

resistive (pressure R) capacitive (pressure C)
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Displacement Measurements
Measurements of size, shape, and position utilize displacement sensors Examples diameter of part under stress (direct) movement of a microphone diaphragm to quantify liquid movement through the heart (indirect) Primary Transducer Types Resistive Sensors (Potentiometers & Strain Gages) Inductive Sensors Capacitive Sensors Piezoelectric Sensors Secondary Transducers Wheatstone Bridge Amplifiers
Temperature Sensor Options

Resistance Temperature Detectors (RTDs)
Platinum, Nickel, Copper metals are typically used positive temperature coefficients
Thermistors (thermally sensitive resistor)

formed from semiconductor materials, not metals
often composite of a ceramic and a metallic oxide (Mn, Co, Cu or ) Fe)
typically have negative temperature coefficients
Thermocouples
based on the Seebeck effect: dissimilar metals at diff. temps. signal
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Fiber-optic Temperature Sensor p p

Sensor operation
small prism-shaped sample of single-crystal undoped GaAs p p p g y p attached to ends of two optical fibers light energy absorbed by the GaAs crystal depends on temperature percentage of received vs. transmitted energy is a function of temperature
Can be made small enough for biological implantation
GaAs semiconductor temperature probe

Example MEMS Transducers

MEMS = micro-electro-mechanical system
miniature t i i t transducers created using IC f b i ti processes d t d i fabrication
Microaccelerometer
cantilever beam suspended mass
Rotation
gyroscope
Electrodes Ring structure
Pressure
Diaphragm (Upper electrode) Lower electrode S J PAWAR, MEMS and BIOMEMS, Even 2010-11
5-10mm
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Connecting Sensors to Microcontrollers Mi t ll

