4N35/4N36/4N37/4N38

Vishay Semiconductors

Optocoupler, Phototransistor Output, with Base Connection

FEATURES
Isolation test voltage 5300 VRMS
A C NC
i179004

1 2 3

6 B 5 C 4 E

Interfaces with common logic families Input-output coupling capacitance < 0.5 pF Industry standard dual-in-line 6 pin package Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

DESCRIPTION
This data sheet presents five families of Vishay Industry Standard Single Channel Phototransistor Couplers.These families include the 4N35/4N36/4N37/ 4N38 couplers. Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. These couplers are Underwriters Laboratories (UL) listed to comply with a 5300 VRMS isolation test voltage. This isolation performance is accomplished through Vishay double molding isolation manufacturing process. Comliance to DIN EN 60747-5-5 partial discharge isolation specification is available for these families by ordering option 1. These isolation processes and the Vishay ISO9001 quality program results in the highest isolation performance available for a commecial plastic phototransistor optocoupler. The devices are available in lead formed configuration suitable for surface mounting and are available either on tape and reel, or in standard tube shipping containers.
Note: For additional design information see application note 45 normalized curves

APPLICATIONS
AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection

AGENCY APPROVALS
Underwriters laboratory file #E52744 DIN EN 60747-5-5 available with option 1

ORDER INFORMATION
PART 4N35 4N36 4N37 4N38 4N35-X006 4N35-X007 4N35-X009 4N36-X007 4N36-X009 4N37-X006 4N38-X009 Note For additional information on the available options refer to option information. REMARKS CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 100 %, DIP-6 CTR > 20 %, DIP-6 CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, SMD-6 (option 7) CTR > 100 %, SMD-6 (option 9) CTR > 100 %, DIP-6 400 mil (option 6) CTR > 100 %, SMD-6 (option 9)

Document Number: 83717 Rev. 1.5, 07-May-08

For technical questions, contact: optocoupler.answers@vishay.com

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4N35/4N36/4N37/4N38
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
ABSOLUTE MAXIMUM RATINGS
PARAMETER INPUT Reverse voltage Forward current Surge current Power dissipation OUTPUT Collector emitter breakdown voltage Emitter base breakdown voltage Collector current Power dissipation COUPLER Isolation test voltage Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index Isolation resistance Storage temperature Operating temperature Junction temperature Soldering temperature max.10 s dip soldering: distance to seating plane 1.5 mm DIN IEC 112/VDE 0303, part 1 VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C RIO RIO Tstg Tamb Tj Tsld VISO 5300 7 7 0.4 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C VRMS mm mm mm t 1 ms VCEO VEBO IC IC Pdiss 70 7 50 100 150 V V mA mA mW t 10 s VR IF IFSM Pdiss 6 60 2.5 100 V mA A mW TEST CONDITION SYMBOL VALUE UNIT

Note Tamb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS (1)

PARAMETER INPUT Junction capacitance Forward voltage(2) Reverse current(2) Capacitance OUTPUT 4N35 Collector emitter breakdown voltage(2) Emitter collector breakdown voltage(2) IC = 1 mA 4N36 4N37 4N38 IE = 100 A BVCEO BVCEO BVCEO BVCEO BVECO 30 30 30 80 7 V V V V V VR = 0 V, f = 1 MHz IF = 10 mA IF = 10 mA, Tamb = - 55 C VR = 6 V VR = 0 V, f = 1 MHz Cj VF VF IR CO 0.9 50 1.3 1.3 0.1 25 1.5 1.7 10 pF V V A pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

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Document Number: 83717 Rev. 1.5, 07-May-08

