Philips Semiconductors

Product specification

Triacs sensitive gate

GENERAL DESCRIPTION
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

BT136 series E

QUICK REFERENCE DATA

SYMBOL VDRM IT(RMS) ITSM PARAMETER BT136Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. 600E 600 4 25 MAX. 800E 800 4 25 UNIT V A A

PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1

PIN CONFIGURATION
tab

SYMBOL

T2
main terminal 2 gate main terminal 2
1 23

T1

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb 107 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -600 6001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 MAX. -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C

I2t dIT/dt

IGM VGM PGM PG(AV) Tstg Tj

Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature

over any 20 ms period

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. June 2001 1 Rev 1.400

Philips Semiconductors

Product specification

Triacs sensitive gate

THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -

BT136 series E

TYP. 60

MAX. 3.0 3.7 -

UNIT K/W K/W K/W

Thermal resistance full cycle junction to mounting base half cycle Thermal resistance in free air junction to ambient

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.0 10 2.5 4.0 2.2 1.4 0.7 0.4 0.1 MAX. 10 10 10 25 15 20 15 20 15 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA

IL

Latching current

VD = 12 V; IGT = 0.1 A

IH VT VGT ID

Holding current On-state voltage Gate trigger voltage Off-state leakage current

VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. TYP. 50 2 MAX. UNIT V/s s

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs sensitive gate

BT136 series E

8 7 6 5 4 3 2 1 0

Ptot / W

Tmb(max) / C

101 104

IT(RMS) / A

= 180 120 90 60 30

107 110 113 116 119

107 C

1
122 0 1 2 3 IT(RMS) / A 4 125 5

0 -50

50 Tmb / C

100

150

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle.

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
IT(RMS) / A

1000

ITSM / A IT T ITSM

12 10
time

Tj initial = 25 C max 100 dIT /dt limit

8 6 4

T2- G+ quadrant

2
10 10us

100us

1ms T/s

10ms

100ms

0 0.01

0.1 1 surge duration / s

10

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms.

Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 107C.
VGT(Tj) VGT(25 C)

30 25 20 15 10 5 0

ITSM / A

BT136

1.6
IT T I TSM time

1.4 1.2 1 0.8 0.6 0.4 -50

Tj initial = 25 C max

10 100 Number of cycles at 50Hz

1000

50 Tj / C

100

150

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs sensitive gate

BT136 series E

3 2.5 2 1.5 1 0.5

IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+

12 10

IT / A Tj = 125 C Tj = 25 C
Vo = 1.27 V Rs = 0.091 ohms

typ

max

8 6 4 2 0

0 -50

50 Tj / C

100

150

0.5

1.5 VT / V

2.5

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj.
IL(Tj) IL(25 C)

Fig.10. Typical and maximum on-state characteristic.

10

Zth j-mb (K/W) unidirectional bidirectional

3 2.5

2 1.5 1 0.5 0 -50

0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1
P D tp

50 Tj / C

100

150

10s

Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj.
IH(Tj) IH(25C)

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dVD/dt (V/us)

1000

3 2.5 2 1.5 1 0.5

100

10

0 -50

50 Tj / C

100

150

50 Tj / C

100

150

Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj.

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs sensitive gate

MECHANICAL DATA
Dimensions in mm Net Mass: 2 g

BT136 series E

4,5 max 10,3 max

1,3

3,7 2,8
5,9 min

15,8 max

3,0 max not tinned

3,0

13,5 min
1,3 max 1 2 3 (2x)
2,54 2,54

0,9 max (3x)

0,6 2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8".

June 2001

Rev 1.400

Philips Semiconductors

Product specification

Triacs sensitive gate

BT136 series E

DEFINITIONS
DATA SHEET STATUS DATA SHEET STATUS2 Objective data PRODUCT STATUS3 Development DEFINITIONS This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

Preliminary data

Qualification

Product data

Production

Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. June 2001 6 Rev 1.400

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