Diode Reverse Recovery and its Effect on Switching Losses

Peter Haaf, Senior Field Applications Engineer Jon Harper, Market Development Manager November 2006

www.fairchildsemi.com

Agenda

Basics Mathematical Estimations Comparison of the Estimations with real measurements Switching Losses vs. Voltage Switching Losses vs. Current EON Losses during Hard Switching with different Diode Technologies 7. Effect of parallel Caps on Switching Losses 8. Switching Losses vs. rise and fall time 9. Summary

1. 2. 3. 4. 5. 6.

Diode charge distribution in conducting and non-conducting states

Minority carrier concentration near the junction Electron concentration in P-type region Hole concentration in N-type region

Minority carrier concentration near the junction

Hole Electron concentration concentration in N-type region in P-type region

x=0

x=0

P-type

N-type

P-type

N-type

Diode conducting

Diode blocking

Diode Forced Commutation Behavior

Step 1: Switch is turned on Current rises
DC Bus

IL 2 VDD 1
Switch

IDIODE VDIODE + 3 + VSWITCH ISWITCH

Step 2: Switch is turned off Current is circulating Step 3: Switch is turned on again, Diode is recovering and current continues rising

Reference GND

Switching loss calculations

Definition of Power Losses

P = 1/T* V(t) * I(t) dt = mean (V(t) * I(t)) E =P*t = V(t) * I(t) dt = area (V(t) * I(t)) Pon = EON * f ; Poff = EOFF * f

I V

t
E=(1/2)*V*I*t E=(1/3)*V*I*t E=(1/6)*V*I*t

Turn On Loss Due to Diode Recovery (Phase tR)

VCE

IC dIC/dt

IRRM

IL assumed constant during switching time

Eon1
tA tB tF

Vout * I L * t R 2

with

dI/dt = IL / tR = Vout * I L2 2 * dI/dt

dIF/dt IF VF

Eon1
IRRM tR

switching time: tR+tA+tB

t1 t2 t3 VRM

t = t0 IGBT turns on

t0

Turn On Loss Due to Diode Recovery (Phase tA)

VCE

IC dIC/dt

IRRM

IL assumed constant during switching time

I E on2 = Vout * I L + RRM * t A 2

tA tB tF

with

I RRM dI/dt = tA

dIF/dt IF VF

dt I 2 E on2 = Vout* I L* RRM + IRRM * 2 2 *dI

IRRM switching time: tR+tA+tB

tR

t = t0 IGBT turns on
t0 t1 t2 t3 VRM

Turn On Loss Due to Diode Recovery (Phase tB)

VCE

IC dIC/dt

IRRM

IL assumed constant during switching time

E on3
tA tB tF

I I = Vout * L + RRM * t B 3 2

tF = tB
dIF/dt IF VF

switching time:

tR+tA+tB

IRRM At t=to IGBT turns on t0 tR t1 t2 t3 VRM

Diodeloss

Vout * I RRM * t B = 6

Double check of the formulas: Eon calculation vs. measurement

VCE

EON

Ic = 4 A

Eon = Eon1 = Eon2 = Eon3 = Diode: Eoff =

32.67 uJ 11.20 uJ 14.00 uJ 7.47 uJ

Pon = Pon = Pon = Pon =

1.63 W 0.56 W 0.70 W 0.37 W

50 (kHz) 4 (A) 280.00 (V) 2.00E+08 (A/s) 2 (A) 1.00E-08 (s)

Frequency Current Udc dI/dt Irr; Diode tf fall time

9.33E-01 uJ

Poff =

0.05 W
9

8A Stealth II versus Stealth comparison

Loss calculation 25 C and 125 C
FFP08S60S Specification TC=25C tA / ns (typ) tB / ns (typ) IRRM / A (typ) QRR / nC (typ) Switch losses example calculation / J VF / V (typical) 11.9 7.1 2.2 21 118 2.1 TC=125C 25.2 32.8 4.3 125 232 1.6 TC=25C 16.4 60.6 3.4 150 246 2.0 TC=125C 15.1 37.9 6.5 190 220 1.6 ISL9R860P2

Measured with di/dt=200A/us, see datasheets for full details Example: Loss in switch for 8A, di/dt=200A/us, VDD=390V Equations in Power Seminar 2007 documentation

10

8A Stealth II versus Stealth comparison

Loss calculation 75 C and 100 C
FFP08S60S Specification TC=75C tA / ns (typ) tB / ns (typ) IRRM / A (typ) Switch losses example calculation / J VF / V (typical) Switching loss @ 100 kHz / W 18.5 20 3.3 172 1.85 17.2 TC=100C 21.9 26.4 3.8 201 1.725 20.1 TC=75C 15.8 49.2 5.0 235 1.8 23.5 TC=100C 15.5 43,5 5.7 228 1.7 22.8 ISL9R860P2

