You are on page 1of 332

Advanced Design System 1.

5
Cir cuit Component s
Dist r ibut ed Component s
February 2001
ii
Notice
The infor mat ion cont ained in t his document is subject t o change wit hout not ice.
Agilent Technologies makes no war r ant y of any kind wit h r egar d t o t his mat er ial,
including, but not limit ed t o, t he implied war r ant ies of mer chant abilit y and t ness
for a par t icular pur pose. Agilent Technologies shall not be liable for er r or s cont ained
her ein or for incident al or consequent ial damages in connect ion wit h t he fur nishing,
per for mance, or use of t his mat er ial.
Warranty
A copy of t he specic war r ant y t er ms t hat apply t o t his soft war e pr oduct is available
upon r equest fr om your Agilent Technologies r epr esent at ive.
Restricted Rights Legend
Use, duplicat ion or disclosur e by t he U. S. Gover nment is subject t o r est r ict ions as set
for t h in subpar agr aph (c) (1) (ii) of t he Right s in Technical Dat a and Comput er
Soft war e clause at DFARS 252.227-7013 for DoD agencies, and subpar agr aphs (c) (1)
and (c) (2) of t he Commer cial Comput er Soft war e Rest r ict ed Right s clause at FAR
52.227-19 for ot her agencies.
Agilent Technologies
395 Page Mill Road
Palo Alt o, CA 94304 U.S.A.
Copyr ight 2001, Agilent Technologies. All Right s Reser ved.
iii
Contents
1 Finline Components
Finline Model Basis .................................................................................................. 1-1
BFINL (Bilateral Finline) ........................................................................................... 1-2
BFINLT (Bilateral Finline Termination) ...................................................................... 1-4
FSUB (Finline Substrate).......................................................................................... 1-6
IFINL (Insulated Finline) ........................................................................................... 1-8
IFINLT (Insulated Finline Termination)...................................................................... 1-10
UFINL (Unilateral Finline) ......................................................................................... 1-12
UFINLT (Unilateral Finline Termination).................................................................... 1-14
2 Microstrip Components
MACLIN (Microstrip Asymmetric Coupled Lines) ..................................................... 2-2
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) .............................. 2-5
MBEND (Microstrip Bend (Arbitrary Angle/Miter)) .................................................... 2-8
MBEND2 (90-degree Microstrip Bend (Mitered)) ..................................................... 2-11
MBEND3 (90-degree Microstrip Bend (Optimally Mitered)) ..................................... 2-13
MBSTUB (Microstrip Buttery Stub) ......................................................................... 2-15
MCFIL (Microstrip Coupled-Line Filter Section) ....................................................... 2-17
MCLIN (Microstrip Coupled Lines) ........................................................................... 2-19
MCORN 90-degree Microstrip Bend (Unmitered)..................................................... 2-21
MCROS (Microstrip Cross-Junction) ........................................................................ 2-23
MCROSO (Obsolete Libra Microstrip Cross-Junction) ............................................. 2-25
MCURVE (Microstrip Curved Bend) ......................................................................... 2-27
MCURVE2 (Microstrip Curved Bend) ....................................................................... 2-29
MGAP (Microstrip Gap) ............................................................................................ 2-31
MICAP1 (Microstrip Interdigital Capacitor (2-port)) .................................................. 2-33
MICAP2 (Microstrip Interdigital Capacitor (4-port)) .................................................. 2-36
MICAP3 (Microstrip Interdigital Capacitor (1-port)) .................................................. 2-39
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port)) ................................. 2-42
MLANG (Microstrip Lange Coupler) ......................................................................... 2-45
MLANG6 (Microstrip Lange Coupler (6-Fingered)) .................................................. 2-48
MLANG8 (Microstrip Lange Coupler (8-Fingered)) .................................................. 2-51
MLEF (Microstrip Line Open-End Effect).................................................................. 2-54
MLIN (Microstrip Line) .............................................................................................. 2-56
MLOC (Microstrip Open-Circuited Stub)................................................................... 2-58
MLSC (Microstrip Short-Circuited Stub) ................................................................... 2-60
MRIND (Microstrip Rectangular Inductor) ................................................................ 2-62
MRINDELA (Elevated Microstrip Rectangular Inductor)........................................... 2-65
MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer Substrate)) ... 2-69
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) ..................................... 2-73
iv
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, Three-Layer Substrate)) 2-76
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) .................................. 2-79
MRSTUB (Microstrip Radial Stub)............................................................................ 2-82
MSIND (Microstrip Round Spiral Inductor) ............................................................... 2-84
MSLIT (Microstrip Slit) .............................................................................................. 2-86
MSOP (Microstrip Symmetric Pair of Open Stubs)................................................... 2-89
MSTEP (Microstrip Step in Width)............................................................................ 2-91
MSUB (Microstrip Substrate).................................................................................... 2-93
MSUBST3 (Microstrip Three-Layer Substrate)......................................................... 2-95
MTAPER (Microstrip Width Taper)............................................................................ 2-97
MTEE (Microstrip T-Junction) ................................................................................... 2-98
MTEEO (Obsolete Libra Microstrip T-Junction) ........................................................ 2-100
MTFC (Microstrip Thin Film Capacitor) .................................................................... 2-102
RIBBON (Ribbon) ..................................................................................................... 2-105
TFC (Thin Film Capacitor) ........................................................................................ 2-107
TFR (Thin Film Resistor) .......................................................................................... 2-110
VIA (Tapered Via Hole in Microstrip) ........................................................................ 2-112
VIA2 (Cylindrical Via Hole in Microstrip)................................................................... 2-114
WIRE (Round Wire).................................................................................................. 2-116
3 Multilayer Interconnects
COMBINE2ML (Combine 2 Coupled-Line Components) ......................................... 3-2
COMBINE3ML (Combine 3 Coupled-Line Components) ......................................... 3-3
COMBINE4ML (Combine 4 Coupled-Line Components) ......................................... 3-4
COMBINE5ML (Combine 5 Coupled-Line Components) ......................................... 3-5
Coupled Lines, Constant Width & Spacing............................................................... 3-6
Coupled Lines, Variable Width & Spacing ................................................................ 3-8
MLACRNR (190-degree Corner, Changing Width)................................................... 3-10
Coupled 90-degree Corners, Changing Pitch........................................................... 3-11
MLCLE (Via Clearance)............................................................................................ 3-13
Coupled Angled Corners, Constant Pitch................................................................. 3-14
Coupled Crossovers ................................................................................................. 3-16
MLJCROSS (Cross Junction) ................................................................................... 3-18
MLJGAP (Open Gap) ............................................................................................... 3-19
MLJTEE (Tee Junction) ............................................................................................ 3-20
MLOPENSTUB (Open Stub) .................................................................................... 3-21
Coupled Radial Lines ............................................................................................... 3-22
Slanted Coupled Lines ............................................................................................. 3-24
MLSUBSTRATES..................................................................................................... 3-26
MLVIAHOLE (Via Hole) ............................................................................................ 3-30
MLVIAPAD (Via Pad) ................................................................................................ 3-31
v
4 Stripline Components
SBCLIN (Broadside-Coupled Lines in Stripline) ....................................................... 4-2
SBEND (Unmitered Stripline Bend).......................................................................... 4-5
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter) .................................................... 4-7
SCLIN (Edge-Coupled Lines in Stripline) ................................................................. 4-10
SCROS (Stripline Cross Junction)............................................................................ 4-12
SCURVE (Curved Line in Stripline) .......................................................................... 4-14
SLEF (Stripline Open End Effect)............................................................................. 4-16
SLIN (Stripline) ......................................................................................................... 4-18
SLINO (Offset Strip Transmission Line).................................................................... 4-20
SLOC (Stripline Open-Circuited Stub)...................................................................... 4-22
SLSC (Stripline Short-Circuited Stub) ...................................................................... 4-24
SMITER (90-degree Stripline Bend -- Optimally Mitered) ........................................ 4-26
SOCLIN (Offset-Coupled Lines in Stripline) ............................................................. 4-29
SSTEP (Stripline Step in Width) ............................................................................... 4-32
SSUB (Stripline Substrate) ....................................................................................... 4-34
SSUBO (Offset Stripline Substrate).......................................................................... 4-36
STEE (Stripline T-Junction)....................................................................................... 4-38
5 Suspended Substrate Components
SSCLIN (Suspended Substrate Coupled Lines)....................................................... 5-2
SSLIN (Suspended Substrate Line) ......................................................................... 5-4
SSSUB (Suspended Substrate) ............................................................................... 5-6
6 Transmission Line Components
CLIN (Ideal Coupled Transmission Lines) ................................................................ 6-2
CLINP (Lossy Coupled Transmission Lines) ............................................................ 6-3
COAX (Coaxial Cable).............................................................................................. 6-4
CoaxTee (Coaxial 3-Port T-Junction, Ideal, Lossless) .............................................. 6-6
RCLIN (Distributed R-C Network)............................................................................. 6-7
TLIN (Ideal 2-Terminal Transmission Line) ............................................................... 6-8
TLIN4 (Ideal 4-Terminal Transmission Line) ............................................................. 6-9
TLINP (2-Terminal Physical Transmission Line) ....................................................... 6-10
TLINP4 (4-Terminal Physical Transmission Line) ..................................................... 6-12
TLOC (Ideal Transmission Line Open-Circuited Stub) ............................................. 6-14
TLPOC (Physical Transmission Line Open-Circuited Stub)...................................... 6-15
TLPSC (Physical Transmission Line Short-Circuited Stub) ...................................... 6-17
TLSC (Ideal Transmission Line Short-Circuited Stub) .............................................. 6-19
7 Waveguide Components
CPW (Coplanar Waveguide) .................................................................................... 7-2
CPWCGAP (Coplanar Waveguide, Center-Conductor Gap) .................................... 7-4
CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors)) ......................... 7-6
vi
CPWCPL4 (Coplanar Waveguide Coupler) 4 Center Conductors)) ......................... 7-8
CPWEF (Coplanar Waveguide, Open-End Effect) ................................................... 7-10
CPWEGAP (Coplanar Waveguide, End Gap) .......................................................... 7-12
CPWG (Coplanar Waveguide with Lower Ground Plane) ........................................ 7-14
CPWOC (Coplanar Waveguide, Open-Circuited Stub)............................................. 7-16
CPWSC (Coplanar Waveguide, Short-Circuited Stub) ............................................. 7-18
CPWSUB (Coplanar Waveguide Substrate)............................................................. 7-20
RWG (Rectangular Waveguide) ............................................................................... 7-22
RWGINDF (Rectangular Waveguide Inductive Fin).................................................. 7-24
RWGT (Rectangular Waveguide Termination).......................................................... 7-26
8 Printed Circuit Board Components
PCB Model Basis and Limits .................................................................................... 8-1
Method of Analysis ............................................................................................. 8-1
Assumptions and Limitations.............................................................................. 8-2
References ......................................................................................................... 8-2
PCBEND (PCB Bend (Arbitrary Angle/Miter)) .......................................................... 8-3
PCCORN (Printed Circuit Corner) ............................................................................ 8-5
PCCROS Printed Circuit Cross-Junction.................................................................. 8-6
PCCURVE (PCB Curve)........................................................................................... 8-8
PCILC (Printed Circuit Inter-layer Connection)......................................................... 8-10
PCLIN1 (1 Printed Circuit Line) ................................................................................ 8-12
PCLIN2 (2 Printed Circuit Coupled Lines) ................................................................ 8-14
PCLIN3 (3 Printed Circuit Coupled Lines) ................................................................ 8-16
PCLIN4 (4 Printed Circuit Coupled Lines) ................................................................ 8-18
PCLIN5 (5 Printed Circuit Coupled Lines) ................................................................ 8-20
PCLIN6 (6 Printed Circuit Coupled Lines) ................................................................ 8-23
PCLIN7 (7 Printed Circuit Coupled Lines) ................................................................ 8-26
PCLIN8 (8 Printed Circuit Coupled Lines) ................................................................ 8-29
PCLIN9 (9 Printed Circuit Coupled Lines) ................................................................ 8-32
PCLIN10 (10 Printed Circuit Coupled Lines) ............................................................ 8-36
PCSTEP (PCB Symmetric Steps) ............................................................................ 8-40
PCSUB1 (1-Layer Printed Circuit Substrate)............................................................ 8-42
PCSUB2 (2-Layer Printed Circuit Substrate)............................................................ 8-44
PCSUB3 (3-Layer Printed Circuit Substrate)............................................................ 8-46
PCSUB4 (4-Layer Printed Circuit Substrate)............................................................ 8-48
PCSUB5 (5-Layer Printed Circuit Substrate)............................................................ 8-50
PCSUB6 (6-Layer Printed Circuit Substrate)............................................................ 8-52
PCSUB7 (7-Layer Printed Circuit Substrate)............................................................ 8-54
PCTAPER (PC Tapered Line)................................................................................... 8-56
PCTEE (Printed Circuit T-Junction) .......................................................................... 8-58
PCTRACE (Single PCB Line (Trace))....................................................................... 8-60
vii
Index
viii
Finline Model Basis 1-1
Chapter 1: Finline Components
Finline Model Basis
For each nline component , t he model is a r ect angular waveguide wit h t he cut off
fr equency and t he dielect r ic const ant at cut off modied by t he dielect r ic slab and
conduct ing st r ip. Conduct or and dielect r ic losses ar e not included.
Spect r al domain numer ical r esult s pr ovide t he basis for unilateral and bilateral
nlines. The quot ed accur acy, wit h r espect t o spect r al domain, ar e t0.6 per cent for
equivalent dielect r ic const ant at cut off and cut off wavelengt h for unilat er al nline
and t0.1 per cent for phase velocit y of bilat er al nline. The equat ions for insulated
nlines ar e analyt ical cur ve-t s t o numer ical r esult s of t r ansmission line mat r ix
analysis (TLM). The cit ed accur acy for equivalent dielect r ic const ant and cut off
fr equency is 0.6 per cent compar ed t o t he TLM r esult s. All accur acies ar e for
par amet er values wit hin t he r ange of usage.
1-2 BFINL (Bilateral Finline)
Finline Components
BFINL (Bilateral Finline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
L = lengt h of nline, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. See t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
3. This component has no default ar t wor k associat ed wit h it .
D
METAL
DIELECTRIC
B
32
------ D B
A
64
------ S
A
8
----
BFINL (Bilateral Finline) 1-3
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J an. 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-4 BFINLT (Bilateral Finline Termination)
Finline Components
BFINLT (Bilateral Finline Termination)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. See t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
3. This component has no default ar t wor k associat ed wit h it .
D
METAL
DIELECTRIC
B
32
------ D B
A
64
------ S
A
8
----
BFINLT (Bilateral Finline Termination) 1-5
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J an. 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-6 FSUB (Finline Substrate)
Finline Components
FSUB (Finline Substrate)
Symbol
Illustration
Parameters
Er = subst r at e dielect r ic const ant
Fdw = t hickness of slab, in specied unit s
Fa = inside widt h of enclosur e, in specied unit s
Fb = inside height of enclosur e, in specied unit s
Cond = conduct or conduct ivit y
Range of Usage
Er 1.0
Fdw > 0
Fa > 0
Fb > 0
Cond 0
Notes/Equations/References
1. Refer t o t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. FSUB is r equir ed for all nline component s.
Fa
Fb
Er
DIELECTRIC
METAL
Fdw
FSUB (Finline Substrate) 1-7
3. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J an. 1985.
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-8 IFINL (Insulated Finline)
Finline Components
IFINL (Insulated Finline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
L = lengt h of nline, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. Refer t o t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
D
METAL
DIELECTRIC
B
32
------ D B
A
64
------ S
A
4
----
IFINL (Insulated Finline) 1-9
3. This component has no default ar t wor k associat ed wit h it .
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J anuar y 1985.
5. Pr ot ap Pr amanick, and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-10 IFINLT (Insulated Finline Termination)
Finline Components
IFINLT (Insulated Finline Termination)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. Refer t o t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
3. This component has no default ar t wor k associat ed wit h it .
D
METAL
DIELECTRIC
B
32
------ D B
A
64
------ S
A
4
----
IFINLT (Insulated Finline Termination) 1-11
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J anuar y 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-12 UFINL (Unilateral Finline)
Finline Components
UFINL (Unilateral Finline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
L = lengt h of nline, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. Refer t o t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
D
METAL DIELECTRIC
B
32
------ D B
A
64
------ S
A
4
----
UFINL (Unilateral Finline) 1-13
3. This component has no default ar t wor k associat ed wit h it .
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J anuar y 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-14 UFINLT (Unilateral Finline Termination)
Finline Components
UFINLT (Unilateral Finline Termination)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
D = widt h of gap, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
D = gap widt h
A = inside enclosur e widt h (fr om associat ed FSUB)
B = inside enclosur e height (fr om associat ed FSUB)
S = t hickness of subst r at e (fr om associat ed FSUB)
Notes/Equations/References
1. Refer t o t he sect ion Finline Model Basis on page 1-1 at t he beginning of t his
chapt er.
2. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
3. This component has no default ar t wor k associat ed wit h it .
D
METAL DIELECTRIC
B
32
------ D B
A
64
------ S
A
4
----
UFINLT (Unilateral Finline Termination) 1-15
4. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis Equat ions and
Synt hesis Technique for Unilat er al Finlines, IEEE Transactions on Microwave
Theory and Techniques, Vol. MTT-33, No. 1, pp. 24-30, J anuar y 1985.
5. Pr ot ap Pr amanick and Pr akash Bhar t ia, Simple For mulae for Disper sion in
Bilat er al Fin-Lines, AEU, Vol. 39, No. 6, pp. 383-386, 1985.
6. Pr ot ap Pr amanick and Pr akash Bhar t ia, Accur at e Analysis and Synt hesis
Equat ions for Insulat ed Fin-Lines, AEU, Vol. 39, No. 1, pp. 31-36, 1985.
1-16 UFINLT (Unilateral Finline Termination)
Finline Components
2-1
Chapter 2: Microstrip Components
2-2 MACLIN (Microstrip Asymmetric Coupled Lines)
Microstrip Components
MACLIN (Microstrip Asymmetric Coupled Lines)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = widt h of conduct or 1, in specied unit s
W2 = widt h of conduct or 2, in specied unit s
S = conduct or spacing, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
WA = (for Layout Opt ion) widt h of line t hat connect s t o pin 1
WB = (for Layout Opt ion) widt h of line t hat connect s t o pin 2
WC = (for Layout Opt ion) widt h of line t hat connect s t o pin 3
WD = (for Layout Opt ion) widt h of line t hat connect s t o pin 4
Range of Usage
1 Er 18
T 0
0.1 H W1 10.0 H
0.1 H W2 10.0 H
MACLIN (Microstrip Asymmetric Coupled Lines) 2-3
0.1 H S 10.0 H
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Simulat ion fr equency (GHz)
W1 > 0, W2 > 0, S > 0, L > 0 for layout
WA 0, WB 0, WC 0, WD 0
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
The even- and odd-mode char act er ist ics of t he micr ost r ip lines ar e calculat ed
using t he for mula developed by Kir schning and J ansen for par allel coupled
micr ost r ip lines, and t he for mula developed by Hammer st ad and J ensen for
single micr ost r ip line. Disper sion of t he effect ive dielect r ic const ant is included.
The per-unit -lengt h coupling capacit ances ar e t hen der ived for t he asymmet r ic
case using a model developed for Agilent by Vijai Tr ipat hi. The even- and
odd-mode impedance and admit t ance mat r ices ar e calculat ed based on t he
coupling capacit ances. The r esult is used t o calculat e t he net wor k par amet er s of
t he dist r ibut ed, coupled-line model by Tr ipat hi's met hod. Conduct or losses ar e
ignor ed.
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h t he
inner edges of t he conduct or st r ips; if t he connect ing t r ansmission lines ar e
nar r ower t han t he coupled lines, t hey will be cent er ed on t he conduct or st r ips.
5. Vijai K. Tr ipat hi, Asymmet r ic Coupled Tr ansmission Lines in an
Inhomogeneous Medium, MTT-23, Sept ember 1975.
6. Vijai K. Tr ipat hi and Y. K. Chin. Analysis of t he Gener al Nonsymmet r ical
Dir ect ional Coupler wit h Ar bit r ar y Ter minat ions, Proceedings of the IEEE, Vol.
129, December 1982, p. 360.
25
H m m ( )
---------------------
2-4 MACLIN (Microstrip Asymmetric Coupled Lines)
Microstrip Components
7. M. Kir schning and R. H. J ansen. Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ic of Par allel Coupled Micr ost r ip Lines,
MTT-32, J anuar y 1984 (wit h cor r ect ions by Agilent ).
8. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) 2-5
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = widt h of conduct or 1, in specied unit s
W2 = widt h of conduct or 2, in specied unit s
W3 = widt h of conduct or 3, in specied unit s
S1 = spacing bet ween conduct or s 1 and 2, in specied unit s
S2 = spacing bet ween conduct or s 2 and 3, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
WA = (for Layout Opt ion) widt h of line t hat connect s t o pin 1
WB = (for Layout Opt ion) widt h of line t hat connect s t o pin 2
WC = (for Layout Opt ion) widt h of line t hat connect s t o pin 3
WD = (for Layout Opt ion) widt h of line t hat connect s t o pin 4
2-6 MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines)
Microstrip Components
Range of Usage
0.1 H W1 10.0 H
0.1 H W2 10.0 H
0.1 H W3 10.0 H
0.1 H S1 10.0 H
0.1 H S2 10.0 H
1.01 Er 18
T 0
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Simulat ion fr equency (GHz)
W1 > 0, W2 > 0, W3 > 0, S1 > 0, S2 > 0, L > 0 for layout
WA 0, WB 0, WC 0, WD 0
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
The even- and odd-mode char act er ist ics of t he micr ost r ip lines ar e calculat ed
using t he for mula developed by Kir schning and J ansen for par allel coupled
micr ost r ip lines, and t he for mula developed by Hammer st ad and J ensen for
single micr ost r ip line. The per-unit -lengt h coupling capacit ances ar e t hen
der ived for t he asymmet r ic case using a model developed for Agilent by Vijai
Tr ipat hi. The even- and odd-mode impedance and admit t ance mat r ices ar e
calculat ed based on t he coupling capacit ances. The r esult is used t o calculat e
t he net wor k par amet er s of t he dist r ibut ed, coupled-line model by Tr ipat hi's
met hod. Conduct or loss and disper sion ar e ignor ed.
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h inner
edges of t he conduct or st r ips at pins 1, 3, 4 and 6. If t he connect ing
t r ansmission lines ar e nar r ower t han t he coupled lines, t hey will be cent er ed on
25
H m m ( )
---------------------
MACLIN3 (Microstrip 3-Conductor Asymmetric Coupled Lines) 2-7
t he conduct or st r ips. At pins 2 and 5, t he assumpt ion is t hat t he abut t ing
t r ansmission lines ar e nar r ower or t he same widt h as t he cent er coupled line.
4. Vijai K. Tr ipat hi On t he Analysis of Symmet r ical Thr ee-Line Micr ost r ip
Cir cuit s, MTT-25, Sept ember 1977.
5. M. Kir schning and R. H. J ansen. Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ic of Par allel Coupled Micr ost r ip Lines,
MTT-32, J anuar y 1984 (wit h cor r ect ions by Agilent ).
6. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
2-8 MBEND (Microstrip Bend (Arbitrary Angle/Miter))
Microstrip Components
MBEND (Microstrip Bend (Arbitrary Angle/Miter))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Angle = angle of bend, in degr ees
M = mit er fr act ion (M=X/D)
Temp = physical t emper at ur e, in C
Range of Usage
1 Er 128
90 Angle 90
MBEND (Microstrip Bend (Arbitrary Angle/Miter)) 2-9
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
W 0 for layout
Angle = any value for layout
Notes/Equations/References
1. For t he unmit er ed, 90 condit ion, t he fr equency-domain analyt ical model is t he
lumped component , r ight -angle bend model pr oposed by Gupt a et al. Ot her wise,
t he lumped component model pr oposed by J ansen is used. The Hammer st ad
and J ensen micr ost r ip for mulas ar e used t o calculat e r efer ence plane shift s in
t he J ansen model. Disper sion and conduct or loss ar e not included in t he model.
2. For r ight -angle bends, use MBEND2, MBEND3, or MCORN.
3. Two possible r efer ence plane locat ions ar e available:
Small mit er s wher e t he r efer ence planes line up wit h t he inner cor ner of t he
bend, or
Lar ge mit er s wher e t he r efer ence planes line up wit h t he cor ner bet ween t he
connect ing st r ip and t he mit er ed sect ion
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. In layout , a posit ive value for Angle dr aws a bend in t he count er clockwise
dir ect ion fr om pin 1 t o 2; a negat ive value for Angle dr aws a bend in t he
clockwise dir ect ion.
6. M. Kir schning, R. H. J ansen, and N. H. L. Kost er. Measur ement and
Comput er-Aided Modeling of Micr ost r ip Discont inuit ies by an Impr oved
Resonat or Met hod, 1983 IEEE MTT-S International Microwave S ymposium
Digest, May 1983, pp. 495-497.
7. R. H. J ansen, Pr obleme des Ent war fs und der Messt echnik von Planar en
Schalt ungen, 1. Teil, NTZ, Vol 34, J uly 1981, pp. 412-417.
8. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
0.01
W
H
----- 100
2-10 MBEND (Microstrip Bend (Arbitrary Angle/Miter))
Microstrip Components
9. K. C. Gupt a, R. Gar g, and R. Chadha, Computer-Aided Design of Microwave
Circuits, 1981, p. 195.
Equivalent Circuit
MBEND2 (90-degree Microstrip Bend (Mitered)) 2-11
MBEND2 (90-degree Microstrip Bend (Mitered))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.2 6.0
2.36 Er 10.4
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
W 0 for layout
Notes/Equations/References
1. The fr equency-domain model is an empir ically-based analyt ical model t hat
consist s of a st at ic, lumped, equivalent cir cuit . The equivalent cir cuit
W
H
-----
12
H m m ( )
---------------------
2-12 MBEND2 (90-degree Microstrip Bend (Mitered))
Microstrip Components
par amet er s ar e calculat ed based on t he expr essions developed by Kir schning,
J ansen and Kost er accor ding t o t he following for mula.
pF/m
nH/m
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. M. Kir schning, R. H. J ansen, and N. H. L. Kost er. Measur ement and
Comput er-Aided Modeling of Micr ost r ip Discont inuit ies by an Impr oved
Resonat or Met hod, 1983 IEEE MTT-S International Microwave S ymposium
Digest, May 1983, pp. 495-497.
Equivalent Circuit
C
H
-----
W
H
----- 7.6
r
3.8
W
H
----- 3.93
r
0.62 + ( ) + + =
L
H
----- 441.2712 1 1.062 0.177
W
H
-----
,
_
0.947
exp

' ;

