Texas Advanced Optoelectronic Solutions Inc.: Description

t
TSL250R, TSL251R, TSL252R LIGHT TO VOLTAGE OPTICAL SENSORS

t TAOS028A MAY 2001
D Monolithic Silicon IC Containing D D D D D D D D

Photodiode, Operational Amplifier, and Feedback Components Converts Light Intensity to a Voltage High Irradiance Responsivity, Typically 137 mV/(mW/cm2) at lp = 635 nm (TSL250R) Compact 3-Lead Clear Plastic Package Single Voltage Supply Operation Low Dark (Offset) Voltage....10mV Max Low Supply Current......1.1 mA Typical Wide Supply-Voltage Range.... 2.7 V to 5.5 V Replacements for TSL250, TSL251, and TSL252
PACKAGE (FRONT VIEW)
GND VDD
OUT
Description
The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 M, 8 M, and 2.8 M respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. These devices have improved amplifier offset-voltage stability and low power consumption and are supplied in a 3-lead clear plastic sidelooker package with an integral lens
Functional Block Diagram
Voltage Output
Terminal Functions
TERMINAL NAME GND OUT VDD NO. 1 3 2 Output voltage Supply voltage DESCRIPTION Ground (substrate). All voltages are referenced to GND.
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Texas Advanced Optoelectronic Solutions Inc.

800 Jupiter Road, Suite 205 S Plano, TX 75074 S (972) 673-0759
t
Copyright E 2001, TAOS Inc.

TAOS028A MAY 2001
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Duration of short-circuit current at (or below) 25C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C to 85C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25C to 85C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltages are with respect to GND. 2. Output may be shorted to supply.
Recommended Operating Conditions

MIN Supply voltage, VDD Operating free-air temperature, TA 2.7 0 NOM MAX 5.5 70 UNIT V C
Electrical Characteristics at VDD = 5 V, TA = 25C, p = 635 nm, RL = 10 k (unless otherwise noted) (see Notes 3, 4, and 5)
PARAMETER VD VOM Dark voltage Maximum output voltage TEST CONDITIONS Ee = 0 VDD = 4.5 V Ee = 14.6 W/cm2 VO Out ut Output voltage Ee = 38.5 W/cm2 Ee = 196 W/cm2 1.6 0.08 1.6 0.08 1.6 0.08 137 127 1.1 1.7 1.1 1.7 1.1 1.7 mA 52 48 10.2 mV/(W/cm mV/( W/cm2) 9.4 Ee = 14.6 W/cm2, TA = 0C to 70C Ee = 38.5 W/cm2, TA = 0C to 70C Ee = 196 TA = 0C to 70C W/cm2, TSL250R MIN 0 3.0 1.5 TYP 4 3.3 2 2.5 1.5 2 2.5 1.5 2 2.5 mV/C %/C mV/C %/C mV/C %/C V MAX 10 MIN 0 3.0 TSL251R TYP 4 3.3 MAX 10 MIN 0 3.0 TSL252R TYP 4 3.3 MAX 10 UNIT mV V
vo
Temperature coefficient of output voltage g (VO)
Ne
Irradiance responsivity
p = 635 nm, See Notes 5 and 7 p = 880 nm, See Notes 6 and 7 Ee = 14.6 W/cm2 W/cm2
IDD
Supply current y
Ee = 38.5
Ee = 196 W/cm2 NOTES: 3. 4. 5. 6. 7.
Measurements are made with RL = 10 k between output and ground. Optical measurements are made using small-angle incident radiation from an LED optical source. The input irradiance Ee is supplied by an AlInGaP LED with peak wavelength p = 635 nm The input irradiance Ee is supplied by a GaAlAs LED with peak wavelength p = 880 nm Irradiance responsivity is characterized over the range VO = 0.05 to 2.9 V. The best-fit straight line of Output Voltage VO versus irradiance Ee over this range will typically have a positive extrapolated VO value for Ee = 0.
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TAOS028A MAY 2001
Dynamic Characteristics at TA = 25C (see Figure 1)

TSL250R PARAMETER tr tf Vn Output pulse rise time Output pulse fall time Output noise voltage TEST CONDITIONS VDD = 5 V, VDD = 5 V, VDD = 5 V, f = 1000 Hz p = 635 nm p = 635 nm Ee = 0, MIN TYP 260 260 0.8 MAX MIN TSL251R TYP 70 70 0.7 MAX MIN TSL252R TYP 7 7 0.6 MAX UNIT s s V/Hz
PARAMETER MEASUREMENT INFORMATION

