TG520-10

Product Features
Surface Mount Hybrid Type No matching circuit needed High Efficiency High Linearity Psat 10W Power Alumina Substrate GaN HEMT Chip on board

Preliminary

GaN Hybrid Amplifier

Application
TRS(Trunked Radio System) RF Sub-Systems Base Station

Package : CP-6C

Description
The power amplifier module is designed for TETRA (Terrestrial Trunked Radio, formerly known as Trans European Trunked Radio) applications. TETRA networks are already operational in all the traditional PMR market segments, such as Public Safety, Transportation, Utilities, Government, PAMR, Commercial & Industry and Oil & Gas. GaN HEMT technology is used and attached on a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.

Specifications
PARAMETER
Frequency Range Small Signal Gain Gain Flatness Return Loss Power Gain(@P1dB) Power Gain Flatness (@P1dB) Output P1dB Output P3dB Efficiency @ P3dB Vdd Ids Load Mismatch Value Dimensions (WLH) Pout = 40dBm all load phase Vdd =28V, Idq = 0mA 50% Vdd =28V Vdd =28V Vdd =28V, Idq = 150mA

Test Condition
Z0 = ZL = 50 ohm

Min
30MHz 18dB

Typ

Max
520MHz

20dB 1dB - 8dB 16dB 2dB 39dBm 40dBm 60% 28V 600mA 5:1 700mA 1.5dB - 4dB

15 10 5.4 [mm] (TG1)

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3

TG520-10

Preliminary

GaN Hybrid Amplifier

Performance Charts (Small Signal Gain S-Parameter: Vdd=28V, Idq=150mA, T=25)

Small Signal Gain vs. Frequency
21
0 -5

Return Loss vs. Frequency

20
-10 Mag(dB)

Mag(dB)

19

-15 -20 -25 -30 -35

18

17

16 50 150 250 350 450 550 650 750 850 950 Frequency(MHz)

50

150

250

350

450

550

650

750

850

950

Frequency(MHz) S11(dB) S22(dB)

Performance Charts (Power Gain: Vdd=28V, Idq=0mA, T=25)

Power Gain vs. Frequency (Vdd=28V)
20 19 18
Output Power(dBm) 42 41 40 39 38 37 36 35 34 33

P1dB&P3dB vs. Frequency (Vdd=28V)

P ow er G ain(dB)

17 16 15 14 13 12 11 10 30 120 220 Frequency(MHz) Max P1dB P3dB 320 420 520

32 30 120 220 Frequency(MHz) P1dB P3dB 320 420 520

Efficiency vs. Frequency (Vdd=28V)

80 75 600 70 65 Efficiency(%) 60 55 50 45 40 100 35 30 30 120 220 Frequency(MHz) P1dB P3dB 320 420 520 0 30 Current(mA) 500 400 300 200 700

Pout Current vs. Frequency (Vdd=28V)

120

220

320 Frequency(MHz) P1dB P3dB

420

520

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3

TG520-10

Preliminary

GaN Hybrid Amplifier

Performance Charts (Pin versus Pout: Vdd=28V, Idq=0mA, T=25)

Vdd=28V@30MHz
19 18 17 60.000 Power Gain(dB) 16 15 14 13 12 20.000 11 10 9 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
P_Gain Efficiency

Vdd=28V@30MHz
80.000 70.000
500 450 400 350 Current(mA)

50.000 40.000 30.000

300 250 200 150 100 50 0 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)

Current

10.000 0.000

Vdd=28V@120MHz

Vdd=28V@120MHz

20 19 18

80.000 70.000

600 500

60.000 Power Gain(dB) 17 16 15 14 13 20.000 12 11 10 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)

P_Gain Efficiency

50.000 40.000 30.000

Current(mA)

400 300 200 100 0 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)