=
L L
C
MBEND3 (90-degree Microstrip Bend (Optimally Mitered)) 2-13
MBEND3 (90-degree Microstrip Bend (Optimally Mitered))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
2.5 Er 25
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
W 0 for layout
X
D
W
0.5
W
H
----- 2.75
15
H m m ( )
---------------------
2-14 MBEND3 (90-degree Microstrip Bend (Optimally Mitered))
Microstrip Components
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model. The
opt imal chamfer ed bend dimensions ar e calculat ed based on t he expr ession
developed by Douville and J ames. The r esult ing bend is modeled as a mat ched
t r ansmission line of lengt h, 2l
o
. This lengt h is calculat ed fr om cur ve t s t o t he
gr aphical dat a given in t he r efer ences. In addit ion, disper sion is account ed for
in t he t r ansmission line model. Conduct or losses ar e ignor ed.
2. Opt imum mit er is given by:
wher e
H = subst r at e t hickness
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. R. J. P. Douville and D. S. J ames, Exper iment al Char act er izat ion of Micr ost r ip
Bends and Their Fr equency Dependent Behavior, 1973 IEEE Conference
Digest, Oct ober 1973, pp. 24-25.
5. R. J. P. Douville and D. S. J ames, Exper iment al St udy of Symmet r ic Micr ost r ip
Bends and Their Compensat ion, IEEE Transactions on Microwave Theory and
Techniques, Vol. MTT-26, Mar ch 1978, pp. 175-181.
6. Reinmut K. Hoffman, Handbook of Microwave Integrated Circuits, Ar t ech
House, 1987, pp. 267-309.
Equivalent Circuit
X
D
----- 0.52 0.65 e
1.35 W H ( ) ( )
+ =
Z
0
Zlo
MBSTUB (Microstrip Buttery Stub) 2-15
MBSTUB (Microstrip Buttery Stub)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = widt h of feed line, in specied unit s
Ro = out er r adius of cir cular sect or, in specied unit s
Angle = angle subt ended by cir cular sect or, in degr ees
D = inser t ion dept h of cir cular sect or in feed line, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.01 100
Angle
W
H
-----
2-16 MBSTUB (Microstrip Buttery Stub)
Microstrip Components
Ro >
Angle < 90
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model account s for conduct or and dielect r ic
losses.
2. It is assumed t hat only TM
on
r adial modes ar e excit ed. This r equir es Angle t o
be less t han 90 degr ees.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. F. Giannini, M. Ruggier i, and J. Vr ba, Shunt -Connect ed Micr ost r ip Radial
St ubs, IEEE Transaction, Microwave Theory and Techniques, Vol. MTT-34, No.
3, Mar ch 1986, pp. 363-366.
6. F. Giannini, R. Sor r ent ino, and J. Vr ba, Planar Cir cuit Analysis of Micr ost r ip
Radial St ub, IEEE Transaction, Microwave Theory and Techniques, Vol.
MTT-32, No. 12, December 1984, pp. 1652-1655.
D
An gl e 2 ( ) cos
--------------------------------------
MCFIL (Microstrip Coupled-Line Filter Section) 2-17
MCFIL (Microstrip Coupled-Line Filter Section)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
S = spacing bet ween lines, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout Opt ion) widt h of line t hat connect s t o pin 1
W2 = (for Layout Opt ion) widt h of line t hat connect s t o pin 2
Range of Usage
1 Er 18
0.1
W
H
----- 10
0.1
S
H
----- 10
2-18 MCFIL (Microstrip Coupled-Line Filter Section)
Microstrip Components
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
W 0, S 0, L 0 for layout
W1 0, W2 0
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
The per-unit -lengt h coupling capacit ances ar e calculat ed using t he for mula
developed by Kir schning and J ansen for par allel coupled micr ost r ip lines, and
t he for mula developed by Hammer st ad and J ensen for single micr ost r ip line.
Disper sion, end effect , and conduct or loss ar e included. The even- and odd-mode
line impedances ar e calculat ed based on t he coupling capacit ances and
conduct or losses. The r esult is used t o calculat e t he net wor k par amet er s of t he
dist r ibut ed, coupled-line model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h t he
inner edges of t he conduct or st r ips. If t he connect ing t r ansmission lines ar e
nar r ower t han t he coupled lines, t hey will be cent er ed on t he conduct or st r ips.
5. R. Gar g and I. J. Bahl. Char act er ist ics of Coupled Micr ost r iplines, MTT-27,
J uly 1979.
6. M. Kir schning and R. H. J ansen. Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ic of Par allel Coupled Micr ost r ip Lines,
MTT-32, J anuar y 1984 (wit h cor r ect ions by Agilent ).
7. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409
25
H m m ( )
---------------------
MCLIN (Microstrip Coupled Lines) 2-19
MCLIN (Microstrip Coupled Lines)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
S = space bet ween lines, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout Opt ion) widt h of line t hat connect s t o pin 1
W2 = (for Layout Opt ion) widt h of line t hat connect s t o pin 2
W3 = (for Layout Opt ion) widt h of line t hat connect s t o pin 3
W4 = (for Layout Opt ion) widt h of line t hat connect s t o pin 4
Range of Usage
0.1 H W 10.0 H
0.1 H S 10.0 H
1 Er 18
T 0
2-20 MCLIN (Microstrip Coupled Lines)
Microstrip Components
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
W 0, S 0, L 0 for layout
W1 0, W2 0, W3 0, W4 0
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
The per-unit -lengt h coupling capacit ances ar e calculat ed using t he for mula
developed by Kir schning and J ansen for par allel coupled micr ost r ip lines, and
t he for mula developed by Hammer st ad and J ensen for single micr ost r ip line.
Disper sion and conduct or loss ar e included. The even- and odd-mode line
impedances ar e calculat ed based on t he coupling capacit ances and conduct or
losses. The r esult is used t o calculat e t he net wor k par amet er s of t he
dist r ibut ed, coupled-line model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h t he
inner edges of t he conduct or st r ips. If t he connect ing t r ansmission lines ar e
nar r ower t han t he coupled lines, t hey will be cent er ed on t he conduct or st r ips.
5. R. Gar g and I. J. Bahl. Char act er ist ics of Coupled Micr ost r iplines, MTT-27,
J uly 1979.
6. M. Kir schning and R. H. J ansen. Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ic of Par allel Coupled Micr ost r ip Lines,
MTT-32, J anuar y 1984 (wit h cor r ect ions by Agilent ).
7. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
25
H m m ( )
---------------------
MCORN 90-degree Microstrip Bend (Unmitered) 2-21
MCORN 90-degree Microstrip Bend (Unmitered)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
2.36 Er 10.4
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant
H = subst r at e t hickness
1
0.2
W
H
----- 6.0
12
H m m ( )
---------------------
2-22 MCORN 90-degree Microstrip Bend (Unmitered)
Microstrip Components
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model which
consist s of a st at ic, lumped, equivalent cir cuit . The equivalent cir cuit
par amet er s ar e calculat ed based on t he expr essions developed by Kir schning,
J ansen and Kost er accor ding t o t he following for mula.
pF/m
nH/m
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. M. Kir schning, R. H. J ansen, and N. H. L. Kost er. Measur ement and
Comput er-Aided Modeling of Micr ost r ip Discont inuit ies by an Impr oved
Resonat or Met hod, 1983 IEEE MTT-S International Microwave S ymposium
Digest, May 1983, pp. 495-497.
4. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951,
pp. 312-313.
Equivalent Circuit
C
H
-----
W
H
----- 2.6
r
5.64
W
H
----- 10.35
r
2.5 + ( ) + + =
L
H
----- 220.6356
1 1.35 0.18
W
H
-----
,
_
1.39
exp

' ;

=
C
L L
MCROS (Microstrip Cross-Junction) 2-23
MCROS (Microstrip Cross-Junction)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h of line at pin 1, in specied unit s
W2 = conduct or widt h of line at pin 2, in specied unit s
W3 = conduct or widt h of line at pin 3, in specied unit s
W4 = conduct or widt h of line at pin 4, in specied unit s
Range of Usage
0.25 W
i
/H 8
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Er 50
2-24 MCROS (Microstrip Cross-Junction)
Microstrip Components
Notes/Equations/References
1. This micr ost r ip cr oss model is der ived by cur ve t t ing t he r esult s of micr ost r ip
cr oss simulat ions of an Agilent int er nal elect r omagnet ic eld solver. The new
micr ost r ip cr oss model can be applied t o t he most commonly used subst r at es
including dur iod, alumina, and GaAs. The r ange of validit y of t he model is
fur t her ext ended for use in micr owave and RF cir cuit design applicat ions.
The induct ance equat ions ar e invar iant t o t he r elat ive dielect r ic const ant on t he
subst r at e. Disper sion and conduct or loss ar e not included.
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. In layout , all pins ar e cent er ed at t he cor r esponding edges.
4. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, 1981, pp. 197-199.
Equivalent Circuit
T
1
T
2
T
3
T
4
C
1
C
2
C
3
C
4
L
1
L
3
L
4
L
2
L
5 C
5
L
6
MCROSO (Obsolete Libra Microstrip Cross-Junction) 2-25
MCROSO (Obsolete Libra Microstrip Cross-Junction)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h of line at pin 1, in specied unit s
W2 = conduct or widt h of line at pin 2, in specied unit s
W3 = conduct or widt h of line at pin 3, in specied unit s
W4 = conduct or widt h of line at pin 4, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.4 W
i
/H 2.5
wher e
H = subst r at e t hickness (fr om associat ed Subst )
2-26 MCROSO (Obsolete Libra Microstrip Cross-Junction)
Microstrip Components
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model t hat
consist s of a st at ic, lumped, equivalent cir cuit . The equivalent cir cuit
par amet er s ar e calculat ed based on t he expr essions developed by Gupt a et al.
The capacit ance equat ions ar e modied t o t ake int o account t he r elat ive
dielect r ic const ant of t he mat er ial accor ding t o t he following for mula.
The induct ance equat ions ar e invar iant t o t he r elat ive dielect r ic const ant on t he
subst r at e. Disper sion and conduct or loss ar e not included.
2. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
3. In layout , all pins ar e cent er ed at t he cor r esponding edges.
4. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, 1981, pp. 197-199.
Equivalent Circuit
C
x

r
su b
= ( ) C
x

r
9.9 = ( )
Z
o
(
r
9.9 w Wx ) = , =
Z
o

r
su b
w Wx = , = ( )
----------------------------------------------------------

ef f

r
su b
w Wx = , = ( )

ef f

r
9.9 w Wx = , = ( )
------------------------------------------------------------- =
T
1
T
2
T
3
T
4
C
1
C
2
C
3
C
4
L
1
L
3
L
4
L
2
L
5
MCURVE (Microstrip Curved Bend) 2-27
MCURVE (Microstrip Curved Bend)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Angle = angle subt ended by t he bend, in degr ees
Radius = r adius (measur ed t o st r ip cent er line), in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.01 H W 100 H
180 Angle 180
Radius W/2
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Radius
Angle
2-28 MCURVE (Microstrip Curved Bend)
Microstrip Components
Notes/Equations/References
1. The micr ost r ip cur ved bend is modeled in t he fr equency domain as an
equivalent piece of st r aight micr ost r ip line. The micr ost r ip line is modeled
using t he MLIN component , including conduct or loss, dielect r ic loss and
disper sion. A cor r ect ion for nit e line t hickness is applied t o t he line widt h.
The lengt h of t he equivalent st r aight micr ost r ip sect ion is equal t o t he pr oduct
of t he cent er line r adius and t he angle in r adians.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. In layout , a posit ive value for Angle species a count er clockwise cur vat ur e; a
negat ive value species a clockwise cur vat ur e.
MCURVE2 (Microstrip Curved Bend) 2-29
MCURVE2 (Microstrip Curved Bend)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
Angle = angle of bend, in degr ees
Radius = r adius (measur ed t o st r ip cent er line), in specied unit s
NMode = number of modes (see not es)
Temp = physical t emper at ur e, in C
Range of Usage
0.01 H W 100 H
360 Angle 360
W Radius 100 W
NMode = 0,1,2....
wher e
Radius
Angle
2-30 MCURVE2 (Microstrip Curved Bend)
Microstrip Components
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is based on a magnet ic wall waveguide
model developed by Weisshaar and Tr ipat hi. The model includes t he effect of
higher or der modes of pr opagat ion. Conduct or loss, dielect r ic loss, and
disper sion of bot h effect ive dielect r ic const ant and char act er ist ic impedance ar e
also included.
2. NMode=1 or, at most , NMode=2 should usually pr ovide sat isfact or y accur acy.
Incr easing NMode for impr oving accur acy r esult s in signicant ly incr eased
simulat ion t ime and addit ional memor y r equir ement s.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. In layout , a posit ive value for Angle species a count er clockwise cur vat ur e; a
negat ive value species a clockwise cur vat ur e.
6. A. Weisshaar, S. Luo, M. Thor bur n, V. K. Tr ipat hi, M. Goldfar b, J. L. Lee, and E.
Reese. Modeling of Radial Micr ost r ip Bends, IEEE MTT-S International
Microwave S ymposium Digest, Vol. III, May 1990, pp. 1051-1054.
7. A. Weisshaar and V. K. Tr ipat hi. Per t ur bat ion Analysis and Modeling of
Cur ved Micr ost r ip Bends, IEEE Transactions on Microwave Theory and
Techniques, Vol. 38, No. 10, Oct ober 1990, pp. 1449-1454.
MGAP (Microstrip Gap) 2-31
MGAP (Microstrip Gap)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
S = lengt h of gap (spacing), in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
1 Er 15
0.1 3.0
0.2
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model t hat
consist s of a lumped component , equivalent cir cuit . The equivalent cir cuit
par amet er s ar e calculat ed based on t he expr essions developed by Kir schning,
J ansen and Kost er. Disper sion is included in t he capacit ance calculat ions.
W
H
-----
S
H
-----
2-32 MGAP (Microstrip Gap)
Microstrip Components
2. This new ver sion of t he MGAP component impr oves t he simulat ion accur acy of
gap capacit ance.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. E. Hammer st ad, Comput er Aided Design of Micr ost r ip Coupler s wit h Accur at e
Discont inuit y Models, IEEE MTT-S International Microwave S ymposium
Digest, J une 1981, pp. 54-56 (wit h modicat ions).
5. M. Kir schning, J ansen, R.H., and Kost er, N. H. L. Measur ement and
Comput er-Aided Modeling of Micr ost r ip Discont inuit ies by an Impr oved
Resonat or Met hod, IEEE MTT-S International Microwave S ymposium Digest,
May 1983, pp. 495-497.
6. N. H. L Kost er and R. H. J ansen. The Equivalent Cir cuit of t he Asymmet r ical
Ser ies Gap in Micr ost r ip and Suspended Subst r at e Lines, IEEE Trans. on
Microwave Theory and Techniques, Vol. MTT-30, Aug. 1982, pp. 1273-1279.
Equivalent Circuit
C
g
C
p
C
p
MICAP1 (Microstrip Interdigital Capacitor (2-port)) 2-33
MICAP1 (Microstrip Interdigital Capacitor (2-port))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = nger widt h, in specied unit s
G = gap bet ween nger s, in specied unit s
Ge = gap at end of nger s, in specied unit s
L = lengt h of over lapped r egion, in specied unit s
Np = number of nger pair s (an int eger )
Wt = widt h of int er connect , in specied unit s
Wf = widt h of feedline, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Er 12.5
T 0.015 H
Wf
Wt
Ge
Wf
Wt
2-34 MICAP1 (Microstrip Interdigital Capacitor (2-port))
Microstrip Components
0.05 H W 0.8 H
0.025 H G 0.45 H
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model
developed for Agilent by William J. Get singer. Refer ences [6], [7], and [8] ar e
supplement al.
The digit s of t he st r uct ur e ar e assumed t o be par t of an innit e ar r ay excit ed on
an even- and odd-mode basis. Each component in t his ar r ay is a unit cell
bounded by magnet ic walls. The model calculat es t he per-unit -lengt h
admit t ance and impedance mat r ices (even and odd modes) for each cell. This
calculat ion is based on t he even and odd mode capacit ances, t he conduct or loss
and t he subst r at e dielect r ic loss. The capacit ances ar e calculat ed by a confor mal
mapping t echnique. Conduct or losses ar e calculat ed using Wheeler 's met hod.
Cor r ect ions for nit e st r ip t hickness and end effect s ar e included. Net wor k
par amet er s of t he t r ansmission line model of each cell ar e calculat ed fr om t he
admit t ance and impedance mat r ices. The cells ar e combined t o fr om t he
complet e model including end effect s. Micr ost r ip disper sion effect s ar e included
in t his model.
2. This component is int ended for ser ies connect ion.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. G. Alley, Int er digit al Capacit or s and Their Applicat ion t o Lumped-Element
Micr owave Int egr at ed Cir cuit s, IEEE Trans. MTT-18, December 1970, pp.
1028-1033 (wit h addit ions by Agilent ).
2.4
H m m ( )
---------------------
MICAP1 (Microstrip Interdigital Capacitor (2-port)) 2-35
6. R. Esfandiar i, D. Maku, and M. Sir acusa, Design of Int er digit at ed Capacit or s
and Their Applicat ion t o Gallium-Ar senide Monolit hic Filt er s, IEEE Trans.
MTT, Vol. 31, No. 1, J anuar y 1983, pp. 57-64.
7. X. Y. She and Y. L. Chow. Int er digit al micr ost r ip capacit or as a four-por t
net wor k, IEEE Proceedings, Pt . H, Vol. 133, 1986, pp. 191-197.
2-36 MICAP2 (Microstrip Interdigital Capacitor (4-port))
Microstrip Components
MICAP2 (Microstrip Interdigital Capacitor (4-port))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = nger widt h, in specied unit s
G = gap bet ween nger s, in specied unit s
Ge = gap at end of nger s, in specied unit s
L = lengt h of over lapped r egion, in specied unit s
Np = number of nger pair s (an int eger )
Wt = widt h of int er connect , in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Er 12.5
T 0.015 H
0.05 H W 0.8 H
Ge
Wt
Wt
MICAP2 (Microstrip Interdigital Capacitor (4-port)) 2-37
0.025 H G 0.45 H
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model
developed for Agilent by William J. Get singer. Refer ences [6], [7], and [8] ar e
supplement al.
The digit s of t he st r uct ur e ar e assumed t o be par t of an innit e ar r ay excit ed on
an even- and odd-mode basis. Each component in t his ar r ay is a unit cell
bounded by magnet ic walls. The model calculat es t he per-unit -lengt h
admit t ance and impedance mat r ices (even and odd modes) for each cell. This
calculat ion is based on t he even and odd mode capacit ances, t he conduct or loss
and t he subst r at e dielect r ic loss. The capacit ances ar e calculat ed by a confor mal
mapping t echnique. Conduct or losses ar e calculat ed using Wheeler 's met hod.
Cor r ect ions for nit e st r ip t hickness and end effect s ar e included. Net wor k
par amet er s of t he t r ansmission line model of each cell ar e calculat ed fr om t he
admit t ance and impedance mat r ices. The cells ar e combined t o fr om t he
complet e model including end effect s. Micr ost r ip disper sion effect s ar e include
in t his model.
2. This component is used when a cascade congur at ion is not appr opr iat e.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. G. Alley, Int er digit al Capacit or s and Their Applicat ion t o Lumped-Element
Micr owave Int egr at ed Cir cuit s, IEEE Trans. MTT-18, December 1970, pp.
1028-1033 (wit h addit ions by Agilent ).
6. R. Esfandiar i, D. Maku and M. Sir acusa. Design of Int er digit at ed Capacit or s
and Their Applicat ion t o Gallium-Ar senide Monolit hic Filt er s, IEEE Trans.
MTT, Vol. 31, No. 1, J anuar y 1983, pp. 57-64.
2.4
H m m ( )
---------------------
2-38 MICAP2 (Microstrip Interdigital Capacitor (4-port))
Microstrip Components
X. Y. She and Y. L. Chow. Int er digit al micr ost r ip capacit or as a four-por t net wor k,
IEEE Proceedings, Pt . H, Vol. 133, 1986, pp. 191-197.
MICAP3 (Microstrip Interdigital Capacitor (1-port)) 2-39
MICAP3 (Microstrip Interdigital Capacitor (1-port))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = nger widt h, in specied unit s
G = gap bet ween nger s, in specied unit s
Ge = gap at end of nger s, in specied unit s
L = lengt h of over lapped r egion, in specied unit s
Np = number of nger pair s (an int eger )
Wt = widt h of int er connect , in specied unit s
Wf = widt h of t he feedline, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Er 12.5
T 0.015 H
0.05 H W 0.8 H
Ge
Wt
Wt
Wf
2-40 MICAP3 (Microstrip Interdigital Capacitor (1-port))
Microstrip Components
0.025 H G 0.45 H
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model
developed for Agilent by William J. Get singer. Refer ences [7], [8], and [9] ar e
supplement al.
The digit s of t he st r uct ur e ar e assumed t o be par t of an innit e ar r ay excit ed on
an even- and odd-mode basis. Each component in t his ar r ay is a unit cell
bounded by magnet ic walls. The model calculat es t he per-unit -lengt h
admit t ance and impedance mat r ices (even and odd modes) for each cell. This
calculat ion is based on t he even and odd mode capacit ances, t he conduct or loss
and t he subst r at e dielect r ic loss. The capacit ances ar e calculat ed by a confor mal
mapping t echnique. Conduct or losses ar e calculat ed using Wheeler 's met hod.
Cor r ect ions for nit e st r ip t hickness and end effect s ar e included. Net wor k
par amet er s of t he t r ansmission line model of each cell ar e calculat ed fr om t he
admit t ance and impedance mat r ices. The cells ar e combined t o fr om t he
complet e model including end effect s. Micr ost r ip disper sion effect s ar e included
in t his model.
2. This is a 1-por t congur at ion of MICAP1 for use wher e one side of t he
int er digit al capacit or is connect ed t o gr ound.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Pr oper gr ounding must be added manually in t he layout . The implied gr ound
plane is dr awn on t he layer mapped t o t he Hole par amet er in t he MSUB
component . The gr ound plane is for modeling in Moment um and is not modeled
separ at ely in t he cir cuit simulat or.
2.4
H m m ( )
---------------------
MICAP3 (Microstrip Interdigital Capacitor (1-port)) 2-41
6. G. Alley, Int er digit al Capacit or s and Their Applicat ion t o Lumped-Element
Micr owave Int egr at ed Cir cuit s, IEEE Trans. MTT-18, December 1970, pp.
1028-1033 (wit h addit ions by Agilent ).
7. R. Esfandiar i, D. Maku and M. Sir acusa. Design of Int er digit at ed Capacit or s
and Their Applicat ion t o Gallium-Ar senide Monolit hic Filt er s, IEEE Trans.
MTT, Vol. 31, No. 1, pp. 57-64, J anuar y 1983.
8. X. Y. She and Y. L. Chow. Int er digit al micr ost r ip capacit or as a four-por t
net wor k, IEEE Proceedings, Pt . H, Vol. 133, 1986, pp. 191-197.
2-42 MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
Microstrip Components
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = nger widt h, in specied unit s
G = gap bet ween nger s, in specied unit s
Ge = gap at end of nger s, in specied unit s
L = lengt h of over lapped r egion, in specied unit s
Np = number of nger pair s (an int eger )
Wt = widt h of int er connect , in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Er 12.5
T 0.015 H
Wt
Wt
Ge
MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port)) 2-43
0.05 H W 0.8 H
0.025 H G 0.45 H
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
T = conduct or t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model
developed for Agilent by William J. Get singer. Refer ences [7], [8], and [9] ar e
supplement al.
The digit s of t he st r uct ur e ar e assumed t o be par t of an innit e ar r ay excit ed on
an even- and odd-mode basis. Each component in t his ar r ay is a unit cell
bounded by magnet ic walls. The model calculat es t he per-unit -lengt h
admit t ance and impedance mat r ices (even and odd modes) for each cell. This
calculat ion is based on t he even and odd mode capacit ances, t he conduct or loss
and t he subst r at e dielect r ic loss. The capacit ances ar e calculat ed by a confor mal
mapping t echnique. Conduct or losses ar e calculat ed using Wheeler 's met hod.
Cor r ect ions for nit e st r ip t hickness and end effect s ar e included. Net wor k
par amet er s of t he t r ansmission line model of each cell ar e calculat ed fr om t he
admit t ance and impedance mat r ices. The cells ar e combined t o fr om t he
complet e model including end effect s. Micr ost r ip disper sion effect s ar e included
in t his model.
2. This is a 2-por t congur at ion of MICAP2 int ended for use wher e one side of t he
int er digit al capacit or is connect ed t o gr ound and t he ot her side does not have a
simple single connect ion point .
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Pr oper gr ounding must be added manually in t he layout . The implied gr ound
plane is dr awn on t he layer mapped t o t he Hole par amet er in t he MSUB
2.4
H m m ( )
---------------------
2-44 MICAP4 (Microstrip Interdigital Capacitor (Grounded 2-port))
Microstrip Components
component . The gr ound plane is for modeling in Moment um and is not modeled
separ at ely in t he cir cuit simulat or.
6. G. Alley, Int er digit al Capacit or s and Their Applicat ion t o Lumped-Element
Micr owave Int egr at ed Cir cuit s, IEEE Trans. MTT-18, December 1970, pp.
1028-1033 (wit h addit ions by Agilent ).
7. R. Esfandiar i, D. Maku, and M. Sir acusa. Design of Int er digit at ed Capacit or s
and Their Applicat ion t o Gallium-Ar senide Monolit hic Filt er s, IEEE Trans.
MTT, Vol. 31, No. 1, pp. 57-64, J anuar y 1983.
8. X. Y. She and Y. L. Chow. Int er digit al micr ost r ip capacit or as a four-por t
net wor k, IEEE Proceedings, Pt . H, Vol. 133, 1986, pp. 191-197.
MLANG (Microstrip Lange Coupler) 2-45
MLANG (Microstrip Lange Coupler)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = nger widt h, in specied unit s
S = conduct or spacing, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout Opt ion) widt h of t r ansmission lines t hat connect t o pins 1, 2, 3, 4
Range of Usage
1 Er 18
0.01
W
H
----- 10
2-46 MLANG (Microstrip Lange Coupler)
Microstrip Components
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
(3W + 2S) W1 0 for pr oper layout
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
Even- and odd-mode capacit ances ar e calculat ed for each unit -cell of t he
int er digit at ed st r uct ur e. Alt er nat e nger s ar e assumed t o be at t he same
pot ent ial. Only coupling bet ween adjacent nger s is included in t he model. The
per-unit -lengt h coupling capacit ances ar e calculat ed using t he for mula
developed by Kir schning and J ansen for par allel coupled micr ost r ip lines, and
t he for mula developed by Hammer st ad and J ensen for single micr ost r ip line.
Disper sion and conduct or loss ar e included. The even- and odd-mode line
impedances ar e calculat ed based on t he coupling capacit ances and conduct or
losses. Then, t his r esult is used t o calculat e t he net wor k par amet er s of t he
dist r ibut ed, coupled-line model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. The conduct or dr awn on t he layer mapped t o t he Cond2 par amet er, as well as
t he t r ansit ion dr awn on t he layer t o t he Diel2 par amet er, in t he MSUB
component ar e for t he pur pose of modeling in Moment um. They ar e not
modeled separ at ely in t he cir cuit simulat or.
5. W. H. Childs, A 3-dB Int er digit at ed Coupler on Fused Silica, IEEE MTT
S ymposium Digest, 1977.
6. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
7. M. Kir schning and R. H. J ansen, Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ics of Par allel Coupled Micr ost r ip
0.01
S
H
----- 10
25
H m m ( )
---------------------
MLANG (Microstrip Lange Coupler) 2-47
Lines, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-32, J anuar y
1984, pp. 83-89.
2-48 MLANG6 (Microstrip Lange Coupler (6-Fingered))
Microstrip Components
MLANG6 (Microstrip Lange Coupler (6-Fingered))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout Opt ion) widt h of t r ansmission lines t hat connect t o pins 1, 2, 3, 4
Range of Usage
1 Er 18
0.01
W
H
----- 10 < <
MLANG6 (Microstrip Lange Coupler (6-Fingered)) 2-49
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
(3W + 2S) W1 0 for pr oper layout
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
Even- and odd-mode capacit ances ar e calculat ed for each unit -cell of t he
int er digit at ed st r uct ur e. Alt er nat e nger s ar e assumed t o be at t he same
pot ent ial. Only coupling bet ween adjacent nger s is included in t he model. The
per-unit -lengt h coupling capacit ances ar e calculat ed using t he for mula
developed by Kir schning and J ansen for par allel coupled micr ost r ip lines, and
t he for mula developed by Hammer st ad and J ensen for single micr ost r ip line.
Disper sion and conduct or loss ar e included. The even- and odd-mode line
impedances ar e calculat ed based on t he coupling capacit ances and conduct or
losses. Then, t his r esult is used t o calculat e t he net wor k par amet er s of t he
dist r ibut ed, coupled-line model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. W1 is a layout -only par amet er and does not affect t he simulat ion r esult s.
5. The conduct or dr awn on t he layer mapped t o t he Cond2 par amet er, as well as
t he t r ansit ion dr awn on t he layer t o t he Diel2 par amet er, in t he MSUB
component ar e for t he pur pose of modeling in Moment um. They ar e not
modeled separ at ely in t he cir cuit simulat or.
6. W. H. Childs, A 3-dB Int er digit at ed Coupler on Fused Silica, IEEE MTT
S ymposium Digest, 1977.
7. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
0.01
S
H
----- 10 < <
25
H m m ( )
---------------------
2-50 MLANG6 (Microstrip Lange Coupler (6-Fingered))
Microstrip Components
8. M. Kir schning and R. H. J ansen, Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ics of Par allel Coupled Micr ost r ip
Lines, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-32, J anuar y
1984, pp. 83-89.
MLANG8 (Microstrip Lange Coupler (8-Fingered)) 2-51
MLANG8 (Microstrip Lange Coupler (8-Fingered))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout Opt ion) widt h of t r ansmission lines t hat connect t o pins 1, 2, 3, 4
Range of Usage
1 Er 18
2-52 MLANG8 (Microstrip Lange Coupler (8-Fingered))
Microstrip Components
0.01 10
0.01 10
Simulat ion fr equency (GHz)
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
(5W + 4S) W1 0 for pr oper layout
Notes/Equations/References
1. The fr equency-domain analyt ical model is a dist r ibut ed, coupled-line model.
Even- and odd-mode capacit ances ar e calculat ed for each unit -cell of t he
int er digit at ed st r uct ur e. Alt er nat e nger s ar e assumed t o be at t he same
pot ent ial. Only coupling bet ween adjacent nger s is included in t he model. The
per-unit -lengt h coupling capacit ances ar e calculat ed using t he for mula
developed by Kir schning and J ansen for par allel coupled micr ost r ip lines, and
t he for mula developed by Hammer st ad and J ensen for single micr ost r ip line.
Disper sion and conduct or loss ar e included. The even- and odd-mode line
impedances ar e calculat ed based on t he coupling capacit ances and conduct or
losses. This r esult is used t o calculat e t he net wor k par amet er s of t he
dist r ibut ed, coupled-line model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. W1 is a layout -only par amet er and does not affect t he simulat ion r esult s.
5. The conduct or dr awn on t he layer mapped t o t he Cond2 par amet er, as well as
t he t r ansit ion dr awn on t he layer t o t he Diel2 par amet er, in t he MSUB
component ar e for t he pur pose of modeling in Moment um. They ar e not
modeled separ at ely in t he cir cuit simulat or.
6. W. H. Childs, A 3-dB Int er digit at ed Coupler on Fused Silica, IEEE MTT
S ymposium Digest, 1977.
W
H
-----
S
H
-----
25
H m m ( )
---------------------
MLANG8 (Microstrip Lange Coupler (8-Fingered)) 2-53
7. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
8. M. Kir schning and R. H. J ansen, Accur at e Wide-Range Design Equat ions for
t he Fr equency-Dependent Char act er ist ics of Par allel Coupled Micr ost r ip
Lines, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-32, J anuar y
1984, pp. 83-89.
2-54 MLEF (Microstrip Line Open-End Effect)
Microstrip Components
MLEF (Microstrip Line Open-End Effect)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Wall1 = dist ance fr om near edge of st r ip H t o r st sidewall
Wall2 = dist ance fr om near edge of st r ip H t o second sidewall
Temp = physical t emper at ur e, in C
Range of Usage
2 Er 50
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
W
H
----- 0.2
MLEF (Microstrip Line Open-End Effect) 2-55
Notes/Equations/References
1. The open-end effect in micr ost r ip is modeled in t he fr equency domain as an
ext ension t o t he lengt h of t he micr ost r ip st ub. The micr ost r ip is modeled using
t he MLIN component , including conduct or loss, dielect r ic loss and disper sion. A
cor r ect ion for nit e line t hickness is applied t o t he line widt h. The lengt h of t he
micr ost r ip ext ension, dl, is based on t he for mula developed by Kir schning,
J ansen and Kost er. Fr inging at t he open end of t he line is calculat ed and
included in t he model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. When t he Hu par amet er of t he subst r at e is less t han
100*Thickness_of_subst r at e, t he impedance calculat ion will not be pr oper ly
done if WALL1 and WALL2 ar e left blank.
5. M. Kir schning, R. H. J ansen, and N. H. L. Kost er. Accur at e Model for
Open-End Effect of Micr ost r ip Lines, Electronics Letters, Vol. 17, No. 3,
Febr uar y 5, 1981, pp. 123-125.
Equivalent Circuit
l dl
Z
0
Z
0
2-56 MLIN (Microstrip Line)
Microstrip Components
MLIN (Microstrip Line)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Wall1 = dist ance fr om near edge of st r ip H t o r st sidewall
Wall2 = dist ance fr om near edge of st r ip H t o second sidewall
Temp = physical t emper at ur e, in C
Range of Usage
1 ER 128
wher e
ER = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model uses t he Hammer st ad and J ensen
for mula t o calculat e t he st at ic impedance, Z
o
, and effect ive dielect r ic const ant ,