Analog
many microcontrollers h i t ll have a b ilt i A/D built-in
8-bit to 12-bit common many have multi-channel A/D inputs
Digital
serial I/O
use serial I/O port, store in memory to analyze port synchronous (with clock)
must match byte format, stop/start bits, parity check, etc.
asynchronous (no clock): more common for comm than data comm.
must match baud rate and bit width, transmission protocol, etc.
frequency encoded
use ti i port, measure pulse width or pulse f timing t l idth l frequency
sensor sensor C
signal timing memory
keypad display
instrument
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Actuator
MEMS as microactuator
Power supply
Output action
Microactuating element
Transduction unit
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History
The invention of the transistor at Bell Telephone Laboratories in 1947 sparked a fast gro ing microelectronic technolog fast-growing technology. Jack Kilby of Texas Instruments built the first integrated circuit (IC) in 1958 using germanium (Ge) devices. It consisted of one transistor three resistors and one capacitor The transistor, resistors, capacitor. IC was implemented on a sliver of Ge that was glued on a glass slide. Later that same year Robert Noyce of Fairchild Semiconductor announced the development of a planar double-diffused Si IC. The complete transition from the original Ge transistors with grown a d a oyed ju ct o s and alloyed junctions to silicon (Si) planar double-diffused devices s co (S ) p a a doub e d used de ces took about 10 years. The success of Si as an electronic material was due partly to its wide availability from silicon dioxide (SiO2) (sand), resulting in potentially l i ll lower material costs relative to other semiconductors. i l l i h i d
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IC - Jack Kilby (1958)
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Since 1970 the complexity of ICs has doubled every two to three 1970, years. The minimum dimension of manufactured devices and ICs has decreased from 20 microns to the sub micron levels of today today. Current ultra-large-scale-integration (ULSI) technology enables the fabrication of more than 10 million transistors and capacitors on a yp p typical chip. IC fabrication is dependent upon sensors to provide input from the surrounding environment, just as control systems need actuators (also referred to as transducers) in order to carry out their desired functions. f ti Due to the availability of sand as a material, much effort was put into developing Si processing and characterization tools. These t l are now b i used t advance t Th tools being d to d transducer t h l d technology. Today's IC technology far outstrips the original sensors and actuators in performance, size, and cost.
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Attention in this area was first focused on microsensor (i e (i.e., microfabricated sensor) development. First microsensor (also been the most successful), was Si pressure sensor. sensor In 1954 it was discovered that the piezoresistive effect in Ge and Si had the potential to produce Ge and Si strain gauges with a gauge ( , y) g factor (i.e., instrument sensitivity) 10 to 20 times greater than those based on metal films. As a result, Si strain gauges began to be developed commercially in 1958. The first high-volume pressure sensor was marketed by National Semiconductor in 1974. This sensor included a temperature controller for constanttemperature operation. I t t ti Improvements i thi t h l t in this technology since th i then have included the utilization of ion implantation for improved control of the piezoresistor fabrication. Si pressure sensors are now a billion dollar industry billion-dollar industry.
Around 1982 the term micromachining came into use to designate the fabrication of micromechanical parts (such 1982, as pressure-sensor diaphragms or accelerometer suspension beams) for Si microsensors. The micromechanical parts were fabricated by selectively etching areas of the Si substrate away in order to leave behind the desired geometries. Isotropic etching of Si was developed in the early 1960s for transistor fabrication. Anisotropic etching of Si then came about in 1967. Various etch-stop techniques were subsequently developed to provide further process flexibility. These t h i Th techniques also f l form th b i of th b lk micromachining processing t h i the basis f the bulk i hi i i techniques. B lk micromachining Bulk i hi i designates the point at which the bulk of the Si substrate is etched away to leave behind the desired micromechanical elements [3]. Bulk micromachining has remained a powerful technique for the fabrication of micromechanical elements. However, the need for flexibility in device design and performance improvement has motivated the development of new concepts and techniques for micromachining. Among these is the sacrificial layer technique, first demonstrated in 1965 by Nathanson and Wickstrom [15], in which a layer of material is deposited between structural layers for mechanical separation and isolation. This layer is removed during the release etch to free the structural layers and to allow mechanical devices to move relative to the substrate. A layer is releasable when a sacrificial layer separates it from the substrate. The application of the sacrificial layer technique to micromachining in 1985 gave rise to surface micromachining, in which the Si substrate is primarily used as a mechanical support upon which the micromechanical elements are fabricated. Prior to 1987, these micromechanical structures were limited in motion During 1987 1988 a turning point was 1987 motion. 1987-1988, reached in micromachining when, for the first time, techniques for integrated fabrication of mechanisms (i.e. rigid bodies connected by joints for transmitting, controlling, or constraining relative movement) on Si were demonstrated. During a series of three separate workshops on microdynamics held in 1987, the term MEMS was coined. Equivalent terms for MEMS are microsystems (preferred in Europe) and micromachines (preferred in Japan).
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Market
2005 MEMS Industry Overview and Sales Projections for MEMS Devices
Current market surveys indicate potential sales for MEMS-based devices in wireless and communications sectors sectors. The market growth for the MEMS devices over the next few years in terms of unit shipments at a compound annual growth rate (CAGR) approaching 20 percent to nearly 6 billion units in 2009. The funding increase for MEMS companies by 44 percent in 2004 versus 2003 2003. Year-over-year total MEMS revenues were up to 32 percent from 2003 to 2004. The latest market survey shows microfluidic devices accounted for nearly 69 percent of total unit shipments and 23 percent of total revenues in 2004. The Th communications market i f i ti k t is forecast t experience th hi h t CAGR f th unit t to i the highest for the it shipments and revenues for MEMS devices deployed by cell phones, mobile phones, inertial sensors, and optical networking sectors. It is further states that the top 20 suppliers of MEMS devices accounted for 62 percent of th revenues i 2004 t f the in 2004.
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CAGR (Compound Annual Growth Rate)