Calculated with di/dt=200A/us, see datasheets for full details Example: Loss in switch for 8A, di/dt=200A/us, VDD=390V Equations in Power Seminar 2007 documentation Linear approximation: of ta, tb, Irrm and Vf

6.3 W difference on switching losses

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8A Stealth II versus Stealth comparison

Loss measurements
FFP08S60S ISL9R860P2

Vds:100V/div

Idiode:2A/div

Vds:100V/div

Idiode:2A/div

Vdiode:100V/div Id:2A/div Eon : 106.2uJ Id:2A/div

Vdiode:100V/div Eon : 129.2uJ

20ns/div

20ns/div 20ns/div 20ns/div

DUTs ISL9R860P2 FFP08S60S

Ta 26.2 26.2

TMOSFET 120.2 113.3

Tdiode 76.7 70.1

dTMOSFET dTdiode 94.0 87.1 50.5 43.9

Pin 431.2 426.0

Vout 401.240 401.240

Iout 0.984 0.984

Pout 394.70 394.70

Efficienccy 91.54 92.65

PF 0.999 0.999

Test condii : Vi ton n=220Vac, P out =400V/1A(400W ), Fs=100kHz

5.2 W difference in input power

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Test circuits

Ids Vds

Ids Vds

Test Circuits which are used for the following measurements

13

Waveforms and loss definition

Switch off losses

Switch on losses

td off: 90 % Vge => 90 % Ice tf: 90 % Ice => 10 % Ice td on: 10 % Vge = > 10 % Ice tr: 10 % Ice => 90 % Ice
14

Switching Losses vs. Voltage FQP9N50C + ISL9R460

EON EON / EOFF losses VIN = 100V EON = 8.7uJ EOFF = 9.5uJ EOFF

VIN = 300V EON = 32.3uJ EOFF = 23.1uJ

15

Switching Losses vs. Voltage: EON and EOFF losses

Eon and Eoff losses of the FET - FQP9N50C vs. Input Voltage
50 45 40 35 Eon and Eoff Losses [uJ] 30 25 20 15 10 5 0 0 50 100 150 200 250 300 350 Input Voltage [V] Eon @ ISL9R1560 Eoff @ ISL9R1560 Eon @ ISL9R460 Eoff @ ISL9R460

Comparison of two Stealth diodes, which are optimized for hard switching

Higher Current rating of the Diode will increase Eon, but decrease Eoff (Diode capacitance acts as a snubber). Eon is dominating!
16

FQP9N50C

Switching Losses vs. Current FQP9N50C + ISL9R460 @ VIN = 300V

I = 2A, EON = 16.7uJ

I = 4A, EON = 33.4uJ

I =6A, EON = 54.8uJ

I = 2A, EOFF = 9.7uJ

I = 4A, EOFF = 24.1uJ

I =6A, EOFF = 43.1uJ

(nearly) Linear relation between current and losses.

17

EON = f (Ice) and EOFF = f (Ice) for different diode technologies and ratings

Eon and Eoff losses of the FET - FQP9N50C vs. Current

200 180

Eon and Eoff Losses [uJ]

160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7

Eon @FCP11N60F Eon @ FQPF5N50CF Eon @ RURD660 Eon @ RHRP860 Eon @ ISL9R460 Eoff @ ISL9R460

FQP9N50C

Current [A]

Technologies as well as rating will have a big impact on the Eon losses. Fast recovery FETs will lead to significant higher Eon losses compared to single diode technologies. => Sometimes the reason for external fast recovery diodes. 18

Variation of IRRM with load current for different diode technologies

Irr, Reverse Recovery Peak Current of the Diode vs. Current

14

R e v e rs e R e c o v e ry C u rre n t [A ]

12

10

Irr @ FCP11N60F Irr @ FQPF5N50CF Irr @ RURD660 Irr @ RHRP860 Irr @ ISL9R460
FQP9N50C

0 0 1 2 3 4 5 6 7

Current [A]

Irr values are a good indicator for a loss comparison of diodes. Only Irrs measured at the same dI/dt are comparable!
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EON Losses at Hard Switching with different Diode Technology @ VIN = 300V @ I = 4A

MUR1560; EON = 77.7uJ

RURD660; EON = 60.1uJ

RHRP860; EON = 37.9uJ

ISL9R1560; EON = 42.9uJ

ISL9R860; EON = 33.1uJ

ISL9R460; EON = 32.3uJ

20

Variation of the EON Losses with input voltage for different diode technologies and ratings
Eon losses of the FET - FQP9N50C vs. Input Voltage
90 80 70

Eon Losses [uJ]

60 50 40 30 20 10 0 0 50 100 150 200 250 300

Eon @ MUR1560 Eon @ RURP860 Eon @ RURD660 Eon @ FFPF10UP60 Eon @ ISL9R1560 Eon @ RHRP860 Eon @ ISL9R860 Eon @ ISL9R460 Eon @ SIC 6A

350

Input Voltage [V]