eff.
. The at t enuat ion fact or,
c
, for mula is based on t he incr ement al induct ance
r ule pr oposed by Wheeler. Disper sion effect s ar e include by using eit her t he
0.01
W
H
----- 100
MLIN (Microstrip Line) 2-57
Get singer or Kir schning and J ansen disper sion for mula depending on t he
pr ogr am congur at ion. The pr ogr am default s t o using t he Kir schning and
J ansen for mula. The fr equency dependence of t he skin effect is included in t he
conduct or loss calculat ions. The for mulas pr ovide a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. When t he Hu par amet er of t he subst r at e is less t han
100*Thickness_of_subst r at e, t he impedance calculat ion will not be pr oper ly
done if WALL1 and WALL2 ar e left blank.
5. W. J. Get singer, Measur ement and Modeling of t he Appar ent Char act er ist ic
Impedance of Micr ost r ip, MTT-31, August 1983.
6. E. Hammer st ad and F. Bekkadal. Microstrip Handbook, ELAB Repor t STF44
A74169, Febr uar y 1975.
7. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980.
8. M. Kir schning and R. H. J ansen. Electronics Letters, J anuar y 18, 1982.
9. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
2-58 MLOC (Microstrip Open-Circuited Stub)
Microstrip Components
MLOC (Microstrip Open-Circuited Stub)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Wall1 = dist ance fr om near edge of st r ip H t o r st sidewall
Wall2 = dist ance fr om near edge of st r ip H t o second sidewall
Temp = physical t emper at ur e, in C
Range of Usage
Er 128
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model uses t he Hammer st ad and J ensen
for mula t o calculat e t he st at ic impedance, Z
o
, and effect ive dielect r ic const ant ,

eff
. The at t enuat ion fact or,
c
, for mula is based on t he incr ement al induct ance
r ule pr oposed by Wheeler. Disper sion effect s ar e include by using eit her t he
Get singer or Kir schning and J ansen disper sion for mula depending on t he
pr ogr am congur at ion. The pr ogr am default s t o using t he Kir schning and
0.01
W
H
----- 100
MLOC (Microstrip Open-Circuited Stub) 2-59
J ansen for mula. The fr equency dependence of t he skin effect is include in t he
conduct or loss calculat ions. The for mulas pr ovide a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
2. No end effect s ar e included in t he model.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. When t he Hu par amet er of t he subst r at e is less t han
100*Thickness_of_subst r at e, t he impedance calculat ion will not be pr oper ly
done if WALL1 and WALL2 ar e left blank.
6. W. J. Get singer, Measur ement and Modeling of t he Appar ent Char act er ist ic
Impedance of Micr ost r ip, MTT-31, August 1983.
7. E. Hammer st ad and F. Bekkadal. Microstrip Handbook, ELAB Repor t STF44
A74169, Febr uar y 1975.
8. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest , 1980.
9. M. Kir schning and R. H. J ansen. Electronics Letters, J anuar y 18, 1982.
10. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
2-60 MLSC (Microstrip Short-Circuited Stub)
Microstrip Components
MLSC (Microstrip Short-Circuited Stub)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Wall1 = dist ance fr om near edge of st r ip H t o r st sidewall
Wall2 = dist ance fr om near edge of st r ip H t o second sidewall
Temp = physical t emper at ur e, in C
Range of Usage
Er 128
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model uses t he Hammer st ad and J ensen
for mula t o calculat e t he st at ic impedance, Z
o
, and effect ive dielect r ic const ant ,

eff
. The at t enuat ion fact or,
c
, for mula is based on t he incr ement al induct ance
r ule pr oposed by Wheeler. Disper sion effect s ar e include by using eit her t he
Get singer or Kir schning and J ansen disper sion for mula depending on t he
0.01
W
H
----- 100
MLSC (Microstrip Short-Circuited Stub) 2-61
pr ogr am congur at ion. The pr ogr am default s t o using t he Kir schning and
J ansen for mula. The fr equency dependence of t he skin effect is included in t he
conduct or loss calculat ions. The for mulas pr ovide a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
2. No end effect s ar e included in t he model.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Pr oper gr ounding must be added manually in t he layout .
6. The implied gr ound is dr awn on t he layer mapped t o t he Hole par amet er in t he
MSUB component . The gr ound is for t he pur pose of modeling in Moment um
and is not modeled separ at ely in t he cir cuit simulat or.
7. Wall1 and Wall2 ar e opt ional; if t hey ar e not specied, t he component is
simulat ed as if no walls exist .
8. W. J. Get singer, Measur ement and Modeling of t he Appar ent Char act er ist ic
Impedance of Micr ost r ip, MTT-31, August 1983.
9. E. Hammer st ad and F. Bekkadal. Microstrip Handbook, ELAB Repor t STF44
A74169, Febr uar y 1975.
10. E. Hammer st ad and O. J ensen. Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980.
11. M. Kir schning and R. H. J ansen. Electronics Letters, J anuar y 18, 1982.
12. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
2-62 MRIND (Microstrip Rectangular Inductor)
Microstrip Components
MRIND (Microstrip Rectangular Inductor)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
N = number of t ur ns (need not be an int eger )
L1 = lengt h of second out er most segment (see illust r at ion), in specied unit s
L2 = lengt h of out er most segment (see illust r at ion), in specied unit s
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout opt ion) widt h of line t hat connect s t o pin 1
W2 = (for Layout opt ion) widt h of line t hat connect s t o pin 2
Range of Usage
W > 0; S > 0; T > 0
N 8 (or t he highest number of t ur ns t hat will t , given W, S, L1 and L2)
W + S 0.01 H
MRIND (Microstrip Rectangular Inductor) 2-63
T 0.85 W and T 0.85 S
wher e
T = conduct or t hickness (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The number of t ur ns (N) is adjust ed t o t he near est quar t er t ur n. This
component does not include a connect ion (such as an air-br idge) fr om t he cent er
of t he induct or t o t he out side.
2. The fr equency-domain analyt ical model for t his component has been developed
for Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model. Each
segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive component s account for capacit ance t o
gr ound, coupling t o t he par allel adjacent segment s, and t he coupling t o t he next
par allel segment s beyond t he adjacent , on bot h sides. The model also account s
for conduct or and dielect r ic loss.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. In layout , t he number of t ur ns is r ounded t o t he near est quar t er-t ur n. The
connect ion will align at t he inside edge at pin 1 and t he out side edge at pin 2,
unless W1 < W or W2 > W, in which case t he conduct or s ar e cent er ed.
6. C. Hoer and C. Love, Exact induct ance equat ions for r ect angular conduct or s
wit h applicat ions t o mor e complicat ed geomet r ics, Journal of Research of NBS,
Vol. 69C, No. 2, Apr il-J une 1965, pp. 127-137.
7. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951, sect ions
5.11 and 5.28.
8. V. Ghoshal and L. Smit h, Skin effect s in nar r ow copper micr ost r ip at 77K,
IEEE Trans. on Microwave Theory and Tech., Vol. 36, December 1988.
2-64 MRIND (Microstrip Rectangular Inductor)
Microstrip Components
9. H. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept . 1941, pp.
412-424.
10. K. Gupt a, R. Gar g and I. Bahl, Microstrip lines and slotlines, Ar t ech House,
Dedham, MA, sect ion 2.4.5.
MRINDELA (Elevated Microstrip Rectangular Inductor) 2-65
MRINDELA (Elevated Microstrip Rectangular Inductor)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Ns = number of segment s
L1 = lengt h of r st segment , in specied unit s
L2 = lengt h of second segment , in specied unit s
L3 = lengt h of t hir d segment , in specied unit s
Ln = lengt h of last segment , in specied unit s
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
Hi = elevat ion of induct or above subst r at e, in specied unit s
Ti = t hickness of conduct or s, in specied unit s
W/2
L2
L1
Ln
Wu
L3
S
W
UE
AU
2-66 MRINDELA (Elevated Microstrip Rectangular Inductor)
Microstrip Components
Ri = r esist ivit y (r elat ive t o gold) of conduct or s
Sx = spacing limit bet ween suppor t post s, in specied unit s (0 t o ignor e post s)
Cc = coefcient for capacit ance of cor ner suppor t post s (r at io of act ual post
cr oss-sect ional ar ea t o W
2
)
Cs = coefcient for capacit ance of suppor t post s along segment (r at io of act ual post
cr oss-sect ional ar ea t o W
2
)
Wu = widt h of under pass st r ip conduct or, in specied unit s
Au = angle of depar t ur e fr om inner most segment , in degr ees
UE = ext ension of under pass beyond induct or, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
S > 0
Sx > 2W
Au = 0, 45, or 90
Au must be 90 if last segment (Ln) is less t han full lengt h
wher e Lnmax is t he full length of t he last segment (see Not e
4)
Hi > MSUB met al t hickness T
Ti W
Notes/Equations/References
1. The induct or is elevat ed in air above t he subst r at e wit h a br idge connect ion
t hat is in t he for m of an under pass st r ip conduct or. Effect s of suppor t post s ar e
included. Suppor t post s ar e assumed t o exist at each cor ner, plus along t he
segment s, depending on t he value of Sx.
2. The fr equency-domain analyt ical model for t his component has been developed
for Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model.
W S +
2
---------------- L n L n m ax
MRINDELA (Elevated Microstrip Rectangular Inductor) 2-67
Each segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive component s account for capacit ance t o
gr ound, coupling t o t he par allel adjacent segment s, and t he coupling t o t he next
par allel segment s beyond t he adjacent , on bot h sides. The model also account s
for conduct or and dielect r ic loss.
3. The under pass conduct or (br idge) connect s t o t he inner most segment and
cr osses t he induct or fr om under neat h t he spir al. The br idge is capacat ively
coupled t o each segment of t he spir al t hat it cr osses.
4. If Ln is set t o 0, it is assumed t o have full length. The full length (Lnmax) is
such t hat t he spacing fr om t he cont act r efer ence point t o t he inner edge of t he
four t h-fr om-last segment is S+W/2.
If Ns is even: Lnmax = L2 (Ns 2) (W + S)/2
If Ns is odd: Lnmax = L3 (Ns 3) (W + S)/2
5. If Wu=0, t he effect of t he under pass st r ip conduct or is not simulat ed.
6. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
7. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
8. In layout , t he segment s of t he spir al ar e dr awn on t he cond2 layer and t he
suppor t post s ar e dr awn on t he cond layer.
For layout pur poses t he last segment (Ln) is dr awn such t hat it ext ends a
dist ance of W/2 beyond t he cont act r efer ence point . This allows for a squar e
r egion of size WW, on which t he cont act t o t he under pass is cent er ed.
The induct or segment s t o air br idge/under pass t r ansit ion is dr awn on t he layer
mapped t o t he Diel2 par amet er of t he MSUB component . The t r ansit ion is only
for t he pur pose of modeling in Moment um and is not t aken int o account in t he
cir cuit simulat or.
For t he t r ansit ion at pin 2, if t he angle of t he air br idge/under pass is 0 or 45, t he
widt h of t he t r ansit ion is t he widt h of t he air br idge/under pass; if t he angle of
t he air br idge/under pass is 90, t he widt h of t he t r ansit ion is t he widt h of t he
induct or segment .
2-68 MRINDELA (Elevated Microstrip Rectangular Inductor)
Microstrip Components
9. C. Hoer and C. Love, Exact induct ance equat ions for r ect angular conduct or s
wit h applicat ions t o mor e complicat ed geomet r ics, Journal of Research of NBS,
Vol. 69C, No. 2, Apr il-J une 1965, pp. 127-137.
10. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951, sect ions
5.11 and 5.28.
11. V. Ghoshal and L. Smit h, Skin effect s in nar r ow copper micr ost r ip at 77K,
IEEE Trans. on Microwave Theory and Tech., Vol. 36, December 1988.
12. H. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept . 1941, pp.
412-424.
13. K. Gupt a, R. Gar g and I. Bahl, Microstrip lines and slotlines, Ar t ech House,
Dedham, MA, sect ion 2.4.5.
MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer Substrate)) 2-69
MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer
Substrate))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Ns = number of segment s
L1 = lengt h of r st segment , in lengt h unit s
L2 = lengt h of second segment , in lengt h unit s
L3 = lengt h of t hir d segment , in lengt h unit s
Ln = lengt h of last segment , in specied unit s
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
W/2
L2
L1
LN
WU
L3
S
W
UE
AU
2-70 MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer Substrate))
Microstrip Components
WU = widt h of under pass conduct or, in lengt h unit s
AU = angle of depar t ur e fr om inner most segment , in angle unit s
UE = ext ension of under pass beyond induct or, in lengt h unit s
Temp = physical t emper at ur e, in C
Range of Usage (including data item parameters):
W > 0
S > 0
AU = 0, 45, or 90
AU must be 90 if last segment (LN) is less t han full lengt h
wher e LNmax is t he full length of t he last segment (see Not e 5)
MSUBST3 subst r at e t hickness H (1) > met al t hickness T (1).
Notes/Equations/References
1. The induct or is elevat ed above a second subst r at e, as descr ibed by MSUBST3.
The br idge connect ion is in t he for m of an under pass st r ip conduct or t hat is
pr int ed on t he bot t om subst r at e (descr ibed by MSUBST3).
2. The fr equency-domain analyt ical model for t his element has been developed for
Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model.
3. Each segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive element s account for capacit ance t o gr ound,
coupling t o t he par allel adjacent segment s, and t he coupling t o t he next par allel
segment s beyond t he adjacent , on bot h sides. The model also account s for
conduct or and dielect r ic loss.
4. The under pass conduct or (br idge) connect s t o t he inner most segment and
cr osses t he induct or fr om under neat h t he spir al. The br idge is capacat ively
coupled t o each segment of t he spir al t hat it cr osses.
W S +
2
--------------- L N L N m ax
MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer Substrate)) 2-71
5. If LN is set t o zer o, it is assumed t o have full length. The full length (LNmax) is
such t hat t he spacing fr om t he cont act r efer ence point t o t he inner edge of t he
four t h-fr om-last segment is S+W/2.
If NS is even: LNmax = L2 (NS 2) (W + S)/2
If NS is odd: LNmax = L3 (NS 3) (W + S)/2
6. If WU=0, t he effect of t he under pass st r ip conduct or is not simulat ed.
7. For t r ansient analysis, micr ost r ip induct or s ar e modeled using a lumped RLC
cir cuit .
8. For convolut ion analysis, t he fr equency-domain analyt ical model is used.
9. In Layout , t he spir al induct or is mapped t o t he layer assigned t o t he
Layer Name[1] par amet er of t he MSUBST3 component r efer enced by t he
MRINDELM component . The under pass is mapped t o t he layer assigned t o t he
Layer Name[2] par amet er of t he MBSUBST3 component r efer enced by t he
MRINDELM component .
For layout pur poses t he last segment (LN) is dr awn such t hat it ext ends a
dist ance of W/2 beyond t he cont act r efer ence point . This allows for a squar e
r egion of size WW, on which t he cont act t o t he under pass is cent er ed.
The induct or segment s t o air-br idge/under pass t r ansit ion is mapped t o t he
layer assigned t o t he Layer ViaName[1] par amet er of t he MSUBST3 component
r efer enced in t he MRINDELM component . The t r ansit ion is only for t he
pur pose of modeling in Moment um and is not t aken int o account in t he cir cuit
simulat or.
For t he t r ansit ion at pin 2, if t he angle of t he air-br idge/under pass is 0 or 45, t he
widt h of t he t r ansit ion is t he widt h of t he air-br idge/under pass; if t he angle of
t he air-br idge/under pass is 90, t he widt h of t he t r ansit ion is t he widt h of t he
induct or segment .
10. C. Hoer and C. Love, Exact induct ance equat ions for r ect angular conduct or s
wit h applicat ions t o mor e complicat ed geomet r ics, Journal of Research of NBS,
Vol. 69C, No. 2, Apr il-J une 1965, pp. 127-137.
11. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951, sect ions
5.11 and 5.28.
12. V. Ghoshal and L. Smit h, Skin effect s in nar r ow copper micr ost r ip at 77K,
IEEE Trans. on Microwave Theory and Tech., Vol. 36, December 1988.
2-72 MRINDELM (Elevated Microstrip Rectangular Inductor (Three-Layer Substrate))
Microstrip Components
13. H. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept . 1941, pp.
412-424.
14. K. Gupt a, R. Gar g and I. Bahl, Microstrip lines and slotlines, Ar t ech House,
Dedham, MA, sect ion 2.4.5.
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) 2-73
MRINDNBR (Microstrip Rectangular Inductor (No Bridge))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Ns = number of segment s
L1 = lengt h of r st segment , in specied unit s
L2 = lengt h of second segment , in specied unit s
L3 = lengt h of t hir d segment , in specied unit s
Ln = lengt h of last segment , in specied unit s
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
Temp = physical t emper at ur e, in C
W/2
Ln
L2
L1
L3
S
W
2-74 MRINDNBR (Microstrip Rectangular Inductor (No Bridge))
Microstrip Components
Range of UsagRange of Usage
W > 0
S > 0
wher e Lnmax is t he full length of t he last segment (see Not e 3)
Notes/Equations/References
1. This component model is t he same as t hat for MRIND. As wit h MRIND, t his
component does not include a connect ion (such as an air br idge) fr om t he ent er
of t he induct or t o t he out side.
2. The fr equency-domain analyt ical model for t his component has been developed
for Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model.
Each segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive component s account for capacit ance t o
gr ound, coupling t o t he par allel adjacent segment s, and t he coupling t o t he next
par allel segment s beyond t he adjacent , on bot h sides. The model also account s
for conduct or and dielect r ic loss.
3. If Ln is set t o zer o, it is assumed t o have full length. The full length (Lnmax) is
such t hat t he spacing fr om t he cont act r efer ence point t o t he inner edge of t he
four t h-fr om-last segment is S+W/2.
If Ns is even: Lnmax = L2 (Ns 2) (W + S)/2
If Ns is odd: Lnmax = L3 (Ns 3) (W + S)/2
4. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
5. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
6. For layout pur poses, t he last segment (Ln) is dr awn such t hat it ext ends a
dist ance of W/2 beyond t he cont act r efer ence point . This allows for a squar e
r egion of size WW, on which t he cont act t o t he inner pin is cent er ed.
W S +
2
---------------- L n L n m ax
MRINDNBR (Microstrip Rectangular Inductor (No Bridge)) 2-75
7. C. Hoer and C. Love, Exact induct ance equat ions for r ect angular conduct or s
wit h applicat ions t o mor e complicat ed geomet r ics, Journal of Research of NBS,
Vol. 69C, No. 2, Apr il-J une 1965, pp. 127-137.
8. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951, sect ions
5.11 and 5.28.
2-76 MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, Three-Layer Substrate))
Microstrip Components
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, Three-Layer
Substrate))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Ns = number of segment s
L1 = lengt h of r st segment , in lengt h unit s
L2 = lengt h of second segment , in lengt h unit s
L3 = lengt h of t hir d segment , in lengt h unit s
Ln = lengt h of last segment , in lengt h unit s
W = conduct or widt h, in lengt h unit s
S = conduct or spacing, in lengt h unit s
W/2
L2
L1
LN
WB
L3
S
W
BE
AB
MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, Three-Layer Substrate)) 2-77
WB = widt h of br idge st r ip conduct or, in lengt h unit s
AB = angle of depar t ur e fr om inner most segment , in angle unit s
BE = ext ension of br idge beyond induct or, in lengt h unit s
Temp = physical t emper at ur e, in C
Range of Usage (including data item parameters):
W > 0
S > 0
AB = 0, 45, or 90
AB must be 90 if last segment is less t han full lengt h
wher e
LNmax is t he full length of t he last segment (see Not e 5)
Notes/Equations/References
1. The induct or is modeled as pr int ed on t he subst r at e descr ibed by MSUBST3.
The br idge st r ip is modeled as pr int ed on a dielect r ic t hat is descr ibed by
MSUBST3.
2. The fr equency-domain analyt ical model for t his element has been developed for
Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model.
3. Each segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive element s account for capacit ance t o gr ound,
coupling t o t he par allel adjacent segment s, and t he coupling t o t he next par allel
segment s beyond t he adjacent , on bot h sides. The model also account s for
conduct or and dielect r ic loss.
4. The br idge conduct or connect s t o t he inner most segment and cr osses t he spir al
fr om t he t op. The br idge is capacit ively coupled t o each segment of t he spir al
t hat it cr osses.
W S +
2
--------------- L N L N m ax
2-78 MRINDSBR (Microstrip Rectangular Inductor (Strip Bridge, Three-Layer Substrate))
Microstrip Components
5. If LN is set t o zer o, it is assumed t o have full length. The full length (LNmax) is
such t hat t he spacing fr om t he cont act r efer ence point t o t he inner edge of t he
four t h-fr om-last segment is S+W/2.
If NS is even: LNmax = L2 (NS 2) (W + S)/2
If NS is odd: LNmax = L3 (NS 3) (W + S)/2
6. If WB=0, t he effect of t he br idge st r ip conduct or is not simulat ed.
7. For t r ansient analysis, micr ost r ip induct or s ar e modeled using a lumped RLC
cir cuit .
8. For convolut ion analysis, t he fr equency-domain analyt ical model is used.
9. In Layout , t he spir al induct or is mapped t o t he layer assigned t o t he
Layer Name[2] par amet er of t he MSUBST3 component r efer enced by t he
MRINDSBR component . The st r ip br idge is mapped t o t he layer assigned t o t he
Layer Name[1] par amet er of t he MBSUBST3 component r efer enced by t he
MRINDSBR component .
For layout pur poses, t he last segment (LN) is dr awn such t hat it ext ends a
dist ance of W/2 beyond t he cont act r efer ence point . This allows for a squar e
r egion of size WW, on which t he cont act t o t he br idge is connect ed.
The induct or segment s t o air-br idge/under pass t r ansit ion is mapped t o t he
layer assigned t o t he Layer ViaName[1] par amet er of t he MSUBST3 component .
r efer enced by t he MRINDSBR component . The t r ansit ion is only for t he
pur pose of modeling in Moment um and is not t aken int o account in t he cir cuit
simulat or.
For t he t r ansit ion at pin 2, if t he angle of t he air-br idge/under pass is 0 or 45, t he
widt h of t he t r ansit ion is t he widt h of t he air-br idge/under pass; if t he angle of
t he air-br idge/under pass is 90, t he widt h of t he t r ansit ion is t he widt h of t he
induct or segment .
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) 2-79
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge))
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Ns = number of segment s
L1 = lengt h of r st segment , in lengt h unit s
L2 = lengt h of second segment , in lengt h unit s
L3 = lengt h of t hir d segment , in lengt h unit s
Ln = lengt h of last segment , in lengt h unit s
W = conduct or widt h, in lengt h unit s
S = conduct or spacing, in lengt h unit s
WB = widt h of br idge st r ip conduct or, in lengt h unit s
W/2
L2
L1
Ln
Dw
L3
S
W
WE
Aw
2-80 MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge))
Microstrip Components
AB = angle of depar t ur e fr om inner most segment , in angle unit s
BE = ext ension of br idge beyond induct or, in lengt h unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
S > 0
Aw = 0, 45, or 90
Aw must be 90 if last segment is less t han full lengt h
wher e Lnmax is t he full length of t he last segment (see Not e 3)
Notes/Equations/References
1. This induct or is modeled as pr int ed on t he subst r at e descr ibed by Subst . The
air br idge is in t he for m of a r ound wir e t hat connect s fr om t he cent er of t he
spir al t o t he out side.
2. The fr equency-domain analyt ical model for t his component has been developed
for Agilent by William J. Get singer. Result s published in t he r efer ences list ed at
t he end of t hese not es wer e used in t he development of t his model.
Each segment of t he spir al is modeled as a lumped C-L-C -sect ion wit h mut ual
induct ive coupling t o all ot her par allel segment s including t hose of an image
spir al. The image spir al account s for t he effect s of t he micr ost r ip gr ound plane.
The induct ive calculat ions include t he end-effect s and differ ing lengt hs of
coupled segment s. The capacit ive component s account for capacit ance t o
gr ound, coupling t o t he par allel adjacent segment s, and t he coupling t o t he next
par allel segment s beyond t he adjacent , on bot h sides. The model also account s
for conduct or and dielect r ic loss.
3. If Ln is set t o zer o, it is assumed t o have full length. The full length (LNmax) is
such t hat t he spacing fr om t he cont act r efer ence point t o t he inner edge of t he
four t h-fr om-last segment is S+W/2.
If Ns is even: Lnmax = L2 (Ns 2) (W + S)/2
If Ns is odd: Lnmax = L3 (Ns 3) (W + S)/2
4. If Dw=0, t he effect of t he wir e br idge is not simulat ed.
W S +
2
---------------- L n L n m ax
MRINDWBR (Microstrip Rectangular Inductor (Wire Bridge)) 2-81
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
6. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
7. In layout , t he segment s of t he spir al ar e dr awn on cond layer. The wir e br idge is
dr awn on t he bond layer.
For layout pur poses t he last segment (Ln) is dr awn such t hat it ext ends a
dist ance of W/2 beyond t he cont act r efer ence point . This allows for a squar e
r egion of size WW, on which t he cont act t o t he wir e br idge is cent er ed.
The induct or segment s t o air br idge/under pass t r ansit ion is dr awn on t he layer
mapped t o t he Diel2 par amet er of t he MSUB component . The t r ansit ion is only
for t he pur pose of modeling in Moment um and is not t aken int o account in t he
cir cuit simulat or.
For t he t r ansit ion at pin 2, if t he angle of t he air-br idge/under pass is 0 or 45, t he
widt h of t he t r ansit ion is t he widt h of t he air-br idge/under pass; if t he angle of
t he air-br idge/under pass is 90, t he widt h of t he t r ansit ion is t he widt h of t he
induct or segment .
8. C. Hoer and C. Love, Exact induct ance equat ions for r ect angular conduct or s
wit h applicat ions t o mor e complicat ed geomet r ics, Journal of Research of NBS,
Vol. 69C, No. 2, Apr il-J une 1965, pp. 127-137.
9. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, New Yor k, 1951, sect ions
5.11 and 5.28.
10. V. Ghoshal and L. Smit h, Skin effect s in nar r ow copper micr ost r ip at 77K,
IEEE Trans. on Microwave Theory and Tech., Vol. 36, December 1988.
11. H. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept . 1941, pp.
412-424.
12. K. Gupt a, R. Gar g and I. Bahl, Microstrip lines and slotlines, Ar t ech House,
Dedham, MA, sect ion 2.4.5.
2-82 MRSTUB (Microstrip Radial Stub)
Microstrip Components
MRSTUB (Microstrip Radial Stub)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
Wi = widt h of input line, in specied unit s
L = lengt h of st ub, in specied unit s
Angle = angle subt ended by st ub, in degr ees
Temp = physical t emper at ur e, in C
Range of Usage
Er 128
10 Angle 170
(L + D) Angle (r adians) 100 H (see illust r at ion)
Angle
0.01
Wi
H
------- 100
MRSTUB (Microstrip Radial Stub) 2-83
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a micr ost r ip line macr o-model
developed by Agilent . The r adial st ub is const r uct ed fr om a ser ies of straight
micr ost r ip sect ions of var ious widt hs t hat ar e cascaded t oget her. The micr ost r ip
line model is t he MLIN model. The number of sect ions is fr equency dependent .
Disper sion effect s in t he micr ost r ip sect ions ar e included. The
fr equency-domain analyt ical model is lossless.
2. MRSTUB should be used wit h MTEE or MCROS when used as a st ub in shunt
wit h a t r ansmission line.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
2-84 MSIND (Microstrip Round Spiral Inductor)
Microstrip Components
MSIND (Microstrip Round Spiral Inductor)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
N = number of t ur ns
Ri = inner r adius measur ed t o t he cent er of t he conduct or, in specied unit s
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout opt ion) widt h of st r ip ending at pin 1
W2 = (for Layout opt ion) widt h of st r ip ending at pin 2
Range of Usage
Ri > W/2
N > 1
S
W
RI
C
MSIND (Microstrip Round Spiral Inductor) 2-85
Notes/Equations/References
1. The fr equency-domain analyt ical model is a low-pass, ser ies R-L and shunt C
st r uct ur e. Each R-L-C sect ion cor r esponds t o one t ur n of t he induct or. The
induct or L of each sect ion is calculat ed using t he for mulas of Remke and
Bur dick, which do include gr ound plane induct ance. For mulas given by
Pet t enpaul and his co-aut hor s ar e used t o calculat e t he ser ies r esist ance R.
These for mulas pr ovide a smoot h t r ansit ion fr om dc r esist ance t o r esist ance due
t o skin effect at high fr equencies. The value of t he shunt capacit ance C is based
on coupled t r ansmission line t heor y. Dielect r ic losses ar e not included.
2. Ri is measur ed t o t he cent er of t he conduct or.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Ewald Pet t enpaul, Har mut Kapust a, Addr eas Weisger ber, Heinr ich Mampe,
J ur gen Luginsland, and Ingo Wolff. CAD Models of Lumped Elements on GaAs
up to 18 GHZ, IEEE Tr ansact ions on Micr owave Theor y and Techniques, Vol.
36, No. 2, Febr uar y 1988, pp. 294-304.
6. Ronald L. Remke and Glenn A. Bur dick. S piral Inductors for Hybrid and
Microwave Applications, Pr oc. 24t h Elect r on Component s Confer ence,
Washingt on, D.C., May 1974, pp. 152-161.
2-86 MSLIT (Microstrip Slit)
Microstrip Components
MSLIT (Microstrip Slit)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = widt h, in specied unit s
D = dept h of slit , in specied unit s
L = lengt h of slit , in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
D (0.9 W) or (W 0.01 H) whichever is smaller
L H
wher e
= wavelengt h in t he dielect r ic
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model consist s of a st at ic, lumped, equivalent
cir cuit . The equivalent cir cuit par amet er s ar e calculat ed based on t he
L

