Professional Documents
Culture Documents
March 2009
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Features
Max rDS(on) = 13m at VGS = -10V, ID = -11A Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant
5 6
4 3 2 1
SO-8
7 8
Thermal Characteristics
RJA RJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 C/W C/W
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Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -20 -1 10 V mV/C A A
On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V , ID = -11A Drain to Source On Resistance VGS = -4.5V, ID = -9A VGS = -10V, ID = -11A TJ = 125oC VDS = -5V, ID = -11A -1 -2 15.7 10.8 17.4 15.0 34 13.0 21.8 18.8 S m -3 V mV/C
Forward Transconductance
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 1855 335 330 2470 450 500 pF pF pF
Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the users board design.
Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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60 50
-ID, DRAIN CURRENT (A)
VGS = - 10V
40 30 20 10 0
10
50
60
1.6
ID = -11A
VGS = -10V
40 30
TJ = 150oC
20 10 0 3.0
TJ = 25oC
160
10
TJ = 150oC
2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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10 8 6 4 2 0
VDD = -10V VDD = -15V
4000
Ciss
CAPACITANCE (pF)
1000
Coss
VDD = -20V
Crss
f = 1MHz VGS = 0V
10
50
100 0.1
30
20 10
TJ = 25oC
TJ = 125oC
1 -2 10
-1
10
Figure 9. Ig vs VGS
12
-ID, DRAIN CURRENT (A)
10 8 6 4 2 0 25
VGS = -10V
10
1 ms 10 ms
THIS AREA IS LIMITED BY rDS(on)
VGS = -4.5V
100 ms 1s 10 s DC
0.1
50
75
100
125
150
0.01 0.01
0.1
10
100 200
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10
VGS = -10 V
10
10
1 0.5 -4 10
10
-3
10
-2
10
-1
10
10
10
2 1
NORMALIZED THERMAL IMPEDANCE, ZJA
10
-1
10
-2
PDM
t1
10
-3
10
-4
10
-4
10
-3
10
-2
10
-1
10
10
10
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Rev. I39
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