Especially in hard switching applications the diode technology will have a significant impact on the Eon losses of the switch.
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FQP9N50C

Variation of IRRM with input voltage for different diode technologies

Irr, Reverse Recovery Peak Current of the Diode vs. Input Voltage
7

Reverse Recovery Current Irr [A]

Irr @ MUR1560 Irr @ RURD660 Irr @ FFPF10UP60 Irr @ ISL9R1560 Irr @ RHRP860 Irr @ ISL9R860 Irr @ ISL9R460 Irr @ SIC 6A

0 0 50 100 150 200 250 300 350

Input Voltage [V]

The Irr value is a good parameter to estimate the switching losses of different technologies. Only Irrs measured at the same dI/dt are comparable!
22

FQP9N50C

Effect of temperature on reverse recovery

dI/dt = 200A/ms, Vdd = 400V, If = 8A, Tj = 25C and Tj = 125 C Two industry standard diodes

Results for Tj = 25C Small difference

Results for Tj = 125C Big difference

The difference between low and high temperature reverse recovery behavior is not the same for all technologies. Be careful if you compare only at low temperatures.
23

Switching Losses @ increasing switching speed Switching off:

16.7uJ EOFF = 22.8uJ Drawback: ringing due to parasitic Ind. & Caps
All measurements: FDD6N50 + ISL9R460, U = 300V, I = 4A

Same FET and Diode, reducing Rg:

Recommended Rg Good switching performance, no ringing

Low Rg Bad switching performance, ringing, but lower EOFF

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Switching Losses @ increasing switching speed - Same MOSFET, different Rg Diode = ISL9R460, U = 300V, I = 4A

FDD6N50, Rg = 10 Ohm EON = 8 uJ dI/dt = 1400A/us IRRM = 6.2A

25

Right : FDD6N50, Rg = 3 Ohm EON = 4 uJ dI/dt = 1600A/us IRRM = 7.4A

Switching Losses @ increasing switching speed - Different MOSFET Technologies Diode = ISL9R460, U = 300V, I = 4A

FQP9N50C, Rg = 30 Ohm EON = 23.2 uJ dI/dt = 400 A/us IRRM = 2.6 A

FDD6N50, Rg = 30 Ohm EON = 15.3 uJ dI/dt = 640 A/us IRRM = 3.9 A

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Variation of IRRM with dI/dt for different diode technologies

Reverse Recovery Current Irr of the Diode vs. dI/dt @ V = 300V @ I = 4A
10 9 8 Reverse Recovery Current Irr [A] 7 6 5 4 3 2 1 0 0 200 400 600 800 dI/dt [A/us] 1000 1200 1400 1600

Irr @ FFP08H60S Irr @ ISL9R860 Irr @ ISL9R460

A higher dI/dt will increase the reverse recovery current, but

27

Variation of EON losses with di/dt for different diode technologies

Eon losses of the FET vs. dI/dt @ V = 300V @ dI/dt = 4A
35

30

25

Eon Losses [uJ]

20

15

Eon @ FFP08H60S Eon @ ISL9R860 Eon @ ISL9R460

10

0 0 200 400 600 800 1000 1200 1400 1600

dI/dt [A/us]

A higher dI/dt will decrease the Eon losses.

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Effect of parallel caps on switching losses @ VIN = 300V @ I = 4A Diode = ISL9R460

EON = 32 uJ

EON = 39 uJ

EON = 57 uJ

No parallel Capacitance EOFF = 27 uJ

Cpar = 470pF EOFF = 7.8 uJ

Cpar = 1nF EOFF = 5.47 uJ

Increase of the Eon losses due to the parallel Capacitance. Advantages in switching off Overall losses?
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Effect of parallel caps on switching losses

Eon and Eoff losses with a snubber Capacitance
100 90

A small capacitance can help to reduce the overall switching losses

Etot at 300V Etot at 200V Etot at 100V Eoff at 300V Eon at 300V Eoff at 200V Eon at 200V Eoff at 100V Eon at 100V

E to t / E o n / E o ff lo s s e s [u J ]

80 70 60 50 40 30 20 10 0 0 100 200 300 400 500 600 700 800 900 1000

80 pF @ 300 V

Capacitance parallel to the Diode [pF]

200 pF @ 200 V

450 pF @ 100 V

As higher the voltage, as smaller the cap to decrease the overall losses. 30

Summary
Reverse recovery in diodes in half-bridge structures causes
small losses in the diodes larger losses in the MOSFET/IGBT

IRRM and tRR increase with

temperature di/dt current (less dominant)

Larger current rated diodes of the same family

have higher IRRM resulting in higher EON (measured at the same dI/dt for comparison) have larger capacitance, resulting in lower EOFF cause higher total switching losses

Higher di/dt results in lower EON losses, but also in a higher IRRM Addition of extra capacitance
increases EON losses but decreases EOFF losses addition of extra capacitance could reduce total losses.

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