10
------ <
0.01
W
H
----- 100
MSLIT (Microstrip Slit) 2-87
expr essions given by Hoefer. The r efer ence plane of t he lumped model is at t he
cent er of t he slit . Two r efer ence plane shift s ar e added t o move t he r efer ence
plane t o t he out side edge of t he slit , so t hat t hey ar e coincident wit h t he layout
dimensions. These r efer ence plane shift s ar e modeled using a MLIN micr ost r ip
model t hat includes loss and disper sion. The char act er ist ics of t he micr ost r ip
lines ar e calculat ed based on t he const r ict ed widt h of t he slit W-D. The for mulas
ar e given below, wher e Z
o
and
eff
ar e calculat ed for widt h W; Z
o
and
eff
ar e
calculat ed for widt h W-D; and, C
gap
is t he gap capacit ance associat ed wit h a gap
of lengt h L and widt h 2D (c
o
is t he velocit y of light in air ).
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. E. Hammer st ad, Comput er-Aided Design of Micr ost r ip Couples wit h Accur at e
Discont inuit y Models, IEEE MTT S ymposium Digest, J une 1981, pp. 54-56.
5. W. J. R. Hoefer, Fine Tuning of Micr owave Int egr at ed Cir cuit s Thr ough
Longit udinal and Tr ansver se Slit s of Var iable Lengt h, NTZ (Ger man), Vol.30,
May 1977, pp. 421-424.
6. W. J. R. Hoefer, Theor et ical and Exper iment al Char act er izat ion of Nar r ow
Tr ansver se Slit s in Micr ost r ip, NTZ (Ger man), Vol. 30, J uly 1977, pp. 582-585.
7. W. J. R. Hoefer, Equivalent Ser ies Induct ivit y of a Nar r ow Tr ansver se Slit in
Micr ost r ip, MTT Transactions, Vol. MTT- 25, Oct ober 1977, pp. 822-824.
L
H
--------

0
2
--------- 1
Z
o
Z
o

--------

ef f

ef f

-----------
,

_
=
C
s
C
gap
2
-------------- =
C
p

ef f
L
2c
0
Z
0

-------------------- =
2-88 MSLIT (Microstrip Slit)
Microstrip Components
Equivalent Circuit
Z
o
Z
o

C
s
C
p
C
p
L/2 L/2
L
MSOP (Microstrip Symmetric Pair of Open Stubs) 2-89
MSOP (Microstrip Symmetric Pair of Open Stubs)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = widt h of input line, in specied unit s
D1 = dist ance bet ween cent er lines of input line and st ub-pair, in specied unit s
W2 = widt h of out put line, in specied unit s
D2 = dist ance bet ween cent er lines of out put line and of st ub-pair, in specied unit s
Ws = widt h of st ubs, in specied unit s
Ls = combined lengt h of st ubs, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
C
t
Ls
Ws
0.01
W 1
H
--------- 100
2-90 MSOP (Microstrip Symmetric Pair of Open Stubs)
Microstrip Components
Ws > 0
Ls > 0
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model ignor es conduct or losses, dielect r ic
losses, and met al t hickness.
2. A posit ive (negat ive) D1 implies t hat t he input line is below (above) t he cent er
of t he st ub-pair.
A posit ive (negat ive) D2 implies t hat t he out put line is above (below) t he cent er
of t he st ub-pair.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. G. DInzeo, F. Giannini, C. Sodi, and R. Sor r ent ino. Met hod of Analysis and
Filt er ing Pr oper t ies of Micr owave Planar Net wor ks, IEEE Transactions on
Microwave Theory and Techniques, Vol. MTT-26, No. 7, J uly 1978, pp. 467-471.
0.01
W 2
H
--------- 100
MSTEP (Microstrip Step in Width) 2-91
MSTEP (Microstrip Step in Width)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
Notes/Equations/References
1. Alt hough t he r efer ences list ed her e have validat ed t he model for Er 10, it does
not mean t hat t he model is inaccur at e for Er > 10.
2. The fr equency-domain analyt ical model is der ived fr om a TEM (fundament al
mode) planar waveguide model of t he discont inuit y. In t he der ivat ion, t he
planar waveguide model is t r ansfor med int o a r ect angular waveguide model,
and t he expr ession for t he ser ies induct ance, L
s
, is for mulat ed based on an
analysis of t he cur r ent concent r at ion at t he discont inuit y. This for mula is
document ed in Handbook of Microwave Integrated Circuits by R. Hoffman. The
r efer ence plane shift , l, is calculat ed based on an analysis of t he scat t er ed
0.1
W 2
W 1
--------- 10
2-92 MSTEP (Microstrip Step in Width)
Microstrip Components
elect r ic elds at t he fr ont edge of t he wider conduct or. In addit ion, disper sion is
account ed for in t he model.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. In layout , MSTEP aligns t he cent er lines of t he st r ips.
5. Reinmut K. Hoffman, Handbook of Microwave Integrated Circuits, Ar t ech
House, 1987, pp. 267-309.
6. G. Kompa, Design of St epped Micr owave Component s, The Radio and
Electronic Engineer, Vol. 48, No. 1/2, J anuar y 1978, pp. 53-63.
7. Nor ber t H. L. Kost er and Rolf H. J ansen. The Micr ost r ip St ep Discont inuit y: A
Revised Descr ipt ion, IEEE Transactions on Microwave Theory and Techniques,
Vol. MTT 34, No. 2, Febr uar y 1986, pp. 213-223 (for compar ison only).
Equivalent Circuit
Z
1