VDD Pulse Generator LED (see Note A) TSL25xR 1 TEST CIRCUIT + RL Output (see Note B) 10% 90% 90% 10% 2 Ee Input 3 Output tr tf
VOLTAGE WAVEFORM
NOTES: A. The input irradiance is supplied by a pulsed AlInGaP light-emitting diode with the following characteristics: p = 635 nm, tr < 1 s, tf < 1 s. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr < 100 ns, Zi 1 M, Ci 20 pF.
Figure 1. Switching Times
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TAOS028A MAY 2001
TYPICAL CHARACTERISTICS
OUTPUT VOLTAGE vs IRRADIANCE
10 V = 5 V DD p = 635 nm RL = 10 kW TA = 25C VO Output Voltage V 1 1.2 TSL251R 1
PHOTODIODE SPECTRAL RESPONSIVITY

TA = 25C Normalized to 635 nm
Relative Responsivity
0.8
0.6
TSL250R 0.1
TSL252R
0.4
0.2
0.01 0.1
1 10 Ee Irradiance W/cm2
100
0 300
500
700 900 Wavelength nm
1100
Figure 2
MAXIMUM OUTPUT VOLTAGE vs SUPPLY VOLTAGE
5 VOM Maximum Output Voltage V RL = 10 k TA = 25C I DD Supply Current mA 4 1.4 1.6 VDD = 5 V RL = 10 kW TA = 25C
Figure 3
SUPPLY CURRENT vs OUTPUT VOLTAGE
1.2
0.8
0 2.5
4 4.5 3.5 VDD Supply Voltage V
5.5
0.6 0 1 2 3 VO Output Voltage V 4
Figure 4
Figure 5
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TAOS028A MAY 2001
TYPICAL CHARACTERISTICS
NORMALIZED OUTPUT VOLTAGE vs ANGULAR DISPLACEMENT
1
0.8 VO Normalized Output Voltage TSL252R TSL251R 0.6 TSL250R
0.4
0.2
0 80
60
40 20 0 20 40 Angular Displacement
Optical Axis
60
80
Figure 6
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TAOS028A MAY 2001
MECHANICAL INFORMATION
The device is supplied in a clear plastic three-lead package. The integrated photodiode active area is typically 1,0 mm2 (0.0016 in2) for TSL250R, 0,5 mm2 (0.00078 in2) for the TSL251R, and 0,26 mm2 (0.0004 in2) for the TSL252R.
0.189 (4,80) 0.173 (4,40) 0.165 (4,20) 0.150 (3,80) 0.071 (1,80) 0.072 (1,84) 0.057 (1,44) 0.032 (0,80) 0.016 (0,40) R 0.035 (0,90) 0.071 (1,8) 0.110 (2,80) 0.189 (4,80) 0.173 (4,40)
0.016 (0,40)
0.079 (2,00) 0.039 (1,00)
0.029 (0,75) 0.102 (2,6)
0.027 (0,70)
0.026 (0,65) 0.630 (16,00) 0.531 (13,50)
0.018 (0,45)
0.079 (2,00) 0.079 (2,00)
0.018 (0,45)
Figure 7. Package Configuration

NOTES: A. B. C. D. E. All linear dimensions are in inches (millimeters). This drawing is subject to change without notice. All dimensions apply before solder dip. Package body is a clear nonfilled optically transparent material Index of refraction of clear plastic is 1.55.
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TAOS028A MAY 2001
PRODUCTION DATA information in this document is current at publication date. Products conform to specifications in accordance with the terms of Texas Advanced Optoelectronic Solutions, Inc. standard warranty. Production processing does not necessarily include testing of all parameters.
NOTICE
Texas Advanced Optoelectronic Solutions, Inc. (TAOS) reserves the right to make changes to the products contained in this document to improve performance or for any other purpose, or to discontinue them without notice. Customers are advised to contact TAOS to obtain the latest product information before placing orders or designing TAOS products into systems. TAOS assumes no responsibility for the use of any products or circuits described in this document or customer product design, conveys no license, either expressed or implied, under any patent or other right, and makes no representation that the circuits are free of patent infringement. TAOS further makes no claim as to the suitability of its products for any particular purpose, nor does TAOS assume any liability arising out of the use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS, INC. PRODUCTS ARE NOT DESIGNED OR INTENDED FOR USE IN CRITICAL APPLICATIONS IN WHICH THE FAILURE OR MALFUNCTION OF THE TAOS PRODUCT MAY RESULT IN PERSONAL INJURY OR DEATH. USE OF TAOS PRODUCTS IN LIFE SUPPORT SYSTEMS IS EXPRESSLY UNAUTHORIZED AND ANY SUCH USE BY A CUSTOMER IS COMPLETELY AT THE CUSTOMERS RISK.
TAOS, the TAOS logo, and Texas Advanced Optoelectronic Solutions are trademarks of Texas Advanced Optoelectronic Solutions Incorporated.
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TAOS028A MAY 2001
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t

TSL250R, TSL251R, TSL252R LIGHT TO VOLTAGE OPTICAL SENSORS

D Monolithic Silicon IC Containing D D D D D D D D

PACKAGE (FRONT VIEW)

Functional Block Diagram