Current

10.000 0.000

Vdd=28V@220MHz

Vdd=28V@220MHz
80.000 70.000
500

19 18 17

600

60.000 Power Gain(dB) 16 15 14 13 12 20.000 11 10 9 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)

P_Gain Efficiency

50.000 40.000 30.000

Current(mA)

400 300 200 100

10.000
0

0.000

14

17

20

23

26

29

32

35

38

41

Output Power(dBm)
Current

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3

TG520-10

Preliminary

GaN Hybrid Amplifier

Vdd=28V@320MHz
18 17 16 Power Gain(dB) 15 14 13 12 11 10 9 8 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
P_Gain Efficiency

Vdd=28V@320MHz
70.000 60.000 50.000
Current(mA) 700 600 500 400 300 200 100 0 11 14 17 20 23 26 29 32 35 38 41

40.000 30.000 20.000 10.000 0.000

Output Power(dBm) Current

Vdd=28V@420MHz
17 16 15 Power Gain(dB) 14 13 12 11 10 9 8 7 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
P_Gain Efficiency

Vdd=28V@420MHz
70.000 60.000 50.000 40.000 30.000 20.000 10.000 0.000
100 Current(mA) 400 600

500

300

200

0 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
Current

Vdd=28V@520MHz
17 16 60.000 15 14 Power Gain(dB) 13 12 11 10 9 10.000 8 7 8 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
P_Gain Efficiency

Vdd=28V@520MHz
70.000
700 600 500 Current(mA) 400 300 200 100 0 8 11 14 17 20 23 26 29 32 35 38 41 Output Power(dBm)
Current

50.000 40.000 30.000 20.000

0.000

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3

TG520-10
Part Number TG520-10 Release Date 20101117

Preliminary

GaN Hybrid Amplifier

Document Revision History

Version 0.3 Specifications: - improved typical Power Gain(@P1dB) from 11dB to 16dB - changed max Frequency from 550MHz to 520MHz - added Load Mismatch Value 5:1 @ all load phase - added Recommended Pattern diagram TG520-10 20100908 0.2 Part number changed from TG520-08-10 to TG520-10 Specifications: deleted 38dBm min of Output P1dB Specifications: deleted 39dBm min of Output P3dB Specifications: changed typical output P3dB from 39.5dBm to 40dBm Specifications: added 600mA typical for Ids TG520-08-10 20100805 0.1 --Preliminary Preliminary Modification Data Sheet Status Preliminary

Ordering Information
No 1 2 Part Number TG520-10 TG520-10-EVB-kit Description 520MHz power amplifier module of 16dB Power Gain 520MHz power amplifier module of 16dB Power Gain attached on evaluation board with heat sink

* Electrical parameters of TG520-10-EVB-kit are all same as TG520-10. For more information, please contact RFHIC.

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3

TG520-10

Preliminary

GaN Hybrid Amplifier

Block Diagram (Type: CP-6C)

Input Matching Circuit Vgg(-V) Output Matching Circuit

Input

Output

Vdd(+V)

Package Dimensions (Type: CP-6C)

No
1

Description
RF Input GND GND Gate Bias (-V) GND Drain Bias (+V)

No
7 8 9 10 11 12

Description
GND GND RF Output GND GND GND

! ESD sensitive
Observe precautions for handling, testing and packaging.

Recommended Pattern

2 3 4 5 6

RFHICUSA Corporation (RFHICUSA) reserves the right to make changes to any products herein or to discontinue any product at any time without notice. RFHICUSA do not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. The product specifications herein expressed have been carefully checked and are assumed to be reliable. However, RFHICUSA disclaims liability for inaccuracies and strongly recommends buyers to verify that the information they are using is current before placing purchase orders. RFHICUSA products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHICUSA and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such use. RFHICUSAs liability under or arising out of damages, claims of whatsoever kind and nature which RFHICUSA products could cause shall be limited in amount to the net purchase price of the products sold to buyer by RFHICUSA.

Tel : 919-342-6477 sales@rfhicusa.com

All specifications may change without notice. Version 0.3