eff1
(f)
l l
Z
2

eff2
(f)
L
S
MSUB (Microstrip Substrate) 2-93
MSUB (Microstrip Substrate)
Symbol
Illustration
Parameters
H = subst r at e t hickness, in specied unit s
Er = r elat ive dielect r ic const ant
Mur = r elat ive per meabilit y
Cond = conduct or conduct ivit y, in Siemen/met er
Hu = cover height
T = conduct or t hickness, in specied unit s
TanD = dielect r ic loss t angent
Rough = conduct or sur face r oughness, in specied unit s; RMS value
Cond1 = (for Layout opt ion) layer t o which cond is mapped; default = 1 (cond)
Cond2 = (for Layout opt ion) layer t o which cond2 is mapped; default = 2 (cond2)
Diel1 = (for Layout opt ion) layer t o which diel is mapped; default = 4 (diel)
Diel2 = (for Layout opt ion) layer t o which diel2 is mapped; default = 12 (diel2)
Hole = (for Layout opt ion) layer t o which hole is mapped; default = 5 (hole)
Res = (for Layout opt ion) layer t o which hole is mapped; default = 5 (hole)
Range of Usage
N/A
2-94 MSUB (Microstrip Substrate)
Microstrip Components
Notes/Equations/References
1. MSUB is r equir ed for all micr ost r ip component s.
2. Conduct or losses ar e account ed for when Cond < 4.110
17
S/m and T > 10
-9
.
Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7
.
3. The par amet er s Cond1, Cond2, Diel1, Diel2, Hole, and Res cont r ol t he layer on
which t he Mask layer s ar e dr awn. These ar e layout -only par amet er s and ar e
not used by t he simulat or. Cond1 is t he layer on which Met al 1 is dr awn; Cond2
is for air-br idges and under passes; Diel1 is for dielect r ic capacit ive ar eas; Diel2
is for Via bet ween cond and cond2 mask layer s; Hole is for Via layer s used for
gr ounding; and Res is for r esist ive mask layer s.
4. Micr ost r ip cover height effect is dened in t he Hu par amet er. The models
MCFIL, MCLIN, MLEF, MLIN, MLOC, and MLSC suppor t micr ost r ip cover
effect .
5. When t he Hu par amet er of t he subst r at e is less t han
100*Thickness_of_subst r at e, t he impedance calculat ion will not be pr oper ly
done if WALL1 and WALL2 ar e left blank.
6. The micr ost r ip cover uses a per t ur bat ional t echnique based on t he assumpt ion
t hat a signicant por t ion of ener gy is in t he subst r at e bet ween t he conduct or
and t he lower gr ound. It assumes t hat a micr ost r ip line is beneat h it . The
micr ost r ip cover (Hu) and t he Er par amet er wer e not int ended t o be used in t he
limit ing case wher e t he congur at ion of t he MLIN wit h sub and cover conver ges
t o a st r ipline t opology.
MSUBST3 (Microstrip Three-Layer Substrate) 2-95
MSUBST3 (Microstrip Three-Layer Substrate)
Symbol
Illustration
Parameters
Er [1] = dielect r ic const ant
H[1] = subst r at e height , in specied unit s
TanD[1] = dielect r ic loss t angent
T[1] = conduct or t hickness, in specied unit s
Cond[1] = conduct or conduct ivit y, in Siemen/met er
Er [2] = dielect r ic const ant
H[2] = subst r at e height , in specied unit s
TanD[2] = dielect r ic loss t angent
T[2] = conduct or t hickness, in specied unit s
(2) (2) (2),TanD(2),
(1)
(1), (1) TanD(1),
Cond(2)
Cond(1)
LayerViaName(1)
LayerViaName(2)
LayerName(2)
LayerName(3)
LayerName(1)
2-96 MSUBST3 (Microstrip Three-Layer Substrate)
Microstrip Components
Cond[2] = conduct or conduct ivit y, in Siemen/met er
Layer Name[1] = (for Layout opt ion) layout layer t o which conduct or s on t he t op
subst r at e is mapped. Default is cond.
Layer Name[2] = (for Layout opt ion) layout layer t o which conduct or s on t he bot t om
subst r at e is mapped. Default is cond2.
Layer ViaName[1] = (for Layout opt ion) layout layer t o which t he t r ansit ion bet ween
t he br idge/under pass is mapped. Default is diel2.
Range of Usage
N/A
Notes/Equations/References
1. MSUBST3 is r equir ed for MRINDSBR and MRINDELM component s.
2. Conduct or losses ar e account ed for when Cond < 4.110
17
S/m and T > 10
-9
.
Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
3. The micr ost r ip cover uses a per t ur bat ional t echnique based on t he assumpt ion
t hat a signicant por t ion of ener gy is in t he subst r at e bet ween t he conduct or
and t he lower gr ound. It assumes t hat a micr ost r ip line is beneat h it . The
micr ost r ip cover [Hu] and t he Er par amet er wer e not int ended t o be used in t he
limit ing case wher e t he congur at ion of t he MLIN wit h sub and cover conver ges
t o a st r ipline t opology.
MTAPER (Microstrip Width Taper) 2-97
MTAPER (Microstrip Width Taper)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Er 128
0.01 H (W1, W2) 100 H
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a micr ost r ip line macr o-model
developed by Agilent . The t aper is const r uct ed fr om a ser ies of straight
micr ost r ip sect ions of var ious widt hs t hat ar e cascaded t oget her. The micr ost r ip
line model is t he MLIN model. The number of sect ions is fr equency dependent .
Disper sion, conduct or loss, and dielect r ic loss effect s ar e included in t he
micr ost r ip model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
2-98 MTEE (Microstrip T-Junction)
Microstrip Components
MTEE (Microstrip T-Junction)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
W3 = conduct or widt h at pin 3, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.05 H W1 20 H
0.05 H W2 20 H
0.05 H W3 20 H
Er 20
Wlar gest /Wsmallest 5
wher e
Wlar gest , Wsmallest ar e t he lar gest , smallest widt h among W2, W2, W3
f(GHz) H (mm) 0.4 Z0
wher e
MTEE (Microstrip T-Junction) 2-99
Z0 is t he char act er ist ic impedance of t he line wit h Wlar gest
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model. The
model modies E. Hammer st ad model for mula t o calculat e t he Tee junct ion
discont inuit y at t he locat ion dened in t he r efer ence for wide r ange validit y. A
r efer ence plan shift is added t o each of t he por t s t o make t he r efer ence planes
consist ent wit h t he layout .
2. The cent er lines of t he st r ips connect ed t o pins 1 and 2 ar e assumed t o be
aligned.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. E. Hammer st ad, Comput er-Aided Design of Micr ost r ip Coupler s Using
Accur at e Discont inuit y Models, MTT S ymposium Digest, 1981.
Equivalent Circuit
l
1
l
2
Z
1
X
a
X
a
Z
2
X
b
n = 1
2-100 MTEEO (Obsolete Libra Microstrip T-Junction)
Microstrip Components
MTEEO (Obsolete Libra Microstrip T-Junction)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
W3 = conduct or widt h at pin 3, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 + W3 0.5
W2 + W3 0.5
0.10 H W1 10 H
0.10 H W2 10 H
0.10 H W3 10 H
Er 128
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
MTEEO (Obsolete Libra Microstrip T-Junction) 2-101
H = subst r at e t hickness (fr om associat ed Subst )
= wavelengt h in t he dielect r ic
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model. The
model pr esent ed by Hammer st ad is used t o calculat e t he discont inuit y model at
t he locat ion dened in t he r efer ence. A r efer ence plan shift is t hen added t o
each of t he por t s t o make t he r efer ence planes consist ent wit h t he layout .
Disper sion is account ed for in bot h t he r efer ence plan shift s and t he shunt
suscept ance calculat ions using t he for mulas of Kir schning and J ansen.
2. The cent er lines of t he st r ips connect ed t o pins 1 and 2 ar e assumed t o be
aligned.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. E. Hammer st ad, Comput er-Aided Design of Micr ost r ip Coupler s Using
Accur at e Discont inuit y Models, MTT S ymposium Digest, 1981.
5. M. Kir schning and R. H. J ansen, Electronics Letters, J anuar y 18, 1982.
Equivalent Circuit
l
3
jB
t
()
l
1
l
2
l:na l:nb
Z
3
Z
2
Z
1
2-102 MTFC (Microstrip Thin Film Capacitor)
Microstrip Components
MTFC (Microstrip Thin Film Capacitor)
Symbol
Illustration (Layout):
Parameters
Subst = micr ost r ip subst r at e name
W = dielect r ic widt h common t o bot h met al plat es, in specied unit s
L = dielect r ic lengt h common t o bot h met al plat es, in specied unit s
CPUA = capacit ance per unit ar ea, pf/mm
2
T = t hickness of capacit or dielect r ic, in specied unit
RsT = sheet r esist ance of t op met al plat e, in ohms per squar e
RsB = sheet r esist ance of bot t om met al plat e, in ohms per squar e
TT = t hickness of t op met al plat e, in specied unit s
W
DO
COB
COT 1 2
L
DO
COB
COT
TT
T
TB
1
2
Microstrip Substrate
Capacitor
Dielectric
Bottom-plate
Metal
Top-plate
Metal
Dielectric
Via
MTFC (Microstrip Thin Film Capacitor) 2-103
TB = t hickness of bot t om met al plat e, in specied unit s
COB = bot t om conduct or over lap, in specied unit s
Temp = physical t emper at ur e, in C
COT = (for Layout opt ion) t op conduct or over lap, in specied unit s
DO = (for Layout opt ion) dielect r ic over lap, in specied unit s
Range of Usage
0.0l H (W + 2.0 COB) 100.0 H
1 Er 128
COB > 0
T > 0
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Er = dielect r ic const ant (fr om associat ed Subst )
Notes/Equations/References
1. This is a dist r ibut ed MIM capacit or model based on t he
coupled-t r ansmission-line appr oach. The conduct or loss for bot h met al plat es is
calculat ed fr om t he sheet r esist ance (skin-effect is not modeled.) The dielect r ic
loss is calculat ed fr om t he loss t angent . (The TanD specicat ion applies t o t he
dielect r ic bet ween t he t wo met al plat es and not t o t he MSUB subst r at e.)
Coupling capacit ance fr om bot h met al plat es t o t he gr ound plane is account ed
for.
2. Thickness of t he dielect r ic T is r equir ed for calculat ing t he mut ual coupling
bet ween t he t wo met al plat es. Thickness of t he t wo met al plat es, TT and TB,
ar e used for calculat ing micr ost r ip par amet er s.
3. The model does not include a connect ion (such as an air-br idge) fr om t he t op
met al (pin 2) t o t he connect ing t r ansmission line. It must be included
separ at ely by t he user for simulat ion as well as layout pur poses.
4. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
5. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
2-104 MTFC (Microstrip Thin Film Capacitor)
Microstrip Components
6. In t he layout , t he t op met al will be on layer cond2, t he bot t om met al on layer
cond, t he capacit or dielect r ic on layer diel, and t he dielect r ic via layer on layer
diel2.
7. J. P. Mondal, An Exper iment al Ver icat ion of a Simple Dist r ibut ed Model of
MIM Capacit or s for MMIC Applicat ions, IEEE Transactions on Microwave
Theory Tech., Vol. MTT-35, No.4, pp. 403-408, Apr il 1987.
Equivalent Circuit
L
11
G
C
12
R
1
L
22
R
2
L
12
C
20
G
C
12
C
10
L
11
R
1
C
12 G
Bottom
plate
Top
plate
Ground
plane
L
11
= inductance/unit length of the top plate
L
22
= inductance/unit length of the bottom plate
L
12
= mutual inductance between the plates/units length of the capacitor
R
1
= loss resistance/unit length of the top plate
R
2
= loss resistance/unit length of the bottom plate
G = loss conductance of the dielectric/unit length of the capacitor
C
12
= capacitance/unit length of the capacitor
C
10
= capacitance with respect to ground/unit length of the top plate (due to the substrate effects)
C
20
= capacitance with respect to ground/unit length of the bottom plate (due to the substrate
effects)
RIBBON (Ribbon) 2-105
RIBBON (Ribbon)
Symbol
Illustration
Parameters
W = conduct or widt h, in specied unit s
L = conduct or lengt h, in specied unit s
Rho = met al r esist ivit y (r elat ive t o gold)
Temp = physical t emper at ur e, in C
AF = (for Layout opt ion) ar ch fact or ; r at io of dist ance bet ween bond point s t o act ual
r ibbon lengt h
CO = (for Layout opt ion) conduct or over lap; dist ance fr om edge connect or
A1 = (for Layout opt ion) angle of depar t ur e fr om r st pin
A2 = (for Layout opt ion) angle of depar t ur e fr om second pin
BandLayer = (for Layout opt ion) layer on which t he wir e/r ibbon is dr awn; default = 6
(bond)
Range of Usage
N/A
2-106 RIBBON (Ribbon)
Microstrip Components
Notes/Equations/References
1. Alt hough t his component is included in t he Microstrip Components libr ar y, it
does not use a micr ost r ip subst r at e (MSUB).
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
4. The r ibbon bond layer t o t he conductor layer t r ansit ion is dr awn on t he diel2
layer. The widt h of t he diel2 layer is CO, t he conduct or offset . If CO is 0, t he
t r ansit ion is dr awn as a zer o widt h polygon. The t r ansit ion is only for layout
pur poses and is not t aken int o account in t he cir cuit simulat or.
Equivalent Circuit
TFC (Thin Film Capacitor) 2-107
TFC (Thin Film Capacitor)
Symbol
Illustration (Layout):
Parameters
W = conduct or widt h, in specied unit s
L = conduct or lengt h, in specied unit s
T = dielect r ic t hickness, in specied unit s
Er = r elat ive dielect r ic const ant
Rho = met al r esist ivit y of conduct or (r elat ive t o gold)
TanD = dielect r ic loss t angent value
Temp = physical t emper at ur e, in C
CO = (for Layout opt ion) conduct or over lap
DO = (for Layout opt ion) dielect r ic over lap
DielLayer = (for Layout opt ion) layer on which t he dielect r ic is dr awn;
default = 4 (diel)
2-108 TFC (Thin Film Capacitor)
Microstrip Components
Cond2Layer = (for Layout opt ion) layer on which t he air br idge is dr awn;
default = 2(cond2)
Range of Usage
N/A
Notes/Equations/References
1. The fr equency-domain analyt ical model is a ser ies R-C, lumped component
net wor k. The conduct or losses wit h skin effect and dielect r ic losses ar e modeled
by t he ser ies r esist ance. The par allel plat e capacit ance is modeled by t he ser ies
capacit ance.
2. Alt hough t his component is included in t he Microstrip Components libr ar y, it
does not use a micr ost r ip subst r at e (MSUB).
3. For a dist r ibut ed model, use MTFC inst ead of TFC.
4. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
5. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
6. Pins 1 and 2 ar e on t he mask layer cond for pr imar y met allizat ion. The t op of
t he capacit or is for med on t he cond2 layer, wit h t he conduct or over lapping t he
connect ing line at pin 2 by CO.
7. K. C. Gupt a, R. Gar g, R. Chadha, Computer-Aided Design of Microwave
Circuits, Ar t ech House, 1981, pp. 213-220.
Equivalent Circuit
R C
TFC (Thin Film Capacitor) 2-109
Additional Illustration
2-110 TFR (Thin Film Resistor)
Microstrip Components
TFR (Thin Film Resistor)
Symbol
Illustration
Parameters
Subst = micr ost r ip subst r at e name
W = conduct or widt h, in specied unit s
L = conduct or lengt h, in specied unit s
Rs = sheet r esist ivit y, in ohms/squar e
Fr eq = fr equency for scaling sheet r esist ivit y, in her t z
Temp = physical t emper at ur e, in C
CO = (for Layout opt ion) conduct or offset ; in specied unit s
Range of Usage
0.01 H W 100 H
wher e
H = subst r at e t hickness (fr om associat ed Subst )
Notes/Equations/References
1. The fr equency-domain analyt ical model is a lossy micr ost r ip line model
developed by Agilent . The micr ost r ip line model is based on t he for mula of
Hammer st ad and J ensen. Conduct or loss wit h skin effect is included; however,
disper sion, dielect r ic loss and t hickness cor r ect ion ar e not included.
2. If Fr eq is set t o a value ot her t han zer o, t hen Rs is scaled wit h fr equency as
follows:
Rs (f) = Rs (Fr eq) (f/Fr eq) (for micr ost r ip)
TFR (Thin Film Resistor) 2-111
If Fr eq=0, t hen Rs is const ant wit h r espect t o fr equency. Set t ing Fr eq=0 is
cor r ect in most cases.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. E. Hammer st ad and O. J ensen, Accur at e Models for Micr ost r ip
Comput er-Aided Design, MTT S ymposium Digest, 1980, pp. 407-409.
2-112 VIA (Tapered Via Hole in Microstrip)
Microstrip Components
VIA (Tapered Via Hole in Microstrip)
Symbol
Illustration
Parameters
D1 = diamet er at pin 1, in specied unit s
D2 = diamet er at pin 2, in specied unit s
H = subst r at e t hickness, in specied unit s
T = conduct or t hickness, in specied unit s
W = (for Layout opt ion) widt h of conduct or at t ached t o via hole, in specied unit s
Cond1Layer = (for Layout opt ion) layer on which pin 1s t r ansit ional met al is dr awn;
default = 1 (cond)
HoleLaye = (for Layout opt ion) layer on which t he Via-hole is dr awn; default =5(hole)
Cond2Layer = (for Layout opt ion) layer on which pin 1s t r ansit ional met al is dr awn;
default =2 (cond2)
Range of Usage
H 2 (gr eat er of D1 or D2)
= wavelengt h in t he dielect r ic
H
VIA (Tapered Via Hole in Microstrip) 2-113
Notes/Equations/References
1. The fr equency-domain analyt ical model is a ser ies, lumped induct ance as
shown in t he symbol. Conduct or and dielect r ic losses ar e not modeled. The
model was developed by Vijai K. Tr ipat hi for Agilent .
2. In addit ion t o t he t wo cir cles on t he conduct ing layer s, t he ar t wor k includes a
cir cle for t he via-hole on t he hole layer. The diamet er for t he via-hole is set by
D1, t he diamet er at pin 1.
3. Alt hough t his component is included in t he Micr ost r ip Component s libr ar y, it
does not use a micr ost r ip subst r at e (MSUB).
2-114 VIA2 (Cylindrical Via Hole in Microstrip)
Microstrip Components
VIA2 (Cylindrical Via Hole in Microstrip)
Symbol
Illustration
Parameters
D = diamet er at pin 1, in specied unit s
H = subst r at e t hickness, in specied unit s
T = conduct or t hickness, in specied unit s
W = (for Layout opt ion) widt h of conduct or at t ached t o via hole, in specied unit s
Temp = physical t emper at ur e, in C
Cond1Layer = (for Layout opt ion) layer on which t he bot t om t r ansit ional met al is
dr awn; default = 1 (cond)
HoleLaye = (for Layout opt ion) layer on which t he Via-hole is dr awn; default =5(hole)
Cond2Layer = (for Layout opt ion) layer on which t he t op t r ansit ional met al is dr awn;
default =2 (cond2)
Range of Usage
100 M < H < 635 M
0.2
D
H
----- 1.5 < <
0 T
D
2
---- <
VIA2 (Cylindrical Via Hole in Microstrip) 2-115
W > D
2.2 < Er < 20
wher e
Er = dielect r ic const ant (fr om associat ed Subst )
H = subst r at e t hickness
T = conduct or t hickness
Notes/Equations/References
1. The fr equency-domain analyt ical model is a ser ies R-L, lumped component
net wor k as shown in t he symbol. The model equat ions ar e based on t he
numer ical analysis and for mula of Goldfar b and Pucel. The conduct or loss wit h
skin effect is included in t he r esist ance calculat ion. The model equat ions
pr ovide a smoot h t r ansit ion fr om dc r esist ance t o r esist ance due t o skin effect at
high fr equencies. Dielect r ic loss is not included in t he model.
2. Alt hough t his component is included in t he Microstrip Components libr ar y, it
does not use a micr ost r ip subst r at e (MSUB).
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. M. Goldfar b and R. Pucel. Modeling Via Hole Gr ounds in Micr ost r ip, IEEE
Microwave and Guided Wave Letters, Vol. 1, No. 6, J une 1991, pp. 135-137.
1
W
H
----- 2.2 < <
2-116 WIRE (Round Wire)
Microstrip Components
WIRE (Round Wire)
Symbol
Illustration
Parameters
D = wir e diamet er, in specied unit s
L = wir e lengt h, in specied unit s
Rho = met al r esist ivit y (r elat ive t o gold)
Temp = physical t emper at ur e, in C
AF = (for Layout opt ion) ar ch fact or ; r at io of dist ance bet ween t wo pins t o wir e lengt h
CO = (for Layout opt ion) conduct or offset ; dist ance fr om edge of conduct or
A1 = (for Layout opt ion) angle of depar t ur e fr om r st pin
A2 = (for Layout opt ion) angle bet ween dir ect ion of r st and second pins
BondLayer = (for Layout opt ion) layer on which t he wir e/r ibbon is dr awn; default =6
(bond)
Range of Usage
N/A
TOP VIEW
2-117
Notes/Equations/References
1. Alt hough t his component is included in t he Microstrip Components libr ar y, it
does not use a micr ost r ip subst r at e (MSUB).
2. Wir e and Ribbon component s ser ve as air br idges t hat ar e par allel t o t he
sur face of t he subst r at e. This pr ovides a way t o connect t he cent er of MRIND,
MRINDNBR, and MSIND component s.
3. Bulk r esist ivit y of gold is used for Rho = 2.44 micr ohm-cm.
4. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
5. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
6. The wir e bond layer t o t he conductor layer t r ansit ion is dr awn on t he diel2
layer. The widt h of t he diel2 layer is CO, t he conduct or offset . If CO is zer o, t he
t r ansit ion is dr awn as a zer o widt h polygon. The t r ansit ion is only for layout
pur poses and is not t aken int o account in t he cir cuit simulat or.
Equivalent Circuit
2-118
Microstrip Components
3-1
Chapter 3: Multilayer Interconnects
3-2 COMBINE2ML (Combine 2 Coupled-Line Components)
Multilayer Interconnects
COMBINE2ML (Combine 2 Coupled-Line Components)
Symbol
Parameters
Coupled[1] = r st component t o be combined
Coupled[2] = second component t o be combined
S = spacing bet ween Coupled[1] and Coupled[2]
Range of Usage
N/A
Notes/Equations/References
1. Combining coupled-line component s allows you t o cr eat e a component of mor e
coupled lines by combining sever al individual component s int o a single
component . For example, t o cr eat e 20 coupled lines, you can combine t wo
10-line component s. Or, use t hem t o combine small set s of lines inst ead of
r einser t ing component s wit h a gr eat er number of lines.
2. You can combine coupled lines of const ant widt h and spacing, coupled lines wit h
var ying widt h and spacing, and coupled pads and lines. The component s t o be
combined must r efer t o t he same subst r at e, be par allel, and be of t he same
lengt h.
Three-line component
Two-line component
S of combined component
COMBINE3ML (Combine 3 Coupled-Line Components) 3-3
COMBINE3ML (Combine 3 Coupled-Line Components)
Symbol
Parameters
Coupled[1] = r st component t o be combined
Coupled[2] = second component t o be combined
Coupled[3] =t hir d component t o be combined
S[1] =spacing bet ween Coupled[1] and Coupled[2]
S[2] =spacing bet ween Coupled[2] and Coupled[3]
Range of Usage
N/A
Notes/Equations/References
1. Combining coupled-line component s allows you t o cr eat e a component of mor e
coupled lines by combining sever al individual component s int o a single
component . For example, t o cr eat e 20 coupled lines, you can combine t wo
10-line component s. Or, use t hem t o combine small set s of lines inst ead of
r einser t ing component s wit h a gr eat er number of lines.
2. You can combine coupled lines of const ant widt h and spacing, coupled lines wit h
var ying widt h and spacing, and coupled pads and lines. The component s t o be
combined must r efer t o t he same subst r at e, be par allel, and be of t he same
lengt h.
3-4 COMBINE4ML (Combine 4 Coupled-Line Components)
Multilayer Interconnects
COMBINE4ML (Combine 4 Coupled-Line Components)
Symbol
Parameters
Coupled[1] =r st component t o be combined
Coupled[2] =second component t o be combined
Coupled[3] =t hir d component t o be combined
Coupled[4] =four t h component t o be combined
S[1] =spacing bet ween Coupled[1] and Coupled[2]
S[2] =spacing bet ween Coupled[2] and Coupled[3]
S[3] =spacing bet ween Coupled[3] and Coupled[4]
Range of Usage
N/A
Notes/Equations/References
1. Combining coupled-line component s allows you t o cr eat e a component of mor e
coupled lines by combining sever al individual component s int o a single
component . For example, t o cr eat e 20 coupled lines, you can combine t wo
10-line component s. Or, use t hem t o combine small set s of lines inst ead of
r einser t ing component s wit h a gr eat er number of lines.
2. You can combine coupled lines of const ant widt h and spacing, coupled lines wit h
var ying widt h and spacing, and coupled pads and lines. The component s t o be
combined must r efer t o t he same subst r at e, be par allel, and be of t he same
lengt h.
3-5 COMBINE5ML (Combine 5 Coupled-Line Components)
Multilayer Interconnects
COMBINE5ML (Combine 5 Coupled-Line Components)
Symbol
Parameters
Coupled[1] =r st component t o be combined
Coupled[2] =second component t o be combined
Coupled[3] =t hir d component t o be combined
Coupled[4] =four t h component t o be combined
Coupled[5] =ft h component t o be combined
S[1] =spacing bet ween Coupled[1] and Coupled[2]
S[2] =spacing bet ween Coupled[2] and Coupled[3]
S[3] =spacing bet ween Coupled[3] and Coupled[4]
S[4] =spacing bet ween Coupled[4] and Coupled[5]
Range of Usage
N/A
Notes/Equations/References
1. Combining coupled-line component s allows you t o cr eat e a component of mor e
coupled lines by combining sever al individual component s int o a single
component . For example, t o cr eat e 20 coupled lines, you can combine t wo
10-line component s. Or, use t hem t o combine small set s of lines inst ead of
r einser t ing component s wit h a gr eat er number of lines.
2. You can combine coupled lines of const ant widt h and spacing, coupled lines wit h
var ying widt h and spacing, and coupled pads and lines. The component s t o be
combined must r efer t o t he same subst r at e, be par allel, and be of t he same
lengt h.
3-6 Coupled Lines, Constant Width & Spacing
Multilayer Interconnects
Coupled Lines, Constant Width & Spacing
ML1CTL_C to ML8CTL_C (1-8 Coupled Lines, Constant Width & Spacing)
ML16CTL_C (16 Coupled Lines, Constant Width & Spacing)
Symbol
Parameters
Subst =subst r at e name
Lengt h =line lengt h, in specied unit s
W =widt h of conduct or s, in specied unit s
S = spacing; default : 5.0 mil; also um mm, cm, met er, in
Layer =layer number of conduct or (value t ype: int eger )
RLGC_File = name of RLGC le
3-7 Coupled Lines, Constant Width & Spacing
Multilayer Interconnects
Reuse RLGC = yes t o r euse t he RLGC mat r ices st or ed in RLGC_File; no t o not r euse.
See Not e 5.
Side = (for Layout opt ion) t op or bot t om; specify side or boar d t o place inst ance
Range of Usage
W > 0
S > 0
Notes/Equations/References
1. Disper sion due t o skin effect and dielect r ic loss is calculat ed. Disper sion due t o
inhomogeneous dielect r ics is not consider ed.
2. These models ar e implement ed as t he numer ical solut ion of Maxwells
Equat ions for t he t wo-dimensional cr oss-sect ion geomet r y t hat is dened by t he
model par amet er s. Because a new numer ical comput at ion is per for med for each
unique set of geomet r ic or mat er ial par amet er s, t he evaluat ion of t hese models
may t ake a few seconds on some plat for ms. One effect of t his implement at ion is
t hat opt imizat ion of any set of t he geomet r ic or mat er ial par amet er s for t hese
models may r esult in a t ime-consuming analysis. Only one numer ical
comput at ion is r equir ed for an analysis t hat is only swept wit h r espect t o
fr equency. The evaluat ion t ime for t his model is signicant ly r educed for
conduct or s of 0 t hickness.
3. Conduct or loss (and it s cont r ibut ion t o noise) is not consider ed if conduct ivit y is
innit e or conduct or t hickness is 0.
4. A subst r at e must be named as t he S ubst par amet er and a mult ilayer
int er connect subst r at e denit ion t hat cor r esponds t o t his name must appear on
t he schemat ic.
5. If Reuse_RLGC is set t o yes, t he RLGC mat r ices will be r ead fr om t he le st or ed
on your disk. If you have changed t he subst r at e par amet er s or t r ansit ion
par amet er s, set t ing Reuse_RLGC t o yes will cause invalid r esult s. In most
cases, a set t ing of no is r ecommended. In cases in which you know t hat t he
subst r at e and t r ansmission par amet er s ar e xed in your simulat ion, you can
set Reuse_RLGC t o yes t o save some comput er t ime, as t he RLGC mat r ices will
not be r e-comput ed.
3-8 Coupled Lines, Variable Width & Spacing
Multilayer Interconnects
Coupled Lines, Variable Width & Spacing
ML2CTL_V to ML10CTL_V (2 to 10 Coupled Lines, Variable Width & Spacing)
Symbol
Parameters
Subst =subst r at e name
Lengt h =lengt h, in specied unit s
W[i] =widt h of it h conduct or, in specied unit s
S(i) = spacing bet ween it h and (i+1)t h conduct or s, in specied unit s. See not e 5.
Layer (i) =layer number of conduct or (value t ype: int eger )
RLGC_File = name of RLGC le
Reuse RLGC = yes t o r euse t he RLGC mat r ices st or ed in RLGC_File; no t o not r euse.
See Not e 5.
Side = (for Layout opt ion) t op or bot t om; specify side or boar d t o place inst ance
Range of Usage
Lengt h > 0
W > 0
Notes/Equations/References
3-9 Coupled Lines, Variable Width & Spacing
Multilayer Interconnects
1. Disper sion due t o skin effect and dielect r ic loss is calculat ed. Disper sion due t o
inhomogeneous dielect r ics is not consider ed.
2. These models ar e implement ed as t he numer ical solut ion of Maxwells
Equat ions for t he t wo-dimensional cr oss-sect ion geomet r y t hat is dened by t he
model par amet er s. Because a new numer ical comput at ion is per for med for each
unique set of geomet r ic or mat er ial par amet er s, t he evaluat ion of t hese models
may t ake a few seconds on some plat for ms. One effect of t his implement at ion is
t hat opt imizat ion of any set of t he geomet r ic or mat er ial par amet er s for t hese
models may r esult in a t ime-consuming analysis. Only one numer ical
comput at ion is r equir ed for an analysis t hat is only swept wit h r espect t o
fr equency. The evaluat ion t ime for t his model is signicant ly r educed for
conduct or s of 0 t hickness.
3. Conduct or loss (and it s cont r ibut ion t o noise) is not consider ed if conduct ivit y is
innit e or conduct or t hickness is 0.
4. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must be placed in t he
schemat ic.
5. If Reuse_RLGC is set t o yes, t he RLGC mat r ices will be r ead fr om t he le st or ed
on your disk. If you have changed t he subst r at e par amet er s or t r ansit ion
par amet er s, set t ing Reuse_RLGC t o yes will cause invalid r esult s. In most
cases, a set t ing of no is r ecommended. In cases in which you know t hat t he
subst r at e and t r ansmission par amet er s ar e xed in your simulat ion, you can
set Reuse_RLGC t o yes t o save some comput er t ime, as t he RLGC mat r ices will
not be r e-comput ed.
6. Spacing (S[i] is measur ed fr om t he r ight edge of t he it h conduct or t o t he left
edge of (it 1)t h conduct or. If (it 1)t h conduct or over lays wit h it h conduct or, S[i]
will be negat ive, as illust r at ed.
W[1] W[2]
S[2]
S[1]
3-10 MLACRNR (190-degree Corner, Changing Width)
Multilayer Interconnects
MLACRNR (190-degree Corner, Changing Width)
Symbol
Parameters
Subst =subst r at e name
W1 =widt h on one side, in specied unit s
W2 =widt h on t he ot her side, in specied unit s
Layer =layer number of conduct or (value t ype: int eger )
Range of Usage
W1 > 0
W2 > 0
Notes/Equations/References
1. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-11 Coupled 90-degree Corners, Changing Pitch
Multilayer Interconnects
Coupled 90-degree Corners, Changing Pitch
MLACRNR2 to MLACRNR8 (2 to 8 Coupled 90-degree Corners, Changing Pitch)
MLACRNR16 (16 Coupled 90-degree Corners, Changing Pitch)
Symbol
Parameters
Subst =subst r at e name
W1 =conduct or widt h on one side, in specied unit s
S1 =conduct or spacing on one side, in specied unit s
W2 =conduct or widt h on t he ot her side, in specied unit s
S2 =conduct or spacing on t he ot her side, in specied unit s
Layer =layer number of conduct or (value t ype: int eger )
Range of Usage
W1 > 0
W2 > 0
Notes/Equations/References
1. Coupled line cor ner s ar e modeled as st agger ed coupled lines. The discont inuit y
effect of cor ner s is not modeled.
3-12 Coupled 90-degree Corners, Changing Pitch
Multilayer Interconnects
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-13 MLCLE (Via Clearance)
Multilayer Interconnects
MLCLE (Via Clearance)
Symbol
Parameters
Subst =subst r at e name
DiamClear =clear ance diamet er, in specied unit s
DiamPad =pad diamet er, in specied unit s
Layer =layer number of t he clear ance (value t ype: int eger )
Range of Usage
DiamClear > 0
DiamPad > 0
DiamClear > DiamPad
Notes/Equations/References
1. This component is modeled as a capacit or t o gr ound.
2. A subst r at e must be named in t he Subst eld and a mult ilayer subst r at e
denit ion t hat cor r esponds t o t his name must appear on t he cir cuit page.
3. A via clear ance must be locat ed on a gr ound layer or a power layer. The pins of
MLCLE should be connect ed t o t he pins of MLVIAHOLE. MLCLE models t he
par asit ic capacit ance bet ween t he via hole and t he power /gr ound plane on
which MLCLE is locat ed.
3-14 Coupled Angled Corners, Constant Pitch
Multilayer Interconnects
Coupled Angled Corners, Constant Pitch
MLCRNR1 to MLCRNR8 (1 to 8 Coupled Angled Corners, Constant Pitch)
MLCRNR16 (16 Coupled Angled Corners, Constant Pitch)
Symbol
Parameters
Subst =subst r at e name
Angle =angle of bend, in degr ees
W =widt h of conduct or s, in specied unit s
S =spacing bet ween conduct or s, in specied unit
layer =layer number of conduct or (value t ype: int eger )
Range of Usage
W > 0
S > 0
0 Angle 90
Notes/Equations/References
1. Coupled line cor ner s ar e modeled as st agger ed coupled lines. The discont inuit y
effect of cor ner s is not modeled.
3-15 Coupled Angled Corners, Constant Pitch
Multilayer Interconnects
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-16 Coupled Crossovers
Multilayer Interconnects
Coupled Crossovers
MLCROSSOVER1 to MLCROSSOVER8 (1 to 8 Crossovers)
Symbol
Parameters
Subst =subst r at e name
W_Top =widt h of t op conduct or s, in specied unit s
W_Bot t om =widt h of bot t om conduct or s, in specied unit s
S_Top =spacing bet ween t op conduct or s, in specied unit s
S_Bot t om =spacing bet ween bot t om conduct or s, in specied unit s
Layer Top =t op layer number (value t ype: int eger )
Layer Bot t om =bot t om layer number (value t ype: int eger )
Range of Usage
W_Top > 0
W_Bot t om > 0
S_Top > 0
S_Bot t om > 0
Notes/Equations/References
3-17 Coupled Crossovers
Multilayer Interconnects
1. An impor t ant discont inuit y in high-speed digit al design is t he cr ossover
bet ween t wo adjacent signal layer s. The cr ossover causes par asit ic capacit ance,
r esult ing in high-fr equency cr osst alk. These cr ossover models ar e modeled as
coupled lines cascaded wit h junct ion coupling capacit or s. The models ar e
quasi-st at ic.
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3. Por t r efer ence planes ar e locat ed at t he edge of each cr ossover r egion, as shown
in Figur e 3-1. The capacit or is at t he junct ion wher e a hor izont al and ver t ical
line cr oss.
Figur e 3-1. Cr ossover r egion wit h por t r efer ence planes
Subst=fourlayer
W1=10 mil
S1=2 mil
LayerTop=1
W2=10 mil
S2=2 mil
LayerBottom=2
3-18 MLJCROSS (Cross Junction)
Multilayer Interconnects
MLJCROSS (Cross Junction)
Symbol
Parameters
Subst =subst r at e name
W1 =widt h of conduct or 1, in specied unit s
W2 =widt h of conduct or 2, in specied unit s
W3 =widt h of conduct or 3, in specied unit s
