You are on page 1of 6

FDS6675BZ P-Channel PowerTrench MOSFET

FDS6675BZ P-Channel PowerTrench MOSFET


-30V, -11A, 13m General Description
This P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

March 2009
tm

Features
Max rDS(on) = 13m at VGS = -10V, ID = -11A Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant

5 6

4 3 2 1

SO-8

7 8

MOSFET Maximum Ratings TA = 25C unless otherwise noted


Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings -30 25 -11 -55 2.5 1.2 1.0 -55 to 150 C W Units V V A

Thermal Characteristics
RJA RJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 C/W C/W

Package Marking and Ordering Information


Device Marking FDS6675BZ Device FDS6675BZ Reel Size 13 Tape Width 12mm Quantity 2500 units

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev. B2

www.fairchildsemi.com

FDS6675BZ P-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25C unless otherwise noted


Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V VGS = 25V, VDS = 0V -30 -20 -1 10 V mV/C A A

On Characteristics (Note 2)
VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V , ID = -11A Drain to Source On Resistance VGS = -4.5V, ID = -9A VGS = -10V, ID = -11A TJ = 125oC VDS = -5V, ID = -11A -1 -2 15.7 10.8 17.4 15.0 34 13.0 21.8 18.8 S m -3 V mV/C

Forward Transconductance

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 1855 335 330 2470 450 500 pF pF pF

Switching Characteristics (Note 2)


td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Charge VDS = -15V, VGS = -10V, ID = -11A VDS = -15V, VGS = -5V, ID = -11A VDD = -15V, ID = -11A VGS = -10V, RGS = 6 3.0 7.8 120 60 44 25 7.2 11.4 10 16 200 100 62 35 ns ns ns ns nC nC nC nC

Drain-Source Diode Characteristics


VSD trr Qrr Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A Reverse Recovery Time Reverse Recovery Charge IF = -11A, di/dt = 100A/s IF = -11A, di/dt = 100A/s -0.7 -1.2 42 30 V ns nC

Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the users board design.

a) 50C/W when mounted on a 1 in2 pad of 2 oz copper

b)105C/W when mounted on a .04 in2 pad of 2 oz copper

c) 125C/W when mounted on a minimun pad

Scale 1 : 1 on letter size paper 2: Pulse Test:Pulse Width <300 us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2

www.fairchildsemi.com

FDS6675BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

60 50
-ID, DRAIN CURRENT (A)

4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5


VGS = - 10V VGS = - 5V VGS = - 4V VGS = - 4.5V

VGS = - 10V

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX


VGS = - 5V VGS = - 4.5V VGS = - 4V

PULSE DURATION = 80s VGS = - 3.5V DUTY CYCLE = 0.5%MAX

40 30 20 10 0

VGS = - 3.5V VGS = - 3V

1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V)

10

20 30 40 -ID, DRAIN CURRENT(A)

50

60

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage


50
ID = -11A PULSE DURATION = 80s

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

1.6
ID = -11A

1.4 1.2 1.0 0.8 0.6 -80

rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m)

VGS = -10V

40 30

DUTY CYCLE = 0.5%MAX

TJ = 150oC

20 10 0 3.0

TJ = 25oC

-40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC)

160

4.5 6.0 7.5 9.0 -VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 3. Normalized On Resistance vs Junction Temperature


60 -ID, DRAIN CURRENT (A) 50 40 30 20 10 0 2.0
TJ = 25oC TJ = -55oC

Figure 4. On-Resistance vs Gate to Source Voltage


100
VGS = 0V

PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX

-IS, REVERSE DRAIN CURRENT (A)

10 1 0.1 0.01 1E-3 0.0


TJ = 150oC TJ = 25oC TJ = -55oC

TJ = 150oC

2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current


3

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2

www.fairchildsemi.com

FDS6675BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


-VGS, GATE TO SOURCE VOLTAGE(V)

10 8 6 4 2 0
VDD = -10V VDD = -15V

4000
Ciss

CAPACITANCE (pF)

1000

Coss

VDD = -20V

Crss
f = 1MHz VGS = 0V

10

20 30 40 Qg, GATE CHARGE(nC)

50

100 0.1

1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V)

30

Figure 7. Gate Charge Characteristics


1000 100 10
-Ig(uA)
TJ = 150oC

Figure 8. Capacitance vs Drain to Source Voltage


-IAS, AVALANCHE CURRENT(A)

20 10
TJ = 25oC

1 0.1 0.01 1E-3 1E-4 0 5 10 15 20 -VGS(V) 25 30 35


TJ = 25oC

TJ = 125oC

1 -2 10

10 10 10 tAV, TIME IN AVALANCHE(ms)

-1

10

Figure 9. Ig vs VGS

Figure 10. Unclamped Inductive Switching Capability


100
100 us
ID, DRAIN CURRENT (A)

12
-ID, DRAIN CURRENT (A)

10 8 6 4 2 0 25
VGS = -10V

10
1 ms 10 ms
THIS AREA IS LIMITED BY rDS(on)

VGS = -4.5V

100 ms 1s 10 s DC

0.1

SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 C


o

50

75

100

125

150

0.01 0.01

0.1

10

100 200

TA, AMBIENT TEMPERATURE(oC)

VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Maximum Continuous Drain Current vs Ambient Temperature

Figure 12. Forward Bias Safe Operating Area

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2

www.fairchildsemi.com

FDS6675BZ P-Channel PowerTrench MOSFET

Typical Characteristics TJ = 25C unless otherwise noted


10
P(PK), PEAK TRANSIENT POWER (W)
4

10

VGS = -10 V

10

10

SINGLE PULSE RJA = 125 oC/W TA = 25 oC

1 0.5 -4 10

10

-3

10

-2

10

-1

10

10

10

t, PULSE WIDTH (sec)

Figure 13. Single Pulse Maximum Power Dissipation

2 1
NORMALIZED THERMAL IMPEDANCE, ZJA

DUTY CYCLE-DESCENDING ORDER

10

-1

10

-2

D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE

PDM

t1

10

-3

RJA = 125 C/W

t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA

10

-4

10

-4

10

-3

10

-2

10

-1

10

10

10

t, RECTANGULAR PULSE DURATION (sec)

Figure 14. Junction-to-Ambient Transient Thermal Response Curve

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2

www.fairchildsemi.com

FDS6675BZ P-Channel PowerTrench MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH *

Fairchild Fairchild Semiconductor FACT Quiet Series FACT FAST FastvCore FlashWriter * FPS F-PFS

tm

FRFET Global Power ResourceSM Green FPS Green FPS e-Series GTO IntelliMAX ISOPLANAR MegaBuck MICROCOUPLER MicroFET MicroPak MillerDrive MotionMax Motion-SPM OPTOLOGIC OPTOPLANAR

tm

Programmable Active Droop QFET QS Quiet Series RapidConfigure Saving our world, 1mW /W /kW at a time SmartMax SMART START SPM STEALTH SuperFET SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS SyncFET The Power Franchise

tm

TinyBoost TinyBuck TinyLogic TINYOPTO TinyPower TinyPWM TinyWire TriFault Detect TRUECURRENT* SerDes

PDP SPM Power-SPM PowerTrench PowerXS

UHC Ultra FRFET UniFET VCX VisualMax XS

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I39

2009 Fairchild Semiconductor Corporation FDS6675BZ Rev.B2

www.fairchildsemi.com

You might also like