4N35/4N36/4N37/4N38
Optocoupler, Phototransistor Output, with Base Connection
ELECTRICAL CHARACTERISTICS (1)
PARAMETER OUTPUT 4N35 Collector base breakdown voltage(2) IC = 100 A, IB = 1 A 4N36 4N37 4N38 VCE = 10 V, IF = 0 VCE = 10 V, IF = 0 VCE = 60 V, IF = 0 Collector emitter leakage current(2) VCE = 30 V, IF = 0, Tamb = 100 C VCE = 60 V, IF = 0, Tamb = 100 C Collector emitter capacitance COUPLER Resistance, input output(2) Capacitance, input output VIO = 500 V f = 1 MHz RIO CIO 1011 0.5 pF VCE = 0 4N35 4N36 4N37 4N38 4N35 4N36 4N37 4N38 BVCBO BVCBO BVCBO BVCBO ICEO ICEO ICEO ICEO ICEO ICEO ICEO ICEO CCE 6 6 70 70 70 80 5 5 5 50 50 50 50 500 500 500 V V V V nA nA nA nA A A A A pF TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Vishay Semiconductors

Notes (1) T amb = 25 C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value.

CURRENT TRANSFER RATIO

PARAMETER TEST CONDITION VCE = 10 V, IF = 10 mA VCE = 10 V, IF = 20 mA VCE = 10 V, IF = 10 mA, TA = - 55 to + 100 C PART 4N35 4N36 4N37 DC current transfer ratio(1) 4N38 4N35 4N36 4N37 4N38 Note (1) Indicates JEDEC registered values. SYMBOL CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC MIN 100 100 100 20 40 40 40 50 50 50 30 TYP. MAX UNIT % % % % % % % %

SWITCHING CHARACTERISTICS
PARAMETER Switching time(1)
(1)

TEST CONDITION VCC = 10 V, IC = 2 mA, RL = 100

SYMBOL ton, toff

MIN.

TYP. 10

MAX.

UNIT s

Note Indicates JEDEC registered values.

Document Number: 83717 Rev. 1.5, 07-May-08

For technical questions, contact: optocoupler.answers@vishay.com

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4N35/4N36/4N37/4N38
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
TYPICAL CHARACTERISTICS
Tamb = 25 C, unless otherwise specied

1.4 TA = - 55 C TA = 25 C

1.5

1.2 1.1 1.0 0.9 0.8 0.7 0.1 1 10 100 TA = 85 C

NCTR - Normalized CTR

VF -Forward Voltage (V)

1.3

Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 70 C

0.5 NCTR(SAT) NCTR 0.0 0.1

i4n25_04

10

100

i4n25_01

IF - Forward Current (mA)

IF - LED Current (mA)

Fig. 1 - Forward Voltage vs. Forward Current

Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. LED Current

1.5

NCTR - Normalized CTR

1.0 TA = 25 C

NCTR - Normalized CTR

Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) = 0.4 V

1.5 Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 85 C

0.5 NCTR(SAT) NCTR 0.0 0 1 10 100

0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100

i4n25_02

IF - LED Current (mA)

i4n25_05

IF - LED Current (mA)

Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. LED Current

Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. LED Current

1.5

ICE - Collector Current (mA)

NCTR - Normalized CTR

Normalized to: VCE = 10 V, IF = 10 mA, TA = 25 C CTRCE(sat) VCE = 0.4 V 1.0 TA = 50 C

35 30 25 20 15 25 C 10 5 0 85 C 70 C 50 C

0.5 NCTR(SAT) NCTR 0.0 0.1 1 10 100

0
i4n25_06

10

20

30

40

50

60

i4n25_03

IF - LED Current (mA)

IF - LED Current (mA)

Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. LED Current www.vishay.com 156

Fig. 6 - Collector Emitter Current vs. Temperature and LED Current Document Number: 83717 Rev. 1.5, 07-May-08

For technical questions, contact: optocoupler.answers@vishay.com

4N35/4N36/4N37/4N38
Optocoupler, Phototransistor Output, with Base Connection

Vishay Semiconductors

105

1.2

70 C

ICEO - Collector Emitter (nA)

10

NhFE - Normalized hFE

1.0 25 C - 20 C 0.8 Normalized to: IB = 20 A, VCE = 10 V, TA = 25 C

103 10
2

VCE = 10 V 101 100 10

-1

Typical

0.6

10- 2 - 20
i4n25_07

0.4 0 20 40 60 80 100 1
i4n25_10

10

100

1000

Tamb- Ambient Temperature (C)

Ib - Base Current (A)