W4 =widt h of conduct or 4, in specied unit s
Layer =layer number (value t ype: int eger )
Range of Usage
W1 > 0
W2 > 0
W3 > 0
W4 > 0
Notes/Equations/References
1. The cr oss junct ion is t r eat ed as an ideal connect ion bet ween pins 1, 2, 3, and 4,
and is pr ovided t o facilit at e int er connect ions bet ween lines in layout .
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-19 MLJGAP (Open Gap)
Multilayer Interconnects
MLJGAP (Open Gap)
Symbol
Parameters
Subst =subst r at e name
G =widt h of gap, in specied unit s
W =widt h of conduct or, in specied unit s
Layer =layer number (value t ype: int eger )
Range of Usage
G > 0
W > 0
Notes/Equations/References
1. The gap is t r eat ed as an ideal open cir cuit bet ween pins 1 and 2, and is pr ovided
t o facilit at e layout .
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-20 MLJTEE (Tee Junction)
Multilayer Interconnects
MLJTEE (Tee Junction)
Symbol
Parameters
Subst =subst r at e name
W1 =widt h of conduct or 1, in specied unit s
W2 =widt h of conduct or 2, in specied unit s
W3 =widt h of conduct or 3, in specied unit s
Layer =layer number (value t ype: int eger )
Range of Usage
W[n] > 0
Notes/Equations/References
1. The t ee junct ion is t r eat ed as an ideal connect ion bet ween pins 1, 2, and 3, and
is pr ovided t o facilit at e int er connect ions bet ween lines or ient ed at differ ent
angles in layout .
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-21 MLOPENSTUB (Open Stub)
Multilayer Interconnects
MLOPENSTUB (Open Stub)
Symbol
Parameters
Subst =subst r at e name
Lengt h =lengt h of conduct or, in specied unit s
W =widt h of conduct or, in specied unit s
Layer =layer number (value t ype: int eger )
Range of Usage
W > 0
L > 0
Notes/Equations/References
1. If t he lengt h of t he st ub is zer o, t his component simulat es an open-end effect . If
t he lengt h is gr eat er t han zer o, t his component simulat es a lengt h of line and
an open-end effect .
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-22 Coupled Radial Lines
Multilayer Interconnects
Coupled Radial Lines
MLRADIAL1 to MLRADIAL5 (1 to 5 Radial Lines)
Symbol
Parameters
Subst =subst r at e name
X_Offset =hor izont al offset
Y_Offset =ver t ical offset
W_Left =widt h of conduct or on left side, in specied unit s
W_Right =widt h of conduct or on r ight side, in specied unit s
S_Left =spacing bet ween conduct or s on left side, in specied unit s
S_Right =spacing bet ween conduct or s on r ight side, in specied unit s
Layer =layer number of conduct or (value t ype: int eger )
Range of Usage
X_Offset > 0
Y_Offset > 0
W_Left > 0
W_Right > 0
3-23 Coupled Radial Lines
Multilayer Interconnects
S_Left > 0
S_Right > 0
Notes/Equations/References
1. Radial lines ar e modeled as a cascade of unifor m coupled line segment s. Each
segment is implement ed as t he numer ical solut ion of Maxwells Equat ions for
t he t wo-dimensional cr oss-sect ion geomet r y. For opt imizat ion or t uning,
zer o-t hickness conduct or is suggest ed t o speed up t he r un t ime.
2. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-24 Slanted Coupled Lines
Multilayer Interconnects
Slanted Coupled Lines
MLSLANTED1 to MLSLANTED8 (1 to 8 Slanted Coupled Lines)
MLSLANTED16 (16 Slanted Coupled Lines)
Symbol
Parameters
Subst =subst r at e name
X_Offset =hor izont al offset
Y_Offset =ver t ical offset
W =widt h of conduct or s, in specied unit s
S =spacing bet ween conduct or s, in specied unit s
Layer =layer number of conduct or s (value t ype: int eger )
Range of Usage
X_Offset > 0
3-25 Slanted Coupled Lines
Multilayer Interconnects
Y_Offset > 0
W > 0
S > 0
Notes/Equations/References
1. Disper sion due t o skin effect and dielect r ic loss is calculat ed. Disper sion due t o
inhomogeneous dielect r ics is not consider ed.
2. These models ar e implement ed as t he numer ical solut ion of Maxwells
Equat ions for t he t wo-dimensional cr oss-sect ion geomet r y t hat is dened by t he
model par amet er s. Because a new numer ical comput at ion is per for med for each
unique set of geomet r ic or mat er ial par amet er s, t he evaluat ion of t hese models
may t ake a few seconds on some plat for ms. One effect of t his implement at ion is
t hat opt imizat ion of any set of t he geomet r ic or mat er ial par amet er s for t hese
models may r esult in a t ime-consuming analysis. Only one numer ical
comput at ion is r equir ed for an analysis t hat is only swept wit h r espect t o
fr equency. The evaluat ion t ime for t his model is signicant ly r educed for
conduct or s of 0 t hickness.
3. Conduct or loss (and it s cont r ibut ion t o noise) is not consider ed if conduct ivit y is
innit e or conduct or t hickness is 0.
4. A subst r at e must be named in t he Subst eld and a mult ilayer int er connect
subst r at e denit ion t hat cor r esponds t o t his name must appear on t he cir cuit
page.
3-26 MLSUBSTRATES
Multilayer Interconnects
MLSUBSTRATES
MLSUBSTRATE2 to MLSUBSTRATE10 (2- to 10-Layer Substrates)
MLSUBSTRATE12 (12-Layer Substrate)
MLSUBSTRATE14 (14-Layer Substrate)
MLSUBSTRATE16 (16-Layer Substrate
Symbol
Illustrations:
MLSUBSTRATE2
MLSUBSTRATE3
MLSUBSTRATE4
MLSUBSTRATE5
MLSUBSTRATE6
3-27 MLSUBSTRATES
Multilayer Interconnects
MLSUBSTRATE7
MLSUBSTRATE8
MLSUBSTRATE9
MLSUBSTRATE10
MLSUBSTRATE12
3-28 MLSUBSTRATES
Multilayer Interconnects
Parameters
Er [n] =dielect r ic const ant
H[n] =height of subst r at e, in specied unit s
TanD[n] =dielect r ic loss t angent
T[n] =t hickness, in specied unit s
Cond[n] =conduct ance, in conduct ance per met er s
Layer Type[n] =met al denit ion: blank, signal, gr ound, power
Layer Name[n] =(for Layout opt ion) layer t o which cond is mapped
Layer ViaName[n] =(for Layout opt ion) layer t o which via hole is mapped
Range of Usage
Er [n] > 0
H[n] > 0
MLSUBSTRATE14 MLSUBSTRATE16
3-29 MLSUBSTRATES
Multilayer Interconnects
TanD[n] 0
Cond[n] > 0
Notes/Equations/References
1. At least one subst r at e component must be inser t ed as par t of any mult ilayer
cir cuit design. The name of t he subst r at e must be inser t ed in t he Subst eld of
ever y mult ilayer int er connect component displaying t he eld in t he cir cuit .
Subst r at e names can be up t o 10 char act er s long; t hey must begin wit h a let t er,
not a number or a symbol.
2. If t he conduct or t hickness T[n] is set t o zer o or if t he conduct ivit y Cond[n] is set
t o innit y, t he conduct or is assumed t o have zer o loss.
T[n] can be used t o specify t he posit ion of t he t r ace on a subst r at e. If T[n] is
posit ive, t he t r ace gr ows up int o t he dielect r ic mat er ial; if T[n] is negat ive, t he
t r ace gr ows down int o t he mat er ial. For gr ound and power supply layer s,
assigning T[n] as posit ive or negat ive has no effect . See Figur e 3-2.
3. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7..
4. The subst r at e schemat ic symbol appear s as a cr oss-sect ion of a subst r at e. Each
layer is labeled, and you can easily set t he par amet er s for each layer.
A signal layer has component s on it .
A power or gr ound layer is a solid sheet of met al. No component s ar e on t his
layer ot her t han clear ance holes.
Figur e 3-2. Effect of posit ive and negat ives of T[n]
3-30 MLVIAHOLE (Via Hole)
Multilayer Interconnects
MLVIAHOLE (Via Hole)
Symbol
Parameters
Subst =subst r at e name
DiamVia =via diamet er, in specied unit s
T =via t hickness, in specied unit s
Cond =conduct ivit y
Layer [1] =st ar t ing layer number (value t ype: int eger )
Layer [2] =ending layer number (value t ype: int eger )
Range of Usage
DiamVia > 0
T > 0
Cond > 0
Notes/Equations/References
1. This component is modeled as an induct or.
2. A subst r at e must be named in t he Subst eld and a mult ilayer subst r at e
denit ion t hat cor r esponds t o t his name must be placed in t he schemat ic.
3-31 MLVIAPAD (Via Pad)
Multilayer Interconnects
MLVIAPAD (Via Pad)
Symbol
Parameters
Subst = subst r at e name
DiamVia = via diamet er, in specied unit s
DiamPad = pad diamet er, in specied unit s
Layer = layer number (value t ype: int eger )
Angle = (Layout opt ion) input pin t o out put pin angle, in degr ees
Range of Usage
DiamVia > 0
DiamPad > 0
180 Angle +180
Notes/Equations/References
1. This component is modeled as a capacit or t o gr ound.
2. A subst r at e must be named in t he Subst eld and a mult ilayer subst r at e
denit ion t hat cor r esponds t o t his name must appear on t he cir cuit page.
3. A via pad connect s signal t r ace t o a via hole. Pin 1 of MLVIAPAD should be
connect ed t o a signal t r ace. Pin 2 should be connect ed t o a MLVIAHOLE.
4. Angle r efer s t o t he angle bet ween t wo connect ing lines and is necessar y for
per for ming layout . In Figur e 3-3 t he angle bet ween t he t wo t r aces is 90. The
angle par amet er s of t he t wo pads used in connect ing t hese t r aces must be
3-32 MLVIAPAD (Via Pad)
Multilayer Interconnects
specied so t hat t he differ ence bet ween t hem is 90. Ther efor e, t he angle of t he
r st pad may be 45 and t he second 45, or 0 and 90, r espect ively.
Figur e 3-3. The 90 angles of t he connect ing lines
4-1
Chapter 4: Stripline Components
4-2 SBCLIN (Broadside-Coupled Lines in Stripline)
Stripline Components
SBCLIN (Broadside-Coupled Lines in Stripline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = conduct or widt h, in specied unit s
S = conduct or spacing, in specied unit s; see Not es 3 and 4.
L = lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout opt ion) offset fr om pin 1 t o conduct or cent er line
W2 = (for Layout opt ion) offset fr om pin 2 t o conduct or cent er line
W3 = (for Layout opt ion) offset fr om pin 3 t o conduct or cent er line
W4 = (for Layout opt ion) offset fr om pin 4 t o conduct or cent er line
P1Layer = (for Layout opt ion) layer associat ed wit h pin 1 conduct or ;
cond1, cond2
SBCLIN (Broadside-Coupled Lines in Stripline) 4-3
Range of Usage
Er 1
0.35
0.9
0.7
wher e
Er = dielect r ic const ant (fr om associat ed SSUB(O) )
B = gr ound plane spacing (fr om associat ed SSUB(O) )
S = cent er layer t hickness (conduct or spacing)
Notes/Equations/References
1. Conduct or t hickness cor r ect ion is applied in t he fr equency-domain analyt ical
model.
2. Coupled lines ar e par allel t o t he gr ound plane.
3. Component s t hat r efer t o an SSUBO wit h S=0 give t he same simulat ion r esult s
as if t hey r efer t o an ot her wise equivalent SSUB.
4. If t he Subst par amet er r efer s t o an SSUBO, t he SSUBOs spacing par amet er (S)
value is used r at her t han t he component spacing par amet er (S). This is t r ue
r egar dless of whet her t he component s S is set t o a r eal value or t o unspecied.
If it is set t o a r eal value, a war ning message is displayed.
5. For coupled-st r ipline of negligible t hickness (T=0), t he even- and odd-mode
char act er ist ic line impedances ar e calculat ed fr om t he exact for mula der ived by
Shelt on using confor mal mapping. For a st r ipline of nit e t hickness, an
appr oximat e model developed by William Get singer for Agilent and based on
t he for mula of Shelt on, Cohn, and Wheeler is used t o calculat e t he even- and
odd-mode impedances. Addit ionally, t he at t enuat ion for mula developed by
Wheeler is used. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
6. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
W
B S
--------------
S
B
----
W
S
-----
4-4 SBCLIN (Broadside-Coupled Lines in Stripline)
Stripline Components
7. S. B. Cohn, Thickness Cor r ect ions for Capacit ive Obst acles and St r ip
Conduct or s, IRE Trans. Microwave Theory and Techniques, Vol. MTT-8,
November, 1960, pp. 638-644.
8. J. P. Shelt on, Impedance of Offset Par allel-Coupled St r ip Tr ansmission Lines,
IEEE Trans. Microwave Theory and Techniques, Vol. MTT-14, J anuar y, 1966,
pp. 7-15.
9. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
SBEND (Unmitered Stripline Bend) 4-5
SBEND (Unmitered Stripline Bend)
Symbol
Illustration
Parameters
Subst = subst r at e (SSUB or SSUBO) inst ance name
W = conduct or widt h, in specied unit s
Angle = angle of bend, in degr ees
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
W 0
Angle = any value in Layout
15 Angle 120 (for 1)
0.25 1.75 (for Angle = 90)
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
Angle
W
B
-----
W
B
-----
4-6 SBEND (Unmitered Stripline Bend)
Stripline Components
Notes/Equations/References
1. The fr equency-domain analyt ical model is t he st at ic, lumped component model
of Alt schuler and Oliner. The for mulas ar e based on a t heor et ical analysis of t he
E-plane bend in par allel-plat e waveguide. Conduct or and dielect r ic losses ar e
not included in t he simulat ion.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. In layout , a posit ive value for Angle dr aws a bend in t he count er clockwise
dir ect ion fr om pin 1 t o 2; a negat ive value for Angle dr aws a bend in t he
clockwise dir ect ion.
4. H. M. Alt schuler and A. A. Oliner. Discont inuit ies in t he Cent er Conduct or of
Symmet r ic St r ip Tr ansmission Line, IEEE Transactions on Microwave Theory
and Techniques, Vol. MTT-8, May, 1960. (Cf. Sect ion III-H.)
Equivalent Circuit
L
L
C
4-7
SBEND2 (Stripline Bend -- Arbitrary Angle/Miter)
Symbol
Illustration
Parameters
Subst = subst r at e (SSUB or SSUBO) inst ance name
W = conduct or widt h, in specied unit s
Angle = angle of bend, in degr ees
M = mit er fr act ion
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
W 5.7
B 0.2
W 0.2
Angle Angle
4-8
Stripline Components
M 0.01 Angle (degr ees)
M 0.8
20 Angle 150
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
= wavelengt h in t he dielect r ic
W 0 for Layout
Notes/Equations/References
1. The fr equency-domain analyt ical model is a st at ic, lumped component model
developed for Agilent by William J. Get singer. The model is based on t he
waveguide E-plane par allel-plat e model analyzed by J. Schwinger and
published in Mar cuvit z's book, Waveguide Handbook. Based on t he wor k of
Oliner, t he waveguide model is t r ansfor med int o it s dual st r ipline model.
Conduct or and dielect r ic losses ar e included in t he simulat ion. Refer ence plane
shift s ar e added for lar ge mit er s (M > M
s
).
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. Ther e ar e t wo possible r efer ence plane locat ions available:
Small mit er s wher e t he r efer ence planes line up wit h t he inner cor ner of t he
bend.
Lar ge mit er s wher e t he r efer ence planes line up wit h t he cor ner bet ween t he
connect ing st r ip and t he mit er ed sect ion.
4. In layout , a posit ive value for Angle dr aws a bend in t he count er clockwise
dir ect ion fr om pin 1 t o 2; a negat ive value for Angle dr aws a bend in t he
clockwise dir ect ion.
5. H. M. Alt schuler and A. A. Oliner. Discont inuit ies in t he Cent er Conduct or of
Symmet r ic St r ip Tr ansmission Line, IEEE Transactions on Microwave Theory
and Techniques, Vol. MTT-8, May, 1960. (Cf. Sect ion III-H.)
6. M. Kir schning, R. H. J ansen, and N. H. L. Kost er. Measur ement and
Comput er-Aided Modeling of Micr ost r ip Discont inuit ies by an Impr oved
4-9
Resonat or Met hod, 1983 IEEE MTT-S International Microwave S ymposium
Digest, May 1983, pp. 495-497.
7. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, 1951, pp. 337-350.
8. A. Oliner, Equivalent Cir cuit s For Discont inuit ies in Balanced St r ip
Tr ansmission Line, IRE Trans. on Microwave Theory and Techniques, Vol.
MTT-3, Mar ch 1955, pp. 134-143.
4-10
Stripline Components
SCLIN (Edge-Coupled Lines in Stripline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
S = spacing bet ween lines, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout opt ion) widt h of line t hat connect s t o pin 1
W2 = (for Layout opt ion) widt h of line t hat connect s t o pin 2
W3 = (for Layout opt ion) widt h of line t hat connect s t o pin 3
W4 = (for Layout opt ion) widt h of line t hat connect s t o pin 4
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
S > 0
W 0.35 B (for T > 0)
4-11
W > 0 (for T = 0)
T < 0.1 B
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model is as follows. For cent er ed
coupled-st r ipline of negligible t hickness (T=0), t he even- and odd-mode
char act er ist ic line impedances ar e calculat ed fr om t he exact for mula der ived by
Cohn using confor mal mapping. For a cent er ed coupled-st r ipline of nit e
t hickness, Cohns appr oximat e for mula is used in conjunct ion wit h Wheeler s
at t enuat ion for mula. The at t enuat ion for mula pr ovides a smoot h t r ansit ion
fr om dc r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic
loss is also included in t he model.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
4. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h t he
inner edges of t he conduct or st r ips. If t he connect ing t r ansmission lines ar e
nar r ower t han t he coupled lines, t hey will be cent er ed on t he conduct or st r ips.
5. H. M. Alt schuler and A. A. Oliner. Discont inuit ies in t he Cent er Conduct or of
Symmet r ic St r ip Tr ansmission Line, IEEE Transactions on Microwave Theory
and Techniques, Vol. MTT-8, May, 1960. (Cf. Sect ion III-H.)
6. S. B. Cohn. Shielded Coupled-St r ip Tr ansmission Line, IRE Tr ans. Micr owave
Theor y and Techniques, Vol. MTT-3, Oct ober, 1955, pp. 29-38.
7. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, Inc., 1981.
8. H. A. Wheeler. For mulas for t he Skin Effect , Pr oc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
4-12
Stripline Components
SCROS (Stripline Cross Junction)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
W3 = conduct or widt h at pin 3, in specied unit s
W4 = conduct or widt h at pin 4, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
Simulat ion fr equency (GHz)
wher e
Zo = char act er ist ic impedance of t he widest st r ip in ohms
B = gr ound plane spacing in millimet er s
Z o
B
-------
4-13
Notes/Equations/References
1. The fr equency-domain analyt ical model is a fr equency dependent , lumped
component model developed for Agilent by William J. Get singer. The model is
an ext ension of t he st r ipline T-junct ion model. The T-junct ion model is based on
t he waveguide E-plane par allel-plat e model analyzed by J. Schwinger and
published in Mar cuvit z's book, Waveguide Handbook. Based on t he wor k of
Oliner, t he waveguide model is t r ansfor med int o it s dual st r ipline model.
Conduct or and dielect r ic losses ar e not included in t he simulat ion.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
4. In Layout , all pins ar e cent er ed at t he cor r esponding edges.
5. N. Mar cuvit z. Waveguide Handbook, McGr aw-Hill, 1951, pp. 337-350.
6. A. Oliner. Equivalent Cir cuit s For Discont inuit ies in Balanced St r ip
Tr ansmission Line, IRE Trans. on Microwave Theory and Techniques, Vol.
MTT-3, Mar ch 1955, pp. 134-143.
Equivalent Circuit
4-14
Stripline Components
SCURVE (Curved Line in Stripline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = conduct or widt h, in specied unit s
Angle = angle subt ended by t he bend, in degr ees
Radius = r adius (measur ed t o st r ip cent er line), in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
RAD
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
Radius
Angle
W B 2 +
2
-----------------------
4-15
Notes/Equations/References
1. The fr equency-domain analyt ical model consist s of an equivalent piece of
st r aight st r ipline. The model was developed for Agilent by William J. Get singer
and is based on t he waveguide E-plane par allel-plat e model analyzed by J.
Schwinger and published in Mar cuvit z's book, Waveguide Handbook. Following
t he wor k of Oliner, t he waveguide model is t r ansfor med int o it s dual st r ipline
model. Conduct or and dielect r ic losses ar e included in t he simulat ion.
Discont inuit y effect s account ed for ar e t hose due t o r adius only.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
4. In layout , a posit ive value for Angle dr aws a cur ve in t he count er clockwise
dir ect ion; a negat ive value dr aws a cur ve in t he clockwise dir ect ion.
5. N. Mar cuvit z. Waveguide Handbook, McGr aw-Hill, 1951, pp. 337-350.
6. A. Oliner. Equivalent Cir cuit s For Discont inuit ies in Balanced St r ip
Tr ansmission Line, IRE Trans. on Microwave Theory and Techniques, Vol.
MTT-3, Mar ch 1955, pp. 134-143.
4-16
Stripline Components
SLEF (Stripline Open End Effect)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.15
< 0.1
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model consist s of an ext ension t o t he lengt h of
t he st r ipline st ub. The st r ipline is modeled using t he SLIN model for t hin (T=0)
and t hick (T>0) st r ipline, including conduct or and dielect r ic loss. The lengt h of
W
B
-----
T
B
----
4-17
t he ext ension of t he st r ipline, dl, is based on t he for mula developed by
Alt schuler and Oliner.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
4. H. M. Alt schuler, and A. A. Oliner, Discont inuit ies in t he Cent er Conduct or of
Symmet r ic St r ip Tr ansmission Line, IRE Trans. Microwave Theory and
Techniques, Vol. MTT-8, May 1960, pp. 328-339.
5. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, Inc., 1981.
Equivalent Circuit
Z
0
Z
0
dl l
4-18
Stripline Components
SLIN (Stripline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
W > 0 (for T = 0)
W 0.35 B (for T > 0)
T 0.25 B
S > 0.9 B
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model is as follows. For cent er ed st r ipline of
negligible t hickness (T=0), t he char act er ist ic line impedance is calculat ed fr om
t he exact for mula der ived by Cohn using confor mal mapping. For a cent er ed
st r ipline of nit e t hickness, Wheeler 's appr oximat e for mula for t he
4-19
char act er ist ic line impedance and at t enuat ion fact or ar e used. The at t enuat ion
for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o r esist ance due t o
skin effect at high fr equencies. Dielect r ic loss is also included in t he model.
2. For offset st r ipline, a model developed by William Get singer for Agilent and
based on t he for mula of Shelt on, Cohn and Wheeler is used. For an offset
st r ipline of negligible t hickness (T=0), t he char act er ist ic line impedance is
calculat ed fr om t he exact for mula der ived by Shelt on using confor mal mapping.
For an offset st r ipline of nit e t hickness, Shelt on's exact for mula is combined
wit h Cohn's for mula for a cent er ed t hick st r ipline t o for mulat e an appr oximat e
for mula. Addit ionally, t he at t enuat ion for mula developed by Wheeler is used.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is also included
in t he model.
3. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for simulat ion and layout
pur poses. A r efer ence t o SSUBO wit h it s spacing par amet er S=0 is equivalent
t o a r efer ence t o t he SSUB.
4. S. B. Cohn, Char act er ist ic Impedance of t he Shielded-St r ip Tr ansmission
Line, IRE Trans. Microwave Theory and Techniques, Vol. MTT-2, J uly, 1954, pp.
52-55.
5. S. B., Cohn, Pr oblems in St r ip Tr ansmission Lines, IRE Trans. Microwave
Theory and Techniques, Vol. MTT-3, Mar ch, 1955, pp. 119-126.
6. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, Inc., 1981.
7. J. P. Shelt on, Impedance of Offset Par allel-Coupled St r ip Tr ansmission Lines,
IEEE Trans. Microwave Theory and Techniques, Vol. MTT-14, J anuar y, 1966,
pp. 7-15.
8. H. A. Wheeler, Tr ansmission Line Pr oper t ies of a St r ipline Bet ween Par allel
Planes, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-26,
November, 1978, pp. 866-876.
9. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
4-20
Stripline Components
SLINO (Offset Strip Transmission Line)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
S = middle dielect r ic layer t hickness, in specied unit s; see Not es 1 and 2.
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.35
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model is as follows. For offset st r ipline, a
model developed by William Get singer for negligible t hickness (T=0), t he
S-dimension region is centered
between the ground planes
W
B S T +
-------------------------
4-21
char act er ist ic line impedance is calculat ed fr om t he exact and based on t he
for mula of Shelt on, Cohn and Wheeler is used. For an offset st r ipline of
negligible t hickness (T=0), t he char act er ist ic line impedance is calculat ed fr om
t he exact for mula der ived by Shelt on using confor mal mapping. For an offset
st r ipline of nit e t hickness, Shelt on's exact for mula is combined wit h Cohn's
for mula for a cent er ed t hick st r ipline t o for mulat e an appr oximat e for mula.
Addit ionally, t he at t enuat ion for mula developed by Wheeler is used. The
at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is also included
in t he model.
2. Component s t hat r efer t o an SSUBO wit h S=0 give t he same simulat ion r esult s
as if t hey r efer t o an ot her wise equivalent SSUB.
3. If t he Subst par amet er r efer s t o an SSUBO, t he SSUBO spacing par amet er (S)
value is used r at her t han t he component spacing par amet er (S). This is t r ue
r egar dless of whet her t he component s S is set t o a r eal value or t o unspecied.
If it is set t o a r eal value, a war ning message is displayed. If t he Subst
par amet er r efer s t o an SSUB (r at her t han t o an SSUBO), t he component s
value for S is used.
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. S. B. Cohn, Char act er ist ic Impedance of t he Shielded-St r ip Tr ansmission
Line, IRE Trans. Microwave Theory and Techniques, Vol. MTT-2, J uly, 1954, pp.
52-55.
6. S. B. Cohn, Pr oblems in St r ip Tr ansmission Lines, IRE Trans. Microwave
Theory and Techniques, Vol. MTT-3, Mar ch, 1955, pp. 119-126.
7. J. P. Shelt on, Impedance of Offset Par allel-Coupled St r ip Tr ansmission Lines,
IEEE Trans. Microwave Theory and Techniques, Vol. MTT-14, J anuar y, 1966,
pp. 7-15.
8. H. A. Wheeler, Tr ansmission Line Pr oper t ies of a St r ipline Bet ween Par allel
Planes, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-26,
November, 1978, pp. 866-876.
9. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
4-22
Stripline Components
SLOC (Stripline Open-Circuited Stub)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W= line widt h, in specied unit s
L = line lengt h, in specied unit s
Temp = (physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.25
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model is as follows. For cent er ed st r ipline of
negligible t hickness (T=0), t he char act er ist ic line impedance is calculat ed fr om
T
B
----
4-23
t he exact for mula der ived by Cohn using confor mal mapping. For a cent er ed
st r ipline of nit e t hickness, Wheeler 's appr oximat e for mula for t he
char act er ist ic line impedance and at t enuat ion fact or ar e used. The at t enuat ion
for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o r esist ance due t o
skin effect at high fr equencies. Dielect r ic loss is also included in t he model.
2. For offset st r ipline, a model developed by William Get singer for Agilent and
based on t he for mula of Shelt on, Cohn and Wheeler is used. For an offset
st r ipline of negligible t hickness (T=0), t he char act er ist ic line impedance is
calculat ed fr om t he exact for mula der ived by Shelt on using confor mal mapping.
For an offset st r ipline of nit e t hickness, Shelt on's exact for mula is combined
wit h Cohns for mula for a cent er ed t hick st r ipline t o for mulat e an appr oximat e
for mula. Addit ionally, t he at t enuat ion for mula developed by Wheeler is used.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is also included
in t he model. No end effect s ar e included in t he model.
3. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for simulat ion and layout
pur poses. A r efer ence t o SSUBO wit h it s spacing par amet er S=0 is equivalent
t o a r efer ence t o SSUB.
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. S. B. Cohn, Char act er ist ic Impedance of t he Shielded-St r ip Tr ansmission
Line, IRE Trans. Microwave Theory and Techniques, Vol. MTT-2, J uly, 1954, pp.
52-55.
6. S. B. Cohn, Pr oblems in St r ip Tr ansmission Lines, IRE Trans. Microwave
Theory and Techniques, Vol. MTT-3, Mar ch, 1955, pp. 119-126.
7. K. C.Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, Inc., 1981.
8. J. P. Shelt on, Impedance of Offset Par allel-Coupled St r ip Tr ansmission Lines,
IEEE Trans. Microwave Theory and Techniques, Vol. MTT-14, J anuar y, 1966,
pp. 7-15.
9. H. A. Wheeler, Tr ansmission Line Pr oper t ies of a St r ipline Bet ween Par allel
Planes, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-26,
November, 1978, pp. 866-876.
10. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
4-24
Stripline Components
SLSC (Stripline Short-Circuited Stub)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.25
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
T = conduct or t hickness (fr om associat ed SSUB)
Notes/Equations/References
1. For cent er ed st r ipline of negligible t hickness (T = 0), t he char act er ist ic line
impedance is calculat ed fr om t he exact for mula der ived by Cohn using
confor mal mapping. For a cent er ed st r ipline of nit e t hickness, Wheeler 's
T
B
----
4-25
appr oximat e for mula for t he char act er ist ic line impedance and at t enuat ion
fact or ar e used. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
2. For offset st r ipline, a model developed by William Get singer for Agilent and
based on t he for mula of Shelt on, Cohn and Wheeler is used. For an offset
st r ipline of negligible t hickness (T=0), t he char act er ist ic line impedance is
calculat ed fr om t he exact for mula der ived by Shelt on using confor mal mapping.
For an offset st r ipline of nit e t hickness, Shelt on's exact for mula is combined
wit h Cohn's for mula for a cent er ed t hick st r ipline t o for mulat e an appr oximat e
for mula. Addit ionally, t he at t enuat ion for mula developed by Wheeler is used.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is also included
in t he model. No end effect s ar e included in t he model.
3. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for simulat ion and layout
pur poses. A r efer ence t o SSUBO wit h it s spacing par amet er S=0 is equivalent
t o a r efer ence t o SSUB.
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. S. B. Cohn, Char act er ist ic Impedance of t he Shielded-St r ip Tr ansmission
Line, IRE Tr ans. Micr owave Theor y and Techniques, Vol. MTT-2, J uly, 1954,
pp. 52-55.
6. S. B. Cohn, Pr oblems in St r ip Tr ansmission Lines, IRE Tr ans. Micr owave
Theor y and Techniques, Vol. MTT-3, Mar ch, 1955, pp. 119-126.
7. K. C. Gupt a, R. Gar g, and R. Chadha. Computer-Aided Design of Microwave
Circuits, Ar t ech House, Inc., 1981.
8. J. P. Shelt on, Impedance of Offset Par allel-Coupled St r ip Tr ansmission Lines,
IEEE Trans. Microwave Theory and Techniques, Vol. MTT-14, J anuar y, 1966,
pp. 7-15.
9. H. A. Wheeler, Tr ansmission Line Pr oper t ies of a St r ipline Bet ween Par allel
Planes, IEEE Trans. Microwave Theory and Techniques, Vol. MTT-26,
November, 1978, pp. 866-876.
10. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
4-26
Stripline Components
SMITER (90-degree Stripline Bend -- Optimally Mitered)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = conduct or widt h, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.2 B W 3 B
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain model is an empir ically based, analyt ical model. The
chamfer ed bend is modeled as a mat ched st r ipline line of lengt h, l
o
+l
ext
. The
effect ive lengt h of t he bend and t he opt imal chamfer ed dimension ar e
calculat ed based on cur ve t s t o empir ical dat a in Mat t haei, Young, and J ones.
The st r ipline is modeled using t he SLIN model for t hin (T=0) and t hick (T>0)
st r ipline, including conduct or and dielect r ic loss.
a
a
4-27
For l
o
:
If (W/B 0.2)
l
o
= 0.56528 + 0.023434 (W/B 0.2)
If (0.2 < W/B 3.0)
l
o
= 0.56528 + 0.01369 (W/B 0.2)
0.77684
+ 0.01443 (W/B 0.2)
2.42053
If (W/B > 3.0)
l
o
= 0.770175 + 0.155473 (W/B 3.0)
For l
ext
:
If (a > W)
l
ext
= 2 (a W)
If (a W)
l
ext
= 0.0
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. The ar t wor k is dependent on t he par amet er s given in t he SSUB or SSUBO.
Layout ar t wor k r equir es placing a SSUB or SSUBO, pr ior t o placing t he
component dir ect ly in t he Layout window.
4. The mit er fr act ion (a/W) is calculat ed using one of t he for mulae given below
depending on t he par amet er values.
If (W/B < 0.2), a/W = 1.267472 0.35041 (W/B 0.2).
If (0.2 W/B 1.6),
a/W = 1.012 + (1.6 W/B) (0.08 + (1.6 - W/B)
(0.013 + ((1.6 - W/B) 0.043))).
If (1.6 W/B 14.25), a/W = 0.884 + 0.08 (3.2 W/B).
5. Har lan Howe, J r, S tripline Circuit Design, Ar t ech House, Inc., 1982.
4-28
Stripline Components
6. G. Mat t haei, L. Young, E. M. T. J ones. Microwave Filters, Impedance-Matching
Networks and Coupling S tructures, Ar t ech House, Inc., 1980, pp 203, 206.
Equivalent Circuit
Z
0
(W,B,ER)
l
o
+ l
ext
4-29
SOCLIN (Offset-Coupled Lines in Stripline)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = conduct or widt h, in specied unit s
WO = conduct or offset , in specied unit s
S = conduct or spacing, in specied unit s
L = conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
W1 = (for Layout opt ion) offset fr om pin 1 t o conduct or cent er line
W2 = (for Layout opt ion) offset fr om pin 2 t o conduct or cent er line
W3 = (for Layout opt ion) offset fr om pin 3 t o conduct or cent er line
W4 = (for Layout opt ion) offset fr om pin 4 t o conduct or cent er line4
P1Layer = (for Layout opt ion) layer associat ed wit h pin 1 conduct or : cond1, cond2
4-30
Stripline Components
Range of Usage
Er 1
0.35
0.9
wher e
B = gr ound plane spacing (fr om associat ed SSUB)
Er = dielect r ic const ant (fr om associat ed SSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model is as follows. For lat er ally-offset
coupled-st r ipline of negligible t hickness (T=0), t he even- and odd-mode
char act er ist ic line impedances ar e calculat ed fr om t he exact for mula der ived by
Shelt on using confor mal mapping. For a lat er ally-offset coupled-st r ipline of
nit e t hickness, a model developed by William Get singer for Agilent and based
on t he for mula of Shelt on, Cohn and Wheeler is used t o calculat e t he even- and
odd-mode impedances. Addit ionally, t he at t enuat ion for mula developed by
Wheeler is used. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc
r esist ance t o r esist ance due t o skin effect at high fr equencies. Dielect r ic loss is
also included in t he model.
2. Coupled lines ar e par allel t o t he gr ound plane.
3. Component s t hat r efer t o an SSUBO wit h S=0 give t he same simulat ion r esult s
