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ID 16A 11A
3 1 2
1 3 2
Exceptional dv/dt capability Low gate charge at 100C Application oriented characterization
TO-220
TO-220FP
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Applications
Switching application
Order codes
Part number STP16NF06 STP16NF06FP Marking P16NF06 P16NF06 Package TO-220 TO-220FP Packaging Tube Tube
February 2007
Rev 8
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Contents
STP16NF06 - STP16NF06FP
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 9
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Electrical ratings
Electrical ratings
Table 1.
Symbol
Drain-source voltage (VGS = 0) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor
Ptot
(3) (4)
dv/dt EAS
Peak diode recovery voltage slope Single pulse avalanche energy Avalanche current, repetitive or notrepetitive Insulation withstand voltage (DC) Storage temperature
2. Pulse width limited by safe operating area. 3. ISD 16A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj = 25 C, ID = 8A, VDD = 30V
Table 2.
Thermal data
TO-220 TO-220FP 6 62.5 300 C/W C/W C
Rthj-case Rthj-amb TJ
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
3.33
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Electrical characteristics
STP16NF06 - STP16NF06FP
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS =0 VDS = max ratings VDS = max ratings, TC = 125C VGS = 20V VDS = VGS, ID = 250A VGS = 10V, ID = 8A 2 0.08 Min. 60 1 10 100 4 0.1 Typ. Max. Unit V A A nA V
IDSS
Table 4.
Symbol gfs (1) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15V, ID = 8A Min. Typ. 6.5 315 70 30 7 18 17 6 10 3.5 3.5 13 Max. Unit S pF pF pF ns ns ns ns nC nC nC
VDD = 30V, ID = 8A RG = 4.7 VGS = 10V (see Figure 15) VDD = 48V, ID = 16A, VGS = 10V (see Figure 16)
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Electrical characteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
ISD = 15A, Reverse recovery time di/dt = 100A/s, Reverse recovery charge VDD = 30V, Tj = 150C Reverse recovery current (see Figure 17)
1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STP16NF06 - STP16NF06FP
2.1
Figure 1.
Figure 3.
Figure 4.
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
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Figure 9.
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Test circuit
Test circuit
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit
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DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7
L3 L6 L7
F1 F
G1 H
F2
E
L2 L5
1 2 3
L4
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P
Q
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Revision history
Revision history
Table 6.
Date 09-Sep-2004 28-Jun-2005 21-Jul-2005 09-Aug-2006 20-Feb-2007
Revision history
Revision 4 5 6 7 8 Preliminary version Complete version ECOPACK label inserted New template, no content change Typo mistake on page 1 Changes
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