Fig. 7 - Collector Emitter Leakage Current vs. Temperature

Fig. 10 - Normalized Non-Saturated hFE vs. Base Current and Temperature

NhFE(sat) - Normalized Saturated hFE

1.5

1.5 Normalized to: VCE = 10 V, Ib = 20 A TA = 25 C

NCTRcb - Normalized CTRcb

Normalized to: VCB = 9.3 V, IF = 10 mA, TA = 25 C 1.0

70 C 50 C 1.0 25 C - 20 C 0.5 VCE = 0.4 V 0.0 1

i4n25_11

0.5 25 C 50 C 70 C 0.0 0.1 1 10 100

10

100

1000

i4n25_08

IF - LED Current (mA)

Ib - Base Current (A)

Fig. 8 - Normalized CTRcb vs. LED Current and Temperature

Fig. 11 - Normalized hFE vs. Base Current and Temperature

10

1000

2.5

tPLH- Propagation Delay (s)

Normalized Photocurrent

Normalized to: IF = 10 mA, TA = 25 C 1

tPHL 100

2.0

1 0. Nib, TA = - 20 C Nib, TA = 20 C Nib, TA = 50 C Nib, TA = 70 C 0.01 0.1 1 10 100

10 tPLH

1.5

1 0.1
i4n25_12

10

1.0 100

i4n25_09

IF - LED Current (mA)

RL - Collector Load Resistor (k)

Fig. 9 - Normalized Photocurrent vs. IF and Temperature

Fig. 12 - Propagation Delay vs. Collector Load Resistor

Document Number: 83717 Rev. 1.5, 07-May-08

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tPHL - Propagation Delay (s)

IF = 10 mA, TA = 25 C VCC = 5.0 V, Vth = 1.5 V

4N35/4N36/4N37/4N38
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection

IF

VCC = 5.0 V F = 10 kHz DF = 50 % tD

RL VO

VO

tR tPLH VTH = 1.5 V tPHL tS tF

i4n25_14

IF = 10 mA

i4n25_13

Fig. 13 - Switching Timing

Fig. 14 - Switching Schematic

PACKAGE DIMENSIONS in millimeters (inches)

For 4N35/36/37/38..... see DIL300-6 Package dimension in the Package Section. For products with an option designator (e.g. 4N35-X006 or 4N36-X007)..... see DIP-6 Package dimensions in the Package Section. DIL300-6 Package Dimensions
8.8 max. 7.62 0.1 0.3 A 4.2 0.1 8.6 max. B 6.4 max. 0.5 min. 3.3 0.58 max. 1.54 2.54 nom. A 6 5 4 5.08 nom. Weight: ca. 0.50 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board
0.3 max.

9 0.6

0.4 B

technical drawings according to DIN specifications

14770

1 2 3

DIP-6 Package Dimensions

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4N35/4N36/4N37/4N38
Optocoupler, Phototransistor Output, with Base Connection
3 2 1 Pin one ID

Vishay Semiconductors

0.248 (6.30) 0.256 (6.50)

ISO method A

0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 (0.45) 0.300 (7.62) typ.

0.022 (0.55) 0.130 (3.30) 0.150 (3.81)

4 typ. 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.022 (0.55) 0.100 (2.54) typ.
i178004

18 0.114 (2.90) 0.130 (3.0) 3 to 9 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81)

0.035 (0.90)

Option 6
0.407 (10.36) 0.391 (9.96) 0.307 (7.8) 0.291 (7.4)

Option 7
0.300 (7.62) typ.

Option 9
0.375 (9.53) 0.395 (10.03 ) 0.300 (7.62) ref.

0.028 (0.7)

0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min.

0.0040 (0.102) 0.0098 (0.249) 0.020 (0.51 ) 0.040 (1.02 ) 0.315 (8.00) min.

0.012 (0.30 ) typ.

0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92)

0.331 (8.4) min. 0.406 (10.3) max.

15 max.

18450

Document Number: 83717 Rev. 1.5, 07-May-08

For technical questions, contact: optocoupler.answers@vishay.com

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4N35/4N36/4N37/4N38
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

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Document Number: 83717 Rev. 1.5, 07-May-08

Legal Disclaimer Notice

Vishay

Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 Revision: 18-Jul-08

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