as if t hey r efer t o an ot her wise equivalent SSUB.
4. If t he Subst par amet er r efer s t o an SSUBO, t he SSUBO spacing par amet er (S)
value is used r at her t han t he component spacing par amet er (S). This is t r ue
r egar dless of whet her t he component s S is set t o a r eal value or t o unspecied.
If it is set t o a r eal value, a war ning message is displayed. If t he Subst
par amet er r efer s t o an SSUB (r at her t han t o an SSUBO), t he component s
value for S is used.
5. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
6. W1, W2, W3 and W4 ar e layout -only par amet er s and only affect t he
elect r omagnet ic simulat ion r esult s. W1, W2, W3 and W4 cannot exceed W/2.
W
B S
------------
S
B
----
4-31
7. S. B. Cohn, Thickness Cor r ect ions for Capacit ive Obst acles and St r ip
Conduct or s, IRE Trans. Microwave Theory and Techniques, Vol. MTT-8,
November, 1960, pp. 638-644.
8. J. Paul Shelt on, J r. Impedances of Offset Par allel-Coupled St r ip Tr ansmission
Lines, IEEE Transactions On Microwave Theory and Techniques, Vol. MTT-14,
J anuar y, 1966, pp. 7-15.
9. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424
4-32
Stripline Components
SSTEP (Stripline Step in Width)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.1
10
W1 0.2
W2 = 0.2
wher e
= wave lengt h in t he dielect r ic
Notes/Equations/References
1. The fr equency-domain analyt ical model is t he lumped component model of
Alt schuler and Oliner. The model includes r efer ence plane adjust ment s t o align
t he natural r efer ence plane of t he discont inuit y wit h t he r efer ence plane of t he
layout . The SLIN st r ipline model is used t o model t hese r efer ence plane shift s.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
W 2
W 1
---------
4-33
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. In layout , SSTEP aligns t he cent er lines of t he st r ips.
4. H. M. Alt schuler and A. A. Oliner. Discont inuit ies in t he Cent er Conduct or of
Symmet r ic St r ip Tr ansmission Line, IEEE Transactions on Microwave Theory
and Techniques, Vol. MTT-8, May 1960. (Cf. Sect ion III-H.)
Equivalent Circuit
L
Z
2
Z
1
l
2
l
1
4-34
Stripline Components
SSUB (Stripline Substrate)
Symbol
Illustration
Parameters
Er = r elat ive dielect r ic const ant
Mur = r elat ive per meabilit y
B = gr ound plane spacing, in specied unit s
T = conduct or t hickness, in specied unit s
Cond = conduct or conduct ivit y, in Siemen/met er
TanD = dielect r ic loss t angent
Cond 1 (for Layout Opt ion) layer t o which cond is mapped; default = 1 (cond)
Cond2 (for Layout Opt ion) layer t o which cond2 is mapped; default = 2 (cond2)
Range of Usage
Er 1.0
B > 0
T 0
Notes/Equations/References
1. SSUB set s up st r ipline subst r at e par amet er s for one or mor e st r ipline
component s. Eit her an SSUB or SSUBO is r equir ed for all st r ipline
component s. For offset cent er conduct or layer s, use SSUBO.
Er
4-35
2. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
3. The par amet er s Cond1 and Cond2 cont r ol t he mask layer s on which t he
conduct or s ar e dr awn. These ar e layout -only par amet er s and ar e not used by
t he simulat or.
In t he case of SBCLIN and SOCLIN, t he component par amet er P1Layer
ident ies t he vir t ual layer (cond1 or cond2) t hat t he conduct or associat ed wit h
pin 1 is dr awn on. All ot her st r ipline component s have a Layer par amet er t hat
ident ies t he vir t ual layer (cond1 or cond2) on which t he conduct or is dr awn.
The vir t ual layer r efer r ed t o by P1Layer or Layer (cond1 or cond2) is mapped t o
an act ual mask layer by t he Cond1 or Cond2 par amet er of t he appr opr iat e
SSUB or SSUBO.
4-36
Stripline Components
SSUBO (Offset Stripline Substrate)
Symbol
Illustration
Parameters
Er = r elat ive dielect r ic const ant
Mur = r elat ive per meabilit y
S = int er-layer (conduct or ) spacing, in specied unit s
B = gr ound plane spacing, in specied unit s
T = conduct or t hickness, in specied unit s
Cond = conduct or conduct ivit y
TanD =dielect r ic loss t angent
Cond1 = (for Layout Opt ion) layer t o which cond1 is mapped; default = 1 (cond)
Cond2=(for Layout Opt ion) layer t o which cond2 is mapped; default = 2 (cond2)
Range of Usage
Er 1.0
S 0
B > 0
T 0
S > 0.9 B
Notes/Equations/References
1. This it em species st r ipline subst r at e wit h t wo conduct or layer s locat ed
symmet r ically bet ween gr ound planes. It can also be used for specifying
B
Dielectric (Er)
Upper conductor layer
Bottom conductor layer
T
S
4-37
st r ipline subst r at e wit h an offset cent er conduct or layer. The only differ ence
bet ween SSUB and SSUBO is t hat spacing par amet er S is added t o SSUBO t o
suppor t t he offset conduct or. SSUBO wit h S=0 is t he same as SSUB.
2. A st r ipline Subst par amet er can eit her r efer t o an SSUB or an SSUBO. Fr om a
simulat ion viewpoint , r efer ence t o SSUBO is meaningful only for t he SBCLIN,
SOCLIN, SLINO, SLIN, SLOC, SLEF, and SLSC, because t he int r insic models
for t hese component s suppor t offset conduct or congur at ion. For all ot her
st r ipline component s, a r efer ence t o SSUBO is effect ively t he same as a
r efer ence t o SSUB because t he spacing par amet er of SSUBO is ignor ed.
3. An SSUBO or an SSUB is r equir ed for all st r ipline component s.
4. Cond1 and Cond2 cont r ol t he mask layer s on which t he conduct or s ar e dr awn.
These ar e layout -only par amet er s and ar e not used by t he simulat or.
5. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
6. In t he case of SBCLIN and SOCLIN, t he par amet er P1Layer ident ies t he
vir t ual layer (cond1 or cond2) t hat t he conduct or associat ed wit h pin 1 is dr awn
on. All ot her st r ipline component s have a Layer par amet er t hat ident ies t he
vir t ual layer (cond1 or cond2) on which t he conduct or is dr awn.
7. The vir t ual layer r efer r ed t o by P1Layer or Layer (cond1 or cond2) is mapped t o
an act ual mask layer by t he Cond1 or Cond2 par amet er of t he appr opr iat e
SSUB or SSUBO.
4-38
Stripline Components
STEE (Stripline T-Junction)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W1 = conduct or widt h at pin 1, in specied unit s
W2 = conduct or widt h at pin 2, in specied unit s
W3 = conduct or widt h at pin 3, in specied unit s
Temp = physical t emper at ur e, in C
Layer = (for Layout opt ion) conduct or layer number : cond1, cond2
Range of Usage
0.1 Z
01
/ Z
03
2.0
wher e
Z
01
= char act er ist ic impedance of line connect ed t o pin 1
Z
03
= char act er ist ic impedance of line connect ed t o pin 3
Notes/Equations/References
1. The fr equency-domain analyt ical model is a fr equency dependent , lumped
component model developed for Agilent by William J. Get singer. The model is
4-39
based on t he waveguide E-plane par allel-plat e model analyzed by J. Schwinger
and published in Mar cuvit z's book, Waveguide Handbook. Based on t he wor k of
Oliner, t he waveguide model is t r ansfor med int o it s dual st r ipline model.
Conduct or and dielect r ic losses ar e not included in t he simulat ion.
2. If t he Subst par amet er r efer s t o an SSUBO whose spacing par amet er S has a
non-zer o value, t he component is consider ed offset for layout and
elect r omagnet ic analysis pur poses. For ot her t ypes of analyses, t he offset is
ignor ed.
3. Model assumes W1 = W2. If W1 W2, t hen t he widt h is calculat ed as
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. N. Mar cuvit z, Waveguide Handbook, McGr aw-Hill, 1951, pp. 337-350.
6. A. Oliner, Equivalent Cir cuit s For Discont inuit ies in Balanced St r ip
Tr ansmission Line, IRE Trans. on Microwave Theory and Techniques, Vol.
MTT-3, Mar ch 1955, pp. 134-143.
Equivalent Circuit
W
1
W
2
( )
4-40
Stripline Components
5-1
Chapter 5: Suspended Substrate
Components
5-2 SSCLIN (Suspended Substrate Coupled Lines)
Suspended Substrate Components
SSCLIN (Suspended Substrate Coupled Lines)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
S = line spacing, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e
W1 = (for Layout opt ion) widt h of line t hat connect s t o pin 1
W2 = (for Layout opt ion) widt h of line t hat connect s t o pin 2
W3 = (for Layout opt ion) widt h of line t hat connect s t o pin 3
W4 = (for Layout opt ion) widt h of line t hat connect s t o pin 4
Range of Usage
Er 1.3
Hu H
Hl 100 H
H
100
---------
SSCLIN (Suspended Substrate Coupled Lines) 5-3
W 50 H
S 10 H
wher e
Er = dielect r ic const ant (fr om SSSUB)
H = subst r at e t hickness (fr om SSSUB)
Hl = lower gr ound plane t o subst r at e spacing (fr om SSSUB)
Hu = upper gr ound plane t o subst r at e spacing (fr om SSSUB)
Range of Usage:
1. The fr equency-domain analyt ical model is a non-disper sive st at ic and lossless
model. Conduct or t hickness is ignor ed.
2. In gener at ing a layout , adjacent t r ansmission lines will be lined up wit h t he
inner edges of t he conduct or st r ips. If t he connect ing t r ansmission lines ar e
nar r ower t han t he coupled lines, t hey will be cent er ed on t he conduct or st r ips.
3. W1, W2, W3 and W4 ar e layout -only par amet er s and do not affect t he
simulat ion r esult s.
4. J ohn I. Smit h, The Even- and Odd-Mode Capacit ance Par amet er s for Coupled
Lines in Suspended Subst r at e, IEEE Trans. Microwave Theory and Techniques,
Vol. MTT-19, May 1971, pp. 424-431.
H
50
------
H
10
------
5-4 SSLIN (Suspended Substrate Line)
Suspended Substrate Components
SSLIN (Suspended Substrate Line)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = line widt h, in specied unit s
L = line lengt h, in specied unit s
Temp = physical t emper at ur e
Range of Usage
Er 1.3
Hu H
Hl 100 H
W 50 H
wher e
Er = dielect r ic const ant (fr om SSSUB)
H = subst r at e t hickness (fr om SSSUB)
Hl = lower gr ound plane t o subst r at e spacing (fr om SSSUB)
Hu = upper gr ound plane t o subst r at e spacing (fr om SSSUB)
Range of Usage:
1. The fr equency-domain analyt ical model is a non-disper sive st at ic and lossless
model. Conduct or t hickness is ignor ed.
H
100
---------
H
50
------
SSLIN (Suspended Substrate Line) 5-5
2. J ohn I. Smit h, The Even- and Odd-Mode Capacit ance Par amet er s for Coupled
Lines in Suspended Subst r at e, IEEE Trans. Microwave Theory and Techniques,
Vol. MTT-19, May 1971, pp. 424-431.
5-6 SSSUB (Suspended Substrate)
Suspended Substrate Components
SSSUB (Suspended Substrate)
Symbol
Illustration
Parameters
None
Range of Usage
Er 1.3
Hu H
0.01 H Hl 100 H
Notes/Equations/References
1. SSSUB set s up subst r at e par amet er s for suspended subst r at e component s and
is r equir ed for all suspended subst r at es.
2. Cond1 cont r ols t he layer on which t he Mask layer is dr awn; it is a layout -only
par amet er and is not used by t he simulat or.
6-1
Chapter 6: Transmission Line Components
6-2
Transmission Line Components
CLIN (Ideal Coupled Transmission Lines)
Symbol
Parameters
Ze = even-mode char act er ist ic impedance, in ohms
Zo = odd-mode char act er ist ic impedance, in ohms
E = elect r ical lengt h, in degr ees
F = r efer ence fr equency for elect r ical lengt h, in her t z
Range of Usage
Notes/Equations/References
1. Odd- and even-mode phase velocit ies ar e assumed equal.
2. This component has no default ar t wor k associat ed wit h it .
Ze > 0 Ze > Zo Zo > 0
E 0
F > 0
6-3
CLINP (Lossy Coupled Transmission Lines)
Symbol
Parameters
Ze = even-mode char act er ist ic impedance, in ohms
Zo = odd-mode char act er ist ic impedance, in ohms
L = physical lengt h, in specied unit s
Ke = even-mode effect ive dielect r ic const ant
Ko = odd-mode effect ive dielect r ic const ant
Ae = even-mode at t enuat ion, in dB per unit met er
Ao = odd-mode at t enuat ion, in dB per unit met er
Temp = physical t emper at ur e, in C
Range of Usage
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
Ze > 0 Ze > Zo Zo > 0
Ke > 0 Ko > 0
Ae 0 Ao 0
6-4
Transmission Line Components
COAX (Coaxial Cable)
Symbol
Illustration
Parameters
Di = diamet er of inner conduct or, in specied unit s
Do = inner diamet er of out er conduct or, in specied unit s
L = lengt h, in specied unit s
Er = dielect r ic const ant of dielect r ic bet ween inner and out er conduct or s
TanD = dielect r ic loss t angent
Rho = conduct or r esist ivit y (r elat ive t o copper )
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
Dimensions must suppor t only TEM mode.
TanD 0
Er
3
4
Do
Di
6-5
Rho 0
Er 1
Do > Di
Simulat ion fr equency <
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
2. Simon Ramo, J ohn R. Whinner y, and Theodor e Van Duzer. Fields and Waves in
Communication Electronics, J ohn Wiley and Sons, 1984, Table 5.11b,
p. 252.
190 GHz
Er Di m m ( ) Do m m ( ) + [ ]
-----------------------------------------------------------------------------
6-6
Transmission Line Components
CoaxTee (Coaxial 3-Port T-Junction, Ideal, Lossless)
Symbol
Parameters
Z = line char act er ist ic impedance, in specied unit s (value t ype: r eal, var )
L = lengt h of all T-junct ion br anches, in specied unit s (value t ype: r eal, var )
K = effect ive dielect r ic const ant (value t ype: r eal, var )
Range of Usage
Z > 0
L 0
K 1.0
Notes/Equations/References
None
6-7
RCLIN (Distributed R-C Network)
Symbol
Parameters
R = ser ies r esist ance per met er
C = shunt capacit ance per met er
L = lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
N/A
Notes/Equations/References
1. Tot al ser ies r esist ance = R L; t ot al shunt capacit ance = C L
2. This component has no default ar t wor k associat ed wit h it .
Equivalent Circuit
For t r ansient analysis, a simplied lumped model is used, as shown below.
6-8
Transmission Line Components
TLIN (Ideal 2-Terminal Transmission Line)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
E = elect r ical lengt h, in degr ees
F = r efer ence fr equency for elect r ical lengt h, in her t z
Range of Usage
Z 0
F 0
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
6-9
TLIN4 (Ideal 4-Terminal Transmission Line)
Symbol
Parameters
Z = char act er ist ic impedance, in ohms
E = elect r ical lengt h, in degr ees
F = r efer ence fr equency for elect r ical lengt h, in her t z
Range of Usage
Z 0
F 0
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
6-10
Transmission Line Components
TLINP (2-Terminal Physical Transmission Line)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
L = physical lengt h, in specied unit s
K = effect ive dielect r ic const ant
A = at t enuat ion, in dB per unit met er
F = fr equency for scaling at t enuat ion, in her t z
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
Z > 0 K 1 A 0 F 0
Notes/Equations/References
1. The A par amet er species conduct or loss only. To specify dielect r ic loss, specify
non-zer o value for TanD (t o specify a fr equency-dependent dielect r ic loss) or
Sigma (t o specify a const ant dielect r ic loss).
2. Because conduct or and dielect r ic losses can be specied separ at ely, t he
component is not assumed t o be dist or t ionless. Ther efor e, t he act ual
char act er ist ic impedance of t he line may be complex and fr equency-dependent .
6-11
This may cause r eect ions in your cir cuit t hat would not occur if a
dist or t ionless appr oximat ion wer e made.
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
wher e
f = simulat ion fr equency
F = r efer ence fr equency
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. This component has no default ar t wor k associat ed wit h it .
f
F
----
6-12
Transmission Line Components
TLINP4 (4-Terminal Physical Transmission Line)
Symbol
Parameters
Z = char act er ist ic impedance, in ohms
L = physical lengt h, in specied unit s
K = effect ive dielect r ic const ant
A = at t enuat ion, in dB per unit met er
F = fr equency for scaling at t enuat ion, in her t z
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
Z > 0 K 1 A 0 F 0
Notes/Equations/References
1. The A par amet er species conduct or loss only. To specify dielect r ic loss, specify
non-zer o value for TanD (t o specify a fr equency-dependent dielect r ic loss) or
Sigma (t o specify a const ant dielect r ic loss).
2. Since conduct or and dielect r ic losses can be specied separ at ely, t he component
is not assumed t o be dist or t ionless. Ther efor e, t he act ual char act er ist ic
impedance of t he line may be complex and fr equency-dependent . This may
cause r eect ions in your cir cuit t hat would not occur if a dist or t ionless
appr oximat ion wer e made.
3. A(f) = A (for F = 0)
6-13
A(f) = A(F) (for F 0)
wher e
f = simulat ion fr equency
F = r efer ence fr equency
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. This component has no default ar t wor k associat ed wit h it .
f
F
----
6-14
Transmission Line Components
TLOC (Ideal Transmission Line Open-Circuited Stub)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
E = elect r ical lengt h, in degr ees
F = r efer ence fr equency for elect r ical lengt h, in her t z
Range of Usage
Z 0
F 0
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
2. Por t 2 should be connect ed t o t he syst em gr ound r efer ence.
6-15
TLPOC (Physical Transmission Line Open-Circuited Stub)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
L = physical lengt h, in specied unit s
K = effect ive dielect r ic const ant
A = at t enuat ion, in dB per unit met er
F = fr equency for scaling at t enuat ion, in her t z
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
Z > 0 K 1 A 0 F 0
Notes/Equations/References
1. The A par amet er species conduct or loss only. To specify dielect r ic loss, specify
non-zer o value for TanD (t o specify a fr equency-dependent dielect r ic loss) or
Sigma (t o specify a const ant dielect r ic loss).
2. Since conduct or and dielect r ic losses can be specied separ at ely, t he component
is not assumed t o be dist or t ionless. Ther efor e, t he act ual char act er ist ic
6-16
Transmission Line Components
impedance of t he line may be complex and fr equency-dependent . This may
cause r eect ions in your cir cuit t hat would not occur if a dist or t ionless
appr oximat ion wer e made.
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
wher e
f = simulat ion fr equency
F = r efer ence fr equency
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. This component has no default ar t wor k associat ed wit h it .
f
F
----
6-17
TLPSC (Physical Transmission Line Short-Circuited Stub)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
L = physical lengt h, in specied unit s
K = effect ive dielect r ic const ant
A = at t enuat ion, in dB per unit met er
F = fr equency for scaling at t enuat ion, in her t z
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
Z > 0 K 1 A 0 F 0
Notes/Equations/References
1. The A par amet er species conduct or loss only. To specify dielect r ic loss, specify
non-zer o value for TanD (t o specify a fr equency-dependent dielect r ic loss) or
Sigma (t o specify a const ant dielect r ic loss).
6-18
Transmission Line Components
2. Because conduct or and dielect r ic losses can be specied separ at ely, t he
component is not assumed t o be dist or t ionless. Ther efor e, t he act ual
char act er ist ic impedance of t he line may be complex and fr equency-dependent .
This may cause r eect ions in your cir cuit t hat would not occur if a
dist or t ionless appr oximat ion wer e made.
3. A(f) = A (for F = 0)
A(f) = A(F) (for F 0)
wher e
f = simulat ion fr equency
F = r efer ence fr equency
4. For t ime-domain analysis, t he fr equency-domain analyt ical model is used.
5. This component has no default ar t wor k associat ed wit h it .
f
F
----
6-19
TLSC (Ideal Transmission Line Short-Circuited Stub)
Symbol
Illustration
Parameters
Z = char act er ist ic impedance, in ohms
E = elect r ical lengt h, in degr ees
F = r efer ence fr equency for elect r ical lengt h, in her t z
Range of Usage
Z 0
F 0
Notes/Equations/References
1. This component has no default ar t wor k associat ed wit h it .
2. Por t 2 should be connect ed t o t he syst em gr ound r efer ence.
6-20
Transmission Line Components
7-1
Chapter 7: Waveguide Components
7-2
Waveguide Components
CPW (Coplanar Waveguide)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.125 W G 4.5 W
W + 2G 20
W > 0
G > 0
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
7-3
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses.
The t hickness cor r ect ion is based on a t echnique pr oposed by Cohn. The
conduct or losses ar e calculat ed using Wheeler s incr ement al induct ance r ule.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Disper sion at high fr equencies
is not included in t he model.
2. No lower gr ound plane is included.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
5. G. Ghione and C. Naldi. Analyt ical For mulas for Coplanar Lines in Hybr id and
Monolit hic MICs, Electronics Letters, Vol. 20, No. 4, Febr uar y 16, 1984, pp.
179-181.
6. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-4
Waveguide Components
CPWCGAP (Coplanar Waveguide, Center-Conductor Gap)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
S = gap bet ween end of cent er conduct or and gr ound plane, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
W S 1.4 W
Notes/Equations/References
1. The cent er conduct or gap in coplanar waveguide is modeled as a st at ic, lumped
component cir cuit . Mor e specically, t he net wor k is a pi-net wor k wit h
capacit ive coupling bet ween t he cent er conduct or s and fr inging capacit ance
fr om t he cent er conduct or s t o gr ound. The value of t he capacit ances ar e
calculat ed fr om for mula developed by William Get singer for Agilent . The
for mula is based on an analysis of an analogous t win-st r ip congur at ion of t he
coplanar discont inuit y as pr oposed by Get singer. Addit ionally, met allizat ion
t hickness cor r ect ion is applied.
7-5
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. Get singer, W. J., Cir cuit Duals on Planar Tr ansmission Media, IEEE MTT-S
Int'l Microwave S ymposium Digest, 1983, pp. 154-156.
Equivalent Circuit
C
p
C
p
C
g
7-6
Waveguide Components
CPWCPL2 (Coplanar Waveguide Coupler (2 Center Conductors))
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
S = gap bet ween end of cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
S > 0
Notes/Equations/References
1. The fr equency-domain analyt ical model for a 2-conduct or coupler in coplanar
waveguide was developed for Agilent by William J. Get singer and is based on a
confor mal mapping t echnique. The r esult ing for mulas for t he even and
odd-mode char act er ist ic line impedances and effect ive dielect r ic const ant s
include t he effect s of nit e conduct or t hickness, conduct or losses and dielect r ic
losses.
7-7
The t hickness cor r ect ion is based on a t echnique pr oposed by Cohn. The
conduct or losses ar e calculat ed using Wheeler 's incr ement al induct ance r ule.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Disper sion at high fr equencies
is not included in t he model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. Bast ida, E. and N. Fanelli. Int er digit al Coplanar Dir ect ional Coupler s,
Electronic Letters, Vol. 16, August 14, 1980, pp. 645-646.
4. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
5. C. P. Wen, Coplanar Waveguide Dir ect ional Coupler s, IEEE Transaction -
MTT-18, J une 1970, pp. 318-322.
6. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-8
Waveguide Components
CPWCPL4 (Coplanar Waveguide Coupler) 4 Center Conductors))
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = widt h of out er cent er conduct or s, in specied unit s
G = gap (spacing) bet ween cent er conduct or s and gr ound plane, in specied unit s
S = gap bet ween out er and inner cent er conduct or s, in specied unit s
Wi = widt h of inner cent er conduct or s, in specied unit s
Si = gap bet ween inner cent er conduct or s, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
S > 0
Wi > 0
Wi
Si
7-9
Si > 0
Notes/Equations/References
1. The fr equency-domain analyt ical model for a 4-conduct or coupler in coplanar
waveguide was developed for Agilent by William J. Get singer and is based on a
confor mal mapping t echnique. The r esult ing for mulas for t he even and
odd-mode char act er ist ic line impedances and effect ive dielect r ic const ant s
include t he effect s of nit e conduct or t hickness, conduct or losses and dielect r ic
losses.
The t hickness cor r ect ion is based on a t echnique pr oposed by Cohn. The
conduct or losses ar e calculat ed using Wheeler 's incr ement al induct ance r ule.
The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Disper sion at high fr equencies
is not included in t he model.
2. Alt er nat e cent er conduct or s ar e dir ect ly connect ed at ends of CPWCPL4
coupler.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. E. Bast ida and N. Fanelli. Int er digit al Coplanar Dir ect ional Coupler s,
Electronic Letters, Vol. 16, August 14, 1980, pp. 645-646.
5. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
6. C. P. Wen, Coplanar Waveguide Dir ect ional Coupler s, IEEE Transaction -
MTT-18, J une, 1970, pp. 318-322.
7. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-10
Waveguide Components
CPWEF (Coplanar Waveguide, Open-End Effect)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
W + 2 G 20 H
0.125 W G 4.5 W
wher e
H = subst r at e t hickness (fr om associat ed CPWSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
7-11
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses. The
t hickness cor r ect ion is based on a t echnique pr oposed by Cohn.
The conduct or losses ar e calculat ed using Wheeler 's incr ement al induct ance
r ule. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance
t o r esist ance due t o skin effect at high fr equencies. Disper sion at high
fr equencies is not included in t he model.
2. The end effect of t he abr upt ly t er minat ed line is modeled as a lumped
capacit ance t o gr ound. The value of t he capacit ance is calculat ed fr om for mula
developed by William Get singer for Agilent . The for mula is based on an
analysis of an analogous t win-st r ip congur at ion of t he coplanar discont inuit y
as pr oposed by Get singer.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
5. G. Ghione and C. Naldi, Analyt ical For mulas for Coplanar Line in Hybr id and
Monolit hic MICs, Electronics Letters, Vol. 20, No. 4, Febr uar y 16, 1984, pp.
179-181.
6. W. J. Get singer, Cir cuit Duals on Planar Tr ansmission Media, IEEE MTT-S
Int'l Microwave S ymposium Digest, 1983, pp. 154-156.
7. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-12
Waveguide Components
CPWEGAP (Coplanar Waveguide, End Gap)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
S = gap bet ween end of cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0, G > 0
W S 1.4 W
0.125 W G 4.5 W
W + 2 G 20 H
wher e
H = subst r at e t hickness (fr om associat ed CPWSUB)
7-13
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses. The
t hickness cor r ect ion is based on a t echnique pr oposed by Cohn. The conduct or
losses ar e calculat ed using Wheeler 's incr ement al induct ance r ule. The
at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Disper sion at high fr equencies
is not included in t he model.
2. The end effect of t he abr upt ly t er minat ed line is modeled as a lumped
capacit ance t o gr ound. The value of t he capacit ance is calculat ed fr om for mula
developed by William Get singer for Agilent . The for mula is based on an
analysis of an analogous t win-st r ip congur at ion of t he coplanar discont inuit y
as pr oposed by Get singer.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
5. W. J. Get singer, Cir cuit Duals on Planar Tr ansmission Media, IEEE MTT-S
Int'l Microwave S ymposium Digest, 1983, pp. 154-156.
6. G. Ghione, and C. Naldi, Analyt ical For mulas for Coplanar Line in Hybr id and
Monolit hic MICs, Electronics Letters, Vol. 20, No. 4, Febr uar y 16, 1984, pp.
179-181.
7. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-14
Waveguide Components
CPWG (Coplanar Waveguide with Lower Ground Plane)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
0.125 W G 4.5 W
W + 2 G 10 H
W > 0
G > 0
wher e
H = subst r at e t hickness
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
7-15
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses. The
t hickness cor r ect ion is based on a t echnique pr oposed by Cohn. The conduct or
losses ar e calculat ed using Wheeler 's incr ement al induct ance r ule. The
at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance t o
r esist ance due t o skin effect at high fr equencies. Disper sion at high fr equencies
is not included in t he model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. G. Ghione and C. Naldi. Par amet er s of Coplanar Waveguides wit h Lower
Common Planes, Electronics Letters, Vol. 19, No. 18, Sept ember 1, 1983,
pp. 734-735.
4. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-16
Waveguide Components
CPWOC (Coplanar Waveguide, Open-Circuited Stub)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
0.125 W G 4.5 W
W + 2 G 20 H
wher e
H = subst r at e t hickness (fr om associat ed CPWSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
7-17
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses. The
t hickness cor r ect ion is based on a t echnique pr oposed by Cohn.
The conduct or losses ar e calculat ed using Wheeler 's incr ement al induct ance
r ule. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance
t o r esist ance due t o skin effect at high fr equencies. Disper sion at high
fr equencies is not included in t he model. No end effect s ar e included in t he
model.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. S. B. Cohn, Thickness Cor r ect ions for Capacit ive Obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
4. G. Ghione and C. Naldi, Analyt ical For mulas for Coplanar Line in Hybr id and
Monolit hic MICs, Electronics Letters, Vol. 20, No. 4, Febr uar y 16, 1984, pp.
179-181.
5. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-18
Waveguide Components
CPWSC (Coplanar Waveguide, Short-Circuited Stub)
Symbol
Illustration
Parameters
Subst = subst r at e inst ance name
W = cent er conduct or widt h, in specied unit s
G = gap (spacing) bet ween cent er conduct or and gr ound plane, in specied unit s
L = cent er conduct or lengt h, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
G > 0
0.125 W G 4.5 W
W + 2 G 20 H
wher e
H = subst r at e t hickness (fr om associat ed CPWSUB)
Notes/Equations/References
1. The fr equency-domain analyt ical model for t he coplanar waveguide was
developed for Agilent by William J. Get singer and is based on a confor mal
mapping t echnique. The r esult ing for mulas for t he char act er ist ic line
7-19
impedance and effect ive dielect r ic const ant ar e vir t ually t he same as t hose
published by Ghione and Naldi. However, t he for mulas ar e ext ended t o account
for conduct or s of nit e t hickness, conduct or losses and dielect r ic losses. The
t hickness cor r ect ion is based on a t echnique pr oposed by Cohn.
The conduct or losses ar e calculat ed using Wheeler 's incr ement al induct ance
r ule. The at t enuat ion for mula pr ovides a smoot h t r ansit ion fr om dc r esist ance
t o r esist ance due t o skin effect at high fr equencies. Disper sion at high
fr equencies is not included in t he model.
2. The end effect of t he abr upt ly t er minat ed line is modeled as a lumped
induct ance t o gr ound. The value of t he induct ance is calculat ed fr om for mula
developed by William Get singer for Agilent . The for mula is based on an
analysis of an analogous t win-st r ip congur at ion of t he coplanar discont inuit y
as pr oposed by Get singer.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. S. B. Cohn, Thickness Cor r ect ions for Capacit ive obst acles and St r ip
Conduct or s, IRE Trans. on Microwave Theory and Techniques, Vol. MTT-8,
November 1960, pp. 638-644.
5. W. J. Get singer, Cir cuit Duals on Planar Tr ansmission Media, IEEE MTT-S
Int'l Microwave S ymposium Digest, 1983, pp. 154-156.
6. G. Ghione, and C. Naldi, Analyt ical For mulas for Coplanar Line in Hybr id and
Monolit hic MICs, Electronics Letters, Vol. 20, No. 4, Febr uar y 16, 1984, pp.
179-181.
7. H. A. Wheeler, For mulas for t he Skin Effect , Proc. IRE, Vol. 30, Sept ember,
1942, pp. 412-424.
7-20
Waveguide Components
CPWSUB (Coplanar Waveguide Substrate)
Symbol
Illustration
Parameters
H = subst r at e t hickness, in specied unit s
Er = r elat ive dielect r ic const ant
Mur = r elat ive per meabilit y
Cond = conduct or conduct ivit y
Hu = cover height , in specied unit s
T = conduct or t hickness, in specied unit s
TanD = dielect r ic loss t angent
Rough = conduct or sur face r oughness, in specied unit s
Cond1 = (for Layout opt ion) layer t o which Cond is mapped; default =cond
Range of Usage
H > 0
Er 1.0
T 0
Notes/Equations/References
1. CPWSUB is r equir ed for all coplanar waveguide component s.
7-21
2. The subst r at e dened by t his component does not have a lower gr ound plane.
3. Losses ar e account ed for when Rough > 0 and T > 0. The Rough par amet er
modies t he loss calculat ions.
4. Cond1 cont r ols t he layer on which t he Mask layer is dr awn; it is a Layout -only
par amet er and is not used by t he simulat or.
7-22
Waveguide Components
RWG (Rectangular Waveguide)
Symbol
Illustration
Parameters
A = inside widt h of enclosur e, in specied unit s
B = inside height of enclosur e, in specied unit s
L = waveguide lengt h, in specied unit s
Er = r elat ive dielect r ic const ant
Rho = met al r esist ivit y (r elat ive t o copper )
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
A > B
TE10 and evanescent (below cut off) modes ar e suppor t ed.
Notes/Equations/References
Er
7-23
1. The power-volt age denit ion of waveguide impedance is used in t he
fr equency-domain analyt ical model.
2. Conduct or losses can be specied using Rho or TanM or bot h. Dielect r ic loss can
be specied using TanD or Sigma or bot h.
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. If t he values of A and B ar e such t hat B > A, t hen B is assumed t o be t he widt h,
and A is assumed t o be t he height .
5. This component has no default ar t wor k associat ed wit h it .
6. R. Ramo and J. R. Whinner y, Fields and Waves in Modern Radio, 2nd Ed., J ohn
Wiley and Sons, New Yor k, 1960.
7-24
Waveguide Components
RWGINDF (Rectangular Waveguide Inductive Fin)
Symbol
Illustration
Parameters
A = inside widt h of enclosur e, in specied unit s
B = inside height of enclosur e, in specied unit s
L = lengt h of t he n, in specied unit s
Er = r elat ive dielect r ic const ant
Rho = met al r esist ivit y (r elat ive t o copper )
TanD =dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
0.02 L/A 1.1
B < A/2
TE10 mode only
Simulat ion fr equency > FC
wher e
7-25
FC = cut off fr equency of waveguide
