National Research Council Workshop on Developments in Optoelectronics: Opportunities for Solid State Lighting

National Security Implications

March 26, 2001

A. D. Romig, Vice President for Science & Technology and Partnerships & Chief Technology Officer Sandia National Laboratories Phone: 505-844-8358 E-mail: Adromig@sandia.gov Sandia is a Multiprogram Laboratory FAX: 505-284-3166 Operated by Sandia Corporation,
a Lockheed Martin Company, for the United States Department of Energy Under Contract DE-ACO4-94AL85000.

Sandia is a National Security Laboratory

Nuclear Weapons Nonproliferation & Materials Control

Safe, Secure, Reliable Weapons Detection Surveillance

Energy & Critical Infrastructures

Emerging Threats
Anti-crime and antiterrorism technology

Energy Information

Transportation Architectural Surety

Smart Weapons

Integrated Microsystems: The Next Silicon Revolution

The next leap in function will involve more than just packing additional transistors on the chip It will involve the building of new microscopic structures along side the transistors, giving the chip the ability to:

Sense Think Act Communicate

The second silicon revolution will impact our lives in the next thirty years as profoundly as the IC has over the last thirty years.

Global security requires global energy availability

Solid State Lighting will contribute to National Security by increasing energy efficiency (decreased dependence on foreign energy sources)
1000
400 Quads

200
Projected With accelerated effort

Energy Consumption (Quads)

Energy 100 Electricity 10

130 Quads

150 Efficiency (lm/W)

25 Quads

100 Fluorescent (~25%) Halogen 0 Semiconductor

Without accelerated effort

Illumination

50

WORLD
1970 1980

1998

Projected 2010 2020

Incandescent (< 8%) 1980 1990 Year 2000 2010 2020

1990 2000 Year

1970

Potential benefits of Solid State Lighting (by year 2025) Decreasing by 10 per cent the total global consumption of electricity Freeing over 125 GW of global generating capacity at $50B in construction costs Reducing global carbon emissions by 200 Mtons/year

Solid State Lighting will drive rapid advances in wide bandgap semiconductor technology
6.0 5.5 5.0

AlN

0.2

GaN, AlGaN: UV

(eV)

4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 4.2

InGaN: blue, green, amber

GaN

0.4

InN

AlP GaP

AlAs AlSb GaAs InP GaSb InAs

0.5

1.0 2.0

InSb5.0
6.2 6.4 6.6

4.4

4.6

4.8

5.0

5.2

5.4

5.6

5.8

6.0

Lattice Constant ()

GaAs technology led to major advances in high performance military electronics Advances in IR-to-Red phosphide/arsenide optoelectronics drove a revolution in optical communications Nitrides will enable a new generation of short wavelength sources and high performance electronics

Wavelength ( m)

0.3

Energy Gap

Nitride materials advances will enable new national security applications

Chem-bio sensing and surveillance Airborne missile launch warning Multifrequency high-resolution radar imaging High bandwidth satellite communications

Compact fluorescence-based chem-bio sensors enable WMD monitoring

Chem (inorganic)
1.2

Bio (organic)
Unwashed Bacteria
E. coli (LD) E. coli (LD) B. subtilis (BHI) E. coli (BHI)

Normalized Signal

1 .8 .6 .4 .2 0 380 400 420 440

434.02 nm

LED-induced fluorescence from UO2-doped glass

360 nm Excitation
460 480 500 520

Wavelength (nm)

robugs

Compact monitoring By UV-fluorescence

Solar blind UV detectors for missile launch detection and tracking

Ground vehicle self protection Airborne missile threat warning detection and estimation UV search and track Biological agent detection Engine monitoring Combustion control

AN/AAR-47 Ultraviolet Helos Transports

AN/AAR-57 Ultraviolet Helos Transports Tactical

Todays Technology: Bulky, Fragile, and Expensive

High power electronics for low weight Synthetic Aperture Radar (SAR)
1000
15 GHz 6-in resolution 16 km range

16.7 GHz < 4 -in resolution 25 km range 16.8 GHz VSAR (0.5-mres ) monopulse Ku or Ka Band < 6-in resolution Multi-mode CCD & GMTI

100

Low weight, high resolution enabled by high power density of GaN

lbs 10 1990 STARLOS

1995 ITAG

2000 Lynx

2005 Micro-SAR

Reduced weight is crucial for UAV field applications

Lighter weight
Predator UAV I-GNAT UAV Prowler II UAV

Smaller UAV

Less vulnerable target

GaN HEMTs have 10X power density of InP. Enables: replacement of TFTs electronically scanned antennas
Radar Electronics Assembly

Antenna Assembly

Solid State Lighting will significantly impact National Security

White lighting for energy efficiency
Extend domestic resources (reduce dependence on foreign sources) Safeguard the environment for global security

UV optoelectronics
Compact fluorescence-based chem-bio sensors for WMD detection Solar-blind 240-280 nm detectors for missile launch detection and tracking

High-power, high-temperature electronics

High-efficiency, low-weight satellite communications High-power synthetic aperture radar (SAR); active decoys and jamming High temp. electronics for field applications -- aircraft, missiles, etc.