Power Conversion Chart

dBm

mW

d Bm

mW

dBm

mW

-20
-19
-18
-17
-16
-15
-14
-13
-12
-11
-10
-9
-8

0.010
0.012
0.016
0.020
0.025
0.032
0.040
0.050
0.063
0.079
0.100
0.130
0.160

-7
-6
-5
-4
-3
-2
-1
0
+1
+2
+3
+4
+5

0.200
0.250
0.316
0.398
0.501
0.630
0.794
1.00
1.25
1.58
2.00
2.51
3.16

+6
+7
+8
+9
+10
+11
+12
+13
+14
+15
+16
+17
+18

3.98
5.01
6.30
7.94
10.0
12.6
15.8
19.9
25.1
31.6
39.8
50.1
63.1

dBm

dBm

dBm

+19
+20
+21
+22
+23
+24
+25
+26
+27
+28
+29
+30
+31
+32

0.079
0.100
0.120
0.159
0.200
0.251
0.316
0.398
0.501
0.631
0.794
1.00
1.26
1.59

+33
+34
+35
+36
+37
+38
+39
+40
+41
+42
+43
+44
+45
+46

2.00
2.55
3.16
3.91
5.01
6.31
7.94
10.0
12.6
15.8
20.0
25.1
31.6
39.8

+47
+48
+49
+50
+52
+52
+53
+54
+55
+56
+57
+58
+59
+60

50.1
63.1
79.4
100.0
126.0
158.0
200.0
251.0
316.0
398.0
501.0
631.0
794.0
1000

VSWR

VSWR=Emax
Emin

= reflection coefficient.
Return loss=20log 1

=Imax
Imin
=1+
1

Multi-tone amplifier test

IPn = Intercept point of order n.

Ipn = Po + PoPi
(n1)
Po = output level of each tone.
Pi = output power of IMD product order n.
For 2-tone test:

TOI = CIM + Po
2

TOI = third order intercept.

CIM = intermod level.
For the 2 tones F1 and F2, the third order
intermodulation products occur at:

2F1 F2 and 2F2 F1

For a FET, Power added efficiency

P1dB and Pin are in watts.
P1dB Pin
ADD = VDS I D x 100%
Noise Figure (NF)
NF = 10 log T+1
290
T = noise temperature in oK

Miscellaneous
dBm = 10 x log(W x 1000)

VSWR effect on power

VS
WR

Ret.
Loss
dB

Trans.
Loss
dB

Volt
Refl.
Coefft.

Power
Refl.
%

Power
Trans.
%

1.00
1.01
1.02
1.03
1.04
1.05
1.06
1.07
1.08
1.09
1.10
1.11
1.12

0
46.1
40.1
36.6
34.2
32.3
30.7
29.4
28.3
27.3
26.4
25.7
24.9

.000
.000
.000
.001
.002
.003
.004
.005
.006
.008
.010
.012
.014

.00
.00
.01
.01
.02
.02
.03
.03
.04
.04
.05
.05
.06

.0
.0
.0
.0
.0
.1
.1
.1
.1
.2
.2
.2
.2

100.0
100.0
100.0
100.0
100.0
99.9
99.9
99.9
99.9
99.8
99.8
99.7
99.7

1.13
1.14
1.15
1.16
1.17
1.18
1.19
1.20
1.25
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
3.00
4.00
5.00
10.0
20.0

24.3
23.7
23.1
22.6
22.1
21.7
21.2
20.8
19.1
17.7
15.6
14.0
12.7
11.7
10.9
10.2
9.5
6.0
4.4
3.5
1.7
0.9

0.016
0.019
0.021
0.024
0.027
0.030
0.033
0.036
0.054
0.075
0.122
0.177
0.238
0.302
0.370
0.440
0.512
1.24
1.93
2.55
4.80
7.41

.06
.07
.07
.07
.08
.08
.09
.09
.11
.13
.17
.20
.23
.26
.29
.31
.33
.50
.60
.67
.82
.90

.4
.4
.5
.5
.6
.7
.8
.8
1.2
1.7
2.8
4.0
5.3
6.7
8.2
9.6
11.1
25.0
36.0
44.4
66.9
81.9

99.6
99.6
99.5
99.5
99.4
99.3
99.2
99.2
98.8
98.3
97.2
96.0
94.7
93.3
91.8
90.4
88.9
75.0
64.0
55.6
33.1
18.1

State-of-the-art components, subsystems, and assemblies for innovative RF, microwave, and millimeter electronic design.
Phone: 650-967-5880 Fax: 650-967-5884 www.lsengineer.com