Notes/Equations/References
1. St r ip is cent er ed bet ween sidewalls of waveguide. St r ip cont act s t op and bot t om
of waveguide.
2. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
3. This component has no default ar t wor k associat ed wit h it .
7-26
Waveguide Components
RWGT (Rectangular Waveguide Termination)
Symbol
Illustration
Parameters
A = inside widt h of enclosur e, in specied unit s
B = inside height of enclosur e, in specied unit s
Er = r elat ive dielect r ic const ant
Rho = met al r esist ivit y (r elat ive t o copper )
TanD = dielect r ic loss t angent
Mur = r elat ive per meabilit y
TanM = per meabilit y
Sigma = dielect r ic conduct ivit y
Temp = physical t emper at ur e, in C
Range of Usage
A > B
TE10 and evanescent (below cut off) modes ar e suppor t ed.
Notes/Equations/References
1. The power-volt age denit ion of waveguide impedance is used in t he
fr equency-domain analyt ical model.
2. Conduct or losses can be specied using Rho or TanM or bot h. Dielect r ic loss can
be specied using TanD or Sigma or bot h.
INFINITELY LONG
7-27
3. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
4. If t he values of A and B ar e such t hat B > A, t hen B is assumed t o be t he widt h,
and A is assumed t o be t he height .
5. This component has no default ar t wor k associat ed wit h it .
6. R. Ramo and J. R. Whinner y. Fields and Waves in Modern Radio, 2nd Ed., J ohn
Wiley and Sons, New Yor k, 1960.
This chapt er has par amet er s for t he simulat ion cont r ol element s list ed above. Ther e
ar e some unr esolved xr efs in her e--you will eit her want t o r emove t he r efer ence or
updat e it when we know how t o make ext er nal xr efs.
7-28
Waveguide Components
PCB Model Basis and Limits 8-1
Chapter 8: Printed Circuit Board
Components
PCB Model Basis and Limits
The pr int ed cir cuit boar d line component s available in t his libr ar y ar e based on a
quasi-st at ic analysis in an enclosed r egion wit h st r at ied layer s of a single dielect r ic.
The dielect r ic layer s and t he met al enclosur e ar e specied by PCSUBn (n=1, ... , 7)
wher eas t he coupled lines ar e specied by PCLINn (n=1, ... , 10). Ther e can be any
combinat ion of 1 t o 10 conduct ing st r ips and 1 t o 7 dielect r ic layer s. In ot her wor ds,
for a given PCLINn, it s conduct or s can be associat ed wit h any met al layer s of a given
PCSUBn.
All of t he dielect r ic layer s of a PCSUBn have t he same dielect r ic const ant . However,
each dielect r ic layer can have a differ ent t hickness. Ther e can be an air layer above
t he t op-most dielect r ic or below t he bot t om-most dielect r ic. When an air layer exist s,
t her e may be a conduct or pat t er n at t he air-dielect r ic int er face. The st r uct ur e can be
open or cover ed by a conduct ing shield at t he t op and at t he bot t om. The sidewalls ar e
r equir ed.
Method of Analysis
The model is t hat of N coupled TEM t r ansmission lines. Laplaces equat ion is solved
in t he plane t r ansver se t o t he dir ect ion of pr opagat ion subject t o appr opr iat e
boundar y condit ions at t he conduct ing sur faces. Then t he solut ion of Laplaces
equat ion is used t o for mulat e t he indenit e admit t ance mat r ix for N-coupled TEM
t r ansmission lines. The solut ion of Laplaces equat ion is by means of nit e
differ ences.
The quasi-st at ic solut ion makes t hese suit able for use at RF fr equencies and for
high-speed digit al applicat ions.
Because t he analysis is quasi-st at ic, t he t ime r equir ed for analysis is impr oved. In
cont r ast t o a full-wave analysis, which is expect ed t o be slow, a quasi-st at ic analysis
is expect ed t o be r elat ively fast . Essent ially all of t he analysis t ime is r equir ed for t he
solut ion of t he Laplace's equat ion.
The mesh size used in t he nit e differ ence solut ion of Laplace's equat ion is t he single
most impor t ant det er minant of analysis t ime for a given st r uct ur e. Use discr et ion
8-2 PCB Model Basis and Limits
Printed Circuit Board Components
when specifying t he widt h of t he enclosur e (par amet er W of PCSUBn) and t he
height s of t he upper and lower conduct ing shields (Hu and Hl par amet er s of
PCSUBn). Specifying lar ge values for t hese par amet er s r equir es a lar ge number of
cells for t he mesh r esult ing in longer simulat ion t imes. If sidewalls ar e not act ually
pr esent t hen a r ough guide is t o use a spacing of 10 conduct or widt hs t o t he sidewalls
inst ead of specifying a lar ge number for t he widt h of enclosur e.
Assumptions and Limitations
The conduct or t hickness is used solely for loss calculat ions. In t he solut ion of
Laplace's equat ion t he conduct or s ar e assumed t o have zer o t hickness. Conduct or
losses ar e effect ively ignor ed if t he t hickness is set t o zer o or if Rho is set t o 0.
Conduct or losses include bot h dc and skin effect calculat ions.
The dielect r ic loss is account ed for by non-zer o dielect r ic conduct ivit y, Sigma.
Pr ovision for a fr equency-dependent loss t angent component has been made by
specicat ion of t he TanD par amet er, but is not used in t he pr esent implement at ion.
In pr inciple, t he aspect r at io (conduct or widt h t o dielect r ic t hickness or hor izont al
spacing bet ween conduct or s) is unr est r ict ed. In r ealit y, t he pr oblem size (and,
t her efor e, comput at ion t ime) incr eases gr eat ly for aspect r at ios less t han 0.1 or
gr eat er t han 10. It is highly r ecommended t o keep t he aspect r at io wit hin t his r ange.
References
Vijai K. Tr ipat hi and Richar d J. Bucolo, A Simple Net wor k Analog Appr oach for t he
Quasi-St at ic Char act er ist ics of Gener al Lossy, Anisot r opic, Layer ed St r uct ur es,
IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-33, No. 12, pp.
1458-1464; December 1985.
PCBEND (PCB Bend (Arbitrary Angle/Miter)) 8-3
PCBEND (PCB Bend (Arbitrary Angle/Miter))
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W = conduct or widt h, in specied unit s
CLayer = conduct or layer number
Angle = angle of bend, in degr ees
M = mit er fr act ion
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
1 CLayer Nlayer s+1
8-4 PCBEND (PCB Bend (Arbitrary Angle/Miter))
Printed Circuit Board Components
90 Angle 90, degr ees
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as an ideal shor t -cir cuit bet ween pins 1 and 2. It is
pr ovided mainly t o facilit at e int er connect ions bet ween PCB lines or ient ed at
differ ent angles in layout .
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. In layout , a posit ive value for Angle dr aws a count er clockwise bend fr om pin 1
t o 2; a negat ive value for Angle dr aws a clockwise bend.
5. Layout ar t wor k r equir es placing a PCSUBi(i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
PCCORN (Printed Circuit Corner) 8-5
PCCORN (Printed Circuit Corner)
Symbol
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W = conduct or widt h, in specied unit s
CLayer = conduct or layer number
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. This component is t r eat ed as an ideal connect ion bet ween pins 1 and 2, and is
pr ovided mainly t o facilit at e int er connect ions bet ween PCB lines in layout .
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1, 2, ... , 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. Layout ar t wor k r equir es placing a PCSUBi(i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-6 PCCROS Printed Circuit Cross-Junction
Printed Circuit Board Components
PCCROS Printed Circuit Cross-Junction
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W1 = widt h at pin 1, in specied unit s
W2 = widt h at pin 2, in specied unit s
W3 = widt h at pin 3, in specied unit s
W4 = widt h at pin 4, in specied unit s
CLayer = conduct or layer number
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
PCCROS Printed Circuit Cross-Junction 8-7
Notes/Equations/References
1. This component is t r eat ed as an ideal connect ion bet ween pins 1, 2, 3, and 4,
and has been pr ovided mainly t o facilit at e int er connect ions among PCB lines in
layout .
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2,..., 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. Layout ar t wor k r equir es placing a PCSUBi (i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-8 PCCURVE (PCB Curve)
Printed Circuit Board Components
PCCURVE (PCB Curve)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W = conduct or widt h, in specied unit s
CLayer = conduct or layer number
Angle = angle subt ended by t he bend, in degr ees
Radius = r adius (measur ed t o cent er of conduct or ), in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
1 CLayer Nlayer s+1
180 Angle 180, degr ees
Radius W/2
wher e
PCCURVE (PCB Curve) 8-9
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as PCLIN1, assuming a single st r aight line of
lengt h RadiusAngle, wher e Angle is in r adians. The single line is assumed t o
be locat ed halfway bet ween and par allel t o t he sidewalls. The dist ance bet ween
t he sidewalls is given as par t of t he PCSUBi specicat ion.
2. The dist ance bet ween t he sidewalls is t ypically t he widt h of t he met al enclosur e
ar ound t he PC boar d. If t he met al enclosur e is absent , widt h of t he PC boar d
it self can be specied and t r eat ed as t he dist ance bet ween t he sidewalls. Not e,
however, t hat t he simulat ion t ime incr eases r apidly as t he sidewall dist ance
incr eases. If t he effect of t he sidewalls is not impor t ant , it is highly
r ecommended t o set it t o appr oximat ely 10 t imes t he line widt h for t his
component .
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
6. This component has been pr ovided mainly t o facilit at e int er connect ions
bet ween PCB lines or ient ed at differ ent angles in layout .
7. In layout , a posit ive value for Angle species a count er clockwise cur vat ur e; a
negat ive value species a clockwise cur vat ur e.
8. Layout ar t wor k r equir es placing a PCSUBi (i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-10 PCILC (Printed Circuit Inter-layer Connection)
Printed Circuit Board Components
PCILC (Printed Circuit Inter-layer Connection)
Symbol
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
D = diamet er of via hole, in specied unit s
CLayer 1 = conduct or layer number at pin 1
CLayer 2 = conduct or layer number at pin 2
Temp = physical t emper at ur e, in C
Ang = (for Layout Opt ion) angle of or ient at ion at pin 2, in degr ees
W1 = (for Layout Opt ion) widt h of squar e pad or diamet er of cir cular pad on layer
CLayer 1, in specied unit s
W2 = (for Layout Opt ion) widt h of squar e pad or diamet er of cir cular pad on layer
CLayer 2, in specied unit s
Type = (for Layout Opt ion) t ype of via pad, square or circular
Range of Usage
1 CLayer 1, CLayer 2 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i= 1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as an ideal connect ion bet ween pin 1 and pin 2 and
has been pr ovided mainly t o facilit at e int er connect ions bet ween PCB
component s placed on differ ent conduct or layer s in layout .
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
PCILC (Printed Circuit Inter-layer Connection) 8-11
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. Type species t he t ype of t he via pad. Type=squar e dr aws a squar e pad on
layer s CLayer 1 and CLayer 2; Type=cir cular dr aws a cir cular pad on layer s
CLayer 1 and CLayer 2.
5. Layout ar t wor k r equir es placing a PCSUBi (i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-12 PCLIN1 (1 Printed Circuit Line)
Printed Circuit Board Components
PCLIN1 (1 Printed Circuit Line)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W = widt h of line, in specied unit s
S1 = dist ance fr om line t o left wall, in specied unit s
CLayer 1 = conduct or layer number
(value t ype: int eger )
L = lengt h of line, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
S1 > 0
1 CLayer 1 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
S1
W
CLayer1 = 2
Pin 1
(Pin 2 far side)
PCLIN1 (1 Printed Circuit Line) 8-13
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-14 PCLIN2 (2 Printed Circuit Coupled Lines)
Printed Circuit Board Components
PCLIN2 (2 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0
S1 > 0, S2 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
wher e
W1
CLayer2 = 2
Pin 1
(Pin 4 far side)
S1
W2 S2
Pin 2
(Pin 3 far side)
CLayer1 = 3
PCLIN2 (2 Printed Circuit Coupled Lines) 8-15
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB model basis and
limit s at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-16 PCLIN3 (3 Printed Circuit Coupled Lines)
Printed Circuit Board Components
PCLIN3 (3 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3
(value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
CLayer3 = 2
Pin 1 (Pin 6 far side)
S1
S2
Pin 2 (Pin 5 far side)
CLayer1, CLayer2 = 3
W1
W2
S3
W3
Pin 3 (Pin 4 far side)
PCB Model Basis and Limits 8-17
Range of Usage
W1 > 0, W2 > 0, W3 > 0
S1 > 0, S2 > 0, S3 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-18 PCB Model Basis and Limits
Printed Circuit Board Components
PCLIN4 (4 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer3 = 2
S1
S2
CLayer1, CLayer2=3
W1
W2
S3
W3
W4
S4
CLayer4 = 1
Pin 1 (Pin 8 far side)
Pin 2 (Pin 7 far side)
Pin 3 (Pin 6 far side)
Pin 4 (Pin 5 far side)
PCB Model Basis and Limits 8-19
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0
S1 > 0, S2 > 0, S3 > 0, S4 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. The PCSUBi has bet ween 1
and 7 dielect r ic layer s, and any conduct or can be placed above or below any
dielect r ic layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-20 PCB Model Basis and Limits
Printed Circuit Board Components
PCLIN5 (5 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S1
S
W1
W2
S3
W3
W4
S4
S5
W5
CLayer3 = 2
CLayer1, CLayer2 = 3
CLayer4, CLayer5 = 1
Pin 1 (Pin 10 far side)
Pin 2 (Pin 9 far side)
Pin 3 (Pin 8 far side)
Pin 4 (Pin 7 far side)
Pin 5 (Pin 6 far side)
PCB Model Basis and Limits 8-21
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0
S1 > 0, S2 > 0 S3 > 0, S4 > 0, S5 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
8-22 PCB Model Basis and Limits
Printed Circuit Board Components
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
PCB Model Basis and Limits 8-23
PCLIN6 (6 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
CLayer3, CLayer4 = 2
CLayer1, CLayer2 = 3
CLayer5, CLayer6 = 1
Pin 1 (Pin 12 far side)
Pin 2 (Pin 11 far side)
Pin 3 (Pin 10 far side)
Pin 4 (Pin 9 far side)
Pin 5 (Pin 8 far side)
Pin 6 (Pin 7 far side)
S5
8-24 PCB Model Basis and Limits
Printed Circuit Board Components
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
W6 = widt h of line #6, in specied unit s
S6 = dist ance fr om line #6 t o left wall, in specied unit s
CLayer 6 = conduct or layer number - line #6 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0, W6 >0
S1 > 0, S2 > 0, S3 > 0, S4 > 0, S5 > 0, S6 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
1 CLayer 6 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
PCB Model Basis and Limits 8-25
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-26 PCB Model Basis and Limits
Printed Circuit Board Components
PCLIN7 (7 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
W7
S5
S7
CLayer3, CLayer4 = 2
CLayer1, CLayer2,
CLayer7 = 3
CLayer5, CLayer6 =1
Pin 1 (Pin 14 far side)
Pin 2 (Pin 13 far side)
Pin 3 (Pin 12 far side)
Pin 4 (Pin 11 far side) Pin 5 (Pin 10 far side)
Pin 6 (Pin 9 far side)
Pin 7 (Pin 8 far side)
PCB Model Basis and Limits 8-27
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
W6 = widt h of line #6, in specied unit s
S6 = dist ance fr om line #6 t o left wall, in specied unit s
CLayer 6 = conduct or layer number - line #6 (value t ype: int eger )
W7 = widt h of line #7, in specied unit s
S7 = dist ance fr om line #7 t o left wall, in specied unit s
CLayer 7 = conduct or layer number - line #7 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1 > 0, W2 > 0, W3 > 0, W4 > 0, W5 > 0, W6 >0, W7 >0
S1 > 0, S2 > 0, S3 > 0, S4 > 0, S5 > 0, S6 > 0, S7 > 0
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
1 CLayer 6 Nlayer s+1
8-28 PCB Model Basis and Limits
Printed Circuit Board Components
1 CLayer 7 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
PCB Model Basis and Limits 8-29
PCLIN8 (8 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
S1
S2
W1
W2
S3
W3
W5
S4
S6
W6
W4
W7
S5
S7
Pin 1 (Pin 16 far side)
Pin 2 (Pin 15 far side)
Pin 3 (Pin 14 far side)
Pin 4 (Pin 13 far side)
Pin 5 (Pin 12 far side)
Pin 6 (Pin 11 far side)
W8
S8
Pin 8 (Pin 9 far side)
Pin 7 (Pin 10 far side)
CLayer3, CLayer4,
CLayer7 = 2
CLayer1, CLayer2,
CLayer8 = 3
CLayer5, CLayer6 = 1
8-30 PCB Model Basis and Limits
Printed Circuit Board Components
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
W6 = widt h of line #6, in specied unit s
S6 = dist ance fr om line #6 t o left wall, in specied unit s
CLayer 6 = conduct or layer number - line #6 (value t ype: int eger )
W7 = widt h of line #7, in specied unit s
S7 = dist ance fr om line #7 t o left wall, in specied unit s
CLayer 7 = conduct or layer number - line #7 (value t ype: int eger )
W8 = widt h of line #8, in specied unit s
S8 = dist ance fr om line #8 t o left wall, in specied unit s
CLayer 8 = conduct or layer number - line #8 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Wi > 0 for i = 1, ... , 8
Si > 0 for i = 1, ... , 8
1 CLayer 1 Nlayer s+1
PCB Model Basis and Limits 8-31
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
1 CLayer 6 Nlayer s+1
1 CLayer 7 Nlayer s+1
1 CLayer 8 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1, 2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-32 PCB Model Basis and Limits
Printed Circuit Board Components
PCLIN9 (9 Printed Circuit Coupled Lines)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1, 2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1
S2
W2
S3
W5
S4
S6
W6
W7
S5
S7
CLayer4, CLayer5,
CLayer6 = 2
CLayer1, CLayer2,
CLayer3 = 3
CLayer7, CLayer8,
CLayer9 = 1
Pin 1 (Pin 18 far side)
Pin 2 (Pin 17 far side)
Pin 3 (Pin 16 far side)
Pin 4 (Pin 15 far side)
Pin 5 (Pin 14 far side)
Pin 6 (Pin 13 far side)
W8
S8
Pin 9 (Pin 10 far side)
Pin 8 (Pin 11 far side)
Pin 7 (Pin 12 far side)
W1
W3
W4
W9
S9
PCB Model Basis and Limits 8-33
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
W6 = widt h of line #6, in specied unit s
S6 = dist ance fr om line #6 t o left wall, in specied unit s
CLayer 6 = conduct or layer number - line #6 (value t ype: int eger )
W7 = widt h of line #7, in specied unit s
S7 = dist ance fr om line #7 t o left wall, in specied unit s
CLayer 7 = conduct or layer number - line #7 (value t ype: int eger )
W8 = widt h of line #8, in specied unit s
S8 = dist ance fr om line #8 t o left wall, in specied unit s
CLayer 8 = conduct or layer number - line #8 (value t ype: int eger )
W9 = widt h of line #9, in specied unit s
S9 = dist ance fr om line #9 t o left wall, in specied unit s
CLayer 9 = conduct or layer number - line #9 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
8-34 PCB Model Basis and Limits
Printed Circuit Board Components
Temp = physical t emper at ur e, in C
Range of Usage
Wi > 0 for i = 1, ... , 9
Si > 0 for i = 1, ... , 9
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
1 CLayer 6 Nlayer s+1
1 CLayer 7 Nlayer s+1
1 CLayer 8 Nlayer s+1
1 CLayer 9 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1, 2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1, 2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
PCB Model Basis and Limits 8-35
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-36 PCB Model Basis and Limits
Printed Circuit Board Components
PCLIN10 (10 Printed Circuit Coupled Lines)
Symbol
Illustration
S1
S2
W2
S3
W5
S4
S6
W6
W7
S5
S7
CLayer10=1
Pin 1 (Pin 20 far side)
Pin 2 (Pin 19 far side)
Pin 3 (Pin 18 far side)
Pin 6 (Pin 15 far side)
W8
S8
Pin 9 (Pin 12 far side)
Pin 8 (Pin 13 far side)
Pin 7 (Pin 14 far side)
W1
W3
W4
W9
S9
Pin 4 (Pin 17 far side)
Pin 5 (Pin 16 far side)
W10
Pin 10 (Pin 11 far side)
S10
CLayer7, CLayer8,
CLayer9=1
CLayer4, CLayer5,
CLayer6=2
CLayer1, CLayer2,
CLayer3=3
PCB Model Basis and Limits 8-37
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h of line #1, in specied unit s
S1 = dist ance fr om line #1 t o left wall, in specied unit s
CLayer 1 = conduct or layer number - line #1 (value t ype: int eger )
W2 = widt h of line #2, in specied unit s
S2 = dist ance fr om line #2 t o left wall, in specied unit s
CLayer 2 = conduct or layer number - line #2 (value t ype: int eger )
W3 = widt h of line #3, in specied unit s
S3 = dist ance fr om line #3 t o left wall, in specied unit s
CLayer 3 = conduct or layer number - line #3 (value t ype: int eger )
W4 = widt h of line #4, in specied unit s
S4 = dist ance fr om line #4 t o left wall, in specied unit s
CLayer 4 = conduct or layer number - line #4 (value t ype: int eger )
W5 = widt h of line #5, in specied unit s
S5 = dist ance fr om line #5 t o left wall, in specied unit s
CLayer 5 = conduct or layer number - line #5 (value t ype: int eger )
W6 = widt h of line #6, in specied unit s
S6 = dist ance fr om line #6 t o left wall, in specied unit s
CLayer 6 = conduct or layer number - line #6 (value t ype: int eger )
W7 = widt h of line #7, in specied unit s
S7 = dist ance fr om line #7 t o left wall, in specied unit s
CLayer 7 = conduct or layer number - line #7 (value t ype: int eger )
W8 = widt h of line #8, in specied unit s
S8 = dist ance fr om line #8 t o left wall, in specied unit s
CLayer 8 = conduct or layer number - line #8 (value t ype: int eger )
W9 = widt h of line #9, in specied unit s
8-38 PCB Model Basis and Limits
Printed Circuit Board Components
S9 = dist ance fr om line #9 t o left wall, in specied unit s
CLayer 9 = conduct or layer number - line #9 (value t ype: int eger )
W10 = widt h of line #10, in specied unit s
S10 = dist ance fr om line #10 t o left wall, in specied unit s
CLayer 10 = conduct or layer number - line #10 (value t ype: int eger )
L = lengt h of t he lines, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
Wi > 0 for i = 1, ... , 10
Si > 0 for i = 1, ... , 10
1 CLayer 1 Nlayer s+1
1 CLayer 2 Nlayer s+1
1 CLayer 3 Nlayer s+1
1 CLayer 4 Nlayer s+1
1 CLayer 5 Nlayer s+1
1 CLayer 6 Nlayer s+1
1 CLayer 7 Nlayer s+1
1 CLayer 8 Nlayer s+1
1 CLayer 9 Nlayer s+1
1 CLayer 10 Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. The 2-layer illust r at ion shown is only an example. PCSUBi has bet ween 1 and 7
dielect r ic layer s, and any conduct or can be placed above or below any dielect r ic
layer. Conduct or s can over lap if desir ed.
PCB Model Basis and Limits 8-39
2. The fr equency-domain analyt ical model for t his component is a non-disper sive
st at ic model developed by Agilent . Refer t o t he sect ion PCB Model Basis and
Limit s on page 8-1 at t he beginning of t his chapt er.
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1, 2, ... , 7) if Hl=0.
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
8-40 PCB Model Basis and Limits
Printed Circuit Board Components
PCSTEP (PCB Symmetric Steps)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1= widt h at pin 1, in specied unit s
W2 = widt h at pin 2, in specied unit s
CLayer = conduct or layer number (value t ype: int eger )
Temp = physical t emper at ur e, in C
Range of Usage
W1, W2 > 0
1 CLayer Nlayer s+1
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as an ideal shor t cir cuit bet ween pins 1 and 2 and is
pr ovided mainly t o facilit at e int er connect ions bet ween PCB lines of differ ent
widt h in layout .
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
PCB Model Basis and Limits 8-41
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1, 2, ... , 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Layout ar t wor k r equir es placing a PCSUBi (i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-42 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB1 (1-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
H1 = t hickness of dielect r ic layer #1, in specied unit s
Er = dielect r ic const ant
Cond = conduct or conduct ivit y
Hu = upper gr ound plane spacing, in specied unit s
Hl = lower gr ound plane spacing, in specied unit s
T = met al t hickness, in specied unit s
W = dist ance bet ween sidewalls, in specied unit s
Sigma = dielect r ic conduct ivit y, in Siemens per met er
Range of Usage
H1 > 0, Er 0, Sigma 0
T 0, Hu 0, Hl 0, W > 0
Hu
H1
Hl
= o Er
e = eo
= o
W
PCB Model Basis and Limits 8-43
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-44 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB2 (2-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
H1 = t hickness of dielect r ic layer #1, in specied unit s
H2 = t hickness of dielect r ic layer #2, in specied unit s
Er = dielect r ic const ant
Cond = conduct or conduct ivit y
Sigma = dielect r ic conduct ivit y, in Siemens per met er
T = met al t hickness, in specied unit s
Hu = upper gr ound plane spacing, in specied unit s
Hl = lower gr ound plane spacing, in specied unit s
W = dist ance bet ween sidewalls, in specied unit s
Range of Usage
Hi > 0 for Hi = 1, 2, Er 0, Sigma 0
T 0, Hu 0, Hl 0, W > 0
Hu
H2
Hl
= o Er
= o
= o
W
H1 e
= o Er
PCB Model Basis and Limits 8-45
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-46 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB3 (3-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
H1 = t hickness of dielect r ic layer #1, in specied unit s
H2 = t hickness of dielect r ic layer #2, in specied unit s
H3 = t hickness of dielect r ic layer #3, in specied unit s
Er = dielect r ic const ant
Cond = conduct or conduct ivit y
T = met al t hickness, in specied unit s
Hu = upper gr ound plane spacing, in specied unit s
Hl = lower gr ound plane spacing, in specied unit s
W = dist ance bet ween sidewalls, in specied unit s
Sigma = dielect r ic conduct ivit y, in Siemens per met er
Range of Usage
Hi > 0 for Hi = 1, ..., 3, Er 0, Sigma 0
T 0, Hu 0, Hl 0, W > 0
Hu
H3
Hl
= o
= o
W
H2
= o Er
= o Er
= o Er H1
PCB Model Basis and Limits 8-47
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-48 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB4 (4-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
H1 = t hickness of dielect r ic layer #1, in specied unit s
H2 = t hickness of dielect r ic layer #2, in specied unit s
H3 = t hickness of dielect r ic layer #3, in specied unit s
H4 = t hickness of dielect r ic layer #4, in specied unit s
Er = dielect r ic const ant
Cond = conduct or conduct ivit y
Hu = upper gr ound plane spacing, in specied unit s
Hl = lower gr ound plane spacing, in specied unit s
T = met al t hickness, in specied unit s
W = dist ance bet ween sidewalls, in specied unit s
Sigma = dielect r ic conduct ivit y, in Siemens per met er
Range of Usage
Hi > 0 for Hi = 1, ..., 4, Er 0, Sigma 0
Hu
H4
Hl
= o
= o
W
H3
= o Er
= o Er
H1
= o Er
= o Er
H2
PCB Model Basis and Limits 8-49
T 0, Hu 0, Hl 0, W > 0
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-50 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB5 (5-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
H1 = t hickness of dielect r ic layer #1, in specied unit s
H2 = t hickness of dielect r ic layer #2, in specied unit s
H3 = t hickness of dielect r ic layer #3, in specied unit s
H4 = t hickness of dielect r ic layer #4, in specied unit s
H5 = t hickness of dielect r ic layer #5, in specied unit s
Er = dielect r ic const ant
Cond = conduct or conduct ivit y
Hu = upper gr ound plane spacing, in specied unit s
Hl = lower gr ound plane spacing, in specied unit s
T = met al t hickness, in specied unit s
W = dist ance bet ween sidewalls, in specied unit s
Sigma = dielect r ic conduct ivit y, in Siemens per met er
Hu
H5
Hl
= o
= o
W
H4
H2
= o Er
H3
= o Er
= o Er
= o Er
= o Er
H1
PCB Model Basis and Limits 8-51
Range of Usage
Hi > 0 for Hi = 1,..., 5, Er 0,
Sigma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-52 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB6 (6-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
None
Range of Usage
Hi > 0 for Hi = 1, ..., 6, Er 0,
Sigma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
Hu
H6
Hl
= o
= o
W
H5
H3
= o Er
H4
= o Er
= o Er
H2
= o Er
= o Er
= o Er
H1
PCB Model Basis and Limits 8-53
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-54 PCB Model Basis and Limits
Printed Circuit Board Components
PCSUB7 (7-Layer Printed Circuit Substrate)
Symbol
Illustration
Parameters
None
Range of Usage
Hi > 0 for Hi = 1, ..., 7, Er 0,
Sigma 0, T 0, Hu 0, Hl 0, W > 0
Notes/Equations/References
1. Refer t o t he sect ion Assumpt ions and Limit at ions on page 8-2 at t he
beginning of t his chapt er for impor t ant infor mat ion.
2. A PCSUBi (i=1,2, ... , 7) is r equir ed for all PCB component s.
3. PCSUBi species a mult i-layer ed dielect r ic subst r at e wit h t he number of
dielect r ic layer s=i. The dielect r ic const ant of all t he layer s is t he same but t he
t hickness of each layer can be differ ent . The st r uct ur e is enclosed by met al
sidewalls. The t op and bot t om met al enclosur es ar e opt ional.
Hu
H7
Hl
= o
= o
W
H6
H4
= o Er
H5
= o Er
= o Er
H3
= o Er
= o Er
= o Er
H2
= o Er
H1
PCB Model Basis and Limits 8-55
4. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
5. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
8-56 PCB Model Basis and Limits
Printed Circuit Board Components
PCTAPER (PC Tapered Line)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h at pin 1, in specied unit s
W2 = widt h at pin 2, in specied unit s
CLayer = conduct or layer number (value t ype: int eger )
L = lengt h of line, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W1, W2 > 0
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as PCLIN1. Widt h of t he line is assumed t o be (W1
+ W2)/2. The single line is assumed t o be locat ed halfway bet ween and par allel
t o t he sidewalls. The dist ance bet ween t he sidewalls is given as a par t of t he
PCSUBi par amet er W.
2. The dist ance bet ween t he sidewalls is t ypically t he widt h of t he met al enclosur e
ar ound t he PC boar d. If t he met al enclosur e is absent , widt h of t he PC boar d
PCB Model Basis and Limits 8-57
it self can be specied and t r eat ed as t he dist ance bet ween t he sidewalls. Not e,
however, t hat t he simulat ion t ime incr eases r apidly as t he sidewall dist ance
incr eases. If t he effect of t he sidewalls is not impor t ant , it is highly
r ecommended t o set it t o appr oximat ely 10 t imes t he line widt h for t his
component .
3. This component is pr ovided mainly t o facilit at e int er connect ion bet ween PCB
lines of differ ent widt hs in layout .
4. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2,..., 7) if Hl=0.
5. Gold conduct ivit y is 4.110
7
S/m. Rough modies loss calculat ions.
Conduct ivit y for copper is 5.810
7.
6. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
7. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
8-58 PCB Model Basis and Limits
Printed Circuit Board Components
PCTEE (Printed Circuit T-Junction)
Symbol
Illustration
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W1 = widt h at pin 1, in specied unit s
W2 = widt h at pin 2, in specied unit s
W3 = widt h at pin 3, in specied unit s
CLayer = conduct or layer number (value t ype: int eger )
Temp = physical t emper at ur e, in C
Range of Usage
Wi > 0 for Wi = 1, ..., 3
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is t r eat ed as an ideal connect ion bet ween pins 1, 2, and 3, and
has been pr ovided mainly t o facilit at e int er connect ions bet ween PCB lines
or ient ed at differ ent angles in layout .
PCB Model Basis and Limits 8-59
2. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2,..., 7) if Hl=0.
3. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
4. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
5. Layout ar t wor k r equir es placing a PCSUBi (i=1, 2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-60 PCB Model Basis and Limits
Printed Circuit Board Components
PCTRACE (Single PCB Line (Trace))
Symbol
Parameters
Subst = pr int ed cir cuit subst r at e name (PCSUBi, i=1,2, ... , 7)
W = widt h of line, in specied unit s
CLayer = conduct or layer number (value t ype: int eger )
L = lengt h of line, in specied unit s
Temp = physical t emper at ur e, in C
Range of Usage
W > 0
1 CLayer Nlayer s+1
wher e
Nlayer s = number of layer s specied by PCSUBi (i=1,2, ... , 7)
Notes/Equations/References
1. This component is modeled as PCLIN1. The single line is assumed t o be locat ed
halfway bet ween and par allel t o t he sidewalls. The dist ance bet ween t he
sidewalls is given as a par t of t he PCSUBi par amet er W.
2. The dist ance bet ween t he sidewalls is t ypically t he widt h of t he met al enclosur e
ar ound t he PC boar d. If t he met al enclosur e is absent , widt h of t he PC boar d
it self can be specied and t r eat ed as t he dist ance bet ween t he sidewalls. Not e,
however, t hat t he simulat ion t ime incr eases r apidly as t he sidewall dist ance
incr eases. If t he effect of t he sidewalls is not impor t ant , it is highly
r ecommended t o set it t o appr oximat ely 10 t imes t he line widt h for t his
component .
3. The value of CLayer and t he value of t he associat ed PCSUB par amet er s Hu and
Hl must be compat ible so as t o not shor t out t he CLayer t o t he upper or lower
gr ound plane. For example, it is invalid for CLayer =1 if Hu=0 or for CLayer =i+1
(for PCSUBi, i=1,2,..., 7) if Hl=0.
PCB Model Basis and Limits 8-61
4. Conduct or layer s ar e number ed as follows: t he upper sur face of t he t op
dielect r ic layer (or dielect r ic layer #1) is conduct or layer #1; t he lower sur face of
t he dielect r ic layer #1 (which could also be t he upper sur face of t he dielect r ic
layer #2) is conduct or layer #2; et c. When using a PCSUBi subst r at e, t he lower
sur face of dielect r ic layer #i is conduct or layer #(2+1).
5. For t ime-domain analysis, an impulse r esponse obt ained fr om t he
fr equency-domain analyt ical model is used.
6. To t ur n off noise cont r ibut ion, set Temp t o 273.15C.
7. This component is pr ovided mainly t o facilit at e int er connect ions bet ween PCB
lines in layout .
8. Layout ar t wor k r equir es placing a PCSUBi(i=1,2, ... , 7) pr ior t o placing t he
component dir ect ly in t he Layout window.
8-62 PCB Model Basis and Limits
Printed Circuit Board Components
Index-1
Index
F
finline components, 1-1
M
microstrip components, 2-1
multilayer interconnect components, 3-1
P
printed circuit board components, 8-1
S
stripline components, 4-1
suspended substrate components, 5-1
T
transmission line components, 6-1
W
waveguide components, 7-1
Index-2

You might also like