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Today, MEMS microphones amount to just tens of millions of units, but by 2009 will have carved out an estimated $500 million piece of the $2 billion total market for microphones. On O average every thi d microphone will b b third i h ill be based on MEMS d MEMS. The mobile phone is an opportunity for MEMS technology due to the huge market size (estimated 9001,000 million units by the end of the decade) decade). The selling price is set by ECMS and is around $0.50 or less for analog microphones, while a premium of 2030% is added for digital devices, in high volume. The differential is larger at lower volumes.
http://www.memsinvestorjournal.com/2006/04/mems_microphone.html S J PAWAR, MEMS and BIOMEMS, Even 2010-11 43
The MEMS microphones market is an attractive, and still growing, multimillion-dollar multimillion dollar market characterized by very high production volumes of MEMS microphones that are extremely reliable and low in cost. In 2006 the global market for MEMS microphones has reached $140 2006, million and will increase to $922 million by 2011 with an annual average growth rate of 45.7%. Mobile phones, digcams and camcorders will have the largest share p , g g in 2006 followed by laptops. From 2006 to 2011, the largest growth rate will be for laptops - as much as 72% AAGR from 2006 to 2011. Regionally, North America had about 21.4% of the market in 2006, followed by Europe at 16.4 %, Japan at 14.2%, and the rest of world at 47.8 %. Th There are less than a dozen players who are sharing the global l th d l h h i th l b l market in 2006. BY 2011, the number of companies producing MEMS microphones will double.
http://www.mindbranch.com/MEMS-MICROPHONES-Global-R3450-6/ S J PAWAR, MEMS and BIOMEMS, Even 2010-11 44
The MEMS silicon microphone market has become a hotbed of activity, spurred by record-breaking growth in consumer electronics products such as
hearing aids, cellular phones, p , cordless phones, headsets, and headphones. headphones
Initial entrants that included Knowles Acoustics (Dover Electronics (NYSE: DOV))), Akustika, and Sonion (Denmark) has grown to include Analog Devices Devices, Wolfson Microelectronics (UK), Freescale, STMicroelectronics (NYSE: STM), Infineon (NYSE: IFX) and Omron (Germany) (Germany). China suppliers entered the market in recent years and g g gy include Shangdong Goer Acoustics Technology Co. Ltd, Suzhou MEMSensing Microsystems Co. Ltd., and AAC Acoustic Technologies (Shenzhen) Co. Ltd.
http://seekingalpha.com/article/110901-the-future-of-the-mems-market S J PAWAR, MEMS and BIOMEMS, Even 2010-11 45
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Pressure Sensors MEMS pressure microsensors t i ll h i typically have a fl ibl di h flexible diaphragm th t that deforms in the presence of a pressure difference. The deformation is converted to an electrical signal at the sensor output. A pressure sensor can be used to sense the absolute air pressure within the intake manifold of an automobile engine, so that the amount of fuel required for each engine cylinder can be computed. The piezoresistors are patterned across the edges of a region where a silicon di h ili diaphragm will b micromachined. ill be i hi d The substrate is etched to create the diaphragm. The sensor die is then bonded to a glass substrate, creating a sealed vacuum cavity under the diaphragm diaphragm. The die is mounted on a package, where the topside of the diaphragm is exposed to the environment. The change in ambient pressure forces the downward deformation of the g diaphragm, resulting in a change of resistance of the piezoresistors. On-chip electronics measure the resistance change, which causes a corresponding voltage signal to appear at the output pin of the sensor package. package
Accelerometers Accelerometers are acceleration sensors sensors. An inertial mass suspended by springs is acted upon by acceleration forces that cause the mass to be deflected from its initial position position. This deflection is converted to an electrical signal, which appears at the sensor output.
The BMA220 digital sensor from Bosch Sensortec is the smallest digital acceleration sensor in LGA housing in the world it measures only 2 mm x 2 mm x 0 98 mm including LGA housing (14 0.98 mm, Jan 2011).
Inertial Sensors Inertial sensors are a type of accelerometer and are one of the principal commercial products that utilize surface micromachining. They are used as airbag deployment sensors in automobiles and as airbag-deployment automobiles, tilt or shock sensors. The application of these accelerometers to inertial measurement units (IMUs) is limited by the need to manually align and assemble them into three-axis systems, and by the resulting alignment tolerances, their lack of in-chip analog-to-digital conversion circuitry, and their lower limit of sensitivity. A three-axis force-balanced accelerometer has been designed at the University of California, Berkeley, to overcome some of limitations. The accelerometer was designed for the integrated MEMS/CMOS technology. t h l This technology involves a manufacturing technique where a singlelevel (plus a second electrical interconnect level) polysilicon micromachining process is integrated with 1 25 micron CMOS 1.25-micron CMOS.
Microengines A three-level polysilicon micromachining process has enabled the fabrication of devices with increased degrees of complexity. The process includes three movable levels of polysilicon each polysilicon, separated by a sacrificial oxide layer, plus a stationary level. Operation of the small gears at rotational speeds greater than 300,000 300 000 rpm has been demonstrated demonstrated. Microengines can be used to drive the wheels of microcombination locks. They can also be used in combination with a microtransmission to drive a pop-up mirror out of a plane. This device is known as a micromirror.
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Some other applications MEMS IC fabrication technologies have also allowed the g g manufacture of microtransmissions using sets of small and large gears interlocking with other sets of gears to transfer power. A recently developed MicroStar cross-connect fabric developed by Bell Labs is a micro-optoelectromechanical system device, is based on MEMS t h l b d technology. As a final example, MEMS technology has been used in fabricating vaporization microchambers for vaporizing liquid microthrusters for nanosatellites. nanosatellites The chamber is part of a microchannel with a height of 2-10 microns, made using silicon and glass substrates. The nozzle is fabricated in the silicon substrate just above a thin-film indium tin thin film oxide heater deposited on glass. Other examples as follows
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Digital micromirror device
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References
1. 1 2. 3. 4. Foundations of MEMS Ch F d i f MEMS, Chang Li Liu, P Pearson Ed Education i International, 2006. MEMS and MICROSYSTEM Design and Manufacture, Tai-Ran g , Hsu, Tata Mcgraw-Hill Publishing company Ltd., New Delhi, 2002. Microsystem Design, S. D. Senturia, Kluwer Academic Publishers, 2001. 2001 MEMS: Mainstream Process Integration, The Ziptronix Solution White paper
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NEMS Logical extension to MEMS
Imprint Lithography
Mold
Polymer Substrate
Yong Chen, Xeuma Li and Hylke Wiersma Chen and Gun-Young Jung
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Imprint Lithography
Pt
SiO2 Ti/Pt
Y. Chen, G.Y. Jung et al.

