ASAHI GLASS SW-GLASS WAFERS FOR MEMS

HIGHLIGHTS
● Anodic bonding is a very popular tool for MEMs (Micro Electronic Mechanical Systems)
devices.

● Many of MEMs devices use glass covers for protecting silicon structure in advance the
dicing process.
● The typical condition of the anodic bonding process is 400 to 600 C and 400-1000V.
● Borosilicate glass such as Pyrex is very popular as the bonding glass in this process, but the coefficient
thermal expansion (CTE) curve of borosilicate glass is not equal to that of silicon.
● The unmatched CTE causes compression or tension in between silicon and borosilicate glass.

● The thermal expansion of SW-series glass was carefully designed to match the CTE of
the MEMs silicon substrate.
● Over wide range of temperature thereby minimizing stress or compression loads.
● SW-YY glass can be bonded in lower temperature or voltage condition by adding Lithium with smaller
molecular diameter than Sodium as alkali component in glass.
● SW-YY glass was designed to minimize the compression or tension on glass wafer of MEMs
devices
● The bonding condition of SW-YY glass is 50C-100C lower than conventional borosilicate glass,
SW-3 and SW-Y.

ELECTRONIC MATERIALS Page 30

ASAHI GLASS SW-GLASS WAFERS FOR MEMS
PROPERTIES
UNITS SW-3 SW-Y SW-YY PYREX NOTES
Thermal properties
－７
Expansion Coefficient ×10 /C 36 33 33 33 average (30-300C)
Strain Point C 615 630 590 510
Annealing Point C 660 675 640 560
Softening Point C 890 895 850 820
Thermal conductivity W/m.K 1.2 1.1 1.1 1.1 by LASER flash method

Mechanical properties 0.1

Density 2.54 2.52 2.46 2.23
Young Modulus GPa 80 78 82 64
Shear Modulus GPa 34 33 34 27
Poisson’s Ratio 0.19 0.18 0.2 0.20
Viker’s Hardness GPa 6.1 6.1 5.8 6.0 Anodic
Flexural strength Mpa 97.0 97.0 97.0 95.0 Bonding
Optical properties Wafers:
Refractive Index 1.520 1.519 1.518 1.474 nd(589.3nm)

Electrical properties
● Up to 6” Dia.
Ohm cm 10.6 10.7 10.3 11.9 100C
Log Volume Resistivity Ohm cm 8.3 8.3 7.8 9.4 200C
Dielectric Constant 6.1 6 6.3 4.6 R.T. , 1MHz
Loss Tangent 0.01 0.01 0.01 0.01 R.T. , 1MHz

Chemical properties
Acid Durability mg/cm2 0.30 0.16 0.09 0.01 1/100N HNO3 96C×20h Dipping
Alkali Durability mg/cm2 0.09 0.17 0.16 0.14 5% NaOH 80%× 1h Dipping
Water Durability mg/cm2 0.05 0.07 0.05 0.04 Deionized water 95C×40h Dipping

Others
Alkali - Component Na2O Na2O Li2O
Characters Standard TypeSimilar CTE Lower temp

w/ silicon bonding
Remarks: C - - - Degree Centigrade, Ohm -- The unit of resistance

ELECTRONIC MATERIALS Page 31

ASAHI GLASS SW-GLASS WAFERS FOR MEMS
PROPERTIES
Thermal Expansion
Accumulated expansion curve

1800
1600
1400
Expansion (ppm)

1200
SW-3
1000 SW-Y
800 SW-YY
PYREX
600
400
200
0
30 70 110 150 190 230 270 310 350 390 430
Temperature（C）

ELECTRONIC MATERIALS Page 32

ASAHI GLASS SW-GLASS WAFERS FOR MEMS
PROPERTIES
Thermal Expansion

Coefficient Thermal Expansion

SW-YY has
4.5 Excellent CTE
Match with Si

4
Expansion（X10-6/C）

SW-3
3.5 SW-Y
SW-YY
3 PYREX
Silicon
2.5

2
30 70 110 150 190 230 270 310 350 390 430
Temperature（℃）

ELECTRONIC MATERIALS Page 33

ASAHI GLASS SW-GLASS WAFERS FOR MEMS
PROPERTIES
Processing Characteristics

SW-YY bonds with silicon in lower temperature and low voltage.

(+)

Heater
Si Silicon: 4" X 0.5mm thickness
Glass Glass : 4" X 2.5mm thickness

Heater & Electrode (-) Under vacuum condition

SW-Y, PYREX

Si bonds with Glass

Si bonds with Glass

Not bonded
Not bonded

ELECTRONIC MATERIALS Page 34

ASAHI GLASS SW-GLASS WAFERS FOR MEMS
PROPERTIES
Machining for both SW-YY and borosilicate glass wafer
Wafer dimensions (Standard dimension):
● Diameter : 3” to 6” +/- 0.0197” (+/- 0.5mm)
● Available size: 3”, 4”, 5” and 6”
● Thickness : 0.0118” to 0.197” +/-0.00197” (0.3 to 5.0mm +/- 0.05mm)
● Flatness (Warp) : < 10 µm (4”), < 30µm(6")
● Roughness : R a < 10 nm
● TTV : Total Thickness Variation < 10µm
● Surface finish : Both sides polished
● Orientation flat : SEMI standard flat upon request

Holes and Cavities:

● We apply the most appropriate fabrication method to the required dimensions and patterns.

Patterning & Metallizing

● Through holes : Rectangular or custom patterning
● Cavity : Rectangular or custom patterning
● Combination : We can manufacture special patterning with holes and cavities.
● Metallizing : Pt, Cr, Au, Ni or Ti spattering/deposition upon request

ELECTRONIC MATERIALS Page 35