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Professor: Vivek Subramanian viveks@eecs.berkeley.edu 571 Cory Hall (510) 643-4535 Alejandro de la Fuente Vornbrock, adelafv@eecs.berkeley.edu
TA:
An Important Note Professor Subramanian is in Japan today, and will return tomorrow. He apologizes for not being here. Regular lectures will begin on Thursday
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Schedule
Lectures: 299 Cory, Tue/Thu, 2pm-3:30pm Discussion:
Section 101 Monday, 5pm-6pm 299 Cory
Office Hours:
Vivek Subramanian (571 Cory):
Tue 9:30am-10:30am (EE231 Priority) Tue 1pm-2pm (EE143 Priority) Th 9:30am-10:30am (EE143 + EE231)
Reading Material
Primary Text:
Silicon Processing for the VLSI Era, Vol. 3 - The submicron MOSFET S.Wolf Lattice Press, 1995
Reference Texts:
Fundamental of Modern VLSI devices Y. Taur, T. Ning Cambridge University Press, 1998 Device Electronics for Integrated Circuits R. S. Muller and T. I. Kamins Wiley
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Grading
Midterm design project
MOSFET design, assigned in Mar/April (~2 week duration) You must work alone
20% Letter grades will be assigned based approximately on the following scale: A+: 95-100 A: 88-95 A-: 85-88 B+: 80-85 B: 73-80 B-: 68-73 C+: 65-68 C: 60-65 C-: 55-60 D: 40-55 F: <40
Tests (~3-4)
~45 minutes each given periodically per schedule Open book and notes No makeups
50%
Final Paper
Will be assigned approx. 3 weeks before end of class Due on last day of class
30%
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Text Coverage
The text will serve primarily as a reference (i.e., notes supercede text)
Chapter 3. MOS Capacitor
3.2 Qualitative description 3.3 Quantitative analysis of Qs(Vs) 3.4 VT 3.5 Charge Traps 3.6 VT 3.7 Optional reading
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Text Coverage
Chapter 4. Long Channel MOSFET
4.1 Introduction 4.2-4.5.2 Omit pages 137-169. 4.5.3-4.5.6 IV models of decreasing accuracy and complexity. 4.6 VT Control by Ion Implantation. Omit 4.6.4 4.7 Subthreshold Current
Text Coverage
Chapter 8. CMOS Well Technology (assigned reading)
8.1 N-well, P-well and Twin-well 8.4 High-energy implant
Introduction to Process and Device Simulation: Using TSUPREM4 and Medici In this class, you will make extensive use of process and device simulation in your projects and term papers. Therefore, it is imperative that you learn to make use of these tools ASAP
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Logistics You will need an account on either the instructional machines (cory, mingus, etc., open to all students in EE231) or the device cluster (open only to device group students) If you need an instructional account, go to: http://www-inst.eecs.berkeley.edu and follow the instructions to obtain an account
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Why Simulation? Process (TSuprem4) and device (Medici) simulators are indispensable tools in the device community Simulators provide insight on processing steps, device physics, feedback in device design, and are important areas of research Simulation does not replace design!!!
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Design Flow
Feedback Feedback Device design NA, tox, W, L, Vt, etc. Device Physics Feedback
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TSUPREM-4
Simulates all major process steps in 2-D Deposition Implant Oxidation Diffusion Lithography Etc. Analytical and empirical models are used to predict device cross-sections and doping profiles
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MEDICI
Simulates electrical characteristics of a given 2-D device structure Takes voltage bias at each electrode Program solves Poissons equation to determine the potential distribution in a device Applies various models for carrier transport to determine the current at each terminal
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Getting started
TSUPREM4 and MEDICI both take a text file as input Outputs text that is piped to the terminal Output includes simulation information and user-specified data (plots, cross-sections, values, etc.) bcpmoss4.out
bcpmoss4.in
Getting started
Use text editor to create decks (vi, emacs, pico) Simulators are run off UNIX workstation or PC with Hummingbird
https://inst.eecs.berkeley.edu/cgi-bin/pub.cgi?file=tcad.help
/share/b/bin/tsuprem4 Set path = ( $path /share/b/bin) For device group computers: /project/eecs/device-apps/synopsys/Y_2006.06/bin LM_LICENSE_FILE=27000@cory Pop up windows: setenv DISPLAY [ip_address_or_computer_name] % tsuprem4 [input_file_name]
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Plot generation
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Simulator Manuals
TSuprem and Medici Manuals are valuable resource for Input Statements and Examples
http://www-device.eecs.berkeley.edu/~chl/
/project/eecs/device-apps/synopsys/Y_2006.06/taurus-[medici or tsuprem4]/manuals_pdf
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Oxidation
Field Oxide
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Grid Structure
Divides the device cross-section into a 2-D array of discrete grid points Necessary for SUPREM and MEDICI to calculate solutions A finer grid is more accurate but also increases simulation time
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Grid spacing can be varied spatially: Line Eliminate Boundary Region Grids can also be defined with saved structure files
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