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Scanning probe microscope gp p

Laser Beam Vibrating Cantilever
AFM image
Surface
PS/PEO
(large ) AFM, STM, MFM, others

m
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A Few Nanostructures Made at UMass

100 nm dots 70 nm nanowires 200 nm rings 150 nm holes
18 nm pores
12 nm pores
14 nm dots
14 nm nanowires
13 nm rings
25 nm honeycomb
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STM
Image of Nickel Atoms
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Pushing Atoms Around

STM
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HOMEWORK This is individual assignment except for Mr. Vivek and Miss Menaka. Email to sjpawar@mnnit.ac.in
Foundations MEMS Fo ndations of MEMS, Chang Li Pearson Education Liu, Ed cation International, 2006, pp. 19-23
S.N. SN 1 S.N. 2 S.N. 3 S.N. 4 S.N. 5 S.N. SN 6 S.N. 7 S.N. 8 S.N. 9 S.N. 10 : Problem 1 4 1.4 : Problem 1.5 : Problem 1.6 : Problem 1.7 : Problem 1.8 : Problem 1 9 1.9 : Problem 1.10 : Problem 1.11 : Problem 1.11 : Problem 1.12, : Problem 1.13, : Problem 1.14 S.N. S N 11 S.N. 12 S.N. 13 S.N. 14 S.N. 15 S.N. 16 S.N. 17 S.N. S N 18 S.N. 19 : Problem 1 15 1.15 : Problem 1.15 : Problem 1.16 : Problem 1.16 : Problem 1.17 : Problem 1.17 : Problem 1.18 : 1.3.2 Sensor Type 1 3 2 Sensor-Type : 1.3.3 Sensor-Type
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AM-969 MEMS & BIO-MEMS

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Some Issues are relevant to both IC and MEMS

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Sensors and Actuators

Current C t Voltage Capacitance Resistance Inductance

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

take form of a sensor or an actuator

Sensor (e g thermometer) (e.g.,

Actuator (e.g., heater)

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

General Electronic Sensor

Typical Electronic Sensor System yp y

sensor data analog/digital g g

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Example Electronic Sensor Systems S t

analog sensor analyzed by a PC

multiple sensors displayed over internet

sensor processor comm.

sensor processor comm. 22

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

thermocouple: temperature difference compass (magnetic): direction

photodiode/phototransistor: photon energy (light)

Example Primary Transducers

membrane pressure sensor

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Temperature Sensor Options

Thermistors (thermally sensitive resistor)

typically have negative temperature coefficients

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Fiber-optic Temperature Sensor p p

Can be made small enough for biological implantation

GaAs semiconductor temperature probe

Example MEMS Transducers

Connecting Sensors to Microcontrollers Mi t ll

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

IC - Jack Kilby (1958)

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

CAGR (Compound Annual Growth Rate)

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

http://www.memsinvestorjournal.com/2006/04/mems_microphone.html S J PAWAR, MEMS and BIOMEMS, Even 2010-11 43

http://seekingalpha.com/article/110901-the-future-of-the-mems-market S J PAWAR, MEMS and BIOMEMS, Even 2010-11 45

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

Digital micromirror device

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11

S J PAWAR, MEMS and BIOMEMS, Even 2010-11